JPS6031401B2 - Interdigital bandpass filter - Google Patents
Interdigital bandpass filterInfo
- Publication number
- JPS6031401B2 JPS6031401B2 JP15245379A JP15245379A JPS6031401B2 JP S6031401 B2 JPS6031401 B2 JP S6031401B2 JP 15245379 A JP15245379 A JP 15245379A JP 15245379 A JP15245379 A JP 15245379A JP S6031401 B2 JPS6031401 B2 JP S6031401B2
- Authority
- JP
- Japan
- Prior art keywords
- resonant elements
- coupling
- resonant
- attenuation
- interdigital
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
Landscapes
- Filters And Equalizers (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Description
【発明の詳細な説明】
本発明は容量性の間接結合回路を備え、減衰城が有極形
をなすように構成したインターディジタル形帯城通過る
波器に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an interdigital band pass wave generator which is provided with a capacitive indirect coupling circuit and whose attenuation castle is polarized.
従来の誘導M形インターディジタル形帯城通過る波器の
構造の一例を第1図A,Bに示す。An example of the structure of a conventional guided M-type interdigital band wave device is shown in FIGS. 1A and 1B.
ここで、1〜6は6段構成の一列配置共振素子、7は帯
域通過る波器の外箱(シールド)、ToおよびTn+,
はそれぞれ入力および出力変成器である。このインター
ディジタル形帯城通過る波器は通過城がワグナー特性あ
るいはチェビシェフ特性をなし、減衰城は無極形である
。すなわち、伝送特性としては第2図に示すような特性
をもち、減衰城の立上がり特性がゆるやかである。Here, 1 to 6 are resonant elements arranged in a row in a 6-stage configuration, 7 is an outer box (shield) of a band-pass wave device, To and Tn+,
are the input and output transformers, respectively. In this interdigital type band castle passing wave device, the passage castle has a Wagner characteristic or a Chebyshev characteristic, and the attenuation castle has a non-polar type. That is, the transmission characteristic is as shown in FIG. 2, and the rise characteristic of the attenuation castle is gradual.
また、第1図の例では、6段(従って6次)のインター
ディジタル形帯城通過る波器を示したが、立上がり特性
(減衰城特性)をより急峻なものにしようとすると、帯
城通過る波器の次数(すなわち、段数)を増加する必要
がある。しかし、帯城通過る波器の次数が多くなると、
‘11挿入損失が増大する■大形化する細調整が困難に
なるなどの欠点があった。また、従来用いられた技術で
は、減衰城を有極化するために、容量結合部としてプロ
ーブ等を用いたものもあるが、この結合方法では微小な
容量結合値を得ることができず、その結果として減衰城
周波数帯で大きな減衰量(例えば8MB以上)を得るこ
とが困難であるなどの欠点があった。In addition, the example in Figure 1 shows a 6-stage (therefore 6th order) interdigital type wave device that passes through the band castle, but if you try to make the rise characteristic (damping castle characteristic) steeper, the band castle It is necessary to increase the order (ie, the number of stages) of the waveform passing through. However, as the number of orders of the waves passing through Obijo increases,
'11 There were disadvantages such as increased insertion loss and difficulty in making fine adjustments as the size increased. In addition, some conventional techniques use probes as capacitive coupling parts to polarize the attenuation castle, but with this coupling method it is not possible to obtain minute capacitive coupling values; As a result, there were drawbacks such as difficulty in obtaining a large amount of attenuation (for example, 8 MB or more) in the attenuation frequency band.
本発明の目的は、上述の点に鑑み、ろ波特性を向上させ
ると共に調整を容易ならしめた、小形なインターディジ
タル形帯城通過る波器を提供することになる。かかる目
的を達成するために、本発明では、設置極性が順次反転
するように配列した複数の共振素子と、前記複数の共振
素子を所定の空間領域に分割して該共振素子の主結合回
路を形成するよう電磁シールド用錘体内を仕切る位功板
とを備え、4n個(n=1,2,3…)の前記共振素子
を隔てて一対の前記共振素子間に電界疎結合をなすよう
前記仕切板に容量性間接結合孔を設けるものである。SUMMARY OF THE INVENTION In view of the above-mentioned points, it is an object of the present invention to provide a compact interdigital band pass filter which has improved filtering characteristics and facilitates adjustment. In order to achieve such an object, the present invention includes a plurality of resonant elements arranged so that the installation polarity is sequentially reversed, and a main coupling circuit of the resonant elements by dividing the plurality of resonant elements into predetermined spatial regions. and a positioning plate that partitions the inside of the electromagnetic shielding cone so as to form an electromagnetic shield, and the 4n (n=1, 2, 3...) resonant elements are separated from each other so as to form a loose electric field coupling between the pair of resonant elements. A capacitive indirect coupling hole is provided in the partition plate.
