JPS6036670A - Catalyst for electroless copper plating - Google Patents
Catalyst for electroless copper platingInfo
- Publication number
- JPS6036670A JPS6036670A JP14463683A JP14463683A JPS6036670A JP S6036670 A JPS6036670 A JP S6036670A JP 14463683 A JP14463683 A JP 14463683A JP 14463683 A JP14463683 A JP 14463683A JP S6036670 A JPS6036670 A JP S6036670A
- Authority
- JP
- Japan
- Prior art keywords
- palladium
- compound
- copper
- catalyst
- bivalent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 title claims abstract description 18
- 239000003054 catalyst Substances 0.000 title claims abstract description 14
- 229910052802 copper Inorganic materials 0.000 title abstract description 19
- 239000010949 copper Substances 0.000 title abstract description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 23
- 150000001875 compounds Chemical class 0.000 claims abstract description 15
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims abstract description 9
- 239000008103 glucose Substances 0.000 claims abstract description 9
- 150000002941 palladium compounds Chemical class 0.000 claims abstract description 9
- 239000005749 Copper compound Substances 0.000 claims abstract description 6
- 150000001880 copper compounds Chemical class 0.000 claims abstract description 6
- 229910000831 Steel Inorganic materials 0.000 claims description 6
- 239000010959 steel Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 5
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 abstract description 5
- 229910021606 Palladium(II) iodide Inorganic materials 0.000 abstract description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 abstract description 2
- BHZSLLSDZFAPFH-UHFFFAOYSA-L palladium(2+);difluoride Chemical compound F[Pd]F BHZSLLSDZFAPFH-UHFFFAOYSA-L 0.000 abstract description 2
- HNNUTDROYPGBMR-UHFFFAOYSA-L palladium(ii) iodide Chemical compound [Pd+2].[I-].[I-] HNNUTDROYPGBMR-UHFFFAOYSA-L 0.000 abstract description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 abstract 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 abstract 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 abstract 1
- 229910021592 Copper(II) chloride Inorganic materials 0.000 abstract 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 abstract 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- WQZGKKKJIJFFOK-ZZWDRFIYSA-N L-glucose Chemical compound OC[C@@H]1OC(O)[C@@H](O)[C@H](O)[C@H]1O WQZGKKKJIJFFOK-ZZWDRFIYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 210000004709 eyebrow Anatomy 0.000 description 2
- BBKFSSMUWOMYPI-UHFFFAOYSA-N gold palladium Chemical compound [Pd].[Au] BBKFSSMUWOMYPI-UHFFFAOYSA-N 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- INIOZDBICVTGEO-UHFFFAOYSA-L palladium(ii) bromide Chemical compound Br[Pd]Br INIOZDBICVTGEO-UHFFFAOYSA-L 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- 241000208140 Acer Species 0.000 description 1
- 241000167854 Bourreria succulenta Species 0.000 description 1
- HIIDLYZHJGBERX-UHFFFAOYSA-N C12(C(=O)CC(CC1)C2(C)C)C.[Au] Chemical compound C12(C(=O)CC(CC1)C2(C)C)C.[Au] HIIDLYZHJGBERX-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 244000061508 Eriobotrya japonica Species 0.000 description 1
- 235000009008 Eriobotrya japonica Nutrition 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 101100314144 Mus musculus Tnip1 gene Proteins 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 241001474791 Proboscis Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000013040 bath agent Substances 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 235000019693 cherries Nutrition 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- -1 gold camphor copper Chemical compound 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 235000015243 ice cream Nutrition 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- HBEQXAKJSGXAIQ-UHFFFAOYSA-N oxopalladium Chemical compound [Pd]=O HBEQXAKJSGXAIQ-UHFFFAOYSA-N 0.000 description 1
- 229910003445 palladium oxide Inorganic materials 0.000 description 1
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、無ｗＬ解銅めっき用触媒に関丁ゐ〇無電解銅
めっ１ハ印刷配線也の分野で、槓層似寺の絶縁基＆に回
路ｒ杉成丁ゐために広（用いられている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a catalyst for electroless copper plating, and is used in the field of printed wiring for electroless copper plating. Wide (used for narrow).
