JPS60262005A - Measurement of film thickness - Google Patents
Measurement of film thicknessInfo
- Publication number
- JPS60262005A JPS60262005A JP59118818A JP11881884A JPS60262005A JP S60262005 A JPS60262005 A JP S60262005A JP 59118818 A JP59118818 A JP 59118818A JP 11881884 A JP11881884 A JP 11881884A JP S60262005 A JPS60262005 A JP S60262005A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- anode
- specimen
- thickness
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Radiation (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は１．試料表面を被覆する薄膜の膜厚を計測す
る膜厚計測方法に関する。[Detailed Description of the Invention] This invention consists of 1. The present invention relates to a film thickness measurement method for measuring the thickness of a thin film covering a sample surface.
従来、試料表面を被覆する極めて薄い皮膜の膜厚を計測
する方法としては、例えば、第１にマイクロバランス法
、第２に放射化分析法、第３にエリプソメトリ−法、第
４に多重干渉法、第５にオージェ電子法、警６にＸ線光
電子法が知られているが、前記第１，２．４の方法は取
り扱いに特別の注意が必要だったり、装置が大きくかつ
高価であったり、試料に特別の前処理を必要とするなど
の欠点を持っている。第３の方法は、広範囲の膜厚を測
定できるという利点を持っているが、光学的性質が下地
と薄膜とで似ていれば計測できないという欠点がある。Conventionally, methods for measuring the thickness of an extremely thin film covering a sample surface include, for example, the first method is the microbalance method, the second is the activation analysis method, the third is the ellipsometry method, and the fourth is the multiple interference method. The fifth method is the Auger electron method, and the sixth method is the X-ray photoelectron method. However, methods 1, 2. However, it also has drawbacks such as requiring special pretreatment of the sample. The third method has the advantage of being able to measure a wide range of film thicknesses, but has the disadvantage that it cannot be measured if the optical properties of the base and the thin film are similar.
また、第５．６の方法は、試料を超高真空中に入れなけ
れば測定できないため、試料の大きさや形に制限を受け
るとともに、装置が高価な上、測定時間も長く、このよ
うに従来の膜厚計測方法には多くの問題点があった。In addition, method 5.6 cannot be measured unless the sample is placed in an ultra-high vacuum, so it is limited by the size and shape of the sample, the equipment is expensive, and the measurement time is long. There were many problems with the film thickness measurement method.
この発明は、前述の問題点に着目してなされたもので、
薄膜の膜厚を短時間で、簡単にかつ非破壊で計測できる
膜厚計測方法を提供することを目的としている。This invention was made by focusing on the above-mentioned problems.
The purpose of the present invention is to provide a film thickness measurement method that can easily and non-destructively measure the thickness of a thin film in a short time.
このような目的は、試料の表面を被覆し該試料の光電的
仕事関数より大きい光電的仕事関数を有する薄膜の膜厚
を計測する方法であって、前記試料に試料の光電的仕事
関数以上で薄膜の光電的仕事関数未満のエネルギーを与
えて、該試料から電子を放出させるとともに、この放出
された電子の内、薄膜を通り抜けた電子のみを検出して
薄膜の膜厚を計測するようにすることにより達成するこ
とができる。Such purpose is to provide a method for measuring the thickness of a thin film that covers the surface of a sample and has a photoelectric work function larger than the photoelectric work function of the sample. Energy less than the photoelectric work function of the thin film is applied to cause electrons to be emitted from the sample, and among the emitted electrons, only those that have passed through the thin film are detected to measure the thickness of the thin film. This can be achieved by
ここで、前記薄膜は、導電体、半導体あるいは絶縁体の
いずれであってもよく、要するに、薄膜の光電的仕事関
数が試料の光電的仕事関数より一 大きければよいので
ある。前記光電的仕事関数とは、金属ではフェルミレベ
ルから真空レベルまでのエネルギー差であり、半導体の
場合には価電子帯の上部から真空レベルまでのエネルギ
ー差となる。また、試料に与えるエネルギー値は、試料
の光電的仕事関数以上でかつ薄膜の光電的仕事関数未満
であり、この結果、試料のみから電子が放出され、薄膜
から電子は放出されない。前記試料から放出された電子
は、その運動エネルギーが小さなものは薄膜中でエネル
ギーを失って薄膜中に留り、一方、大きな運動エネルギ
ーを持ったものは薄膜を通り抜ける。そして、この通り
抜ける電子は、薄膜の膜厚が厚くなるに従いその運動エ