以下、実施例に基づいて本発明を詳細に説明する。Hereinafter, the present invention will be explained in detail based on Examples.
第3図AおよびBは、本発明の一実施例を示す。Figures 3A and 3B illustrate one embodiment of the invention.
ここで11〜16は第1図に示したものと同様の共振素
子、ToおよびTn十,も第1図と同様の入力変成器お
よび出力変成器、17は一列配置の共振素子11,12
,13と16,15,14との間に配設された仕切板、
18は共振素子11と16との間に後述する電界疎結合
を実現するための円形結合孔部、19は外箱(電磁シー
ルド用崖体)である。また、共振素子11と12、12
と13、13と14、14と15、15と16の間の主
結合回路の他に、共振素子11と16の間に円形結合孔
部18を介して容量性の間接結合回路を形成する。Here, 11 to 16 are resonant elements similar to those shown in FIG. 1, To and Tn are also input transformers and output transformers similar to those shown in FIG. 1, and 17 is resonant elements 11 and 12 arranged in a row.
, 13 and a partition plate arranged between 16, 15, 14,
Reference numeral 18 designates a circular coupling hole for realizing a loose electric field coupling described later between the resonant elements 11 and 16, and 19 designates an outer box (an electromagnetic shield cliff). In addition, the resonant elements 11, 12, 12
13, 13 and 14, 14 and 15, and 15 and 16, a capacitive indirect coupling circuit is formed between the resonant elements 11 and 16 via a circular coupling hole 18.
一般に、共振素子11と共振素子16の間の容量性結合
回路として結合プローブや結合板等を用いることにより
、有極化を達成し得ることがよく知られている。Generally, it is well known that polarization can be achieved by using a coupling probe, a coupling plate, or the like as a capacitive coupling circuit between the resonant element 11 and the resonant element 16.
しかし、結合プローブや結合板を用いると、高周波帯で
は結合が密になりすぎて所要の減衰量が得られない場合
がある。そこで、本実施例では円形の容量性結合孔部1
8を用いることによって、電界結合を疎にすることを可
能としている。次に、上述した容量性結合孔部18の作
用について説明する。However, when a coupling probe or a coupling plate is used, the coupling becomes too dense in high frequency bands, and the required amount of attenuation may not be obtained. Therefore, in this embodiment, the circular capacitive coupling hole 1
By using 8, it is possible to make the electric field coupling sparse. Next, the function of the capacitive coupling hole 18 described above will be explained.
円形の結合孔は磁気結合素子として作用し、容量結合素
子として作用しないことは一般に知られている。It is generally known that circular coupling holes act as magnetic coupling elements and not as capacitive coupling elements.
これに対し、第3図AおよびBに示すインターディジタ
ル形帯城通過る波器においては、共振素子11と16と
の間に第4図に示すような電界分布が生じる。このとき
、共振素子11と12の間の電界分布と、共振素子15
と16の間の電界分布の量はほぼ等しくなる。そして、
第4図示の共振素子11と共振素子16との間に、Ec
kなる漏れ電界ベクトルの方向が一致する。従って、共
振素子11と16の間はもれ電界Eckで結合され、結
果的に容量性結合(疎電界結合)となる。隣接する共振
素子間の結合態様は容量性結合となっているので、その
位相差は900である。On the other hand, in the interdigital type wave transmitter shown in FIGS. 3A and 3B, an electric field distribution as shown in FIG. 4 occurs between the resonant elements 11 and 16. At this time, the electric field distribution between the resonant elements 11 and 12 and the resonant element 15
The amount of electric field distribution between and 16 will be approximately equal. and,
Between the resonant element 11 and the resonant element 16 shown in FIG.
The directions of the leakage electric field vectors k match. Therefore, the resonance elements 11 and 16 are coupled by the leakage electric field Eck, resulting in capacitive coupling (loose electric field coupling). Since the coupling mode between adjacent resonant elements is capacitive coupling, the phase difference is 900 degrees.
よって、主結合回路についてみれば、共振素子1 1と
共振素子16との間に4個の共振素子12,13,14
,15が介在するので、その間の位相差は900×5=
900×4十900=900となる。Therefore, if we look at the main coupling circuit, there are four resonant elements 12, 13, 14 between the resonant element 11 and the resonant element 16.
, 15, the phase difference between them is 900×5=
900×4900=900.