Ｃの場合、絶縁基板の無電解銅めっきか施δｎ、ゐ而は
活性化、丁ｌｆ）ち無電解鋼めっきのための触媒核？中
心にして、無電解銅めつ＠液中の銅イオンが析出し、成
長してｆ７ｐＪ膜となり、回路とな／）。In the case of C, is the electroless copper plating of the insulating substrate or δn, i.e., the activation, D), the catalyst nucleus for the electroless steel plating? At the center, copper ions in the electroless copper solution precipitate and grow to form an f7pJ film, forming a circuit.
絶縁基板を活性仕丁ゐために、無電解銅めっきのための
触媒となる金属パラジウムケ絶縁基板表ｒｍｖｃル成さ
せてい心。In order to activate the insulating substrate, we have created a metal palladium insulating substrate surface rmvc that serves as a catalyst for electroless copper plating.
９Ｆ米、この曾四バシジウムσ、
ＰｄＣ６ｔ ＋ ＳｎＣ６ｍ”＞ Ｐｄ＋５ｎＣＪ−の
反末６で侍らｔじＣおり、硅礫土などの相体Ｖｃ担持芒
ｒ１−１触媒１′［用ｒ来−ｆように工夫さｎ、ていゐ
。9F rice, this basidium σ, PdC6t + SnC6m''> Pd + 5n It's ingenious.
その′ｆｃａＶ、Ｓｎ、Ｃ１７１どの不Ａ 吻に％（言
（ｒりえに、相棒ｒ１丈）ＩＴするたダハ接盾剤混入し
、アティティプ印刷配勝恨用の成眉剤（眉媒人り）や１
碩層孕忙装墳する場合、でり、ねじ７’Ｌか発生し、杷
杉性ＶＣ離Ａがあｆ）、又、絶縁電線の肥林層中に混入
丁ゐことＣＪ困離でめっｋＯ１又応さ・ぜて侍ら１１５
、力ｎ熱ｅこよＱ盆踊パラジウム忙生成丁／）錯化は物
忙言む無電解鋼めっき用Ｍ（媒でめな。The 'fcaV, Sn, C171, etc.' are mixed with % (words (rrieni, partner r1 length) IT, roof shielding agent), eyebrow growth agent (eyebrow mediator) for Atitipu printing distribution, etc. 1
If the burial mound is buried in a white layer, a screw 7'L will occur, and the VC separation A of loquat will occur (f), and the insulated wire will be mixed into the fertile layer, also known as CJ. kO1 Matataesa Zete Samurai et al. 115
, power n heat e koyo Q Bon dance palladium busy production knife /) Complexation is busy for electroless steel plating M (medium).
２１曲のパラジウム化ｆｔ物としては、極比パラジウム
（ｎハ フッ化パラジウム（１１）％某化バクジウム（
ｎＪｂ ヨウ化パラジウム０１ｊ１硝取バラジクム（Ｉ
ｌｌ、鎖酸パラジウム（Ｊ帆醒化バ２ジクム（”）ｓ
誠化バラジウム（ＩＩ）及びこｎ、らの混合物が使用さ
几ゐ。The palladium ft products of the 21 songs include extremely high palladium (n) palladium fluoride (11)% bacdium chloride (
nJb Palladium iodide 01j1 Nittri Baladicum (I
ll, palladium chain acid
Valadium (II) and mixtures thereof are used.
ハロゲン化物、特に塩化パラジウム（ＩＩ）が好ましい
ｏ ｔ１１ｆｔ＋、２価の銅化合物としては塩化鋼ＣＩ
）、塩化鋼（川、硫酸銅ｆｉｌ）及びこｎらのｍ合物が
１更用をｎ−な。Halides, particularly palladium (II) chloride, are preferred, and divalent copper compounds include steel chloride CI
), chlorinated steel (copper sulfate fil), and their m-compounds are used once again.
