JPS6028229A - 化合物半導体装置の製造方法 - Google Patents

化合物半導体装置の製造方法

Info

Publication number
JPS6028229A
JPS6028229A JP58135875A JP13587583A JPS6028229A JP S6028229 A JPS6028229 A JP S6028229A JP 58135875 A JP58135875 A JP 58135875A JP 13587583 A JP13587583 A JP 13587583A JP S6028229 A JPS6028229 A JP S6028229A
Authority
JP
Japan
Prior art keywords
semiconductor
semiconductor device
metal film
annealing
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58135875A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6410931B2 (2
Inventor
Michi Kozuka
古塚　岐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58135875A priority Critical patent/JPS6028229A/ja
Publication of JPS6028229A publication Critical patent/JPS6028229A/ja
Publication of JPS6410931B2 publication Critical patent/JPS6410931B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58135875A 1983-07-27 1983-07-27 化合物半導体装置の製造方法 Granted JPS6028229A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58135875A JPS6028229A (ja) 1983-07-27 1983-07-27 化合物半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58135875A JPS6028229A (ja) 1983-07-27 1983-07-27 化合物半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6028229A true JPS6028229A (ja) 1985-02-13
JPS6410931B2 JPS6410931B2 (2) 1989-02-22

Family

ID=15161808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58135875A Granted JPS6028229A (ja) 1983-07-27 1983-07-27 化合物半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6028229A (2)

Also Published As

Publication number Publication date
JPS6410931B2 (2) 1989-02-22

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