JPS6032145A - Semiconductor laser drive circuit - Google Patents

Semiconductor laser drive circuit

Info

Publication number
JPS6032145A
JPS6032145A JP58141278A JP14127883A JPS6032145A JP S6032145 A JPS6032145 A JP S6032145A JP 58141278 A JP58141278 A JP 58141278A JP 14127883 A JP14127883 A JP 14127883A JP S6032145 A JPS6032145 A JP S6032145A
Authority
JP
Japan
Prior art keywords
output
semiconductor laser
current
comparator
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58141278A
Other languages
Japanese (ja)
Inventor
Masanobu Nishinomiya
西宮 正伸
Isamu Shibata
柴田 勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP58141278A priority Critical patent/JPS6032145A/en
Publication of JPS6032145A publication Critical patent/JPS6032145A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/126Circuits, methods or arrangements for laser control or stabilisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06832Stabilising during amplitude modulation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optical Head (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To eliminate the temperature effect of current-optical output characteristics by using a laser current control means which detects the intensity of the output light of a semiconductor laser to obtain a prescribed low level and a constant current control means of a laser drive modulating element which obtains a prescribed high level. CONSTITUTION:A photodetector 3 is set in proximity to a semiconductor laser 1 to detect the intensity of the output light. The outputs of monostable multivibrators 14 and 15 which work by the fall and rise of a record pulse P are supplied to sample and/hold circuits 16 and 17 respectively. The outputs of circuits 16 and 17 are supplied to comparators 18 and 19 and compared with the prescribed reference value. The output of the comparator 18 controls a current control transistor TD1 so that the optical output of the laser 1 is kept at a fixed reproduction level when the pulse P is not irradiated. The output of the comparator 19 controls the current of a constant current circuit 20 which is set in series to a switching transistor TR3 for modulation which drives the laser 1 in response to the pulse P. Thus it is possible to eliminate the effect of variation in current- optical output characteristics due to temperatures.

Description

【発明の詳細な説明】 技術分野 本発明は、光源として半導体レーザを用いた光情報記録
再生装置における半導体レーザ駆動回路に関する。
DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a semiconductor laser drive circuit in an optical information recording/reproducing device using a semiconductor laser as a light source.