ｆ ル）−スとして０、Ｄ−クルコース、Ｌ−グルコー
スが１史用きｎ／）。0, D-curcose, and L-glucose were used as n/).
２１１１１１のパラジウム化合物ゲグルコースと反尾、
憾ゼて錯化合物τ得をＶＣは１例えは１）−クルコース
１ｇＫ水２ｇｋ加え、こｆｌ、に塩化パラジウム０．２
５ｇケ加え２０分間５０℃に加熱、損とう丁ゐことに、
Ｌり傅らｎ、る、この錯化合物に８０℃以上の加熱で金
属パラジウムｒ生取する○得らｎた錯化合物では、＊化
パラジウム（ＩＩＪにグルコースの水酸基に配位してお
り、加熱すると水酸基の結合している炭素原子に近接す
る炭素原子に結合している氷菓によ９２価のパラジウム
は還元式ｎて金属パラジウム？生成する。211111 palladium compound geglucose and anti-tail,
Finally, the complex compound τ is obtained. VC is 1, for example, 1) - 1 g of curcose is added to 2 g of water, and to this fl, 0.2 palladium chloride is added.
Add 5g and heat to 50℃ for 20 minutes.
In the complex compound obtained, palladium metal (IIJ is coordinated to the hydroxyl group of glucose, Then, the 92-valent palladium is reduced to form metallic palladium by the ice cream bonded to the carbon atom adjacent to the carbon atom to which the hydroxyl group is bonded.
（１）錯化合物を含む水浴准中に被めっさ′勿紮凝潰［
７弓１＠Ｉ：ｉｉ−力１１熱−ｆめことＶＣより被めっ
き物表［ｌ′Ｉ′Ｉｒ金禍バシジウムヶ生成させる。(1) When a water bath containing a complex compound is coated with water, it does not clump.
7 Bow 1@I: ii-Force 11 Heat-f Mekoto VC to form plated object surface [l'I'Ir Gold Basidium.
（２）ｊ゛ル化什物ゲ、コムーフェノール系寺の接盾酌
申ｋ（分散し、この接有削紮ガラス；ｆｈにエホキン？
含没した槓層板咎の表面に塗布し、カ１１熱乾床する段
′南で金−パラジウム忙生成させゐ０
（５）錯化合管Ｊ忙、エホキシ仙脂のアセトン浴数中に
分散さ−ぜ々ワニス紮カラス布等の基拐に召泣させ、ス
市′にのｈ法により積層板を装コ魚丁ゐ。ゾリフ”レグ
の乾繰時、槓鳩似の刀ロ熱カ１１圧時の熱により番４（
ζパラジウムが生成丁ゐ。(2) J゛Cumulative objects, the enclosing cup of worship of the Komuphenol temple (dispersed, this attached cut glass; Ehokin in fh?
Apply it to the surface of the impregnated laminated plate and heat it in a dry bed to form gold-palladium in the south. I then applied the varnish to the base of the cloth, etc., and mounted the laminate board using the H method on the surface. When drying the "Zorifu" leg, the heat of the sword, which resembles a dove, at 11 pressures caused the number 4 (
ζ Palladium is produced.
（４）錯化合物ケ、小すゴステル樹脂の有恢浴剤浴成牛
に分散させ、流延法でフィルム領つくべ）０南情劇酌の
〃［１熱除去中の力ｎ熱により金属パラジウムか生ｂｙ
、Ｔな〇
（５）錯化合１り１τ、ポリイミドのテトラヒドロフラ
ン浴液中に分散させ％胎勝に機種する。焼さ付け時の熱
ｙｃ 、ｒ、 り金部パラジウムが生成し触媒性紮壱丁
ルノ３縁箪練が何ら看、る。(4) The complex compound is dispersed in a bathing agent bath of Kosugostel resin, and the film is made into a film by the casting method. palladium or raw by
, T〇(5) Complex compound 1 τ, polyimide is dispersed in a tetrahydrofuran bath solution and modeled to % strength. During baking, the heat yc, r, the metal part palladium is generated, and the catalytic process is not observed.
