JPS6043291A - Displaying method of defective loop of bubble memory element - Google Patents

Displaying method of defective loop of bubble memory element

Info

Publication number
JPS6043291A
JPS6043291A JP58149821A JP14982183A JPS6043291A JP S6043291 A JPS6043291 A JP S6043291A JP 58149821 A JP58149821 A JP 58149821A JP 14982183 A JP14982183 A JP 14982183A JP S6043291 A JPS6043291 A JP S6043291A
Authority
JP
Japan
Prior art keywords
defective
loop
bubble memory
displaying
address
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58149821A
Other languages
Japanese (ja)
Other versions
JPS623511B2 (en
Inventor
Seiichi Iwasa
誠一 岩佐
Naotake Orihara
折原 尚武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58149821A priority Critical patent/JPS6043291A/en
Publication of JPS6043291A publication Critical patent/JPS6043291A/en
Publication of JPS623511B2 publication Critical patent/JPS623511B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To display the address of a defective minor loop which is printed previously on an element surface by reducing the address to specific magnification. CONSTITUTION:A print 2 of a number, etc., which is 4mm. square is formed on an original plate 1 of, for example, 10X12cm by exposure and development. In this case, 25X30=750 characters are displayed in the area of this original plate 1. A 4-megabit element has up to 240 defective loops, and when an address is represented by three digits in hexadecimal, 720 characters are possible, so that a sufficient display is obtained on this original plate. Then, the original plate 1 is reduced to, for example, 1/4 by reduction photography. In a figure, 3 is the lens of a reduction exposing device and 4 is the reduced plate of the original plate 1. The plate 4 when reduced to 1/4 is of 2.5X3cm, and the size of print on this plate is 1mm. square. Then, this reduced plate 4 is stuck to a defective loop display area 7 on the surface of the magnetic shield case 6 of a bubble memory element 5.

Description

【発明の詳細な説明】 (1)発明の技術分野 本発明は磁気バブルメモリ素子に係り、特に複数のマイ
ナーループのうち使用できない不良ループを素子表面に
表示する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a magnetic bubble memory device, and more particularly to a method for displaying an unusable defective loop among a plurality of minor loops on the surface of the device.

(7! 技術の背景 現在広く使われている磁気バブルメモリ素子は複数本の
マイナーループを持つメジャーマイナーループ方式であ
り、プロセス上の欠陥などによる動作不良マイナールー
プが含まれている。バブルメモリ素子を実際にメモリと
して動作させる時には、これ等の不良ループに情報を書
込まないような処理をする必要があり、従って、素子を
出荷する際には不良マイナーループのすべてを明確にし
ておく必要がある。
(7! Background of the technology The magnetic bubble memory device currently widely used is a major-minor loop system with multiple minor loops, and includes malfunctioning minor loops due to process defects. Bubble memory device When actually operating as a memory, it is necessary to take steps to prevent information from being written into these defective loops, so it is necessary to clarify all defective minor loops before shipping the device. be.

(3)従来技術と問題点 従来この不良ループを素子する方法として、不良ループ
の番地を記したデータシートを素子に添付することが行
なわれていた。しかしながら、素子とデータシートが別
々では多数の素子を使った装置などで混乱すること、ま
たデータシートを紛失した場合のことなどを考えると、
素子自体に不良ループを表示する要求が高まってきてお
り、一部ではすでに行なわれている。ここで、不良ルー
プ番地を素子表面に表示することを考えてみる。
(3) Prior Art and Problems Conventionally, the method for dealing with defective loops in devices has been to attach a data sheet containing the address of the defective loop to the device. However, if the device and data sheet are separate, it will be confusing in devices that use a large number of devices, and if the data sheet is lost, etc.
There is an increasing demand for indicating defective loops on the device itself, and in some cases this is already being done. Now, let us consider displaying the defective loop address on the surface of the element.

