JPS60251702A - Directional coupler - Google Patents
Directional couplerInfo
- Publication number
- JPS60251702A JPS60251702A JP59108834A JP10883484A JPS60251702A JP S60251702 A JPS60251702 A JP S60251702A JP 59108834 A JP59108834 A JP 59108834A JP 10883484 A JP10883484 A JP 10883484A JP S60251702 A JPS60251702 A JP S60251702A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric substrate
- finger
- dielectric
- base
- directional coupler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
- H01P5/184—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers the guides being strip lines or microstrips
- H01P5/185—Edge coupled lines
- H01P5/186—Lange couplers
Landscapes
- Waveguides (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は方向性結合器に関し、特に誘電体基板上に構
成されマイクロ波電力を分配する為に用いる方向性結合
器に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a directional coupler, and more particularly to a directional coupler constructed on a dielectric substrate and used for distributing microwave power.
第1図は従来の方向性結合器を示す斜視図であり、図に
おいて、(1)は誘電体基板、(2)はターミナルマイ
クロストリップ線路、(3)はフィンガ(finger
)、(4)は裏面金属膜、(5)は金ワイヤである。FIG. 1 is a perspective view showing a conventional directional coupler. In the figure, (1) is a dielectric substrate, (2) is a terminal microstrip line, and (3) is a finger.
), (4) is the back metal film, and (5) is the gold wire.
ターミナルマイクロストリップ線路(2)、フィンガ(
3)、8面金属膜(4)は誘電体基板(1)に蒸着、め
、つき等により金属膜を設けることにより形成する。Terminal microstrip line (2), finger (
3) The eight-sided metal film (4) is formed by providing a metal film on the dielectric substrate (1) by vapor deposition, plating, plating, or the like.
第2図は第1図のA A’断面図である。第2図におい
て第1図と同一符号は同一部分を示し、Wはフィンガ幅
、Sはフィンガ間の間隔、hは基板厚である。方向性結
合器としての結合量はW/h 。FIG. 2 is a sectional view taken along line AA' in FIG. In FIG. 2, the same reference numerals as in FIG. 1 indicate the same parts, W is the finger width, S is the spacing between fingers, and h is the substrate thickness. The coupling amount as a directional coupler is W/h.
S/hの関数として定するので、第1図に示す従来の構
造では、ターミナルマイクロストリップ線路(3)に付
与すべき特性インピーダンスの関係などからhの値が定
められると、所望の結合量に対するW、Sの値もそれぞ
れ定められた。たとえば、結合量3dBの結合器を第1
図の構造で設計する場合h = o、6mmのアルミナ
基板を誘電体基& fi+として用いるとW = 50
pm 、 S = 50 pm程度となり、h=9.
3mmの場合、W=25μn 、5=25μm程度とな
る。Since it is determined as a function of S/h, in the conventional structure shown in FIG. The values of W and S were also determined. For example, a coupler with a coupling amount of 3 dB is
When designing with the structure shown in the figure, h = o, and when using a 6 mm alumina substrate as the dielectric base & fi+, W = 50.
pm, S=about 50 pm, and h=9.
In the case of 3 mm, W=25 μn and 5=25 μm.
以上のように、従来の構造では、誘電体基板(1)の厚
さが薄くなると、W、Sの寸法が小さくなって微細加工
を必要とし、工作精度の制約から結合量を所望の値とす
ることが困難になるという欠点があった。As described above, in the conventional structure, as the thickness of the dielectric substrate (1) becomes thinner, the dimensions of W and S become smaller, requiring microfabrication, and due to constraints on machining accuracy, the amount of coupling cannot be adjusted to the desired value. The disadvantage was that it was difficult to do so.
この発明は上記のような従来のものの欠点を除去するた
めになされたもので、この発明では、2枚の誘電体基板
を重ねて構成した基板上に方向性結合器を構成し、フィ
ンガを構成する部分の基板厚をターミナルマイクロスト
リップ線路を構成する部分の基板厚に比較して厚くする
ことによりフィンガ幅W1フィンガ間の間Hsを大きく
した。This invention was made in order to eliminate the drawbacks of the conventional ones as described above. In this invention, a directional coupler is constructed on a substrate made by stacking two dielectric substrates, and a finger is constructed. The finger width W1 and the distance Hs between the fingers were increased by increasing the substrate thickness at the portion where the terminal microstrip line is formed compared to the substrate thickness at the portion constituting the terminal microstrip line.