従来技術 第1図は光情報記録再生装置における光ピツクアップの
一般的な溝成を示すもので、記録時には半導体レーザ駆
動回路12により記録パルスPに応じて半導体レーザ1
の駆’tlrkなして、その半導体レーザ1から出射さ
れたレーザビームがコリメータレンズ2で平行光にされ
たのち偏光ビームスプリッタ3で反射され、1/4波長
板4を泄っ℃直線偏光から円偏光になり、対物レンズ5
によりディスク7面の光記録媒体6に集光されてピット
形成による記録を行なう。また再生時には、半導体レー
ザ駆動回路12にエリ半導体レーザ1の出力を弱めたう
えで前記光栄系全通してレーザビームをディスク7面上
に集光させ、そのときのディスク7面からのIi射骨を
174波存層4を、山中rμfより照射時とは90″位
相のずれた直線偏光とし、その直線偏光を検出すること
によって再生情報を得る工5にしている。また、その直
線偏光はビームスプリッタ3を通過し、レンズ8全通し
てノ1−フミラー9でフォーカスサーボ用検出器11お
よiトラッキングサーボ用検出器10にそれぞれ導かれ
、それにより各サーボ検出がなされるよ5になっている
・ このような光情報記録再生装置にあって、記録情報はデ
ジタル信号系列の形でディスク7に記録される。そのた
め半導体レーザ1のレーザビーム出力は記録パルスPに
応じてほぼ2値的に変化し、しかも記録パルスが与えら
れていないときにもフォーカスおよびトラック検出を行
なうための再生時と同じく出力の弱いレーザビームが出
射されていなければならない、記録時におけるレーザ光
出力は再生時のそれに比較して約10倍にもなり、ディ
スク7上の情報は光記録媒体6を記録時の強いビームで
溶融除去させることにより凹凸状のピットとして記録さ
れる。そのときの様子t−第2図に示している。図中1
)1は記録レベルt”、、pzは再生レベルをそれぞれ
示しており、plはpzの約10倍に設定されている。
Prior Art FIG. 1 shows a general groove configuration of an optical pickup in an optical information recording/reproducing apparatus.
As a result, the laser beam emitted from the semiconductor laser 1 is made into parallel light by the collimator lens 2, reflected by the polarizing beam splitter 3, and passed through the 1/4 wavelength plate 4. It becomes polarized light, and the objective lens 5
The light is focused on the optical recording medium 6 on the surface of the disk 7, and recording is performed by forming pits. In addition, during reproduction, the output of the semiconductor laser 1 is weakened in the semiconductor laser drive circuit 12, and the laser beam is focused on the surface of the disk 7 through the entire optical system. The 174 wave layer 4 is linearly polarized light with a phase shift of 90'' from the irradiation time from Yamanaka rμf, and the reproduced information is obtained by detecting the linearly polarized light.In addition, the linearly polarized light is The light passes through the splitter 3, passes through the entire lens 8, and is guided to the focus servo detector 11 and the i-tracking servo detector 10 by the nozzle mirror 9, whereby each servo is detected. - In such an optical information recording/reproducing device, recorded information is recorded on the disk 7 in the form of a digital signal series.Therefore, the laser beam output of the semiconductor laser 1 is almost binary in accordance with the recording pulse P. Even when recording pulses are not being applied, a laser beam with a weak output must be emitted to perform focus and track detection, just as it is during playback.The laser light output during recording is equal to that during playback. The information on the disk 7 is recorded as uneven pits by melting and removing the optical recording medium 6 with a strong beam during recording.The situation at that time - Fig. 2 1 in the figure.
)1 indicates the recording level t'', pz indicates the reproduction level, and pl is set to about 10 times pz.

従来、このような光情報記録再生装置における半導体レ
ーザ1の駆動を行なわせる場合、記録動作中のレーザ出
力全記録パルス照射時以外は再生レベルに保持させるよ
うにしている(第2図参照)。
Conventionally, when driving the semiconductor laser 1 in such an optical information recording/reproducing apparatus, the laser output is kept at the reproduction level except when the entire recording pulse is irradiated during the recording operation (see FIG. 2).

しかしこのような手段をとると、第3図に示す工5に、
半導体レーザ1の微分員子効率が温度によって変化した
場合、電流−光出力IF¥性の傾きが変わることがあり
、そのため記録パルス照射時における半導体レーザ1の
光出力が変動してしまうことになり、正しい形状のピッ
ト全形成することができなくなってしまう、すなわち、
第3図において、光出力に応じてII、I2.I3の値
を制御し、かつ制御パルスの振幅A全一定にしても、温
度T2の場合における記録パルス照射時の光出力レベル
が’ro、’r、の場合に比してpzからp’tに低下
してしまうことVCなる。
However, if such a measure is taken, step 5 shown in Fig. 3 will result.
If the differential member efficiency of the semiconductor laser 1 changes with temperature, the slope of the current-optical output IF characteristic may change, which causes the optical output of the semiconductor laser 1 to fluctuate during recording pulse irradiation. , it becomes impossible to form all pits with the correct shape, i.e.,
In FIG. 3, II, I2. Even if the value of I3 is controlled and the amplitude A of the control pulse is kept constant, the optical output level during recording pulse irradiation at temperature T2 will vary from pz to p't compared to the case of 'ro, 'r. It becomes VC that it decreases to.