現在使われているバブルメモリ素子は256にビット及
び1メガビツトの容量であり、素子の外形は約3cm角
である。素子表面には製品形式番号及びロット番号9社
名等が表示されるため、不良ループ番地表示のために許
される面積は大体2.5cm X 3 cmとなる。ま
た表示′に用いる活字の大きさはスクリーン印刷等で素
子表面に直接印刷する場合、あるいは紙等に印刷したも
のを素子表面に貼り付ける場合でも印字品質を考慮する
と最小’1ava角前後となる。従って許容面積内に印
刷できる字(5)発明の構成 本発明は不良ループ番地が必ずしも素子上あるいは紙等
に直接印刷される必要はないこと、また印刷された数字
が必ずしも肉眼で判別可能な大きさに制限する必要はな
いことに着目して、適当な大きさに印刷された原版を縮
小写真技術により適当な大きさに縮小し許容される面積
内に納めるようにしたものである。
Bubble memory devices currently in use have a capacity of 256 bits and 1 megabit, and the external size of the device is about 3 cm square. Since the product type number, lot number, nine company names, etc. are displayed on the surface of the element, the area allowed for displaying the address of the defective loop is approximately 2.5 cm x 3 cm. Furthermore, the size of the type used for the display is at least around 1 ava angle when printing quality is considered, even when printing directly on the element surface by screen printing or the like, or when printing on paper or the like and pasting it on the element surface. Therefore, characters that can be printed within the allowable area (5) Structure of the invention The present invention is based on the fact that the defective loop address does not necessarily need to be printed directly on the element or on paper, and that the printed numbers are not necessarily large enough to be discernible with the naked eye. Taking note of the fact that there is no need to limit the size of the image, an original plate printed to an appropriate size is reduced to an appropriate size using reduction photography technology to fit within an allowable area.

すなわち、本発明は素子表面の定められた領域に不良マ
イナーループの番地を表示する磁気バブルメモリの不良
ループ表示方法に於いて、予め定められた大きさで印字
された不良マイナーループ番地を予め定められた倍率で
縮小し、しかる後に素子表面に表示することを特徴とす
るバブルメモリ素子の不良ループ表示方法の提供によっ
て上記目的を達成するものである。
That is, the present invention provides a method for displaying a defective minor loop in a magnetic bubble memory in which the address of a defective minor loop is displayed in a predetermined area on the element surface. The above object is achieved by providing a method for displaying a defective loop in a bubble memory device, which is characterized by reducing the defective loop at a given magnification and then displaying the defective loop on the surface of the device.

(6)発明の実施例 第1図と第2図に本発明による不良ループ表示方法の一
実施例を示す。
(6) Embodiment of the Invention FIGS. 1 and 2 show an embodiment of the defective loop display method according to the present invention.

数は180字前後となる。256にビット素子ではマイ
ナーループ数約300ループ、不良ループはせいぜい2
0ループであるから、3桁数字×20=60字となり、
余裕をもって表示できる。1メガビツト素子では、マイ
ナーループ数約600ループ、不良ループが約60本で
あるから、3桁数字X60=180字となりギリギリで
表示できる。ところがバブルメモリ素子は年々高密度化
の研究が進み、4メガビット素子、更には16メガビツ
ト素子の実現が確実視されている。4メガピント素子で
は不良ループが240ループ、更には16メガビツト素
子では1000ループにもなり、また素子の外形寸法は
現在とほぼ変わらないことが予想されるため、従来技術
での印刷による表示では、素子表面に不良ループ番地を
表示することが不可能となる。
The number will be around 180 characters. In 256 bit devices, the number of minor loops is approximately 300, and the number of defective loops is at most 2.
Since it is a 0 loop, 3-digit number x 20 = 60 characters,
Can be displayed with ease. In a 1 megabit device, there are approximately 600 minor loops and approximately 60 defective loops, so 3 digits x 60 = 180 characters, which can barely be displayed. However, research on increasing the density of bubble memory devices is progressing year by year, and it is certain that 4-megabit devices and even 16-megabit devices will be realized. The number of defective loops is 240 in a 4 megabit focus element, and 1000 loops in a 16 megabit element, and it is expected that the external dimensions of the element will remain almost the same as they are now. It becomes impossible to display the defective loop address on the surface.

(4)発明の目的 本発明の目的は従来技術では不可能であった4メガビッ
トあるいは16メガビツトといった高密度素子の不良ル
ープを素子上に表示する新しい手箱1図は露光マスク用
原版を示す平面図で、これは例えばlQcmX12co
+の原版lの上に4龍角の数字等からなる印字2を露光
・現像により形成したものである。
(4) Purpose of the Invention The purpose of the present invention is to display a new method for displaying defective loops on high-density devices such as 4 megabits or 16 megabits on the device, which was impossible with the prior art. 1 Figure is a plan view showing an original plate for an exposure mask. So, this is, for example, lQcmX12co
Prints 2 consisting of 4-dragon digits, etc. are formed on a + original plate 1 by exposure and development.

この原版1の面積には25字×30字−750字が表示
できる。4メガビツト素子では不良ループの最大が24
0ループであるから16進3桁で番地を表わせば720
字となり、本原版内で十分表示することが可能である。
The area of this original plate 1 can display 25 characters x 30 characters - 750 characters. For a 4 megabit device, the maximum number of defective loops is 24.
Since it is a 0 loop, the address can be expressed in 3 hexadecimal digits as 720.
It is possible to display it sufficiently in the original version.