ネルギーが多く奪われるため、その数が少なくなる。Here, the thin film may be a conductor, a semiconductor, or an insulator, as long as the photoelectric work function of the thin film is one larger than the photoelectric work function of the sample. The photoelectric work function is the energy difference from the Fermi level to the vacuum level in metals, and the energy difference from the top of the valence band to the vacuum level in semiconductors. Further, the energy value given to the sample is greater than or equal to the photoelectric work function of the sample and less than the photoelectric work function of the thin film, and as a result, electrons are emitted only from the sample and not from the thin film. Among the electrons emitted from the sample, those with small kinetic energy lose energy in the thin film and remain in the thin film, while those with large kinetic energy pass through the thin film. As the thickness of the thin film increases, more of the kinetic energy of the electrons passing through the thin film is taken away, so the number of electrons decreases.
次に、この薄膜を通り抜けた電子は捕捉され、その数が
計数されたり、あるいは電流に変換され電流値として検
出される。このような計測を行う場合の雰囲気は１種々
の単体、混合ガスであっても、また大気であっても何ら
差し支えないのである。Next, the electrons that have passed through this thin film are captured, and their number is counted or converted into a current and detected as a current value. The atmosphere for performing such measurements may be one of various single gases, a mixture of gases, or the atmosphere.
以下、この発明の一実施例を図面に基づいて説明する。Hereinafter, one embodiment of the present invention will be described based on the drawings.
）
第１図は空気カウンターを示しており、同図において、
１は下部に窓２．３が形成されたケースであって、こ
のケースｌはアースされて陰極となる。ケース ｌ内に
はリング状の陽極４が設けられ、この陽極４には例えば
３．４ ＫＶの高圧電源５が接続されている。陽極４と
ケース１との間には、例えば１００ｖの電圧が印加さ□
れた第１格子電極Ｂが設置され、この第１格４電極６と
ケース ｌの底面上に載置された試料７との間には、例
えば８ｏｖの電圧が印加された第２格子電極８が設置さ
れている。前記試料７の表面は膜厚を計測する薄膜９で
覆われている。ｌＯは光源であり、この光源１０か゛ら
の光は分光器１１にょ〜り単色化され、前記試料７およ
び薄膜９を窓２を通して照射し、その反射光は窓３から
外に出ていく□。なお、この際の単色光の強度は２個の
スリット１２により調節される。１３は陽極４に接続さ
れた増幅器であり、この増幅器１３と第１格子電極６と
の間には第１パルス発生器１４が設けられている。この
第１パルス発生器１４は陽極４に電子パルスが発生した
とき、第１格子電極Ｂに、例えば時間幅’Ｔｅ（５■Ｓ
）で３００ Ｖの矩形波パルスを送り、第１格子電極８
の電圧を、第２図（ｂ）に示すように１００ Ｖから４
００ｖに増加させる。また、前記増幅器１３と第２格子
電極８との間には第２パルス発生器１５が設けられ、こ
の第２パルス発生器１５は陽極４に電子パルスが発生し
たとき、例えば時間幅Ｔｅ’（５■Ｓ）で−１１０ｖの
矩形波パルスを第２格子電極８に供給し、第２格子電極
８の電圧を、第２図（Ｃ）に示Ｊように８０ｖから一３
０Ｖまで低下させる。前記第１、第２パルス発生器１４
．１５は発生する矩形波パルスの時間幅および波高電圧
を任意に設定できるものである。１Ｂは増幅器１３に接
続された計数手段であり、この計数手段１６は陽極４に
発生する電子パルスを計数する。) Figure 1 shows the air counter, and in the figure,
1 is a case in which a window 2.3 is formed at the bottom, and this case 1 is grounded and serves as a cathode. A ring-shaped anode 4 is provided inside the case 1, and a high voltage power source 5 of, for example, 3.4 KV is connected to this anode 4. For example, a voltage of 100 V is applied between the anode 4 and the case 1 □
A second grid electrode 8 to which a voltage of, for example, 8 ov was applied is installed between the first grid electrode B and the sample 7 placed on the bottom of the case l. is installed. The surface of the sample 7 is covered with a thin film 9 whose thickness is to be measured. 1O is a light source, and the light from this light source 10 is made monochromatic by a spectroscope 11 and irradiates the sample 7 and thin film 9 through window 2, and the reflected light goes out through window 3□. Note that the intensity of the monochromatic light at this time is adjusted by two slits 12. Reference numeral 13 denotes an amplifier connected to the anode 4, and a first pulse generator 14 is provided between the amplifier 13 and the first grid electrode 6. When an electron pulse is generated at the anode 4, the first pulse generator 14 applies a signal to the first grid electrode B with a time width 'Te (5■S), for example.