以上読切したよ５に、本発明の無電解銅めっき用触媒は
、次の利点が違ぜら１．ゐ。Having read the above, the catalyst for electroless copper plating of the present invention has the following advantages: 1. Wow.
（１）生成する金属パラジウムの粒子ｌ１ＩＩかいため
、侍ら１．た無電解めっさの特性が浚ｎ、ゐ。(1) Metallic palladium particles produced l1II, Samurai et al.1. The characteristics of electroless plating are as follows.
（２）硅櫟土等の担体？使用しないですむので、浴准中
での使用が可能でめり、均−混合が各局Ｏ
＜５） Ｓｎ、Ｃ７寺の不純物葡汀まないため、侍らｎ
た無電解めっきの特性が良い。(2) A carrier such as silica clay? Because it does not need to be used, it can be used in the bath, and the uniform mixing is O < 5) Since the impurities of Sn and C7 do not accumulate, the samurai n
The properties of electroless plating are good.
〜５−
十 糸売 を舊ＩＴ −ｘｉ、’：’−イ芽１、事件の
表示
１、！；川用８年特語願第１４４６３６号２、発明の名
称
無匍帝同めっき用端煤
３、補正をする者
事件との関係 特許用）臥
住所 東京都新宿区西新宿二丁目１番１号名称（４４５
）口立イレ戊工業株式会社代表打横山亮次
４、 イＵｌｊノ（
■１６０
居所 東京？Ｉ１ｍ宿区西新宿ニリＪ羽１番１憂口立イ
誠Ｔ業株式会社内
（電話 東京 ３４６−３１１１． （大代表）６、補
正の内容
歴パ
シＪ琳ルの通り。~5- 10 IT sales IT -xi,':'-Ime 1, incident display 1,! ; Kawayo 8th year special language application No. 144636 2, name of the invention Mukantei same plating end soot 3, relationship with the case of the person making the amendment (for patent) Address 1-1 Nishi-Shinjuku 2-chome, Shinjuku-ku, Tokyo Issue name (445
)Kuchitachi Irebo Kogyo Co., Ltd. representative hitter Ryoji Yokoyama 4, Lee Uljno (■160 Residence Tokyo? I1m Shuku-ku Nishi-Shinjuku Niri J Ha 1-1 Yuguchi Tachiisei Tgyo Co., Ltd. (Telephone Tokyo 346- 3111. (Major representative) 6. As per the history of the amendments.
明 網１１ 曹
１、発明の名セ１１
無′亀屓銅ル′）つき用触媒
２、％旧−粕求の剃）囲
１、 ２ ｌｌｌ１＋のパラジウム化合物又は、１価、
２１［１１１の銅化合物ｒグルコースと反応させて侍ら
れ、／Ｊｌｌ熱により金橋パラジウム又は金槙組を生成
する錯化合物（ｌＩｌ′召む無電解銅めっさ用触媒。Akira 11 Sodium 1, Name of invention 11 Non-copper metal 2) Catalyst 2, % old-kasukyu no shaving) Box 1, 2 lll1+ palladium compound or monovalent,
21 [111 Copper compound r A complex compound (lIl') which is reacted with glucose and produces Kanabashi palladium or Kanamakigumi by /Jll heat.Catalyst for electroless copper plating.
５ 弁明の８４＝細な線間 本発明は％無電１屓銅めっき用触媒に関丁ゐ。5. 84 of defense = thin line space The present invention relates to a catalyst for electroless copper plating.
無電解銅めっきは、印刷配線機の分野で、槓Ｊ餉４Ｎ寺
の絶縁基板に回路ｒ形成するために広く用いらむている
。Electroless copper plating is widely used in the field of printed wiring machines to form circuits on insulating substrates.