目的 本発明は以上の点を考慮してなされたもので、半導体レ
ーザの温度による電流−光出力特性の変動の影響を受け
ることなく、常に安定した情報記録を精度良く行なわせ
ることができるようにした光情報記録再生装置における
半導体レーザ駆動回路を堤供するものである。
Purpose The present invention has been made in consideration of the above points, and has an object to enable stable and accurate information recording at all times without being affected by fluctuations in current-light output characteristics due to temperature of a semiconductor laser. The present invention provides a semiconductor laser drive circuit for an optical information recording/reproducing device.

構成 以下、添付図面を参照して本発明の一実施例について詳
述する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will now be described in detail with reference to the accompanying drawings.

本発明による半導体レーザ駆動回路にあっては、第4図
に示すように、半導体レーザ1に近接して設けられてそ
の出射光の強度を検出するホトディテクタ13と、記録
パルスPの立下りで動作する単安定マルチバイブレータ
14および同じ(その立上りで動作する単安定マルチバ
イブレータ15の各出カケそれぞれサンプリングパルス
として、ホトディテクタ13の出力をサンプルホールド
するサンプルホールド回路16.17と、それら各サン
プルホールド出力の電圧111!VF1x* Vsz 
k基準設定値VreftVrefzとそれぞれ比較する
比較器18.19と、比紋器18の出力にもとづいて記
録パルス照射時以外に半導体レーザ1の光出力を一定の
再生レベルに保持させるべく設けられた電流制御用トラ
ンジスタT’rs と、記録パルスPに応じて半導体レ
ーザ1を駆動する変調用のスイッチングトランジスタT
r3 と直列に設けられた定電流回路20と、前記比較
器19の出力にもとづいて記録パルス照射時に半導体レ
ーザ1の光出力を一定の記録し境ルに保持させるべく定
電流回路20における電流制御をなす電流制御用トラン
ジスタ’I’rzとによって構成すれている。
In the semiconductor laser drive circuit according to the present invention, as shown in FIG. Sample and hold circuits 16 and 17 sample and hold the output of the photodetector 13 as a sampling pulse for each output of the monostable multivibrator 14 that operates and the monostable multivibrator 15 that operates at the rising edge of the monostable multivibrator 14, and their respective sample and hold circuits. Output voltage 111!VF1x* Vsz
A current is provided to maintain the optical output of the semiconductor laser 1 at a constant reproduction level except when recording pulses are irradiated, based on the outputs of the comparators 18 and 19, which compare the k reference set values Vreft and Vrefz, respectively, and the comparer 18. A control transistor T'rs and a modulation switching transistor T that drives the semiconductor laser 1 according to the recording pulse P.
A constant current circuit 20 is provided in series with r3, and current control in the constant current circuit 20 is performed based on the output of the comparator 19 to record the optical output of the semiconductor laser 1 at a constant level and keep it within a certain limit during recording pulse irradiation. A current control transistor 'I'rz constitutes a current control transistor 'I'rz.

このように構成された本発明による半導体レーザ駆動回
路の動作について、以下説明をする。
The operation of the semiconductor laser drive circuit according to the present invention configured as described above will be explained below.

ホトディテクタ13の検出出力aがサンプルホールド回
路16.17にそれぞれ与えられ、そこで記録パルスP
の立下り、立上りにそれぞれ同期したサンプリングパル
ス(lb*cicエリサンプルホールドされる。しかし
て、サンプルホールド回路16の出力dは記録パルス照
射時以外すなわち再生レベルにある半導体レーザ1の光
出力の変動を示し、またサンプルホールド回路17の出
力eは記録パルス照射時における半導体レーザ1の光出
力の変動を示している。第5図に、各部18号のタイム
チャートを示している。
The detection output a of the photodetector 13 is given to sample and hold circuits 16 and 17, respectively, where the recording pulse P
The sampling pulse (lb*cic) is sampled and held in synchronization with the falling and rising edges of . Therefore, the output d of the sample hold circuit 16 corresponds to fluctuations in the optical output of the semiconductor laser 1 which is at the reproduction level except when the recording pulse is irradiated. , and the output e of the sample hold circuit 17 shows the fluctuation of the optical output of the semiconductor laser 1 during recording pulse irradiation.A time chart of each section 18 is shown in FIG.