) to send a 300 V square wave pulse to the first grid electrode 8.
voltage from 100 V to 4 as shown in Figure 2(b).
Increase to 00v. Further, a second pulse generator 15 is provided between the amplifier 13 and the second grid electrode 8, and when an electron pulse is generated at the anode 4, the second pulse generator 15 generates a pulse with a time width Te'( 5■S), a rectangular wave pulse of -110V is supplied to the second grid electrode 8, and the voltage of the second grid electrode 8 is increased from 80V to -13V as shown in FIG. 2(C).
Reduce it to 0V. The first and second pulse generators 14
．． Reference numeral 15 allows the time width and peak voltage of the generated rectangular wave pulse to be arbitrarily set. 1B is a counting means connected to the amplifier 13, and this counting means 16 counts the electron pulses generated at the anode 4.
この計数手段１Ｂには一算手段１７が接続され、この演
算手段１７は例えばマイクロコンピュータからなる。そ
して、この演算手段１７は計数手段１６からの出力、例
えば１秒間当りの電子パルスのカウント数（計数率）、
をＮとすると、薄膜８の膜厚Ｔを式、
ｌｏｇ Ｎ ＝ ｌｏｇ Ｎｌ −Ｔ／ ２．３０λこ
こで、λは薄膜内の電子の平均自由行程（オングストロ
ーム）
Ｍｌは膜厚が零のときのカウント数（計、数率）
を用いて演算し、薄膜８の膜厚Ｔをめる０次に、この演
算手段１７からの出力信号は、例えば、ＣＲＴ、プリン
ク−等の表示手段、１８に送られ、この表示手段１８に
おいて前記演算結果、即ち薄膜９の、膜厚Ｔ、が表示さ
れる。A calculation means 17 is connected to this counting means 1B, and this calculation means 17 is composed of, for example, a microcomputer. The calculation means 17 receives the output from the counting means 16, for example, the number of electronic pulses counted per second (counting rate),
If N is the thickness T of the thin film 8, log N = log Nl - T/ 2.30λ, where λ is the mean free path of electrons in the thin film (angstroms), and Ml is the thickness T when the film thickness is zero. The count number (total, number rate) is used to calculate the film thickness T of the thin film 8.Then, the output signal from the calculation means 17 is sent to a display means 18 such as a CRT or a link. The display means 18 displays the calculation result, that is, the thickness T of the thin film 9.
次に、この発明の一実施例の作用について説明する。Next, the operation of one embodiment of the present invention will be explained.
