JPS60257455A - Light receiving member for electrophotography - Google Patents

Abstract

PURPOSE:To obtain a light receiving member suitable for imaging using interfering monochromatic light, easy in manufacture management by forming the image receiving member composed of a substrate provided with a large number of protuberances on the surface, and a light receiving layer having in at least one layer region a photosensitive layer made of an amorphous material contg. silicon and carbon. CONSTITUTION:The light receiving member 1000 is constituted by laminating on the substrate 1001 subjected to surface cutting, the light receiving layer 1002 composed of, from the substrate 1001 side, an electrostatic charge injection preventive layer 1003, the photosensitive layer 1004, and the surface layer 1005. The substrate 1001 may be electrically conductive or insulating. The layer 1003 is made of A-Si composed of H and/or halogen (X), and a conductivity-governing substance (C), such as p type impurities for giving p type conduction characteristics to Si, or n type impurities for giving p type conduction characteristics to Si. The photosensitive layer 1004 is made of A-Si(H, X), and it has both of charge generating function being allowed to generate photocarriers by irradiation of laser beam, and charge transfer function transferring charge.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc. Furthermore, 5T L < relates to a light-receiving member suitable for using coherent light such as laser light.

[Conventional technology]

As a method of recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and A well-known method is to record an image by performing processes such as transfer and fixing depending on the image. Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He--Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm).

In particular, electrophotographic light-receiving members suitable for use with semiconductor lasers have a much better consistency in the photosensitivity region than other types of light-receiving members. It has a high Vickers hardness.

In terms of being non-polluting from a social perspective, for example, JP-A-54-86
Amorphous materials containing silicon atoms (hereinafter referred to as rA-
5iJ) is attracting attention.

Hyaku'1 et al., when the photosensitive layer is an A-3i layer with a funeral layer structure, hydrogen atoms and Since it is necessary to structurally contain halogen atoms or boron atoms in addition to these in a specific amount range in a controlled manner in the layer, it is necessary to strictly control layer formation, etc. There are considerable limitations on the tolerances in the design of light receiving members.

For example, Japanese Patent Application Laid-Open No. 11-154-1 can expand the tolerance of this setup 51-1- and make it possible to effectively utilize its high light sensitivity even if it is clogged or has a low dark resistance to some extent.
As described in Japanese Patent Laid-Open No. 121743, Japanese Patent Application Laid-open No. 57-4053, and Japanese Patent Laid-Open No. 57-4172, the photoreceptive layer has a layer structure of two or more layers having different conductive properties. Forming a depletion layer inside the layer, or using JP-A-57-52178, JP-A-57-52179, and JP-A-5218.
No. 0, No. 58159, No. 58160, No. 58161
As described in each of the publications of No. 1, the photoreceptive layer may have a multilayer structure in which a barrier layer is provided between the support and the photosensitive layer and/or on the upper surface of the photosensitive layer. Therefore, a light-receiving member with apparently increased dark resistance has been proposed.

Through such proposals, A-3t-based photoreceptive materials have made dramatic progress in terms of commercialization design tolerances, and in terms of ease of manufacturing control and productivity. , the speed of development toward commercialization is accelerating.

When performing laser recording using a light-receiving member with such a multilayered light-receiving layer, since the thickness of each layer is oh,
Since the laser beam is coherent, neutral color light, the free surface of the light-receiving layer on the laser-irradiated side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, this free surface and layer There is a possibility that interference may occur between the reflected lights that are reflected from the two interfaces (hereinafter referred to as the "interface").

This interference phenomenon appears as a so-called interference fringe pattern in both the NF and NF images that are formed, and is a cause of image defects, especially when forming halftone images with high gradation. teeth,
The image becomes noticeably unsightly. Furthermore, as the wavelength of the semiconductor laser light used becomes longer, the absorption of the laser light in the photosensitive layer decreases, so the above-mentioned interference phenomenon becomes more pronounced.

This point will be explained with reference to the drawings.

FIG. 1 shows light I incident on a layer constituting the light-receiving layer of a light-receiving member. Reflected light R1 reflected at the two-part interface 102
, shows reflected light R2 reflected at the lower interface 101.

The uniform thickness of the layer is d, the refractive index is n, and the wavelength of light is 9 and 1. If the layer thickness of a certain layer is uneven in one or more layers (n)+XXl, the reflected lights R1 and R2 become 2
nd-m input (ml is an integer, reflected light strengthens each other) and 2nd
= (ml-') (m is an integer, reflected light weakens each other) Depending on which of the following conditions is met, the amount of absorbed light and the amount of transmitted light of a certain layer change.

In a light-receiving member having a multilayer structure, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect due to each interference occurs. Therefore, interference fringes corresponding to the interference fringes appear in the visible image transferred and fixed on the transfer member, causing a defective image.

A method to overcome this inconvenience is to diamond-cut the surface of the support and provide unevenness of ±500 to ±10000 to form a light-scattering surface (for example,
162975 t″ff Publication The surface of the aluminum support is treated with black alumite, or carbon or carbon is added to the resin.
A method of providing a light absorption layer by dispersing colored pigments or dyes (for example, Japanese Patent Application Laid-Open No. 57-165845), applying a satin-like alumite treatment to the surface of an aluminum support, or sandblasting to create fine grain-like irregularities. By setting up
1□ Method of providing a light scattering anti-fouling layer 1 on the surface of the support (
For example, Japanese Unexamined Patent Publication No. 57-16554) has been proposed.

However, with these conventional methods, it was not possible to completely eliminate the fringe pattern appearing on the image.

In other words, in the first method, only a large number of irregularities of a specific size are provided on the surface of the support, so although it certainly prevents the appearance of interference fringes due to the light n-branch effect, it does not cause light scattering. Since the specularly reflected light component still exists, in addition to the interference fringe pattern remaining due to the specularly reflected light, the irradiation spot is broadened due to the light scattering effect on the support surface, and the irradiation spot is actually This caused a decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment-dispersed resin layer is provided, when forming a 1" Δ-3i photosensitive layer, degassing occurs from the resin layer and the layer quality of the formed photosensitive layer is significantly deteriorated. −
The A-3t type photosensitive layer is damaged by the prism during formation of the A-3t photosensitive layer, reducing its original absorption function, and the subsequent formation of the A-3t type photosensitive layer is adversely affected due to deterioration of the surface condition. be.