また、円形結合孔部18を用いて容量性間接結合をなす
ことにより(第4図参照)、共振素子11と共振素子1
6との間の位相は逆相となる。In addition, by forming indirect capacitive coupling using the circular coupling hole 18 (see FIG. 4), the resonant element 11 and the resonant element 1
6 is in reverse phase.
このため、主結合回路を伝播してきた信号(電力)とは
位相が90o(共振周波数において)異なることになる
が、その振幅は共振周波数付近においては、主結合>間
接結合
となるので、ほとんど影響を受けることがない。Therefore, the phase will be 90 degrees different (at the resonant frequency) from the signal (power) that has propagated through the main coupling circuit, but its amplitude will have little effect as the main coupling > indirect coupling near the resonance frequency. I never receive it.
一方、各共振回路の位相特性については、共振周波数か
ら雛調するにつれて位相が連続的に変化することは周知
のとおりである。また、間接結合回路が有する位相定数
は周波数に関係なくなるため、その位相差が1800と
なる所(共振周波数に比して90oの位相差の所)にお
いてそれぞれの電力が打ち消し合い、極が生ずることに
なる。このとき、急峻なフィル夕特性を得ると同時に大
きな減衰量を得るためには間接結合回路を介して漏れて
くる逆相信号の電力量を小さくしなければならない。そ
のためにも、共振周波数を中心にして位相が90o異な
る周波数での振幅値(急峻な特性と大きな減衰とを有す
る帯域通過る波器では非常に小さな値となる)と、間接
結合回路を介して得られる信号振幅値(電力)とをほぼ
等しくする必要がある。なお、本実施例では6段の帯域
通過る波器について説明を行ったが、さらに段数(次数
)が増えた場合、あるいは減少した場合のいづれについ
ても本発明を適用することは可能である。On the other hand, as for the phase characteristics of each resonant circuit, it is well known that the phase changes continuously as the frequency decreases from the resonant frequency. In addition, since the phase constant of the indirect coupling circuit has no relation to frequency, the respective powers cancel each other out at a point where the phase difference is 1800 degrees (90 degrees of phase difference compared to the resonant frequency), and a pole is generated. become. At this time, in order to obtain a steep filter characteristic and a large amount of attenuation at the same time, it is necessary to reduce the amount of power of the negative phase signal leaking through the indirect coupling circuit. To this end, we need to determine the amplitude value at a frequency whose phase differs by 90° from the resonant frequency (a very small value in a band-pass wave transmitter with steep characteristics and large attenuation), and the It is necessary to make the obtained signal amplitude value (power) approximately equal. In this embodiment, a six-stage band-passing transducer has been described, but the present invention can be applied to cases where the number of stages (order) is increased or decreased.
例えば、1仮装の帯城通過る波器を構成する場合には、
4個もしくは8個の共振素子を介して容量性の間接結合
をなすことが可能である。従来のインターディジタル形
帯城通過る波器の減衰域は第2図に示したようにヮクー
ナー特性をもち、ゆるやかな減衰特性を呈している欠点
があったが、本発明によれば第5図A,Bに示すように
、減衰城を有極化して急峻な減衰特性を得ることができ
る。For example, when configuring a wave device that passes through one disguised obi castle,
It is possible to provide indirect capacitive coupling via four or eight resonant elements. The attenuation range of the conventional interdigital band pass wave device had a damping characteristic as shown in Fig. 2, and had the disadvantage of exhibiting a gradual attenuation characteristic, but according to the present invention, the attenuation range as shown in Fig. 5 As shown in A and B, steep attenuation characteristics can be obtained by polarizing the attenuation castle.
ここで、第5図Aは共振素子11と16との間を容量性
結合したシングルポールの場合を示し、第5図Bはかか
る容量性結合に加えて共振素子12と15との間にルー
プ結合を施したダブルポールの場合を示す。以上説明し
たように、本発明インターディジタル形帯城通過る波器
によれば、立上がり特性(減衰特性)の急峻な帯城通過
る波器を実現でき、しかも立上がり特性を急峻にするの
に従来のように共振素子の段数を増やす必要がないので
、装置が大形化することもなく、また調整が困難になる
こともない。Here, FIG. 5A shows a single pole case in which resonant elements 11 and 16 are capacitively coupled, and FIG. 5B shows a loop between resonant elements 12 and 15 in addition to such capacitive coupling. The case of a double pole with a connection is shown. As explained above, according to the interdigital type wave device passing through the band of the present invention, it is possible to realize a wave device passing through the band with a steep rise characteristic (attenuation characteristic). Since there is no need to increase the number of stages of resonant elements as in the above, the device does not become larger and adjustment does not become difficult.