まず、例えば酸化シリコンからなる薄膜３が表面に付着
された、例えばシリコンからなる試料７をケース １の
底、面上に載置する０次に、高圧電源５から陽極４に第
２図（ａ）に示すように、例えば３．４ ＫＶの高電圧
を印加する。次に、光源ｌＯからの光を分光器１１によ
って単色光にするとともにスリット１２によってその強
度を調節し、試料７に照射する。この実施例においては
、試料７がシリコン、薄膜８が酸化シリコンであるので
、試料７に事関数只上で薄膜８の光電的仕事関数未満の
エネルギーを有する紫外光を使用する。この試料７に照
射された単色光は薄膜９を突き抜けた後、試料７の表面
に光エネルギーを与えて、この試料７の表面から十ｅＶ
以下の低エネルギーをもつ光電子を放、５出させる。こ
の際、単色光の有する光エネルギーが薄膜８の光電的仕
事関数未満であるので、薄膜８からは電子は放出されな
い。次に、前記試料７から放出された電子の一部は薄膜
８を通り抜け、外部に現われる。即ち、試料７から放出
された電子は、その運動エネルギーが小さなものは薄膜
ｓ中でエネルギーを失って薄膜ｓ中に留り、一方、大き
な運動エネルギーのものは薄膜９を通り抜けるのである
。ここで、薄膜８を通り抜ける電子の数は、薄膜９の膜
厚が厚くなるに従い、電子から運動エネルギーを多く奪
うため、徐々に減少するのである。即ち、試料７に与え
られるエネルギーが一定であり、これによる放出電子数
が一定である。ば、薄膜３．）膜厚が厚、な６に９ｅｌ
ｚ’薄 （膜９を通り抜けられる電子数が減少し、膜厚
と通り抜けられる電子数との間に前述の式で示した関係
が成立するのである。ここで、試料７から放出された電
子の薄膜９中での平均自由行程は、一般に数十オングス
トローム程度＝あるので、薄膜８の膜厚が極めて薄いオ
ングストロームオーダーのものを計測することができる
０次に、試料７から放出され薄膜８を通り抜けた電子は
、第２格子電極８および第１格子電極６を通過し、陽極
４に引き寄せられる。そして、電子が陽極４近傍に到達
すると、陽極４近傍には高電圧によって強い電界＼
が発生しているので、この電界により電子が加速され気
体放電を引き起こす、この気体増幅作用により、陽極４
に印加されている電圧は第２図（ａ）に示すように、電
位が低下し、電子パルスが発生する。この陽極４に発生
した電子パルスは増幅器１３を介して第１パルス発生器
１４および第２パルス発生器１５に送られる。第１パル
ス発生器１４は電圧が３００ｖで時間幅がＴｅの矩形波
パルスを発生して第１格子電極６に送り、第１格子電極
８の電圧を１００ｖから４００ＶにＴｅ時間だけ増加さ
せる。この結果、陽極４と第１格子電極６との間の電位
差が３００ｖ低下し、これによって、気体増幅作用によ
り発生した光や陽イオンによる二次電子は放電電圧に達
することができず、連続放電が阻止される。一方、第２
パルス発生器１５は時間幅がＴｅで電圧が−１１０Ｖの
矩形波パルスを第２格￥電極８に送り、第２格子電極′
８の電圧を８０Ｖから一３０Ｖに低下させる。この結果
、前記気体増幅作用によって発生した陽イオンがこの第
２格子電極８に捕捉されて中和される。これにより、陽
イオンが薄膜８および試料７に到達してこれらに影響を
与＆るようなことはない、そして、Ｔｅ時間だけ経過す
る ２と、第１、第２格子電極８．８の電圧は元の電圧
にそれぞれ回復し、空気カウンターは再び電子を検出で
きる状態となる。前記陽極４に発生した電子パルスは同
時に増幅器１３を介して計数手段１Ｂにも送られ、この
計数手段ｔＳは前記電子パルス数、即ち試料７から放出
され薄膜８を通り抜けてきた電子数、を計数し、計数結
果、例えば計数率、を演算手段Ｉ７に出力する。演算子
段１７は前述した式に基づいて演算して膜厚をめ、その
演算結果を表示手段１８に送る。前記演算結果が表示手
段１９に入力されると、表示手段１８は薄膜３の膜厚を
表示する。First, a sample 7 made of silicon, for example, with a thin film 3 made of silicon oxide adhered to its surface, is placed on the bottom surface of the case 1.Next, a high voltage power source 5 is connected to the anode 4 as shown in Fig. 2 (a). ), a high voltage of, for example, 3.4 KV is applied. Next, the light from the light source IO is converted into monochromatic light by the spectroscope 11, its intensity is adjusted by the slit 12, and the sample 7 is irradiated with the light. In this example, since the sample 7 is silicon and the thin film 8 is silicon oxide, ultraviolet light having an energy just above the photoelectric work function of the thin film 8 is used for the sample 7. After the monochromatic light irradiated on this sample 7 penetrates the thin film 9, it imparts optical energy to the surface of the sample 7, and
Emit photoelectrons with the following low energies. At this time, since the optical energy of the monochromatic light is less than the photoelectric work function of the thin film 8, no electrons are emitted from the thin film 8. Next, some of the electrons emitted from the sample 7 pass through the thin film 8 and appear outside. That is, among the electrons emitted from the sample 7, those with low kinetic energy lose energy in the thin film s and stay there, while those with high kinetic energy pass through the thin film 9. Here, the number of electrons passing through the thin film 8 gradually decreases as the thickness of the thin film 9 increases, as more kinetic energy is taken from the electrons. That is, the energy given to the sample 7 is constant, and the number of emitted electrons due to this is constant. For example, thin film 3. ) The film thickness is thick, 6 to 9 el