まず、記録パルス照射時以外における半導体レーザ1の
光出力を一定の再生レベルに保持させる際のrJI+作
について説明する。
First, the rJI+ operation when maintaining the optical output of the semiconductor laser 1 at a constant reproduction level except during recording pulse irradiation will be described.

すなわち、サンプルホールド回路16の出力d(電圧値
VSI )が比較器1Bに与えられ、そこで再生レベル
に応じて設定された基準匝Vrefs と比較され、そ
の差出力v1に応じて電流制御開用トランジスタ1’ 
r 1が適宜駆動される。その際、′電流制御用トラン
ジスタTrrは次式に裏って与えられるilを半導体レ
ーザIVC供給するJ:5に一動作する。
That is, the output d (voltage value VSI) of the sample and hold circuit 16 is given to the comparator 1B, where it is compared with a reference value Vrefs set according to the reproduction level, and the current control open transistor is selected according to the difference output v1. 1'
r1 is driven accordingly. At this time, the current control transistor Trr operates once at J:5 when the semiconductor laser IVC supplies il given by the following equation.

R。R.

いま第6図に示すように、温度T1からT2になるよう
に電流−光出力特性が変化したとすると、当初のIM、
流に対する光出力がpt (再生レベルとなる)からp
′lに増加しよりとする。そのためサンプルホールド回
路16の出力dの電圧VSIが第5図に示すように増加
しようとするが、その際比較器18においてその電圧V
Stと基準電圧Vreft とが等しくなるように負帰
還がかかつているので、比較器+8ノ出力vlがVat
 =VrefxにILるまで低下することになる。しか
してIII記(1)式の関係から、電流i1は第6図に
おける1′1 まで減少して光出力がps となるよう
に制御される。すなわら、電流−光出力特性が変化して
も半導体レーザ1の記録パルス照射時以外の光出力は常
に一足の再生レベルpに保持されることになる・ 次に、記録パルス照射時に半導体レーザ1の光出力を一
定の記録レベルに保持させる際の動作について説明する
・ すなわち、サンプルホールド回路17の出力e(電圧値
v82)が比較器19に与えられ、そこで記録レベルに
応じて設定された基llAl1i−Vref2 と比較
され、その差出力v2に応じて屯流制rMl用トランジ
スタTr2が適宜駆動される。その際、′tK流11i
11111tl用トランジスタTr2は次式によって与
えられる市流’+f定電流回路2oにおける一方のトラ
ンジスタTr6に供給する。
As shown in FIG. 6, if the current-light output characteristics change from temperature T1 to T2, the original IM,
The optical output for the current is from pt (reproduction level) to p
′l. Therefore, the voltage VSI of the output d of the sample and hold circuit 16 tries to increase as shown in FIG.
Since negative feedback is applied so that St is equal to the reference voltage Vreft, the output vl of the comparator +8 is equal to Vat.
=Vrefx. According to the relationship of equation (1) in III, the current i1 is reduced to 1'1 in FIG. 6, and the optical output is controlled to be ps. In other words, even if the current-optical output characteristics change, the optical output of the semiconductor laser 1 other than when irradiating the recording pulse is always maintained at the playback level p. Next, when irradiating the recording pulse, the optical output of the semiconductor laser 1 The operation when holding the optical output of 1 at a constant recording level will be explained. In other words, the output e (voltage value v82) of the sample and hold circuit 17 is given to the comparator 19, where it is set according to the recording level. It is compared with the base 11Al1i-Vref2, and the current limiting transistor Tr2 is appropriately driven according to the difference output v2. At that time, 'tK style 11i
The transistor Tr2 for 11111tl is supplied to one transistor Tr6 in the current '+f constant current circuit 2o given by the following equation.