この場合、絶縁基板の無電解銅めっきが施される匍は活
性化、丁ｌわ°らｊｒ＜ ゛妊駒組めっきのための触媒
核缶中心にして、魚箱７解銅りっさ液中の蛤ｊイオンが
析出し、成長して銅膜となり、回路となる。In this case, the plate to which the electroless copper plating of the insulating substrate is applied is activated, and the catalyst core can is placed in the center of the catalytic core can for the plating. The clam j ions inside precipitate and grow to form a copper film, which becomes a circuit.
絶縁基板３：粘１イ１．化−４” 、５７ｃめに、無′
屯解組めっきのための触媒となる金禰パラジウム又は金
橋銅會杷脈基板表曲に形成させている。Insulating substrate 3: Adhesive 1-1. -4", 57c, no'
It is formed on the surface of the Kinne palladium or Kinnebashi Copper Co., Ltd. substrate, which serves as a catalyst for tunkai plating.
従来、例えばこの金属パラジウムは、
ＨＣｌ
ＰｄＣ６ｔ ＋Ｓｎ（Ｊｇ−＝）Ｐｄ ＋５ｎＣｅ４の
反応で伶られてお９１件深土などの相体１７ｃＪ′見持
され、弧２啄作用ｉｃ ”Ａ！： ＝ｔ−よう？Ｃ工夫
ざｌしている。Conventionally, for example, this metallic palladium was combined in the reaction of HCl PdC6t +Sn(Jg-=)Pd +5nCe4 and was observed as a phase 17cJ' in deep soil etc., and the arc 2 action ic "A!: =t -Yes?C I'm trying to come up with something.
そのため、Ｓｎ、Ｃ／２２どの不純物ケ多く言む９えに
、担体ケ使用するｋめ、接盾剤ＶＣ混入し、アティティ
ブ印刷配糾敬用ｌ／）最盾削（触媒入り）付活層板を製
造する場合、そり、ねじｔ′Ｌが発生し、絶縁ｊｇ：に
難点がおジ、又、枦コ脈屯勝の絶縁層中に混入すること
は困ぬ′Ｃあった。Therefore, impurities such as Sn, C/22, etc. are often used, carriers are used, VC is mixed in as a shielding agent, and the active layer (contains catalyst) is used for active printing. When manufacturing the plate, warping and screws occur, and there are problems with the insulation, and there is no problem with the contamination of the wires into the insulation layer.
本発明にこのような点に遁み゛Ｃ４込扛たもので、２１
曲のパラジウム化合物又は１ｉ＋４＋＋、２仙ｊの測用
化ｂ−！１勿ｔ１ クルコースとノ又に、、させて１廿
ら扛。The present invention incorporates C4 in consideration of these points, and 21
Song palladium compound or 1i+4++, 2sen j medicinalization b-! 1 course t1 Curcose and Nomata, let them take 1 廿扛.
加熱に」：り金桐パラジウム又は金桶繕τ生成する錯化
合物ｒ言む無箪屏廟ν）つき用触媒である０２１′ｌ１
ＩＩのパラジウム化合物としては、Ｊム化パラジウム（
ｎ） 、ンフ化パラジウム（ｓｘ）ｓ 臭化パラジウム
（■）、ヨウ化パラジウム（ＩＩ）、側ｒｙハクンウム
（１υ。021'l1 is a catalyst for heating: a complex compound that produces gold palladium or metal paulownia.
As the palladium compound II, J-mupalladium (
n), palladium bromide (sx), palladium bromide (■), palladium (II) iodide, side rye hakunium (1υ.
ｌＷｉ服パラジウム（Ｉｉ 、酸化パラジウム（Ｉｌｌ
、佃Ｃ化パラジウム（ｎ）及びこれらの混合物が使用さ
れる。lWi clothing palladium (Ii), palladium oxide (Ill)
, palladium(n) chloride and mixtures thereof are used.