z'thin (The number of electrons that can pass through the film 9 decreases, and the relationship shown in the above equation is established between the film thickness and the number of electrons that can pass through.Here, the number of electrons emitted from the sample 7 is Since the mean free path in the thin film 9 is generally on the order of several tens of angstroms, it is possible to measure thin films 8 with extremely thin film thicknesses on the order of angstroms. The electrons pass through the second grid electrode 8 and the first grid electrode 6 and are attracted to the anode 4. When the electrons reach the anode 4, a strong electric field is generated near the anode 4 due to the high voltage. Since the electric field accelerates electrons and causes gas discharge, this gas amplification effect causes the anode 4 to
As shown in FIG. 2(a), the potential of the voltage applied to the electrode decreases, and an electron pulse is generated. The electron pulse generated at the anode 4 is sent to a first pulse generator 14 and a second pulse generator 15 via an amplifier 13. The first pulse generator 14 generates a rectangular wave pulse with a voltage of 300V and a time width Te and sends it to the first grid electrode 6, increasing the voltage of the first grid electrode 8 from 100V to 400V by a Te time. As a result, the potential difference between the anode 4 and the first grid electrode 6 decreases by 300V, and as a result, secondary electrons due to light and cations generated by the gas amplification effect cannot reach the discharge voltage, resulting in continuous discharge. is prevented. On the other hand, the second
The pulse generator 15 sends a rectangular wave pulse with a time width Te and a voltage of -110V to the second grid electrode 8, and the second grid electrode'
The voltage of 8 is lowered from 80V to -30V. As a result, the cations generated by the gas amplification effect are captured by the second grid electrode 8 and neutralized. As a result, positive ions will not reach the thin film 8 and the sample 7 and affect them, and the voltage of the first and second grid electrodes 8. are restored to their original voltages, and the air counter is able to detect electrons again. The electron pulses generated at the anode 4 are simultaneously sent to the counting means 1B via the amplifier 13, and this counting means tS counts the number of electron pulses, that is, the number of electrons emitted from the sample 7 and passing through the thin film 8. Then, the counting result, for example, the counting rate, is output to the calculation means I7. The operator stage 17 calculates the film thickness by calculating based on the above-mentioned formula, and sends the calculation result to the display means 18. When the calculation result is input to the display means 19, the display means 18 displays the thickness of the thin film 3.