2 このとき変調用のスイッチングトランジスタTr3がオ
ンになっているので、鼠間流回路20における他方のト
ランジスタ’I’rsが半導体レーザ1に電流12を供
給するように動作する。したがって、半いま第6図に示
すように、温度がT1がらT2vcK化すると、前述の
場合と全く回を子にして比較器18ノ出力v1がVEl
l =’Vreft K11ルまで1氏下するとともV
(、比’iff器t9の出力v2がv82 =Vref
zになるまで低下し、それに↓すniJ Ffe (1
)v (2)式の関係から半導体レーザ1に供給される
1圧流i3は第6図における凰′3まで減少して光出力
が帛に記録レベルp2になるように保持される。
2 At this time, since the modulation switching transistor Tr3 is on, the other transistor 'I'rs in the mouse current circuit 20 operates to supply the current 12 to the semiconductor laser 1. Therefore, as shown in FIG. 6, when the temperature changes from T1 to T2vcK, the output v1 of the comparator 18 becomes VEL, which is completely similar to the case described above.
l = 'Vreft K11 down by one degree and V
(, the output v2 of the ratio 'iffer t9 is v82 = Vref
z, and then ↓niJ Ffe (1
)v From the relationship in equation (2), the 1-pressure flow i3 supplied to the semiconductor laser 1 is reduced to 0'3 in FIG. 6, and the optical output is immediately maintained at the recording level p2.

また、記録パルス照射時以外VCはスイッチングトラン
ジスタTr3がオフするので、軍主流回路2゜のトラン
ジスタTr5には他方のスイッチングトランジスタTr
4が?I!流1流管2給するようになり、半導体レーザ
1には電流jxLか供給されなくなる。
In addition, since the switching transistor Tr3 of VC is turned off except during recording pulse irradiation, the other switching transistor Tr5 of the military main circuit 2° is
4? I! 1 current is supplied to the tube 2, and the semiconductor laser 1 is no longer supplied with the current jxL.

1、Cお、以上の説明では光ディスクにおけろ情報の記
録、再生を行なわせる場合について述べたが、本発明に
あっては、その他レーザビームの強弱で情報の記録をな
すものにおいて広く適用することができることはいうま
でもない。′f、1こ、ホトディテクタの出力をサンプ
ルホールドする手段についても、要は記録パルス照射時
と再生レベル時の各半導体レーザの光出力をそれぞれ倹
tLlできればよいのであって、それ以外に例えばピー
クボールド回路を用いるエラにしてもよい。
1. C. In the above explanation, we have described the case of recording and reproducing information on an optical disk, but the present invention can be widely applied to other devices in which information is recorded using the intensity of a laser beam. Needless to say, it can be done. As for the means for sampling and holding the output of the photodetector, it is sufficient if the optical output of each semiconductor laser can be measured at the time of recording pulse irradiation and at the reproduction level, and in addition, for example, the peak An error using a bold circuit may also be used.