The tiS3 method for irregularly roughening the surface of the support is, for example, using incident light (2), as shown in FIG. A part of the light is reflected on the surface of the light-receiving layer 302 and becomes reflected light R, and the rest enters the inside of the light-receiving layer 302 and becomes transmitted light 1. A part of the transmitted light I, on the surface of the support 302 is
Light is scattered and diffused light Kr, K2, K3...
The remaining part is specularly reflected and becomes the reflected light R2, and the part becomes the emitted light R3 and goes outside. Follow-(
, the interference fringe pattern still cannot be completely erased because the emitted light R3, which is a component that interferes with the reflected light R1, remains.

In addition, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and prevent multiple faults inside the photoreceptive layer, light will be diffused within the photoreceptor layer. Another drawback is that the resolution is low due to halation.

In particular, in a multilayered light-receiving member, the surface of the support 401 is irregularly roughened as shown in FIG. but,
Reflected light R2 on the ft51 layer 402, reflected light R on the second layer
Most of the specularly reflected light R3 on the surface of the support 401 is reflected by I, and a striped pattern is produced depending on the thickness of each layer of the light-receiving member. Therefore, in a light-receiving member having a multilayer structure, it is impossible to completely prevent interference fringes by irregularly roughening the surface of the support 401.

Furthermore, when the surface of the support is irregularly roughened by a method such as sandblasting, the degree of roughness varies greatly depending on the number of rows; The uniformity of the photoreceptor layer was poor in terms of manufacturing control.In addition, relatively large protrusions were frequently formed randomly, and such large protrusions caused local breakdown of the photoreceptive layer.

In addition, when the support surface 501 is regularly roughened, 15
As shown in FIG. 5, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The sloped surface of the unevenness of the light-receiving layer 502 becomes parallel to the sloped surface of the unevenness of the light-receiving layer 502.

Therefore, in that part, Hikaru Okawa holds 2ndl=m-in or 2ndl=(m10)-in, which becomes a bright part or a dark part, respectively. In addition, for the entire photoreceptive layer, the layer thickness d, +
, 'd2, d3, and d4, the maximum difference in the dog λ is -7-100 or more and 42, so that a bright and dark striped pattern appears.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of T1 striped patterns.

Also, when a multilayer photoreceptive layer is deposited on a support whose surface is regularly roughened, one layer 411 in FIG.
The specularly reflected light on the surface of the support explained in the photo-receiving member of
In addition to the interference with the reflected light on the surface of the light-receiving layer, there is also interference with the reflected light at the interface between each layer, so that the degree of fringe pattern development becomes more complicated than that of a single-layered light-receiving member.

[Objective of the Invention] An object of the present invention is to provide a novel light-receiving member having +1 sensitivity to light, which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the I-fringe pattern that appears during image formation and the appearance of spots during reversal development. .

Another object of the present invention is to provide a light-receiving member that allows digital image recording using electrophotography, particularly for recording halftone information, to be clearly visible, with high resolution, and with high quality. It's also something to do.

Yet another object of the present invention is high photosensitivity.

High signal-to-noise ratio characteristics and good electrical contact with the support P1
Another object of the present invention is to provide a light-receiving member that achieves the following.

Another object of the present invention is to provide a light-receiving member that has excellent durability, continuous repeatability, electrical pressure resistance, use environment characteristics, mechanical pressure resistance, and light-reception characteristics in addition to the above-mentioned excellent properties. It is also about providing.

[Summary of the invention]

The light-receiving member of the present invention includes a support having a plurality of convex portions formed on its surface, the cross-sectional shape of which is a convex shape with a main peak and a sub-peak at a predetermined 9J cutting position; a photoreceptive layer consisting of a layer made of an amorphous material containing an amorphous material in which at least a part of the layer region is photosensitive; and a surface layer made of an amorphous material containing silicon atoms and carbon atoms. It features 41- to J.

Hereinafter, the present invention will be described in detail with reference to the drawings.

@Figure 6 is an explanatory diagram for explaining the basic principle of the present invention.

In the present invention, a multilayered photoreceptive layer has one or more photosensitive layers 1- on a support (shown below) having an uneven shape smaller than the required resolution of the apparatus along the slope of the unevenness. As shown in an enlarged view in FIG. 6(A), the layer thicknesses of the S2 layer 602 are d, to d6 and iu! Since they change systematically, the interface 603 and the field The natural light causes interference in the microscopic area, producing a microscopic interference fringe pattern.

In addition, as shown in FIG. 7, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-iF rows, as shown in FIG. , Enter! 14 light I
The reflected light R1 and the emitted light R3, which are reduced to 0, have a - (interference degree decreases.

Therefore, as shown in FIG. 7(C), the pair of interfaces are
If the relationship is 1.row, r(B)J is less effective than r(A)J, even if there is interference, the difference in brightness of the interference fringe pattern will be so small that it can be ignored. As a result, the amount of light incident on the minute portions is averaged.

As shown in FIG. 6, this is true even if the thickness of the second layer 602 is macroscopically non-uniform (d7#do), so the amount of incident light becomes uniform over the entire layer area ( r in Figure 6
(D) See J) Furthermore, to describe the effect of the present invention in the case where the light-receiving layer has a multilayer structure and coherent light is transmitted from the irradiation side to the second layer, FIG. As shown, there are reflected lights R1, R2, R, , R, , R1 for the incident light I0.

Therefore, in each layer, what was explained above with reference to FIG. 7 occurs.

The interface of each layer within the "-1" minute portion acts as a kind of slit, where υI folding development occurs.

Therefore, the interference in each layer appears as a product of the interference due to the difference between the layers H and the interference due to diffraction at the layer interface.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

In addition, the "interference fringes" that occur in minute parts are 1.1□1o (because the size of the minute part is smaller than the irradiation light spot diameter) 6°.

There isn't. Moreover, even if it appears in the image, it will not actually cause any trouble because it is less than the resolution of the eye.

In the present invention, it is preferable that the uneven inclined surface has a mirror finish in order to reliably align the reflected light in one direction.

The size of the minute portion (one period of the concavo-convex shape) suitable for the present invention is as follows, where L is the spot diameter of the irradiation light.

(11, -d6> -(n: refractive index of the second layer 602)n is desirable.

In the present invention, at least any two layer interfaces are non-parallel in the microscopic layer Jl (hereinafter referred to as "'4") of the multilayer photoreceptive layer. The layer thickness of each layer is controlled within the microcolumn so that there is a relationship, but as long as this condition is satisfied, any two layer interfaces may have a positive relationship within the microcolumn.

However, the layers forming parallel layer interfaces have a uniform layer thickness over the entire area so that the difference in layer thickness at any two positions is less than or equal to the refractive index of the layer It is desirable that it be formed as follows.