ハロゲン化物、’ｆＮＣｊ鬼化パラジウム（ＩＴ）が好
Ｒしい０１１曲、２１曲のＮ＝＝Ｊ化什物としては塩化
ン伺（１）、塩化Ｊ１４ （Ｉυ、硫酸銅（史及びこ扛
らの混合物かに用憾れる。Halides, 'fNCj demon palladium (IT) are preferred in 011 songs and 21 songs. The mixture is disgusting.
グルコースとしてｔ；ｒ、１）−グルコース、Ｌ −グ
ルコースが使用される。As glucose, t;r,1)-glucose and L-glucose are used.
２１曲のパラジウム化合９勿忙グルコースと反応させて
錯化合物を得るＫは、例えばＤ−グルコースｉｇＶＣ水
２ｇ？加え、Ｃれに塩化パラジウム０．２５ ｇＬニア
Ｊｎｊｔ２０分間５０℃に加熱、振とう丁ゐことＫより
侍られ／Ｓ、この錯化合物に８０℃シー１−、の加熱で
金属パラジウムケ生成する。Palladium Compound 9 of 21 Songs K to obtain a complex compound by reacting with glucose is, for example, 2 g of D-glucose igVC water? In addition, 0.25 g of palladium chloride was added to the mixture, heated to 50°C for 20 minutes, shaken, and then heated to 80°C to form metallic palladium.
１ｈらｔｌに錯化合物では、塩化パラジウム（ＩＯはグ
ルコースの水埴基に配位しており、加熱すると水酸基の
結合している炭素原子に近接する炭素原子に結１ｔシて
いる水系により２１曲のパラジウムに還元さ扛−Ｃ金属
パラジウムケ生成する〇本発明の鉛化自′物の１史用例
會吐明する。使用坦ｉ、Ｊｐｄ、Ｃｕの倉で＋ｍｍ重重
以下好ましい。In complex compounds, palladium chloride (IO is coordinated to the hydroxyl group of glucose, and when heated, it binds to the carbon atom adjacent to the carbon atom to which the hydroxyl group is bonded.) An example of the use of the lead-containing organic material of the present invention, which is reduced to palladium and produced by metal palladium, is explained below.It is preferable to use I, Jpd, Cu in a warehouse of +mm weight or less.
５−
（１）諾化付′ｌ勿を含゛む水浴液中に扱めっきり勿ｒ
反演し引き上げ、加熱丁ゐことにより被めっき物表囲ｅ
（金％ ハフシウム又に金Ｊｆ％餉ｒ生カ又さぜ６０
（２） 鉛化付物電、ゴムーフェノール系寺の桜７Ｍ創
申に分散し、この接宥却］′）ｄ：カラス布にエボギシ
τ百反した（貞Ｊ曽似寺の衣用１に蚤用ｊし、カ１ｊ熱
乾祿−Ｉ−る攻略で金楠パラジウム又ｅＪ金桟鋼を生成
させゐ。5- (1) If the water bath solution contains chemical substances,
The surface area of the plated object is increased by pulling it up and heating it.
(Gold% Hafsium and Gold Jf% Raw Kamatasaze 60 (2) Lead-attached object electric, dispersed in the rubber-phenol temple cherry blossom 7M creation, and this appeasement]') d: Crow I made a hundred strips of evogishi on the cloth (I used a flea for the clothing 1 of Soniji Temple, and by heat-drying it, I produced gold camphor palladium and eJ gold steel.
（５）韻化せ吻ｔ１エフＪクキン１円崩りアセトン浴液
申に分散さぜにワニスγカラス布寺のム材ｅｃ宮浸させ
、Ｓ富の力演により積層載７候漬するＯフ゛リプレグの
乾燥時、禎Ｊ曽仮の力１］熱カロ圧尚（１）熱により金
へパラジウム又は金鳩銅が生成する。(5) Disperse the proboscis t1 FJ kukin 1 yen and disperse it in the acetone bath liquid and soak it in the varnish γ crow cloth, then layer it with the force of S wealth. When drying the filipreg, palladium or gold copper is formed on gold by heat.