効果 以上、本発明による半纏体レーザ駆動回・烙Vこあって
は、半導体レーザの出射光の強度k trQ出するホト
ディテクタと、そのホトディテクタQ回出出力にもとづ
いて弱レベルにある半導体レーザ出力をホールドさせる
第1の手段と、同じく強レベルにある半導体レーザ出力
をホールドさせる第2の手段と、その第1の手段のホー
ルド出力と弱レベルの、l占弗II道との比中交をなす
第1の比較器と、その第2の手段のホールド出力と強レ
ベルの基準イ直との比較をなす第2の比較器と、第1の
比較器の差出力が零になるように半導体レーザにAUf
Af、を供給する第1の電流制伺手段と、記録パルスに
応じて半導体レーザを駆動する変調素子と直列に設けら
れた冗′屯流回路と、前記第2の比較器の差出力が零に
なるように定電流回路の屯流制rilllをなす第2の
屯流制で同手段とによって(み成されたもので、記(C
歇ルIJ作時におけろ半導体レーザの強9弱の光出力レ
ベルを温度変化などによる半導体レーザの電流−光出力
時1主の変動(特に傾きの変動)の影響1受けることな
く常に一定に保持さ−ビることができ、元i−M報記録
再生装置にあって安定した記録、再生を行なわせること
ができるとい5泄れた利点を有している。
As described above, the semi-integrated laser driving circuit according to the present invention includes a photodetector that emits the intensity ktrQ of the output light of the semiconductor laser, and a semiconductor laser that is at a weak level based on the output of the photodetector Q. A first means for holding the output, a second means for holding the semiconductor laser output which is also at a strong level, and a Philippine-Chinese exchange between the hold output of the first means and the weak level The difference output between the first comparator that compares the hold output of the second means with the strong level reference I, and the first comparator becomes zero. AUf in semiconductor laser
A first current control means for supplying Af, a redundant current circuit provided in series with a modulation element for driving a semiconductor laser in accordance with a recording pulse, and a differential output of the second comparator is zero. A second torrent flow control circuit is used to control the torrent current of the constant current circuit so that
During intermittent IJ operation, the optical output level of the semiconductor laser at 9 or 10 degrees is always kept constant without being affected by the main fluctuations (particularly the fluctuations in slope) of the semiconductor laser's current-light output due to temperature changes, etc. It has five distinct advantages, such as being able to perform stable recording and reproduction in the original i-M information recording and reproducing apparatus.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は一般的な光情報記録再生装置における元ピック
アップの構成を示す図、第2図は記号時における半導体
レーザの光出力およびディスク而における記録状態を示
す図、第3図は従来の半導体レーザ駆動の場合における
電流−光出力特性を示す図、第4図は本発明による半導
体レーザ駆動回路の一実施例を示す電気的結線図、第5
図は同実施例における各部信号のタイムチャート、第6
図は同実施例の場合における電流−)f:、出力特性を
示す図である。 1・・・半導体レーザ 13・・・ホトディテクタ 1
4゜15・・・単安定マルチバイブレータ 16.17
・・・サンプルホールド回路 18.19・・・比較器
 20・・・定電流回路 Tr b Tr 2・・・電
流制御用トランジスタTr3・・・スイッチングトラン
ジスタ(変調素子)出願人代理人 鳥 井 清 第1図 第2図 0−−−−−−−−−−−− 第3図 AA 第5図 0−−−−−−−−−−−−−−−一 時開 □ 第6図
Fig. 1 is a diagram showing the configuration of the original pickup in a general optical information recording/reproducing device, Fig. 2 is a diagram showing the optical output of the semiconductor laser at symbol time and the recording state on the disk, and Fig. 3 is a diagram showing the conventional semiconductor laser. FIG. 4 is an electrical connection diagram showing an embodiment of the semiconductor laser drive circuit according to the present invention; FIG.
The figure is a time chart of each part signal in the same embodiment, No. 6
The figure is a diagram showing the current -)f: and output characteristics in the case of the same embodiment. 1... Semiconductor laser 13... Photodetector 1
4゜15... Monostable multivibrator 16.17
...Sample hold circuit 18.19...Comparator 20...Constant current circuit Tr b Tr 2...Current control transistor Tr3...Switching transistor (modulation element) Applicant's agent Kiyoshi Torii Figure 1 Figure 2 0 ------------- Figure 3 AA Figure 5 0 -------------- Temporarily open □ Figure 6

Claims (1)

