JPS604871A - Method for measuring saturated current of semiconductor apparatus - Google Patents

Abstract

PURPOSE:To enable the measurement of a saturated current, by successively measuring the gradient of current-voltage characteristics from a low voltage point while detecting a point where the degree of the gradient reaches a definite amount or less. CONSTITUTION:Voltage pulses corresponding to A1, A2, A3... of a horizontal axis are applied to a semiconductor apparatus to be tested and the gradients DELTAB/DELTAA thereof are successively measured. The gradient is relatively large when voltage is low but gradually lowered as the voltage becomes large. A definite standard is preliminarily provided to the degree of the gradient and a current value at a point where the gradient reaches the standard value or less is set as a saturated current. In this example, the saturated current is B6. By this method, the saturated current of a gun diode, GaAs or FET can be easily measured.

Description

[Detailed description of the invention] The present invention relates to a method for measuring saturation current of a semiconductor device.

The principle of the method for automatically measuring the saturation current of a semiconductor device is that, as shown in the current-voltage characteristic curve diagram in Figure 1, a voltage pulse of voltage A that is sufficiently higher than the saturation point is applied to the semiconductor device under test, and the current B at that time is It can be recognized by displaying . but,
As shown in the current-voltage characteristic curve diagram in Figure 2, in the case of semiconductor devices such as Gunn diodes or GaAs FETs where oscillation Vosc occurs in the saturation current region, the method shown in Figure 1 cannot be measured.

An object of the present invention is to provide a method for measuring the saturation current of a semiconductor device, which is applicable even to semiconductor devices that cause oscillation in the saturation current region.

FIG. 2 is a current-voltage characteristic curve diagram for explaining the present invention in detail. In the figure, the horizontal axis is AI.

Voltage pulses corresponding to A, , A, . . . are applied to the semiconductor device under test, and their slopes, ΔB/ΔAi, are sequentially measured. The slope is relatively large at low voltages, but gradually decreases as the voltage increases. A certain standard is established for the magnitude of this slope, and the current value at the point where the slope becomes less than the standard value is defined as the saturation current.

In the example of FIG. 2, B6 becomes the saturation current.

If the measurement method of the present invention is used, the Gunn diode GaAs
The saturation current of FBT etc. can be easily measured.

[Brief explanation of drawings]

FIG. 1 is a current-voltage characteristic curve diagram of a semiconductor device under test for explaining a conventional saturation current measurement method, and FIG. 2 is a current-voltage characteristic curve of a semiconductor device under test for explaining an embodiment of the present invention. It is a characteristic curve diagram. AI A11 A2. ..., ...applied pulse voltage, B, B,. B2. ..., ...Pulse current due to applied pulse voltage. C 10,000 - Yasushi Figure 1: Pressure - Figure Z

Claims (1)

[Claims] The method is characterized in that the slope of the current-voltage characteristic of the semiconductor device under test is sequentially measured starting from the point with the lowest voltage, and the current value at the point where the magnitude of the slope becomes less than a certain value is taken as the saturation current. Method for measuring saturation current of semiconductor devices.