（４）銘化合物領、ポリエステル＠１］ぽの勺−機浴剤
浴液中ＶＣ分散させ、流延法でフィルムケつくる。壱磯
浴剤の加熱除去中のカロ熱により金属パラジウム又は金
楓鍋が生成する。(4) Special compound, polyester @1] Ponosuke - Disperse VC in a machine bath solution and make a film by casting. Metallic palladium or gold maple pot is produced by caloric heat during heating and removal of Iiso bath agent.
（５） 錯化合物ｉ１ポリイミドのテト２ヒドロン＝４
−
ラン帛准申に分散さセ、給蛛に伝しする。涜さ１−」す
Ｉｌ、ｆの熱Ｐｊより金員パラジウム又は金楠銅が生Ｉ
ｔ’＜ Ｌ、触ａ斌ｅ盆南丁絶縁電橢が侍ら石ゐ。(5) Tet2hydrone of complex compound i1 polyimide = 4
− Distributed to the Random Junshin and passed on to the supply. Sacrilege 1 - From the heat Pj of Il, f, metal palladium or gold camphor copper is produced.
t'< L, touch abin e Bonnancho insulation electric cell is samurai stone.
以上バー（、ｌｊ＋ｊｔ、７１−よりに、本発明の黒−
」涛ト廟ｙ）つき用７％ｑ（媒に、θ（の利点か庇ぜら
扛ゐ０（１）生成丁ゐ〈Ｖ柄パラジウム又は苔楓銅のｔ
’ｖ子か血１〃・いため、侍られｌζ無屯肩Ｋ）つきの
ｔＲ性が潰才ｔ６゜
（２）硅床土咎のＪｊシ体ケ秋川し用いですｈので。From the above bar (, lj+jt, 71-, the black-
7% q(medium), the advantage of θ(...
'V child or blood 1〃・I'm attended to by lζMuton shoulder K)'s tR character is trespassing t6゜(2) Jj's body is Akikawa's use of the silicon bed soil.
浴成牛での使用力）用油であり、均−混合が容易０
（３） Ｓｎ、ＣＡｌ４の不Ｍ！物を含まないため、侍
しむ、？ｃ焦喝屏めっさの付性か反い０
５−
Ａ′２ｎ−(3) No Sn, CAl4, and no M! Samurai because it does not include things? c The attachment of the pyrotechnics or the warp 0 5- A'2n-
Claims (1)
合物ｒグルコースと反末ｔ）ざぜて伶らｆｔ、、力ｎ熱
Ｖ（よジ金楓パラジウムｒ生成す々緒化合物忙冴む無電
解鋼めっき用触媒０1. Divalent palladium compound or monovalent, 21 copper compound r glucose and reaction t) zazetereira ft,, power n heat V (yojikin Kaede palladium r generation susuo compound busy) Catalyst 0 for electroless steel plating
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14463683A JPS6036670A (en) | 1983-08-08 | 1983-08-08 | Catalyst for electroless copper plating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14463683A JPS6036670A (en) | 1983-08-08 | 1983-08-08 | Catalyst for electroless copper plating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6036670A true JPS6036670A (en) | 1985-02-25 |
Family
ID=15366663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14463683A Pending JPS6036670A (en) | 1983-08-08 | 1983-08-08 | Catalyst for electroless copper plating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6036670A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110607450A (en) * | 2019-10-29 | 2019-12-24 | 上海第二工业大学 | A method for selective leaching and precipitation recovery of palladium in printed circuit boards |
-
1983
- 1983-08-08 JP JP14463683A patent/JPS6036670A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110607450A (en) * | 2019-10-29 | 2019-12-24 | 上海第二工业大学 | A method for selective leaching and precipitation recovery of palladium in printed circuit boards |
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