11. The purpose of the present invention can be more effectively achieved in forming each layer such as a photosensitive layer, a charge injection prevention layer, and a barrier layer made of an electrically insulating material, which constitute a photoreceptive layer. In order to easily achieve this, the prism vapor phase method (PCVD method), optical CVD method, and thermal CVD method are employed because the layer thickness can be precisely controlled at an optical level.

As a method for processing the support to achieve the object of the present invention, chemical methods such as chemical etching and electroplating, physical methods such as vapor deposition and sputtering, and mechanical methods such as lathe processing can be used. However, for ease of production control, a mechanical processing method such as a lathe is preferred.

For example, when machining a support with a lathe, a cylindrical support with a 7-shaped cutting edge is fixed in a predetermined position on a cutting pressure machine such as a milling machine or a lathe, and the cylindrical support is designed in advance as desired. By regularly moving the support in the desired direction while rotating it according to the programmed program, the surface of the support can be accurately cut 1 to achieve the desired uneven shape, pitch, etc.
Formed at depth. The linear protrusions created by the unevenness formed by such a cutting method form a spiral structure centered on the central axis of the cylindrical support. The helical structure of the protrusion may be a double or triple helical structure, or a crossed helical structure.

Alternatively, in addition to the spiral structure, a slow line drawing along the central axis is introduced.1. But it's okay.

In order to enhance the effects of the present invention and to facilitate processing control, it is preferable that the convex portions within a predetermined cross section of the support of the present invention have approximately the same shape.

Further, the convex portions are preferably arranged regularly or periodically in order to enhance the effects of the present invention. Furthermore, it is preferable that the convex portion has a plurality of sub-peaks in order to enhance the uninvented effect and improve the adhesion between the light-receiving layer and the support.

In addition to each of these, in order to efficiently scatter incident light in one direction, the convex portion may be symmetrical (FIG. 9(A)) or asymmetrical (FIG. 9(B)) about the main peak. It is preferable that they be unified. However, in order to increase the degree of freedom in controlling the processing of the support, it is better to have both of them mixed together.

In the present invention, a controlled state! Each dimension of the unevenness provided on the surface of the support with a spoon is set so as to effectively achieve the object 1-1 of the present invention by satisfying the following two points.

That is, firstly, the A-3i layer constituting the photosensitive layer has a shape of the surface on which the layer is formed! Structurally sensitive to surface properties;
The layer quality changes depending on the person.

Therefore, in order to prevent the layer quality of the A-3i photosensitive layer from deteriorating, the dimensions of the irregularities provided on the surface of the support were designed. There is a need to.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

1] Examine the problems of the layer deposition described above, the problems of the electrophotographic process, and the conditions for preventing interference fringes, r = I
As a result, the pitch of the four parts on the surface of the support was 500I7. m ~0.3gm, more preferably 200
1LIII -1 pLm, optimally 500. m ~5p
It is desirable to have mC.

Also, the maximum depth of the four parts is preferably 0.11Lcn-5
am, more preferably 0.3 color m to 3 gm, optimally 0
．． It is desirable to set it to 6 pLm - 2 pLm. If the pitch and maximum depth of the four parts of the support surface are within the above range,
The inclination of the inclined surfaces of the four parts (or linear protrusions) is preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees, and most preferably 4 degrees to 10 degrees.

Further, the maximum difference in layer thickness based on the layer pressure of each layer applied to the support 4-1 is preferably 0.1 gm to 2 gm, more preferably 0.0 gm within the same pitch. .1gm-1
, 5gm, /+&ia is preferably set to 0.2gm-1 μm.

Next, specific examples of the multilayered light receiving member according to the present invention will be shown.

The light receiving member +000 shown in FIG.
Surface to achieve 1 target! 7J machining - [Reduced support 1
ooi has a light-receiving layer LOO2, and the light-receiving layer 10
02 is a layer 100 for preventing 71 people from loading from the support 1001 side.
3. photosensitive layer], 004, and a surface layer 1005.

The support 1001 may be q-electric or electrically insulating. For example, Ni
Cr, stainless steel, A1. 'Cr, Mo.

Examples include (7) metals such as Au, Nb, Ta, V, Ti, PL, and Pd, or alloys thereof.

As the electrically insulating support, polyester, polyethylene, polycarbonate 1-, cellulose, acede 1-
Films or sheets of synthetic resins such as , polypropylene, polyvinyl chloride, polylλA1 vinylidene, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. Preferably, at least one surface of these electrically insulating supports 1'1 is subjected to a q main treatment, and another layer is preferably provided on the conductive surface side.

For example, if it is a crow, NiCr is applied to its surface.

AI, Cr, Mo, Au, Ir, Nb, Ta.

V, Ti, Pt, Pd, In702. 5n07.

lr To (I n7 o3+S n02 ) %'
Conductivity can be imparted by forming a thin film of NiCr, AI, Ag, Pd, Zn, Ni, etc. in the case of a synthetic resin film such as a polyester film.

Au, Cr, Mo, Ir, Nb, Ta, V, Ti, PL
, “Vacuum deposition of 9 metal thin films, electronic beano, /k,
The conductive layer is provided on the surface by deposition, sputtering, etc., and the surface is laminated with IJ or the above-mentioned metal to make the surface conductive. The shape of the support may be any shape such as a cylinder, a belt, or a plate 9, and the shape may be changed as desired.For example, the light receiving member 1000 in FIG. Used as an image forming member for
In the case of continuous copying, it is desirable to use an endless belt or a cylindrical shape. The thickness of the support is determined as appropriate so that the desired light-receiving member is formed.
When flexibility is required for the light-receiving member, it is made as thin as possible within a range that allows it to fully function as a support. However, in such a case, from the viewpoint of manufacturing and handling of the support, mechanical strength, etc., it is preferably 10 l or more.

The charge injection prevention layer 1003 is provided for the purpose of preventing charge injection into the photosensitive layer 1004 from the support 1001 side and increasing the apparent resistance.

The charge injection prevention layer 1003 is A-3i (hereinafter referred to as rA-S i ) containing hydrogen atoms and/or halogen atoms (X).
(H, X) J ) and contains a substance (C) that controls conductivity.

Examples of the substance (C) that controls conductivity contained in the charge injection prevention layer 1003 include impurities that are commonly used in the conductor field.
For i, a p-type impurity that provides p-type conductivity and an n-type impurity that provides n-type conductivity can be cited. Specifically, p-type impurities include atoms belonging to Group Ⅰ of the 1-dimensional periodic table (Group Ⅰ atoms) such as λPoB (boron), Al (aluminum), Ga (potassium), In (indium),
Among them, B and Ga are particularly preferably used.

