JPS602859U - 半導体レ−ザ - Google Patents

半導体レ−ザ

Info

Publication number
JPS602859U
JPS602859U JP9542183U JP9542183U JPS602859U JP S602859 U JPS602859 U JP S602859U JP 9542183 U JP9542183 U JP 9542183U JP 9542183 U JP9542183 U JP 9542183U JP S602859 U JPS602859 U JP S602859U
Authority
JP
Japan
Prior art keywords
semiconductor laser
layer
substrate
utility
model registration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9542183U
Other languages
English (en)
Inventor
克己 八木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP9542183U priority Critical patent/JPS602859U/ja
Publication of JPS602859U publication Critical patent/JPS602859U/ja
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
図はＣ８Ｐ型半導体レーザを示す断面図である。 １・・・基板、３・・・電流狭搾層、４・・・発振層。

Claims (2)

    【実用新案登録請求の範囲】
  1. （１）半導体基板、該基板上に選択的に積層された電流
    狭搾層、該狭搾層上に積層されたタプルへテロ接合を有
    するレーザ光発振層を備え、上記狭搾層はＺｎ５ｅ単結
    晶からなることを特徴とする半導体レーザ。
  2. （２）実用新案登録請求の範囲第１項において、上記基
    板及び発振層はＧａＡｓ−ＧａＡｌＡｓ系材料からなる
    ことを特徴とする半導体レーザ。
JP9542183U 1983-06-20 1983-06-20 半導体レ−ザ Pending JPS602859U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9542183U JPS602859U (ja) 1983-06-20 1983-06-20 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9542183U JPS602859U (ja) 1983-06-20 1983-06-20 半導体レ−ザ

Publications (1)

Publication Number Publication Date
JPS602859U true JPS602859U (ja) 1985-01-10

Family

ID=30227880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9542183U Pending JPS602859U (ja) 1983-06-20 1983-06-20 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS602859U (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128092A (en) * 1981-01-30 1982-08-09 Sanyo Electric Co Ltd Imbedded type semiconductor laser device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128092A (en) * 1981-01-30 1982-08-09 Sanyo Electric Co Ltd Imbedded type semiconductor laser device

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