以下この発明の実施例を図面について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第3図はこの発明の一更流側を示す斜視図であり、第4
図は第3図に示す方向性結合器の組立方法を示す斜視図
であって、これらの図において第1図と同一符号は同一
部分を示す。但しフィンガと金ワイヤの部分は符号を省
略しである。(6)は第1の誘電体基板、(7)は第2
の誘電体基&、(81は第1の金属膜、(9)は第2の
金属膜、(10は接地用金属膜、09は第2の誘電体基
板(7)にあけられた貫通穴である。FIG. 3 is a perspective view showing the downstream side of this invention;
The figure is a perspective view showing a method of assembling the directional coupler shown in FIG. 3, and in these figures, the same reference numerals as in FIG. 1 indicate the same parts. However, the numbers for the fingers and gold wires are omitted. (6) is the first dielectric substrate, (7) is the second
dielectric base &, (81 is the first metal film, (9) is the second metal film, (10 is the grounding metal film, 09 is the through hole drilled in the second dielectric substrate (7) It is.
第5図は第3図のA A’断面をボす断面図であって、
第2図、第3図、第4図と同一符号は同−又は相当部分
を示す。FIG. 5 is a sectional view taken along the A-A' section of FIG.
The same reference numerals as in FIGS. 2, 3, and 4 indicate the same or corresponding parts.
第1の金属膜(8)と第2の金属膜(9)ははんだ付は
等によシ固定するものとし、第2の金属族(9)と接地
用金属膜叫は貫通穴α℃に金属を設けることにより電気
的に接続する。したがって、第4図、第5図から明らか
なように第1の誘電体基板(6)の下111]平面に第
1の金属膜(8ンが存在し、これに対応して第2の誘電
体基板(7)の上側平向に第2の金属膜(9)の存在す
る部分では、第1の金属膜(8)の表面が接地電位とな
り、第1の金属膜(8)と第2の金属膜(9)が存在し
ない部分すなわちフィンガの下方部分では接地用金属膜
αOの表面が接地電位となる。The first metal film (8) and the second metal film (9) shall be fixed by soldering, etc., and the second metal group (9) and the grounding metal film shall be connected to the through hole α℃. Electrical connection is made by providing metal. Therefore, as is clear from FIG. 4 and FIG. In the part where the second metal film (9) is present in the upper plane of the body substrate (7), the surface of the first metal film (8) is at ground potential, and the first metal film (8) and the second metal film (8) are connected to each other. In the part where the metal film (9) is not present, that is, in the lower part of the finger, the surface of the grounding metal film αO is at the ground potential.
すなわち、第3図、第4図、第5図に示す構造では、タ
ーミナルマイクロストリップ線路(2)を構成する部分
の基板厚は第1の誘電体基板(6)の厚さであり、フィ
ンガ(3)を構成する部分の基板厚は第1の誘電圧基板
(6)の厚さと第2の誘電体基板(7)の厚さの和とな
っている。That is, in the structures shown in FIGS. 3, 4, and 5, the substrate thickness of the portion constituting the terminal microstrip line (2) is the thickness of the first dielectric substrate (6), and the thickness of the finger ( 3) is the sum of the thickness of the first dielectric substrate (6) and the thickness of the second dielectric substrate (7).
そのために、この発明の方向性結合器では、フィンガ幅
W1フィンガ間の間隔Sの寸法を大きくすることができ
て微細加工を必要としない。Therefore, in the directional coupler of the present invention, the finger width W1 and the spacing S between the fingers can be increased, and microfabrication is not required.
なお、以上はランゲ形方向性結合器の場合について説明
したが、この発明はこれに限らず、コムライン結合器等
に用いることもできる。Note that although the case of a Lange type directional coupler has been described above, the present invention is not limited to this, and can also be applied to a combline coupler or the like.
又、貫通穴0には金属を充填してもよい。Further, the through hole 0 may be filled with metal.
以上のようにこの発明によれば、マイクロ波電力を伝送
するターミナルマイクロストリップ線路の部分に対する
接地電位は第1の誘電体基板の下面に構成され、マイク
ロストリップ線路間でマイクロ波電力を相互に結合する
相互結合部分に対する接地電位は第1の誘電体基板と第
2の誘電体基板とを重ね合せた基板の下面に構成される
ようにしたので、相互結合部分に対する微細加工の必要
がなくなった。As described above, according to the present invention, the ground potential for the portion of the terminal microstrip line that transmits microwave power is configured on the lower surface of the first dielectric substrate, and the microwave power is mutually coupled between the microstrip lines. Since the ground potential for the mutually coupled portions is formed on the lower surface of the substrate in which the first dielectric substrate and the second dielectric substrate are stacked, there is no need for microfabrication of the mutually coupled portions.