■ Type 1 impurities include atoms belonging to Group V of the periodic table (V atoms), such as P (phosphorus), As (arsenic LH), and Sb (
(antimony), Bi (bismuth), etc., and particularly (IT) are P, As, etc.

It is.

In the present invention, the amount of the substance (C) that controls conductivity contained in the charge injection prevention layer 1003 is determined by the charge injection prevention property to be lowered or the charge column injection prevention layer 1003 to support. In direct contact with the support body 1001-J2 (if provided, it can be appropriately selected based on the organic relationship, such as the relationship with the characteristics at the contact interface with the support body 1001). Moreover, in addition to being provided in direct contact with the charge-preventing layer, a substance that controls conduction characteristics is also taken into consideration, taking into account the characteristics of the layer region and the characteristics at the contact interface with the original layer region. is selected as appropriate.

In the present invention, the conductivity controlling material Q and 11'r contained in the first layer of the charge injection shield 11 is preferably 0.001-5XI0,1 atomic pp
m, more preferably 0.5 to lXl0+ atomiCp
P m + optimally 1~5X10 atomic p
It is desirable to set it as pm.

In the present invention, the content of the substance (C) in the first layer 1003 of the charge injection shield 11 is preferably 1,2<, 30 atoms.
c ppm or more, more preferably 50 at.

mic ppm more than 42, @ suitably l OOa to
For example, if the substance (C) to be contained is the above-mentioned p-type impurity, when the free surface of the photoreceptive layer is charged to Φ polarity, it is possible to charge the material from the support side into the photosensitive layer. It is possible to more effectively block the movement of electrons injected into
) is the above-mentioned n-type impurity, it more effectively inhibits the movement of the 11 holes injected from the support side into the photosensitive layer when the free surface of the photoreceptive layer is subjected to IJ charging treatment to the e polarity. tl
l'l, +I can be done.

The layer thickness of the heavy load f1 large protection layer 1003 is preferably 30
People~1. It is desirable that the OIL is more preferably 40 people to 8 ru, and optimally 1, - 50 people to 5 ru.

The photosensitive layer 1004 is composed of A-3t(H,X), 1
It has both a charge generation function of generating photocarriers by irradiation with 7-zer light and an electron:Xr transport function of transporting the charges.

The thickness of the photosensitive layer 1004 is preferably 1-1.
0 OLL m , more preferably 1 to 80 gno-.

The optimum range is preferably 2 to 50 gm.

The photosensitive layer 1004 may contain a substance that controls conduction characteristics with a polarity different from the polarity of the substance that controls the conduction characteristics contained in the charge column prevention layer 1003, or
Charge injection prevention layer 1
It may be contained in an amount much smaller than the actual amount contained in 003.

In such a case, the content of the substance controlling the conduction properties contained in the photosensitive layer 1004 may be determined as appropriate according to the qI depending on the polarity and content of the substance contained in the charge injection prevention layer 1003. Although it is determined, it is preferably 0.001 to 1001000 atomic ppm, more preferably 0.05 to 500 atomic ppm, and optimally 0.1 to 200 atomic ppm.

In the present invention, charge injection prevention layer 11 1003 and photosensitive layer 1
When 004 contains a substance that controls the same type of conductivity, the content in the photosensitive layer 1004 is preferably 30 atomic ppm or less.

In the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in the first layer 1003 of the charge injection shield 11 and the photosensitive layer 1004, or the sum of hydrogen atoms and halogen atoms r- (H+X ) is preferably 1 to 40 atomic%
, more preferably 5 to 30 atomic%.

\Rogen atoms (X) include F, CI, and Br.

Among them, F and CI are preferred.

In the light receiving member shown in FIG. 1O, charge injection 1! /I
Instead of the tI layer 1003, it is made of 'Fi, a gas insulating material. A so-called barrier layer may also be provided. Alternatively, even if the failure layer 11 and the charge injection prevention layer 1003 are used together, X will not be supported.

As the barrier layer forming material, A-mon203 1 SiQ7
, Si3N, 1, etc., and organic electrical insulating materials such as polycarbonate.

Photoreceptor J, l shown in FIG. 10 1. In OOO, the photosensitive layer 1004. The surface layer formed on 1゜O
5 has a free surface and is provided mainly to achieve the objects of the present invention in terms of temperature resistance, continuous repetition characteristics, electrical pressure resistance, use environment characteristics, mechanical durability, and light reception characteristics.

In the present invention, the surface layer 1005 consists of silicon atoms (S
i), a carbon atom (C), and a hydrogen atom (H
) or/and halogen element rliX, ) (hereinafter referred to as ra-(SiC1)
, y<-1).

a -('Si C,) (H,X);-X -X
Formation of surface layer 1005 consisting of yy glow emission', IE
)), (PCVD method), optical CVD method, thermal CVD method, sputtering method, electron beam method, etc.

These '9 manufacturing tips are selected and adopted as appropriate depending on factors such as manufacturing conditions, negative capital investment f of approximately 1:1, manufacturing scale, and desired characteristics of the photoconductive member to be manufactured. , carbon atoms and a halogen source J'- are introduced into the fl surface layer 1005 along with the silicon source r-, which makes it relatively easy to control the manufacturing conditions for producing a light-receiving member having desired characteristics. The glow discharge method or the sputtering method is preferably employed because of the advantage that it can be easily performed. Furthermore, in the present invention, a glow discharge method and a sputtering method are used together in the same system to form the surface layer 1005.
may be formed.

1. Forming the surface layer 1005 by a discharge method. f:a −(Si C!' ) (H,X) +
yx −x y Type ゛S Niwakawa raw material gas is mixed with the sushi gas at a predetermined mixing ratio of 1i1 according to the requirements, and the support is installed.
B. The introduced gas is turned into gas plasma by causing a glow discharge, and the layer 1 (, a - (S i C
+ ) (1-r, X) l-7χ -X y may be multiplied by j1.

In the present invention, the raw material scum 7 for forming a-(SiC+) x X y (H, H), a dregs-like substance having at least one of the halogen atoms (X) as a constituent atom, or a dregs formed from a substance that is likely to be gasified can be used.

One of Si, C, H, and Gas and, if necessary, a source gas containing H as a constituent atom or/and a raw material gas containing X as a constituent atom in a desired mixing ratio, or a well using Si as a constituent atom. fiber waste, C and υ=H
The raw material gas or/and C and
r I&, raw ore scrap to be mixed with the desired JJ, H stack, or Si composed J+
'i r raw material gas and raw material gas containing Si, C, and H as constituent atoms, or raw material gas containing one of Si, C, and X as constituent atoms. ζk is created.