次に第2図(A)に示す如く、原版lを縮小写真技術で
例えば1/4に縮小する。
Next, as shown in FIG. 2(A), the original plate 1 is reduced to, for example, 1/4 using a reduction photographic technique.

尚、第2図(A)において、3は縮小露光機のレンズを
、4は原版1の縮小版を示す。
In FIG. 2(A), 3 indicates a lens of a reduction exposure machine, and 4 indicates a reduction version of the original 1.

また縮小写真技術は湿式、乾式など種々のものが実用化
されているが、そのいずれを用いても本発明の目的が実
現できることはいうまでもない。
Further, various types of reduction photographic techniques such as wet type and dry type have been put into practical use, and it goes without saying that the object of the present invention can be achieved using any of them.

1/4縮小された縮小版4(第2図(B)参照)は2.
5 cm X 3 cmとなり、この版上での印字の大
きさはl u+角となる。
The reduced version 4 (see Figure 2 (B)), which is reduced to 1/4, is 2.
The size of the print on this plate is 5 cm x 3 cm, and the size of the print on this plate is l u + angle.

しかる後、この縮小版4を第2図(C)に示す如く、バ
ブルメモリ素子5の磁気シールドケース6の表面の不良
ループ表示領域7に貼付することによって本発明の目的
が達成できる。
Thereafter, the object of the present invention can be achieved by pasting this reduced version 4 on the defective loop display area 7 on the surface of the magnetic shield case 6 of the bubble memory element 5, as shown in FIG. 2(C).

16メガビツト素子の場合には、原版1を20CmX2
4cmとし、1/8縮小とすれば縮小版4上には0.5
鰭角の印字で1000ループが表示可能である。
In the case of a 16 megabit device, the original plate 1 is 20cm x 2
If it is 4cm and reduced to 1/8, then 0.5 will appear on the reduced version 4.
1000 loops can be displayed by printing the fin angle.

この際0.5 mm角の数字を肉眼で判別するのは困難
であるが、拡大鏡を用いる等の手段により容易に判別す
ることができる。
At this time, it is difficult to distinguish the 0.5 mm square numbers with the naked eye, but they can be easily distinguished by means such as using a magnifying glass.

なお縮小写真技術はバブルメモリ、IC等の作製に使用
せれており、ミクロンオーダーの描画が確立されている
ため、この程度の大きさでは精度的な制限要因とならな
い。
Note that reduction photography technology is used in the production of bubble memories, ICs, etc., and drawing on the micron order has been established, so a size of this order is not a limiting factor for accuracy.

第3図は本発明の別の実施例を示したものである。FIG. 3 shows another embodiment of the invention.

この例では、バブルメモリ素子5の磁気シールドケース
6の不良ループ表示領域7の表面にあらかじめ感光剤を
塗布して感光面を形成しておき、原版1の縮小像を直接
素子5上に表示するようにしたものである。
In this example, a photosensitive agent is applied to the surface of the defective loop display area 7 of the magnetic shield case 6 of the bubble memory element 5 in advance to form a photosensitive surface, and a reduced image of the original plate 1 is directly displayed on the element 5. This is how it was done.

この場合、縮小版を作った後素子に貼付する上記第1実
施例の場合に比べて工数が大幅に低減できる利点がある
In this case, there is an advantage that the number of man-hours can be significantly reduced compared to the case of the first embodiment, in which a reduced version is made and then attached to the element.

なおこの実施例では、感光面保護のため、樹脂コーティ
ング等の保護手段を感光剤の領域7」二に施すことが、
長期間にわたる変質を防く上で望ましい。
In this example, in order to protect the photosensitive surface, protective means such as resin coating is applied to the photosensitive agent area 7''.
Desirable to prevent long-term deterioration.

以上述べた実施例では不良ループだけを表示することに
限ったが、本発明はこれに限定されるものではなく、製
品形式番号、ロット番号等も同時に表示しても良いこと
は言うまでもない。
In the embodiments described above, only defective loops are displayed, but the present invention is not limited to this, and it goes without saying that product type numbers, lot numbers, etc. may also be displayed at the same time.

(7)発明の効果 以上の本発明によれば従来技術では不可能であった4メ
ガビット以上の高密度バブルメモリ素子の不良ループ番
地をバブルメモリ素子上に簡単に且つ精度良く表示する
ことができ、その実用」二の効果は著しいものである。
(7) Effects of the Invention According to the present invention, a defective loop address of a high-density bubble memory element of 4 megabits or more can be easily and precisely displayed on the bubble memory element, which was impossible with the prior art. , its practical effects are remarkable.