【特許請求の範囲】[Claims] 半導体レーザの出射光の強度を検出するホトディテクタ
と、その検出出力にもとづいて弱レベルにある半導体レ
ーザ出力をホールドさせる第10平膜と、同じく強レベ
ルにある半導体レーザ出力をホールドさせる第2の手段
と、その第1の手段のホールド出力と弱レベルの基準値
との比vヲ1よす第1の比較器と、その第2の手段のホ
ールド出力と強レベルの基準値との比較をなす第2の比
較器と、第1の比軟邪の差出力が零になる工5に半導体
レーザに1流を供給する第1の市流制イ111手段と、
記録パルスに応じて半導体レーザを駆動するf調素子と
直列に設けられた駕4流回路と、−1記第2の比較器の
差出力が零になるように定電流回路の電流制御をなす第
2の電流制御手段とに、Cら一イを曾cl? 44q 
v−平;rtlk+ノ aum7J+l+1FILI&
a photodetector that detects the intensity of the emitted light from the semiconductor laser; a tenth flat film that holds the semiconductor laser output at a weak level based on the detected output; and a second flat film that also holds the semiconductor laser output that is at a strong level. means, a first comparator for making a ratio v1 between the hold output of the first means and the weak level reference value, and a first comparator for comparing the hold output of the second means with the strong level reference value. a first current control means 111 for supplying the first current to the semiconductor laser in the second comparator and the first current comparator 5 in which the difference output between the first and second comparators becomes zero;
The current of the constant current circuit is controlled so that the difference output between the second comparator (-1) and the second comparator (-1) is zero. The second current control means is connected to the second current control means. 44q
v-flat;rtlk+ノ aum7J+l+1FILI&
JP58141278A 1983-08-01 1983-08-01 Semiconductor laser drive circuit Pending JPS6032145A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58141278A JPS6032145A (en) 1983-08-01 1983-08-01 Semiconductor laser drive circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58141278A JPS6032145A (en) 1983-08-01 1983-08-01 Semiconductor laser drive circuit

Publications (1)

Publication Number Publication Date
JPS6032145A true JPS6032145A (en) 1985-02-19

Family

ID=15288171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58141278A Pending JPS6032145A (en) 1983-08-01 1983-08-01 Semiconductor laser drive circuit

Country Status (1)

Country Link
JP (1) JPS6032145A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761659A (en) * 1985-07-02 1988-08-02 Asahi Kogaku Kogyo Kabushiki Kaisha Temperature and aging compensated drive circuit in a semiconductor laser beam printer
JPH01223641A (en) * 1988-03-01 1989-09-06 Matsushita Electric Ind Co Ltd laser drive circuit
JPH01256034A (en) * 1988-04-05 1989-10-12 Matsushita Electric Ind Co Ltd Laser drive circuit
EP0219124A3 (en) * 1985-10-16 1990-05-30 Sharp Kabushiki Kaisha Beam controller for magneto-optical disc memory system
EP1033705A3 (en) * 1999-03-02 2001-10-17 Sharp Kabushiki Kaisha Optical disk device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840878A (en) * 1981-09-04 1983-03-09 Hitachi Ltd Driving method for semiconductor laser
JPS5894143A (en) * 1981-12-01 1983-06-04 Matsushita Electric Ind Co Ltd optical recording and reproducing device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840878A (en) * 1981-09-04 1983-03-09 Hitachi Ltd Driving method for semiconductor laser
JPS5894143A (en) * 1981-12-01 1983-06-04 Matsushita Electric Ind Co Ltd optical recording and reproducing device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761659A (en) * 1985-07-02 1988-08-02 Asahi Kogaku Kogyo Kabushiki Kaisha Temperature and aging compensated drive circuit in a semiconductor laser beam printer
EP0219124A3 (en) * 1985-10-16 1990-05-30 Sharp Kabushiki Kaisha Beam controller for magneto-optical disc memory system
JPH01223641A (en) * 1988-03-01 1989-09-06 Matsushita Electric Ind Co Ltd laser drive circuit
JPH01256034A (en) * 1988-04-05 1989-10-12 Matsushita Electric Ind Co Ltd Laser drive circuit
EP1033705A3 (en) * 1999-03-02 2001-10-17 Sharp Kabushiki Kaisha Optical disk device
US6728183B1 (en) 1999-03-02 2004-04-27 Sharp Kabushiki Kaisha Optical disk device

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