In addition, C is added to the raw stone scraps whose constituent atoms are Si and H.
It is possible to use a mixture of raw wood [gases] whose constituent atoms are 2M, or to use a raw material gas whose constituent atoms are C and one scrap of original wood whose constituent atoms are Si and X.

In the present invention, F is preferable as the atom (X) contained in the surface layer 1005.

C, B r and I, with F and C crossing being particularly desirable.

In the case of non-emissions, the following gases can be effectively used to form the surface layer 1005:
This can be done by listing substances that are in a gaseous state or that can be easily gasified at normal temperature and pressure.

In the present invention, SiH, 1, 5i7H, 1,5i3H11, 5i4H whose constituent atoms are Si and H are effectively used as the raw material waste for forming the surface layer 1005.
For example, saturated hydrocarbons having 1 to 4 carbon atoms, silicon hydride residues such as silanes (S i 9 . ane ) such as silanes (S i 9 . 4 ethylene hydrocarbons, acetylene hydrocarbons having 2 to 3 carbon atoms, halogen-free, hydrogen halides, interhalogen compounds,
Examples include silicon halides, halogen-substituted silicon hydrides, and silicon hydrides. Specifically, saturated hydrocarbons and 1
7 is methane (CCH4), ethane (C2H6), propane (C3H8), n-butane (n-C, HlO),
Pentane (C5HI), ethylene hydrocarbons, etc.
Ethylene (C2H4), propylene (C-AH6), butene-1 (C4HO), butene-7 (C4Hn) in butylene (C4HII), pen-6/(C5Hx), and acetylene hydrocarbons such as acetylene (C2H) ),
Methyl acetylene (C3H, +), butyne (C4H1,
), halogen intermediates include fluorine, lJ! element, bromine,
As halogen gas of iodine, hydrogen halide, FH
, HI, HO, HBr, and interhalogen compounds include:
BrF, C sentence F, C sentence F3, CIF,, B rF5.
BrF3, IF7.

I F , I Cu , I B r , 1:1 as silicon halide. , SiF4. 5i2Fb, 5
iCi3Br, 5iC17Br, 5iCiBr-, ,
5 ICU3 I.

SiBr4, halogen-substituted silicon hydride, 5i
H7F7, SiH2CH3, SiH3C, Ω.

5iHH4Br, 5iH3Br, 5iH2Br2.

S i HFJ r 3 , as silicon hydride, Si
H.

Examples include silanes such as S i7 H+1, Sig He, 5tQH, and the like.

, In addition to Korekasa, CF0. CCM,,CBr4.

CHF:4, CH2F2, CH3F, CH3C1
.

CH, Br, CH3I, C2H5C1, etc. (7) Halogeno-substituted paraffinic hydrocarbon water damage, SF4, SF6 nitrogenated sulfur compounds, S i (CH3) 4. S i(
Alkyl silicide such as C2H5)4, SiC structure (CH3
Silane derivatives such as halogen-containing alkyl silicides such as )3.5iC12(CH, , ), 5iCu, and CH3 can also be mentioned as effective.

These surface layer 1005 forming substances are the surface layer 1 to be formed.
When forming the surface layer 1005, silicon atoms, carbon atoms, halogen atoms, and hydrogen atoms are selected and used as desired so that silicon atoms, carbon atoms, halogen atoms, and hydrogen atoms are contained in the 005 in a predetermined composition ratio.

For example, 5i can easily contain silicon atoms, carbon atoms, and hydrogen atoms f, and can form a layer with desired characteristics.
(CH3)q and a halogen atom are contained Te+7)S i HCKL3. S i H2C12,5
iCu4. Alternatively, a-(Si
A surface layer 1005 consisting of C1-) (CM+x xy H)+-'/ can be formed.

The surface layer 1005 is formed by the sputtering method.
Targeting a wafer or a wafer containing a mixture of Si and C, spuck-ring is performed in various gas atmospheres containing halogen atoms and/or hydrogen atoms r as constituent atom as necessary. You can do it by doing this.

For example, if a Si wafer is used as a target, raw material gases for introducing C, H or/and Forming a gas plasma to remove the Si
All you have to do is spack-ring the wafer.

Alternatively, by using Si and C as separate targets, or by using a mixed target of S' and C, a gas containing hydrogen atoms or /' and halogen atoms can be used as necessary. This is done by sputtering in an atmosphere. As the thick phase material 2 for introducing C, H and can be done.

In the present invention, the diluent gas used when forming the surface layer 1005 by a glow discharge method or a sputtering method is a so-called rare gas, such as He, Ne, etc.
, A r, etc. can be listed as preferred in 1.7.

The surface layer 1005 in the present invention is carefully formed with a numbering that provides the seven required properties as desired.

[jppA substance whose constituent atoms are Si, C, and H or/and to r- exhibit properties ranging from conductivity to insulating properties, and from photoconductive properties to non-photoconductive properties, so in the present invention, a that has desired properties depending on the purpose -(SiXc, ) (H, For example, if the surface layer 1005 has an electrical resistance of 1-1.
For the purpose of providing a-(SiC1) (Fl,
X)+ is made as an amorphous material with pronounced electro-xy-y stun-like behavior in the environment of use.

In addition, the direction of continuous repeated use characteristics and usage environment characteristics 1. -
As a second example, when the surface layer 1005 is provided, the degree of electrical insulation is relaxed to some extent, and the amorphous material 41 which has a certain degree of sensitivity to irradiated light is used as a-(SiC1-). ()I, X) + - is created.

X y y a (Si C+) (H) on the surface of the second layer.

When forming the surface layer 1004 consisting of x xy , a-(SiXC,) (H,X) to achieve the desired characteristics.
+ It is desirable that the temperature of the support during layer formation be strictly controlled so that X y to y can be formed as desired.

In the present invention, the formation of the surface layer 100'5 is carried out by appropriately selecting an optimum range for forming the surface layer 1005 in order to effectively achieve the desired purpose. Preferably 20-400°C, more preferably 50-35°C
0'C1 Optimally iJ: lO0~300°C is desirable. For forming the surface layer 1005, glow discharge method or Adoption of sputtering method is advantageous, but when forming the surface layer 1005 by these layer forming methods, t, the discharge power during layer formation as well as the above-mentioned support temperature, a-( Si C,) (H.

x −xy X) 1. , - is one of the important factors that influences the 41r property of y.

A that determines the characteristics by which the object of the present invention is achieved
-(Si C1) (H, is 20-750W, optimally 50-650W
It is desirable that this is the case.

1 (It Jjl + layer · gas pressure is preferably 0.'0
1~IT.

rr, more preferably about 0.1 to 0.5 Torr.

In the present invention, the support 71 for forming the surface layer 1005! However, the desired number of discharge powers (in m) (including the ranges mentioned above), but these layer creation factors are not independently determined and are determined by the desired number. Characteristic a-(SiXCI□), (H
It is desirable that the optimum value of each layer formation factor be determined based on the mutual organic relationship number so that a surface layer 10 y 05 consisting of 9x)1 is formed.

The amount of carbon atoms contained in the surface layer 1005 in the light-receiving member of the present invention is the same as the conditions for forming the surface layer 1005.
Surface layer 1 that provides desired properties to achieve the object of the present invention
005 is a highly prized factor.

The amount of carbon atoms contained in the surface layer 1005 in the present invention is determined as desired depending on the type and characteristics of the amorphous lumber I constituting the surface layer 1005.

That is, the general formula a (s i x C+ x ) y
Amorphous 'cX+, + $' denoted by (H,X)+-n
Eye, fire M'1 then J1 quality 4N'+ (hereinafter ra-3iCI J
It is written as a a. IIII, O<a<1), silicono atom and carbon atom r
An amorphous material (hereinafter referred to as ra-
It is written as (SiC0-)H+J.

b b C-C However, 0<b, c<'1), silicon atom and carbon atom r-
an amorphous material composed of hydrogen atoms and optionally hydrogen atoms (hereinafter referred to as ' a (S idC1a )
e (H,X), written as e'. However, 0kud.

It is classified as eg1).

In the present invention, the surface layer 1005 is a-3iaC, --
The amount of carbon atoms contained in the surface layer 1005 is preferably ix i O-3-90a
tomic%, l-81-80ato for more women's j quotient
%, most preferably 10-75 atomic %. 1! First, a-3i C1-
If expressed as a, a is preferably a a or o, i~0.99999, more preferably 02~0
．． 99, optimally 0.25-09.

In the present invention, one surface layer 1005 is a-(Sib"-
b) JJI, composite, surface layer 100 composed of c"-c
The carbon atom contained in 5 is preferably lXl0'
~90 atomic%, more preferably 1~90 atomic%
90 atomic%, optimally 10-80 atomic
It is desirable that it be expressed as %. For low binding containing hydrogen atoms, preferably 1 to 40 atomic%, more preferably 2-32-35 atomic%, optimally 5=3
0at.

mic%, and the light-receiving member formed in some cases where the water content is within the range of A9 can be sufficiently applied as an excellent material in practice.

Ill I-3, light a (S 1bCIB) c
If you do it with a small table of H + c, b or preferably 0.1 to 0
゜9'9999, more preferably o, i~099, optimally 0.15~0.9, C is preferably 1, 0.6
A force of ~0.99, more preferably 0.65 to 0.98, optimally 0.7 to 0.95 is desired.

The surface layer 1005 is a (S ia C1-d) e
(I-1,X) When composed of +-, the surface layer 1
The content of carbon atoms contained in 005 and 17 are,
ILF, txto-” 90atomic
%, more preferably l −90atomic
%, preferably 10 to 80 atomic %. ,・＼The content of rogen atoms is preferably 1 to 20 a to
m i (preferably expressed as %, within these ranges), the light-receiving portion 4A formed by fi can be sufficiently applied in practice in certain cases. be. The content of hydrogen atoms, which are optionally included, is preferably 1. <>119 atomic%A or less, more preferably 13 atomic%A.

That is, the first cy)a-(Si C+') (H,X)
d - d (・If expressed as d and e in l-, d is preferable. < is 0.
1 to 0.99999, more preferably 0.1 to 099,
Optimally 0.15-0.9, e preferably 0.8-0.9
0099, more preferably 0.82 to 0.99, most preferably 0.85 to 098.

In the present invention, the range of the layer thickness of the surface layer 1005 is an important factor for effectively achieving the object of the present invention.

15 for the intended purpose so as to effectively achieve the purpose of the present invention.
1:: can be determined as desired.

Me, the layer thickness of the surface layer 1005 is determined based on the relationship between the 1+1 carbon atoms r contained in the layer and the layer thicknesses of the first layer and the second layer, as required for each layer region. It is necessary to appropriately determine the degree of organic relationship depending on the characteristics of the material.

Furthermore, in addition (j), it is desirable to take into consideration economic efficiency, which takes into account productivity and mass production. The thickness of the surface layer 1005 in the present invention is preferably IgL
Preferably, the amount is 0.003 to 30 ml, preferably 0.004 to 20 mel, most preferably 0.005 to 10 g.

The surface layer 1005 can function as a protective layer for mechanical durability and as an optically antireflection layer.

The surface layer 1005 is suitable for functioning as an antireflection layer 11 when the following conditions are met.

That is, when the refractive index of the surface layer 1005 is n2, the layer thickness is d, and the wavelength of the incident light is: or an odd multiple thereof, the surface layer is suitable as a foul prevention layer. Further, when the refractive index of the photosensitive layer is set to na, the refractive index n of the surface layer satisfies n- proviso, and 11. The surface layer is most suitable as an antireflection layer when the surface layer has a layer Jbd of 1 or an odd multiple thereof. When using a-3i:H as a photosensitive layer,
Since the refractive index 1-L of a-3i:H is approximately 3.3, a material with a refraction of -1jl 1 , 82 is suitable for the surface layer. a-3i:H by adjusting the ridges of C,
It is the most suitable material for the surface layer because it can have a refractive index of such a value and also satisfies mechanical durability, interlayer adhesion, and electrical properties.

Jl, - the surface layer 1005 serves as an antireflection layer Φ
Point 6 When using the device, the layer thickness of the surface layer is 0,0
! It is more desirable to set it as i~2gm.

[Embodiments of the present invention will now be described.

Example 1 In this example, a spont-type 80 jj, rn earth-9 body laser (wavelength 780 nm) was used.1. Ta. Therefore, A-3i and E are planted in a circle with one A-shaped support (H (L) 357 mm, A'6 (R) 80
A spiral groove was created in 1-mm) using a lathe. The cross-sectional shape of iM at this time is shown in FIG. 11(B).

A charge injection prevention layer and a photosensitive layer were formed on this A-cross support J2 in the following manner using the apparatus shown in FIG.

First, the configuration of the device will be explained. 1201 Io high frequency power supply, 1202 is matching ho, knu, 1203 is expansion pump Ayohi mechanical gooster pump, 1204 is A
Sentence support rotation motor, 1205, A sentence support, 120
6 is A 9. After heating the support overnight, 1207 introduces waste 7. i, 1208 is a cathode electrode for high frequency introduction, l 2
09 is the shield plate.

1210 is a power supply for the heater, 1221~1225°124
1 to 1245 are valves, 1231 to 1235 are mass flow controllers, 1251 to 12551j, L□ regulator, 12f31 are hydrogen (H2) <, 1.26
2 to silane (SiH4) bond, 1263 to siborane (
B2H et al.) Bonn, 1264if 醇(N O)
Inbe, 1265 is Mekuno (: CI (4) Bon \.

The 7 order of 1'1 binding will be explained in l, j:. 1261-12
Close all main valves to 65's E/, open all mass flow connectors and valves, and turn on 1203's 7 Expansion i3. The inside of the deposition device was heated to 10 Torr from the pump Jinji.
The pressure was 72B・k. At the same time, the A pattern support of J-Li 1205 was heated to 250°C using heater 1206 and kept constant at 2500C. After the crystallization of the AM support of 1205 becomes constant at 250 °C, 1221~1
225.1241~12.45.1251~12!55
Close the valves, listen to the main valves of Bonpas 1261 to 1265, and replace the diffusion pump 1203 with the mechanical Norstar pump. The secondary pressure of the reculator valves 1251 to 1255 was set to 1°5 Kg/crn'. 1231 mass flow control roller 300SCCM
and set the 1241 valve and 1221 valve to II
H2 sludge was introduced into the summation device.

Next, set the mass flow controller setting of 1232 to 150 secM and SiH the 3261 scum using the same procedure as for introducing the H2 scum.

Gas was introduced into the deposition apparatus. Next: B2 of 1263
Set the flow rate of H and scum to 1233 so that SiH gas is 1600 Vol p'pm with respect to e and ii'r, and use similar operations such as introducing H and scum to B2H. , 4 people put the dregs in the lf + precision equipment.

When the internal pressure inside the deposition apparatus is 0.2 Torr, turn on the high frequency power supply switch of 1201 and turn on the J20
Adjust the matching Honks of 2-AU of C11205
A glow discharge was generated between the support and the 1208 cup I/electrode, the high frequency power was 150W, and the A-5i was made with a thickness of 5 μm.
:0 layer (becomes a P-type A-3i:0 layer containing B) is exposed to 14 stingrays 1. (Charge injection prevention layer) 5m thick A-”
After depositing Si:H (P type), close the valve 1223 without turning off the discharge to stop the inflow of B, H, .

(20 p, m l”i with high frequency power of 150 W
A-3i: 0 layer (non-doped:) was deposited (photosensitive layer). Afterwards, a high frequency power supply and a scrap hull/
Close all the 1-1 stacking devices, and 71 of the A-shaped support.
2. The sample was heated to room temperature and the support on which the photosensitive layer was formed was taken out.

After that, the 1st death of 1232 Mass Flo Conte Cola:+
Change i:' to 35 S CCM L: ] 265 (7
) CH, force, η% +, i or the wave ratio with respect to the SiH4 gas flow rate is S i H, + / CH4 = 1 / 30
By opening the valve 1225 of the mass flow controller 1235, which is set to 1235, the H4 can be introduced and the high frequency power is 150W.
0°5) tm thick a-3iC(H) with ray 1. Smooth (surface layer).

Close all high-frequency power supply and gas valves and close the deposition device.
Then, the temperature of the A1 support was lowered to room temperature, and the support on which the photoreceptive layer was formed was taken out.

In this photoreceptor area, the surface of the photosensitive layer and the surface of the support were not aligned as shown in FIGS. 11(B) and 11(C). In this case, the intermediate layer I and the layer W at the middle and both ends of the AI support
X,, is 2 μm and 1 is 2.

Below 1. The light receiving member for electrophotography is
80nm 1 conductor laser spot 2tomi 80km
Image exposure, fl image, development, and cleaning process using the apparatus shown in Figure 13! After repeating 1
Practical electronic T-printing Page 44 properties are ・1< natural.
Lid, Example 2 In the same manner as in Example 1, a photosensitive layer was formed on the support 1-, and 7 samples were prepared.

Next, 1261 hydrogen (H,) Ho/be is added to Albo 7 (A
r) Replace the gas tank with the one and replace the Nona 1 implantation trade with IT'J.
Sweeping 1 Cathode Electrode” - Table 1 (Condition No. 1O1
6.) The surface layer phase material shown in 6.) was formed on the surface up to the above-mentioned photosensitive layer, and the inside of the 111 lamination apparatus was sufficiently depressurized using a diffusion pump. After that, argon hA was added to O, O
], high frequency power introduced up to -5 Torr], ! ')
A glow discharge is caused by OW, and the surface material 4 is thinned, and then the surface material Nθ
141 of the surface layer of 101) was dried. (Sample N<)
I l) 1. ) Similarly, for the remaining six trees, Table 1, ()', I'1 No. 102-107) (711 condition, 1 (1) surface layer was piled.
7) These are No. 11 (As in Δ(B) and (C), the surface of the photosensitive layer and the surface of the support were in a non-+i row. This)
4. +,, 4↑A, 9 The layer thickness of the .V uniform layer thickness at the center and both ends of the support was XI m.

Regarding 1417 types of electrophotographic light receiving members, 11
(780nm anticonductor laser with a spont diameter of 80mm)
(, +: Perform image exposure with the device shown in Figure 13 at m (image, development, cream; 7g, 18 culm) repeated about 50,000 times (also?&, perform image 1 juice value) As shown in Table 3, I entered 11 into the screen.

Example 3 When forming the J-plane layer, 17
:r, Iit ratio was changed to change the content of silicon atoms and carbon atoms in the surface layer, but each of the light-receiving members for electric f′lJ′ real use was prepared by the same method as in Example 1. Created. Each of the electrophotographic light-receiving members heated in this manner was image-exposed using a laser in the same manner as in Example 1, and after repeating 50,000 times of IlI up to ``J'', the image it't When we carried out the evaluation, we obtained the results shown in Table 2.

Example 4 When forming the surface uTi layer, the flow rate ratio of S'iH4 gas, SiF4 gas CH4 gas was changed, and the content of silicon raw material r and carbon atoms in the surface layer was increased. 1ti: r-'' by the same method as in Example 1 except for changing .
J: Each of the light-receiving members of the device is +'1 and 1. Ta. In this way (11) each of the leaked electrophotographic light-receiving parts was image-exposed with a laser in the same manner as in Example 1, and after repeating the process up to transfer approximately 50,000 times, the image evaluation was E1. However, as shown in Table 3, 111 fruits were obtained.

(Example 5) Each light-receiving member for electrophotography was prepared using the same method as in Example 1 except for changing the layer thickness of the surface layer.
'l was completed. Each of the electrophotographic light-receiving members thus obtained was image-exposed with a laser in the same manner as in Example 1, and the process up to transfer was repeated for approximately 50,045 lJ, and then direct image evaluation was performed. The results shown in Table 4 were obtained.

Example 6 The discharge power during the preparation of the surface layer was 300 W, and the average layer J1
The difference in thickness between the center and both ends of the surface layer of the electrophotographic light-receiving member was 0.5 gm using the same method as in Example J except that 7 was changed to 2 m. In such an electrophotographic light-receiving member, in which the layer thickness difference in the minute portions was 0.1 gm, no interference fringe pattern +, T: I-1 was observed;
Also, the development and cleaning steps were repeated using the same apparatus as in Example 1, and the device was sufficient for practical use.

Example 7 The surface of a cylindrical AI support was machined using a lathe as shown in FIG. 14.

On each of these cylindrical An supports, an A-3i:H lI2 i'''J: Sanada photoreceptor shrine was produced under the same conditions as in Example 1.

This electrophotographic light-receiving member was subjected to image exposure for 11 days using the apparatus shown in FIG. 13 in the same manner as in Example 1, and then developed and transferred.

The image was obtained by In this case, no interference fringes were observed in both rolling force images, and the characteristics were h-1-min for practical use.

Example 8 A light-receiving member for electrophotography was formed using the cylindrical A-pattern support having the surface properties shown in FIGS. 15 and 16 under the conditions shown in Table 2.

For these old electrophotographic light-receiving parts, image exposure is performed using the same image exposure device as in Real 5 Real 1, followed by development, transfer, and fixing. Both off-view images were obtained on the T-paper. Such an image forming process was continuously repeated 100,000 times.

In this case, no interference fringes were observed in the total -(-) of the obtained images, and the characteristics were sufficient for practical use.Also, between the initial image and the 100,000th image, There was no difference in the number of ships, and the images were of high quality.

Example 9 2i'! A light-receiving member for electrophotography was formed on the cylindrical A-pattern J-sha body-1-1 having the surface properties shown in FIG. 16 under the conditions shown in Table 3.

These electrophotographic light-receiving members were subjected to image exposure, development, and development using the same image exposure apparatus as in Example J.
Transferred, fixed, and left a visible image on plain paper (lI).

In the image obtained in this case, interference fringes were visible, and the characteristics were only 1' for practical use.

Example 10 A person-receiving member for electrophotography was formed on a printer-like support having the surface properties shown in FIGS. 15 and 16 under the conditions shown in Table 7.

For the light-receiving member for electrophotography, use the same image exposure device as in Example 1 to expose the image to 1+, develop, transfer, and fix it to form a visible image on the paper-1-. It's fII.

In the image obtained in this case, no kingly stripes were observed, and the characteristic was 1-min for practical use.

Example 11 As shown in FIGS. 15 and 16, an electrophotographic light-receiving member was formed on a cylindrical A-shaped support 4- having a surface of 1: under the conditions shown in Table 8.

One of these electrophotographic light-receiving members was subjected to image exposure using the same image exposure method as in Example 1, and was developed, transferred, and fixed to obtain a visible image on )11m paper 1-.

In the image obtained in this case, no )-interference fringes were observed, and the characteristics were sufficient for practical use.

“Effects of the Invention” As explained in detail in Section 6 below, according to the present invention, +
Suitable for image formation using colored light, easy to manage manufacturing, and one that appears during image formation (-
Waving pattern and warping: It can simultaneously and completely eliminate the appearance of spots during development, and has excellent mechanical durability, abrasion resistance, and light-receiving properties. You can provide the original part.

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. :52 is an explanatory diagram of 1-d stripes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. Figure 5 shows + when the interface between each layer of the light-receiving member is flat.
#Stripe theory ψ1 diagram. Figure 6 shows the case where the interfaces of each layer of the light-receiving member are non-parallel.
FIG. 6 is an explanatory diagram showing that no stripes appear. FIG. 7 is an explanatory diagram of a comparison of anti-q1 light intensity when the interfaces of each layer of the light-receiving member are flat and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces between the layers are Jl=parallel. FIGS. 9(A) and 9(B) are explanatory diagrams of the surface conditions of typical supports, respectively. FIG. 10 is an explanatory diagram of the layer structure of the light receiving member. FIG. ;pr ] Figure 3 shows the image exposure apparatus used in the examples. Figures 11, 14, 15, and 16 are actual) rt
#It is an explanatory view of the surface state of the A-vertical support used in Example. 1000.1.100... Light receiving member]
002, i], ]06...... Photoreceptive layer 1001......
...A9. Support body 1003...
.........Charge injection prevention layer 100
4・・・・・・・・・・・・・・・・・・・・・・・・
Photosensitive layer 1005・・・・・・・・・・・・・・・
・・・・・・Surface layer■301・・・・・・・・・・・・
.........Light receiving member for electrophotography],
'302・・・・・・・・・・・・・・・・・・
...Semiconductor laser 1303...
・・・・・・・・・・・・fO lens 1304...
・・・・・・・・・・・・・・・・・・・・・Polygon mirror 1305・・・・・・・・・・・・・・・・・・
..... Plan view of exposure device 1306 .....
... 8 Figure flute 9 figure

Claims (10)

[Claims] (1) A support having a cross-sectional shape at a predetermined cutting position or a convex shape in which a sub-peak is superimposed on a main peak, on the surface of which a large number of convex portions are formed; a layer in which at least a part of the layer region is photosensitive;
A light-receiving member comprising: a surface layer made of an amorphous material containing silicon atoms and carbon atoms; and a light-receiving layer comprising; (2) The light-receiving member according to claim 1, wherein the layer region has photoconductivity. (3) The light-receiving member according to claim 1, wherein the light-receiving layer has a multilayer structure. (4) The light receiving member according to claim 1, wherein the convex portions are regularly arranged. (5) The light receiving member according to claim 1, wherein the convex portions are arranged periodically. (6) The light receiving member according to claim 1, wherein each of the convex portions has the same shape and shape in a linear approximation. (7) The light-receiving member according to claim 1, wherein the convex portion is characterized by a sub-peak. (8) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is symmetrical about the main peak. (9) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is asymmetrical with respect to the main peak. (10) The light-receiving member according to claim 1, wherein the m convex portions are formed by one mechanical process.