かくして、本発明インターディジタル形帯城通過る波器
は、無線設備に用いて不要波の除去を行うほか、アンテ
ナ共用器等に応用して端子間結合減衰量が大きく且つ挿
入損失の少ない共用器を実現できるなど、格別の効果を
得ることができる。In this way, the interdigital wave transmitter of the present invention can be used in radio equipment to remove unnecessary waves, and can also be applied to antenna duplexers, etc., to provide a duplexer with large inter-terminal coupling attenuation and low insertion loss. It is possible to obtain special effects such as being able to realize the following.
第1図AおよびBは従釆のインターディジタル形帯城通
過る波器の構造の一例を示す平面図および断面図、第2
図は第1図A,Bに示した帯域塚ろ波器の一般的な伝送
特性例を示す特性曲線図、第3図AおよびBは本発明イ
ンターディジタル形帯城通過る波器の構成の一実施例を
示す平面図および断面図、第4図は第3図Aに示した共
振素子の結合状態を説明するための線図、第5図Aおよ
びBは本発明により得られる伝送特性の2例を示す特性
曲線図である。
1〜6,11〜16・・・・・・共振素子、7,19・
・・・・・外箱(シールド)、17・・・・・・仕切板
、18・・・・・・円形結合孔部、19・・・・・・外
箱(シールド)、To・・・・・・入力変成器、TM,
…・・・出力変成器、Eck・・・・・・もれ電界。
第1図
第3図
第2図
第4図
第5図FIGS. 1A and 1B are a plan view and a sectional view showing an example of the structure of a corrugator that passes through an interdigital type belt of a subordinate, and FIGS.
The figure is a characteristic curve diagram showing an example of general transmission characteristics of the bandpass filter shown in Figures 1A and B, and Figures 3A and B are diagrams showing the configuration of the interdigital bandpass filter of the present invention. A plan view and a sectional view showing one embodiment, FIG. 4 is a diagram for explaining the coupling state of the resonant element shown in FIG. 3A, and FIGS. 5A and B show the transmission characteristics obtained by the present invention. It is a characteristic curve diagram showing two examples. 1-6, 11-16... Resonance element, 7, 19.
...Outer box (shield), 17...Partition plate, 18...Circular coupling hole, 19...Outer box (shield), To... ...input transformer, TM,
...Output transformer, Eck...Leakage electric field. Figure 1 Figure 3 Figure 2 Figure 4 Figure 5
Claims (1)
素子と、前記複数の共振素子を所定の空間領域に分割し
て該共振素子の主結合回路を形成するよう電磁シールド
用筐体内を仕切る仕切板とを備え、 4n個(n=1,
2,3…)の前記共振素子を隔てて一対の前記共振素子
間に電界疎結合をなすよう前記仕切板に容量性間接結合
孔を設けたことを特徴とするインターデイジタル形帯域
通過ろ波器。1. A plurality of resonant elements arranged so that the installation polarity is sequentially reversed, and a partition that divides the plurality of resonant elements into predetermined spatial regions to form a main coupling circuit of the resonant elements within the electromagnetic shielding case. board, 4n pieces (n=1,
2, 3...), wherein the interdigital type band-pass filter is characterized in that a capacitive indirect coupling hole is provided in the partition plate so as to create a loose electric field coupling between a pair of the resonant elements with the resonant elements separated from each other. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15245379A JPS6031401B2 (en) | 1979-11-27 | 1979-11-27 | Interdigital bandpass filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15245379A JPS6031401B2 (en) | 1979-11-27 | 1979-11-27 | Interdigital bandpass filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5675720A JPS5675720A (en) | 1981-06-23 |
| JPS6031401B2 true JPS6031401B2 (en) | 1985-07-22 |
Family
ID=15540843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15245379A Expired JPS6031401B2 (en) | 1979-11-27 | 1979-11-27 | Interdigital bandpass filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6031401B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58166803A (en) * | 1982-03-27 | 1983-10-03 | Fujitsu Ltd | dielectric filter |
| JPS58178602A (en) * | 1982-04-13 | 1983-10-19 | Nippon Dengiyou Kosaku Kk | Comb line type band-pass filter |
| US5153541A (en) * | 1991-05-20 | 1992-10-06 | At&T Bell Laboratories | Folded interdigital notch filter |
-
1979
- 1979-11-27 JP JP15245379A patent/JPS6031401B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5675720A (en) | 1981-06-23 |
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