第1図は従来の方向性結合器を示す斜視図、第2図は第
1図の断面図、第3図はこの発明の一実施例を示す斜視
図、?A4図は第3図に示す方向性結合器の組立方法を
示す斜視図、第5図は第3図の断面図である。
(2)・・・ターミナルマイクロストリップ線路、(3
)・・・フィンガ、(5)・・・金ワイヤ、(6)・・
・巣1の誘導体基板、(7)・・・第2の誘電体基板、
(8)・・・第1の金属膜、(9)・・・・・・第2の
金属膜、tld・・・接地用金属膜、0P・・・貫通穴
。
尚、各図中同一符号は同−又は相当部分を示す。
代理人 大 岩 増 雄
第1図
第2図
第4図1 is a perspective view showing a conventional directional coupler, FIG. 2 is a sectional view of FIG. 1, and FIG. 3 is a perspective view showing an embodiment of the present invention. Figure A4 is a perspective view showing a method of assembling the directional coupler shown in Figure 3, and Figure 5 is a sectional view of Figure 3. (2)...terminal microstrip line, (3
)...Finger, (5)...Gold wire, (6)...
・Dielectric substrate of nest 1, (7)...second dielectric substrate,
(8)...First metal film, (9)...Second metal film, tld...Grounding metal film, 0P...Through hole. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa Figure 1 Figure 2 Figure 4
Claims (1)
を配設し、上記誘電体基板の下面を被覆する導体を接地
電位とし、上記複数本のマイクロストリップ線路間の相
互結合部分を上記誘電体基板の上面に形成して構成する
方向性結合器において、誘電体基板は、第1の誘電体基
板と第2の誘電体基板との重ね合せによシ構成され、 複数本のマイクロストリップ線路とその相互結合部分は
上記第1の誘電体基板の上面に形成され、上記第2の誘
電体基板の上面は上記第1の誘電体基板の下面に接触す
るよう重ね合され、この接触面には上記相互結合部分の
下方の接触面部分を除き導体膜が形成され、 上記第2の誘電体基板の下面は接地導体で被覆され、こ
の接地導体に対し上記導体膜を電気的に接続する手段を
備えたことを特徴とする方向性結合器。[Claims] A plurality of microstrip lines are disposed 1 m above a dielectric substrate, a conductor covering the lower surface of the dielectric substrate is set to a ground potential, and mutual coupling between the plurality of microstrip lines is provided. In the directional coupler configured by forming a portion on the upper surface of the dielectric substrate, the dielectric substrate is configured by overlapping a first dielectric substrate and a second dielectric substrate, and a plurality of dielectric substrates are formed. microstrip lines and their mutually coupled portions are formed on the upper surface of the first dielectric substrate, and the upper surface of the second dielectric substrate is overlapped so as to contact the lower surface of the first dielectric substrate, A conductor film is formed on this contact surface except for the contact surface portion below the mutually coupled portion, and the lower surface of the second dielectric substrate is covered with a ground conductor, and the conductor film is electrically connected to the ground conductor. A directional coupler characterized by comprising means for connecting to.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59108834A JPS60251702A (en) | 1984-05-29 | 1984-05-29 | Directional coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59108834A JPS60251702A (en) | 1984-05-29 | 1984-05-29 | Directional coupler |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60251702A true JPS60251702A (en) | 1985-12-12 |
Family
ID=14494731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59108834A Pending JPS60251702A (en) | 1984-05-29 | 1984-05-29 | Directional coupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60251702A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030091522A (en) * | 2002-05-28 | 2003-12-03 | 주식회사에스지테크놀러지 | A microwave directional coupler |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53116757A (en) * | 1977-03-22 | 1978-10-12 | Toshiba Corp | Strip line coupling circuit |
| JPS5873138A (en) * | 1981-10-27 | 1983-05-02 | Toshiba Corp | Microwave amplifier |
| JPS5930303A (en) * | 1982-08-12 | 1984-02-17 | Mitsubishi Electric Corp | Matching circuit element of high frequency hybrid integrated circuit |
-
1984
- 1984-05-29 JP JP59108834A patent/JPS60251702A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53116757A (en) * | 1977-03-22 | 1978-10-12 | Toshiba Corp | Strip line coupling circuit |
| JPS5873138A (en) * | 1981-10-27 | 1983-05-02 | Toshiba Corp | Microwave amplifier |
| JPS5930303A (en) * | 1982-08-12 | 1984-02-17 | Mitsubishi Electric Corp | Matching circuit element of high frequency hybrid integrated circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030091522A (en) * | 2002-05-28 | 2003-12-03 | 주식회사에스지테크놀러지 | A microwave directional coupler |
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