【図面の簡単な説明】[Brief explanation of the drawing]

図はいずれも本発明の実施例を示すもので、第1図は本
発明に係る不良ループ表示用原版の平面図、第2図(A
)〜第2図(C)は第1図の原版例による不良ループ表
示方法を示す概念図である。 〔符号の説明〕 1・・・・・原版 2・・・・・印字 3・・・・・縮小用レンズ 4・・・・・縮小版 5・・・・・へ′プルメモリ素子 7・・・・・不良ループ表示領域 第 1 図 躬3 図
The drawings all show examples of the present invention, and Fig. 1 is a plan view of the original plate for indicating a defective loop according to the present invention, and Fig. 2 (A
) to FIG. 2(C) are conceptual diagrams showing a method of displaying defective loops using the original example of FIG. 1. [Explanation of symbols] 1...Original plate 2...Printing 3...Reducing lens 4...Reducing plate 5...Pull memory element 7... ...Bad loop display area Figure 1 Figure 3

Claims (1)

【特許請求の範囲】 (11素子表面の定められた領域に不良マイナーループ
の番地を表示する磁気バブルメモリの不良ループ表示方
法に於いて、予め定められた大きさで印字された不良マ
イナーループ番地を予め定められた倍率で縮小し、しか
る後に素子表面に表示することを特徴とするバブルメモ
リ素子の不良ループ表示方法。 (2)不良マイナーループ番地が予め定められた大きさ
で印字された原版から予め定められた倍率で縮小した縮
小版を作製し、該縮小版を素子表面に貼付することを特
徴とする第1項記載のバブルメモリ素子の不良ループ表
示方法。 (3)素子表面に感光面を形成し、該感光面に不良ルー
プを表示することを特徴とする第1項記載のバブルメモ
リ素子の不良ループ表示方法。 +41 素子表面に保護膜を形成することを特徴とする
第2項又は第3項記載のバブルメモリ素子の不良ループ
表示方法。 (5)、製品、形式番号、ロット番号等を同時に表示す
ることを特徴とする第1項記載のバブルメモリ素子の不
良ループ表示方法。
[Claims] (In a method for displaying defective loops in a magnetic bubble memory in which the address of a defective minor loop is displayed in a predetermined area on the surface of 11 elements, the address of the defective minor loop is printed in a predetermined size. A method for displaying a defective loop in a bubble memory element, which is characterized by reducing the number by a predetermined magnification and then displaying the defective loop on the surface of the element. (2) An original plate on which a defective minor loop address is printed in a predetermined size. The method for displaying a defective loop in a bubble memory element according to item 1, characterized in that a reduced version is produced by reducing the size of the image by a predetermined magnification, and the reduced version is pasted on the element surface. (3) The element surface is exposed to light. +41 The method for displaying defective loops in a bubble memory element according to item 1, characterized in that a surface is formed and a defective loop is displayed on the photosensitive surface. +41 Item 2, characterized in that a protective film is formed on the element surface. or the method for displaying defective loops in bubble memory devices according to item 3. (5) The method for displaying defective loops in bubble memory devices according to item 1, characterized in that the product, model number, lot number, etc. are displayed at the same time.
JP58149821A 1983-08-17 1983-08-17 Displaying method of defective loop of bubble memory element Granted JPS6043291A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58149821A JPS6043291A (en) 1983-08-17 1983-08-17 Displaying method of defective loop of bubble memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58149821A JPS6043291A (en) 1983-08-17 1983-08-17 Displaying method of defective loop of bubble memory element

Publications (2)

Publication Number Publication Date
JPS6043291A true JPS6043291A (en) 1985-03-07
JPS623511B2 JPS623511B2 (en) 1987-01-26

Family

ID=15483431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58149821A Granted JPS6043291A (en) 1983-08-17 1983-08-17 Displaying method of defective loop of bubble memory element

Country Status (1)

Country Link
JP (1) JPS6043291A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01239102A (en) * 1988-03-18 1989-09-25 Mitsubishi Rayon Co Ltd Disposable diaper
JPH0363326U (en) * 1989-10-24 1991-06-20

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54116849A (en) * 1978-03-03 1979-09-11 Hitachi Ltd Magnetic bubble memory chip
JPS5555493A (en) * 1978-10-18 1980-04-23 Hitachi Ltd Magnetic bubble memory device
JPS5590099U (en) * 1978-12-12 1980-06-21

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54116849A (en) * 1978-03-03 1979-09-11 Hitachi Ltd Magnetic bubble memory chip
JPS5555493A (en) * 1978-10-18 1980-04-23 Hitachi Ltd Magnetic bubble memory device
JPS5590099U (en) * 1978-12-12 1980-06-21

Also Published As

Publication number Publication date
JPS623511B2 (en) 1987-01-26

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