第３図は薄膜Ｂの膜厚を測定した結果−を示すグラフで
、あり、縦軸に計数率を対数目盛で、横軸には膜厚を平
等目盛でとっている。この測定には、試料７として格子
面（１００）のシリコンを用い、また、薄膜８は前記シ
リコン表面に厚さの興なるシリコン酸化膜を形成して構
成し、照射紫外線の波長を１９０ 、２００ 、２１０
ナノメートル゛と変化させて計測した。この測定結果を
示す線はａきが前記式における（ −１／２．３Ｑλ）
の直線部分を有しており、前記式が妥当であることを示
している。FIG. 3 is a graph showing the results of measuring the thickness of thin film B. The vertical axis shows the counting rate on a logarithmic scale, and the horizontal axis shows the film thickness on an equal scale. For this measurement, silicon with a lattice plane (100) was used as the sample 7, and the thin film 8 was formed by forming a silicon oxide film of increasing thickness on the silicon surface, and the wavelength of the irradiated ultraviolet rays was 190, 200. , 210
It was measured by changing it to nanometers. The line a representing this measurement result is (-1/2.3Qλ) in the above formula.
, which shows that the above equation is valid.
なお、前述の実施例においては、低速の電子を検出する
空気カウンタと、計数手段１６と、演算−手段１７と、
表示手段１８と、を一体化して１つの装置を構成したが
、この発明においては、例えば空気カウンタおよび計数
手段１Ｂと、演算手段１７およ゛び表示手段１８と、を
分離し、電子数の検出と演算表示とを別々の場所で行う
ようにしてもよＩ／１゜以上説明したように、この発明
によれば、薄膜の膜厚を非破壊でかつ大気中で計測する
ことができ′る。In the above embodiment, an air counter for detecting low-speed electrons, a counting means 16, an arithmetic means 17,
Although the display means 18 and the display means 18 are integrated to constitute one device, in the present invention, for example, the air counter and counting means 1B, the calculation means 17 and the display means 18 are separated, and the number of electrons is Detection and calculation display may be performed at different locations.As explained above, according to the present invention, the thickness of a thin film can be measured non-destructively in the atmosphere. Ru.
第１図はこの発明を実施するための装置の一実施例を示
す一部がブロックで示された断面図、第２図は空気カウ
ンターの電圧変化を示すグラフ、第３図は本発明を適用
して膜厚を測定した結果を示すグラフである。
ト・陽極 ７・・・試料
８・・・薄膜 １０・・・光源
１６・・・計数手段 １７・・・演算手段１８・・・表
示手段
特許出願人 理化学研究所
代理人 弁理士 多 １）敏 雄
【Fig. 1 is a cross-sectional view showing one embodiment of a device for carrying out the present invention, with a portion shown in blocks, Fig. 2 is a graph showing voltage changes of an air counter, and Fig. 3 is an application of the present invention. It is a graph showing the results of measuring film thickness. Anode 7... Sample 8... Thin film 10... Light source 16... Counting means 17... Calculating means 18... Display means Patent applicant RIKEN agent Patent attorney Ta 1) Satoshi Male [
Claims (2)
大きい光電的仕事関数以上する薄膜の膜、 厚を計測す
る方法であ・工・前記試料に試料の光電的仕事関数以上
で薄膜の光電的仕事関数未満のエネルギーを与えて、該
試料から電子を放出させるとともに、この放出された電
子の内、薄膜を通り抜けた電子のみを検出して薄膜の膜
厚を計測するようにしたことを特徴とする膜厚計測方法
。(1) A method of measuring the thickness of a thin film that covers the surface of a sample and has a photoelectric work function greater than that of the sample. Electrons are emitted from the sample by applying energy less than the photoelectric work function of A film thickness measurement method characterized by:
きのカウント数（計数率）をＮとすると、薄膜の膜厚Ｔ
を式 ％式％ ここで、λは薄膜内の電子の平均自由行程（オングスト
ローム） Ｎ１は膜厚が零のときのカウント数（計数率） を用いて演算することによりめるようにした特許請求の
範囲第１項記載の膜厚計測方法。(2) If the number of counts (counting rate) when detecting the number of electrons passing through the thin film is N, then the thickness of the thin film T
Formula % Formula % Here, λ is the mean free path of electrons in the thin film (Angstrom), and N1 is the number of counts when the film thickness is zero (counting rate). The film thickness measurement method according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59118818A JPS60262005A (en) | 1984-06-09 | 1984-06-09 | Measurement of film thickness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59118818A JPS60262005A (en) | 1984-06-09 | 1984-06-09 | Measurement of film thickness |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60262005A true JPS60262005A (en) | 1985-12-25 |
| JPH0376841B2 JPH0376841B2 (en) | 1991-12-06 |
Family
ID=14745895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59118818A Granted JPS60262005A (en) | 1984-06-09 | 1984-06-09 | Measurement of film thickness |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60262005A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61104309U (en) * | 1984-12-14 | 1986-07-02 | ||
| JPS6437688U (en) * | 1987-08-31 | 1989-03-07 | ||
| JPS6437689U (en) * | 1987-08-31 | 1989-03-07 | ||
| US4823368A (en) * | 1987-06-30 | 1989-04-18 | Rikagaku Kenkyujyo | Open counter for low energy electron detection with suppressed background noise |
| JPH03202709A (en) * | 1989-12-28 | 1991-09-04 | Showa Alum Corp | Method for measuring attached amount of rolling oil on surface of aluminum foil |
-
1984
- 1984-06-09 JP JP59118818A patent/JPS60262005A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61104309U (en) * | 1984-12-14 | 1986-07-02 | ||
| US4823368A (en) * | 1987-06-30 | 1989-04-18 | Rikagaku Kenkyujyo | Open counter for low energy electron detection with suppressed background noise |
| JPS6437688U (en) * | 1987-08-31 | 1989-03-07 | ||
| JPS6437689U (en) * | 1987-08-31 | 1989-03-07 | ||
| JPH03202709A (en) * | 1989-12-28 | 1991-09-04 | Showa Alum Corp | Method for measuring attached amount of rolling oil on surface of aluminum foil |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0376841B2 (en) | 1991-12-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2008155560A1 (en) | Method for quantitative analysis of a material | |
| Jbara et al. | Surface potential measurements of electron-irradiated insulators using backscattered and secondary electron spectra from an electrostatic toroidal spectrometer adapted for scanning electron microscope applications | |
| Graczyk et al. | Scanning electron diffraction attachment with electron energy filtering | |
| JPH0376841B2 (en) | ||
| Harris et al. | Drift velocities of electrons in sulphur hexafluoride | |
| WO1998036268A1 (en) | Charged particle analysis | |
| US7205539B1 (en) | Sample charging control in charged-particle systems | |
| JP3481031B2 (en) | Double cylindrical open counter | |
| Lifshin et al. | X-ray spectral measurement and interpretation | |
| JPH063295A (en) | Surface analyzer | |
| JPH0556459B2 (en) | ||
| Gruzza et al. | The transmission of the electron analyzers determined by elastic peak electron spectroscopy | |
| JPH0556460B2 (en) | ||
| US20110233398A1 (en) | Method for characterisation of dielectric layers by ultraviolent photo-emission spectroscopy | |
| Carriveau et al. | Charge of ions emitting spectral lines | |
| Chase et al. | Measurement of low energy secondary electron distributions using a double-pass cylindrical mirror analyzer | |
| Vernier et al. | A New Method for Measuring Energy Distribution of Photoelectrons Application to Complex Au–Cs Films | |
| Masaki Hasegawa et al. | Nondestructive depth profile analysis by changing escape depth of photoelectrons | |
| CN110988975B (en) | MV-level voltage peak value measuring probe and manufacturing method thereof | |
| JPH1123499A (en) | Electron spectroscopy | |
| JPS585671A (en) | Measuring device for voltage | |
| JP3172567B2 (en) | Method for measuring optical band gap of hydrocarbon film using low energy electron spectroscopy | |
| JPS61239554A (en) | Potential measuring device | |
| Statham | The efficiency of Si (Li) detectors at very low photon energies | |
| JPH0376842B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |