JPS6050003B2 - Inorganic composition for insulating ceramic paste - Google Patents
Inorganic composition for insulating ceramic pasteInfo
- Publication number
- JPS6050003B2 JPS6050003B2 JP57163495A JP16349582A JPS6050003B2 JP S6050003 B2 JPS6050003 B2 JP S6050003B2 JP 57163495 A JP57163495 A JP 57163495A JP 16349582 A JP16349582 A JP 16349582A JP S6050003 B2 JPS6050003 B2 JP S6050003B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- insulating
- powder
- paste
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000919 ceramic Substances 0.000 title claims description 33
- 239000000203 mixture Substances 0.000 title claims description 32
- 239000011521 glass Substances 0.000 claims description 49
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000000843 powder Substances 0.000 description 40
- 239000010410 layer Substances 0.000 description 36
- 239000004020 conductor Substances 0.000 description 27
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 239000010931 gold Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 12
- 238000007747 plating Methods 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 8
- 239000011247 coating layer Substances 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 238000005187 foaming Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 238000000280 densification Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002241 glass-ceramic Substances 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004017 vitrification Methods 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- 229910002974 CaO–SiO2 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Glass Compositions (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】
本発明は熱処理によつて結晶化しうる絶縁性ガラス粉末
にセラミックス粉末と金属酸化物を混合した組成物てあ
つて、主として、多層厚膜電子回路の絶縁層形成に用い
られる絶縁性セラミックペースト用無機組成物に関する
ものである。Detailed Description of the Invention The present invention is a composition comprising an insulating glass powder that can be crystallized by heat treatment, mixed with a ceramic powder and a metal oxide, and is mainly used for forming an insulating layer of a multilayer thick film electronic circuit. The present invention relates to an inorganic composition for insulating ceramic paste.
従来多層厚膜電子回路等を製造する最も一般的な方法は
、アルミナ等のセラミックス基板に金(Au)、銀(A
g)、白金(Pt)、パラジウム(Pd)、タングステ
ン(W)、モリブデン(Mo)、およびこれらの合金か
らなる導体ペーストを用いて導体回路を印刷し乾燥した
後これを炉に入れて焼成し導体回路を形成したり、ある
いはまたより微細な導体回路を得るためメッキ法により
導体回路を形成し、次にこれら導体回路と第2層導体回
路と絶縁する絶縁層を形成するために絶縁性ガラスペー
ストを塗布し炉に入れて焼成して絶縁層を形成する方法
を用いている。Conventionally, the most common method for manufacturing multilayer thick film electronic circuits, etc. is to deposit gold (Au), silver (A) on a ceramic substrate such as alumina.
g) A conductor circuit is printed using a conductor paste made of platinum (Pt), palladium (Pd), tungsten (W), molybdenum (Mo), and an alloy thereof, and after drying, this is placed in a furnace and fired. In order to form conductor circuits or to obtain finer conductor circuits, conductor circuits are formed by plating, and then insulating glass is used to form an insulating layer that insulates these conductor circuits from the second layer conductor circuit. A method is used in which a paste is applied, placed in a furnace, and fired to form an insulating layer.
この場合、絶縁性ガラスペーストの塗布に際しては、第
1層導体回路と第2層導体回路を結ふ接続孔を残す、必
要がある。次にこの絶縁層面の接続孔に導体ペーストが
つまるように印刷、焼成して第2層導体回路を形成する
。このようにして必要に応じて第3層、第4層の導体回
路および絶縁層を同じ方法で形成し、用途に応じ最上部
層にIC)あるいはu■を接・続するなどして所望の多
層電子回路を実装していた。これら多層厚膜電子回路形
成に必要な絶縁層は、850〜950℃の温度で緻密に
焼結でき、ピンホールが少ないこと、ふくれが出ないこ
と、耐酸、性、(導体回路をメッキ法で形成する場合特
に要求される)。In this case, when applying the insulating glass paste, it is necessary to leave a connection hole connecting the first layer conductor circuit and the second layer conductor circuit. Next, a second layer conductive circuit is formed by printing and firing the conductive paste so that it fills the connection holes on the surface of the insulating layer. In this way, the third and fourth layer conductor circuits and insulating layers are formed using the same method as necessary, and the desired result is achieved by connecting IC) or u■ to the top layer depending on the application. It was equipped with a multilayer electronic circuit. These insulating layers necessary for forming multilayer thick film electronic circuits can be densely sintered at a temperature of 850 to 950°C, have few pinholes, do not bulge, are acid resistant, have good properties (conductor circuits can be formed by plating) (especially required when molding).
高耐電圧、低熱抵抗、低誘電率などの要求を兼ね備えて
いることが強く要望されている。従来こうした目的に用
いられてきた絶縁層形成用の絶縁性ガラスペースト用無
機組成物は、850〜950℃の温度で焼成することに
より結晶化する結晶性ガラスのタイプのものが用いられ
ている(例えば特公昭46−42917号、特公昭51
−86168号、特公昭51−10844号、特公昭5
2−34645号公報等)。しかしながら、前記した従
来の絶縁層形成に用いられている絶縁性ガラスペースト
には一長一短があり、例えば、コンピュータ用ロジック
回路のように多層セラミック基板の高密度実装回路形成
には厚膜印刷法では100μm程度が限界でありそれ以
下の微細なラインを必要とするときはメッキ法が用いら
れることが多い。There is a strong demand for materials that meet the requirements of high withstand voltage, low thermal resistance, and low dielectric constant. The inorganic composition for insulating glass paste for forming an insulating layer that has been conventionally used for this purpose is a crystalline glass type that is crystallized by firing at a temperature of 850 to 950 ° C. ( For example, Special Publication No. 46-42917, Special Publication No. 51
-86168, Special Publication No. 51-10844, Special Publication No. 51
2-34645, etc.). However, the insulating glass paste used in the conventional insulating layer formation mentioned above has its advantages and disadvantages. Plating is often used when there is a limit and a finer line is required.
これらメッキ法によつて形成した導体回路上に前記の方
法で絶縁層を形成した場合、導体回路上の絶縁被覆層に
ふくれが発生して次の導体回路形成が不能になつたりす
る。またふくれが発生しなくともピンホールが多かつた
り、耐酸性が不十分であつたり、形成導体との密着性が
小さかつたり、熱抵抗が大きいなどの問題があつた。こ
のため高密度実装セラミック多層厚膜電子回路形成に用
いられる絶縁層形成用の優れた絶縁性セラミックペース
ト用無機組成物の開発が要請されている。本発明の目的
は、これら問題点を除去した、すなわち、特にメッキ法
による導体回路上の絶縁層のふくれの発生がなく、導体
との密着性および緻密化に優れ、ピンホールが少なく、
熱抵抗が小さく、耐酸性にすぐれた絶縁性セラミックペ
ースト用の無機組成物を提供することにある。When an insulating layer is formed by the above method on a conductor circuit formed by these plating methods, the insulating coating layer on the conductor circuit may blister, making it impossible to form the next conductor circuit. Further, even if no blistering occurs, there are problems such as a large number of pinholes, insufficient acid resistance, poor adhesion to the formed conductor, and high thermal resistance. Therefore, there is a need to develop an inorganic composition for an excellent insulating ceramic paste for forming an insulating layer used in forming a high-density packaging ceramic multilayer thick film electronic circuit. The purpose of the present invention is to eliminate these problems, that is, there is no blistering of the insulating layer on the conductor circuit due to the plating method, excellent adhesion and densification with the conductor, fewer pinholes, and
An object of the present invention is to provide an inorganic composition for an insulating ceramic paste that has low thermal resistance and excellent acid resistance.
本発明は、重量%表示で、
SlO24O〜65%(好ましくは45〜60%)Pb
O5〜20%( 〃 8〜18%)B.O33〜15
%( 〃 5〜10%)CaO2〜13%( 〃
4〜12%)MgOO.2〜10%( 〃0.4〜8
%)BaOO.2〜10%( 〃0.3〜8%)Na
2Ol〜5%( 〃 2〜4%)K2Ol〜5%(
〃 1〜4%)
ZrO2O.5〜15%( 〃 1〜10%)を合計
100%となるようにした組成を有し、しかもこれらの
酸化物のうちMgOを含むアルカリ土類金属酸化物の和
が6〜15%の範囲である組成を有し、1000℃以下
の温度で熱処理することにより結晶化し得るガラス材料
とAI2O3,MgO・A]203,A1。In the present invention, in weight percent, SlO24O to 65% (preferably 45 to 60%) Pb
O5-20% (〃 8-18%)B. O33-15
% ( 〃 5-10%) CaO2-13% ( 〃
4-12%) MgOO. 2-10% (〃0.4-8
%) BaOO. 2-10% (〃0.3-8%) Na
2Ol ~ 5% ( 〃 2 ~ 4%) K2Ol ~ 5% (
(1-4%) ZrO2O. 5 to 15% (〃 1 to 10%) for a total of 100%, and among these oxides, the sum of alkaline earth metal oxides including MgO is in the range of 6 to 15%. A glass material having a composition that can be crystallized by heat treatment at a temperature of 1000° C. or lower and AI2O3, MgO.A]203,A1.
へ・SlO2,3Al。O3・SiO2,zrO2から
なる群より選ばれた少なくとも1種以上のセラミックス
材料を重量%で20〜60%の範囲で含む組成を有する
ことを特徴とする絶縁性セラミックペースト用無機組成
物を得る。このような本発明の絶縁性セラミックペース
ト用無機組成物は、例えば次のような材料および方ノ法
によつて製造し得る。すなわちガラスの調整に当つては
、目標組成になるように各成分の原料を秤量してバッチ
を調整し、このバッチを1400〜1500℃で1〜3
時間加熱して熔解しガラス化する。熔解ガラスを水冷し
、または厚い鉄板上に流しフレーク状に形成し得られた
ガラス片をアルミナボールミルなどで微粉末し、平均粒
径0.5〜4μmのガラス粉末を得る。またセラミック
ス粉末は平均粒径0.3〜5μm微粉末が適当である。
前記方法で得られたガラス粉末に前記セラミックス粉末
を20〜6鍾量%配合し、アルミナボールで1〜3時間
湿式混合するなどしてガラス粉末とセラミックス粉末と
の均質な混合粉末、すなわち本発明の絶縁性セラミック
ペースト用無機組成物を得る。なおこの際用いられる原
料粉末は明確化のため酸化物に換算表記したが、鉱物、
酸化物、炭酸塩、水酸化物などの形て通常の方法により
使用されるのは勿論である。to SlO2,3Al. An inorganic composition for an insulating ceramic paste is obtained, which has a composition containing at least one ceramic material selected from the group consisting of O3.SiO2 and zrO2 in a range of 20 to 60% by weight. Such an inorganic composition for an insulating ceramic paste of the present invention can be manufactured using, for example, the following materials and methods. In other words, when preparing glass, prepare a batch by weighing the raw materials for each component so that it has the target composition, and then heat this batch at 1400 to 1500°C for 1 to 3 hours.
Heat for a period of time to melt and vitrify. The molten glass is cooled with water or poured onto a thick iron plate to form flakes, and the resulting glass pieces are pulverized using an alumina ball mill or the like to obtain glass powder with an average particle size of 0.5 to 4 μm. Further, the ceramic powder is suitably a fine powder having an average particle size of 0.3 to 5 μm.
A homogeneous mixed powder of glass powder and ceramic powder, that is, the present invention, is obtained by adding 20 to 6 weight percent of the ceramic powder to the glass powder obtained by the above method and wet-mixing it with an alumina ball for 1 to 3 hours. An inorganic composition for insulating ceramic paste is obtained. The raw material powder used in this case is expressed in terms of oxides for clarity, but minerals,
Of course, they can be used in the form of oxides, carbonates, hydroxides, etc. by conventional methods.
かくして得られた本発明の粉末状無機組成物にビヒクル
を添加混合しで例えば三本ロールミル等を用いて十分混
練し、均一に分散させて印刷に適した粘度を有する絶縁
性セラミックペーストを得る。A vehicle is added to the thus obtained powdered inorganic composition of the present invention, and the mixture is thoroughly kneaded using, for example, a three-roll mill to uniformly disperse the composition to obtain an insulating ceramic paste having a viscosity suitable for printing.
なお本発明においてビヒクルの成分については何ら限定
を要しない。バインダーとしてはエチルセルロース、ポ
リビニルブチラールなどの通常用いられているもので十
分であり、溶媒を用いて5〜15重量%溶液とすると好
都合である。溶媒としては、βまたはαテルピオネール
、n−ブチルカルビトール、ブチルカルビトールアセテ
ート、エチルカルビトールアセテートなどを単独または
2種以上混合して用いるとよい。次に本発明において絶
縁性セラミックペースト用無機組成物のガラス粉末とセ
ラミックス粉末との配合比、ガラス粉末の組成について
各々の範囲を特許請求の範囲に記した如く限定した理由
について述べる。In the present invention, there are no limitations on the components of the vehicle. As the binder, commonly used binders such as ethyl cellulose and polyvinyl butyral are sufficient, and it is convenient to form a 5 to 15% by weight solution using a solvent. As the solvent, β or α terpionel, n-butyl carbitol, butyl carbitol acetate, ethyl carbitol acetate, etc. may be used alone or in combination of two or more. Next, in the present invention, the reason why the blending ratio of the glass powder and the ceramic powder of the inorganic composition for an insulating ceramic paste and the composition of the glass powder are limited as described in the claims will be explained.
まず、本発明に係る絶縁セラミックペースト用無機組成
物の主成分の主成分の一つであるガラス粉末の組成につ
いて述べれば、SiO2は、ガラスのネツトワークフオ
ーマーであり、本発明のガラスを焼成熱処理し結晶化し
たとき析出するケイカイ石(CaO−SiO2)結晶を
構成する成分である。First, to describe the composition of the glass powder, which is one of the main components of the inorganic composition for an insulating ceramic paste according to the present invention, SiO2 is a network former of glass, and the glass of the present invention is fired. It is a component constituting silicoite (CaO-SiO2) crystals that precipitate when heat treated and crystallized.
SiO2〈40%ではガラスの軟化点が低くなり過ぎ、
熱処理時結晶化する前にガラスが軟化し流動し過ぎる。
SiO2〉65%では、ガラス化が困難であると共に、
結晶化のための熱処理温度が1000℃を超える高温が
必要となる。At SiO2 <40%, the softening point of the glass becomes too low,
During heat treatment, the glass softens and becomes too fluid before it crystallizes.
At SiO2〉65%, vitrification is difficult, and
A high heat treatment temperature exceeding 1000° C. is required for crystallization.
CaOもまた析出するケイカイ石結晶を構成する成分で
ある。CaOく2%では、ケイカイ石の析出する量が少
なく、高密度実装セラミック多層厚膜電子回路のメッキ
法による導体回路上に形成した絶縁被覆層にふくれが発
生して好ましくない。CaO〉13%では、耐酸性が低
下すると共にガラスが熔解時失透し易くなる。PbOお
よびB2O3は、ガラスの熔解時のフラックスとして用
いられる。PlO〈5%,B2O3く3%では、ガラス
の熔解性が悪くなる。PbO〉20%,B2O3〉12
%では、ガラスの軟化点が低くなり過ぎ、熱処理時、結
晶化する前に軟化流動を起し、ファインパターンの絶縁
被覆層の焼結形成が困難となる。BaO及びMgOは、
ガラスの熔解性を向上させうる。CaO is also a component constituting the precipitated silicoite crystals. At 2% CaO, the amount of precipitated silicicite is small and blistering occurs in the insulating coating layer formed on the conductor circuit by the plating method for high-density mounting ceramic multilayer thick film electronic circuits, which is not preferable. When CaO>13%, the acid resistance decreases and the glass tends to devitrify when melted. PbO and B2O3 are used as a flux when melting glass. When PlO is 5% and B2O3 is 3%, the solubility of the glass deteriorates. PbO〉20%, B2O3〉12
%, the softening point of the glass becomes too low, causing softening flow before crystallization during heat treatment, making it difficult to sinter and form an insulating coating layer with a fine pattern. BaO and MgO are
It can improve the solubility of glass.
また絶縁層形成の際の再加熱によつてガラスの結晶化さ
せるのに寄与すると共に緻密化に効果がある。BaO<
0.2%,MgO<0.2%では上記効果は小さい。B
aO〉10%,MgO>10%では、ガラスの熱膨脹係
数が大きくなり過ぎたり、結晶化のための熱処理温度が
高くなり過ぎる。CaO+MgO+BaO〈6%ではガ
ラスの結晶化が不十分でメッキ法による導体回路上に形
成した絶縁層にふくれが発生する。CaO+MgO+B
aO〉15%では、耐酸性が低下して好ましくない。ま
た緻密性を阻害する。Na2OおよびK2Oは、ガラス
の熔解性を向上させうる。Furthermore, reheating during the formation of the insulating layer contributes to crystallization of the glass and is effective in densification. BaO<
0.2% and MgO<0.2%, the above effect is small. B
If aO>10% and MgO>10%, the thermal expansion coefficient of the glass becomes too large or the heat treatment temperature for crystallization becomes too high. When CaO+MgO+BaO<6%, glass crystallization is insufficient and blistering occurs in the insulating layer formed on the conductor circuit by plating. CaO+MgO+B
When aO>15%, the acid resistance decreases, which is not preferable. It also inhibits denseness. Na2O and K2O can improve the solubility of glass.
またガラスの軟化点を適度に制御するが限定範囲以下て
は、その効果はなく、限定範囲を超えれば耐酸性が劣化
し好ましくない。ZrO2は、ガラスの結晶化を制御す
るために含有される。Further, although the softening point of the glass is appropriately controlled, if the softening point is below a limited range, there is no effect, and if it exceeds the limited range, the acid resistance deteriorates, which is not preferable. ZrO2 is included to control crystallization of the glass.
ZrO2〈0.5%では、十分な結晶化が得られない。
ZrO2〉15%では、ガラスが熔解時失透し易くガラ
ス化が困難となり好ましくない。絶縁性セラミックペー
スト用無機組成物のもう一つの主成分であるセラミック
ス粉末を前記ガラス粉末に置換して配合することにより
、ガラス粉末とセラミックス粉末とからなる組成物の熱
処理時の結晶化の促進、結晶化後の残留ガラスによる流
動性及び絶縁層表面の発泡の抑制、あるいは熱抵抗の低
下、耐酸性、緻密化などの効果を与えることができる。
ガラス粉末に置換して配合するセラミックス粉末を重量
比で20%以下とすると、絶縁層は緻密であるが、表面
は発泡し易くなつたり、導体との密着性が低下したり、
熱抵抗がより大きくなつたりして好ましくない。また6
0%を超えれば、850〜1000℃の比較的低い温度
では緻密な絶縁層は得られず、ピンホールが増加して絶
縁性が低下する。なおセラミックス粉末としては、前記
の如く種々あるが、このうち、アルミナ(Al2O3)
は熱伝導率の高い物質であり、これをセラミックス粉末
として用いると、形成された絶縁層の熱伝導率は、ガラ
ス単体層に比較し2〜4倍の大きさとなる。With ZrO2 <0.5%, sufficient crystallization cannot be obtained.
If ZrO2>15%, the glass tends to devitrify when melted, making vitrification difficult, which is not preferable. By replacing the ceramic powder, which is another main component of the inorganic composition for an insulating ceramic paste, with the glass powder, it is possible to promote crystallization during heat treatment of the composition consisting of the glass powder and the ceramic powder. It is possible to provide effects such as fluidity caused by residual glass after crystallization, suppression of foaming on the surface of the insulating layer, reduction of thermal resistance, acid resistance, and densification.
If the ceramic powder added in place of the glass powder is less than 20% by weight, the insulating layer will be dense, but the surface will become more prone to foaming, and the adhesion with the conductor will deteriorate.
This is not preferable because the thermal resistance becomes larger. Also 6
If it exceeds 0%, a dense insulating layer cannot be obtained at a relatively low temperature of 850 to 1000° C., and the number of pinholes increases and the insulation properties deteriorate. There are various types of ceramic powder as mentioned above, but among them, alumina (Al2O3)
is a substance with high thermal conductivity, and when this is used as a ceramic powder, the thermal conductivity of the formed insulating layer will be 2 to 4 times as large as that of a single glass layer.
特に、多層厚膜回路の高密度化に伴い、必然的に放熱性
の大きい無機絶縁層が要求され、その意味においてアル
ミナの使用が好ましい。以下本発明の実施例を挙げ、そ
れに基いて詳細に説明する。In particular, as the density of multilayer thick film circuits increases, an inorganic insulating layer with high heat dissipation properties is inevitably required, and in this sense, it is preferable to use alumina. EXAMPLES The present invention will be described in detail below based on examples.
実施例1
Sj0256.07重量%(以下単に%と表記)、B2
O36.8%,PbOl6.6%,Na2O2.37%
,K2O2.l7%,MgO4.88%,CaO5.4
%,BaOO.2l%,ZrO25.5%の組成を有す
るガラス粉末を前記方法により製造し、更にアルミナボ
ールミルを用いア・ルコールを分散媒として■時間湿式
粉砕した。Example 1 Sj0256.07% by weight (hereinafter simply expressed as %), B2
O36.8%, PbOl6.6%, Na2O2.37%
, K2O2. l7%, MgO4.88%, CaO5.4
%, BaOO. A glass powder having a composition of 21% and 5.5% of ZrO was produced by the above method, and further wet-pulverized for 1 hour using an alumina ball mill and alcohol as a dispersion medium.
これを篩で整粒した後アルコールを乾燥させ平均粒径0
.91P7T1,の粒度を持つガラス粉末を得た。セラ
ミックス粉末は平均粒径1.5μmの粒度のアルミナ粉
末を用いた。ガラス粉末とセラミックス粉末フと配合比
率はガラス粉末48%、セラミックス粉末52%とした
。各々の粉末を所定量秤量し、アルミナボールミルで分
散媒としてアルコールを用い3時間混合した後、アルコ
ールを乾燥させ均質なガラスセラミックス混合粉末を得
た。ビヒクルは、エチルセルロース5%溶液として溶媒
にα−テルピネオールを用いた。ビヒクル30%、ガラ
スセラミックス混合粉末70%を三本ロールミルを用い
て十分混練し粉末をビヒクルに均一に分散させペースト
化した。得られた絶縁性セラミックペーストの評価には
、50×50×0.87Tgnt96%Al2O湛板に
Auをメッキ法でメタライズして下部動極としこの上に
本発明に調製した絶縁セラミックペーストをスクリーン
で塗布乾燥した後、930℃で、1扮間電気炉で焼結し
たものを用いた。After sifting this with a sieve and drying it with alcohol, the average particle size is 0.
.. A glass powder with a particle size of 91P7T1 was obtained. As the ceramic powder, alumina powder having an average particle size of 1.5 μm was used. The blending ratio of glass powder and ceramic powder was 48% glass powder and 52% ceramic powder. A predetermined amount of each powder was weighed and mixed in an alumina ball mill for 3 hours using alcohol as a dispersion medium, and then the alcohol was dried to obtain a homogeneous glass-ceramic mixed powder. The vehicle was a 5% solution of ethyl cellulose and α-terpineol was used as the solvent. 30% vehicle and 70% glass-ceramic mixed powder were thoroughly kneaded using a three-roll mill, and the powder was uniformly dispersed in the vehicle to form a paste. To evaluate the obtained insulating ceramic paste, a 50×50×0.87 Tgnt96% Al2O-filled plate was metalized with Au using a plating method to form a lower moving electrode, and the insulating ceramic paste prepared according to the present invention was placed on top of this by a screen. After coating and drying, the material was sintered in an electric furnace at 930° C. for one hour.
焼結時の雰囲気は空気中で、焼結サイクル(昇温、ピー
ク温度、降温、炉外取り出し)は6紛であつた。絶縁性
セラミックペースト塗布乾燥、焼結を2度繰り返し膜厚
40μmの絶縁層を得た。得られた絶縁層の表面にAu
ペーストを塗布乾燥し930゜Cで8分間焼成して上部
電極とした。これを1MHzで測定した。The atmosphere during sintering was air, and the sintering cycle (temperature increase, peak temperature, temperature decrease, removal from the furnace) was 6 times. Application of the insulating ceramic paste, drying, and sintering were repeated twice to obtain an insulating layer with a thickness of 40 μm. Au on the surface of the obtained insulating layer
The paste was applied, dried, and baked at 930°C for 8 minutes to form an upper electrode. This was measured at 1 MHz.
誘電率は8.4.誘電損失は0.0018、絶縁抵抗は
2×1014ΩG(AtlOOVDC)であつた。ピン
ホールの測定は、絶縁層中を流れる微弱なリーク電流を
測定するとピンホールが多い場合リーク電流が増加し、
逆にピンホールが少ない場合リーク電流は減少すること
を利用した。The dielectric constant is 8.4. The dielectric loss was 0.0018, and the insulation resistance was 2×10 14 ΩG (AtlOOVDC). When pinholes are measured, the weak leakage current flowing through the insulating layer is measured. If there are many pinholes, the leakage current increases.
Conversely, we took advantage of the fact that the leakage current decreases when there are fewer pinholes.
方法は先ず、前記した本実施と同じ条件でAl2O3基
板上に導体(Au)をメタライズしその上に絶縁層の膜
厚40μmを形成し、メタライズの一部を電極とする。
これをNaCl5%水溶液(電解液)に浸漬し、もう片
方の電極は銅板にし同水溶液に浸し直流電圧(DC)1
0Vを印加してリーク電流を測定し.た。リーク電流は
5μAであつた。メッキ導体(Au)との密着性の評価
は、Al2O3基板上に本実施と同じ条件て絶縁層の膜
厚40pmを形成しその上にメッキ法によるAu電極4
×4顛を複数個形成した。First, a conductor (Au) is metallized on an Al2O3 substrate under the same conditions as in the present embodiment described above, and an insulating layer with a thickness of 40 μm is formed thereon, and a part of the metallization is used as an electrode.
This was immersed in a 5% NaCl aqueous solution (electrolyte solution), and the other electrode was a copper plate, immersed in the same aqueous solution, and a direct current voltage (DC) of 1
Apply 0V and measure the leakage current. Ta. The leakage current was 5 μA. To evaluate the adhesion with the plated conductor (Au), an insulating layer with a thickness of 40 pm was formed on the Al2O3 substrate under the same conditions as in this experiment, and an Au electrode 4 was formed on it by plating.
A plurality of ×4 frames were formed.
この電極上に銅製のコアこ(ネジ付)をIn/Pbハン
ダで接着しこのコアにネジ付フックをネジ込んで引張り
試験機で密着強度を測定した。平均密着強度は2.5k
9/T!dであつた。ビヒクルの入らない上記ガラスセ
ラミックス粉ク末を800k9/c#Iで加圧成形しこ
れを電気炉で930℃−1紛間焼結して直径20TWL
厚さ1?の焼結体を得た。A copper core (with screws) was bonded onto this electrode using In/Pb solder, a screw hook was screwed into the core, and the adhesion strength was measured using a tensile tester. Average adhesion strength is 2.5k
9/T! It was d. The vehicle-free glass-ceramic powder was pressure-molded at 800k9/c#I and sintered at 930℃-1 in an electric furnace to a diameter of 20TWL.
Thickness 1? A sintered body was obtained.
これを測定し、熱伝導率0.0058Ca1/c!n・
Sec・℃の値を得た。また前記、メッキによるAu導
体上に形成した絶縁被膜層の発泡およびふくれは発生し
なかつた。実施例2
S10259.4%,八038.48%,PbOlO.
O%,Na2O2.4%,K2O2.2%,MgO6.
4%,CaO5.4%,BaOO.22%,ZrO25
.5%の組成のガラスを平均粒径1.2μmの粉末粒度
に調製したものを46%と平均粒径2.3μmのアルミ
ナ粉末54%とを実施例1と同じ方法、同じ条件で混合
、乾燥、ペースト化)し、絶縁層を形成して諸特性を測
定した。This was measured and the thermal conductivity was 0.0058Ca1/c! n・
The value of Sec·°C was obtained. Furthermore, no foaming or blistering occurred in the insulating coating layer formed on the Au conductor by plating. Example 2 S10259.4%, 8038.48%, PbOlO.
O%, Na2O2.4%, K2O2.2%, MgO6.
4%, CaO5.4%, BaOO. 22%, ZrO25
.. 46% of glass with a composition of 5% prepared into powder particles with an average particle size of 1.2 μm and 54% of alumina powder with an average particle size of 2.3 μm were mixed and dried in the same manner and under the same conditions as in Example 1. , paste), an insulating layer was formed, and various properties were measured.
その結果、誘電率8.5.誘電損失0.0012、絶縁
抵抗3×1014ΩC7X(AtlOOVDC)、リー
ク電流10μA、密着強度2.9k9/Tnltl熱伝
導率0.0065Ca1/0−Sec・℃であつた。ま
た絶縁被膜層の発泡およびふくれはなかつた。実施例3
Sj0252.3%,B.O38.8%,PbOl6.
6%,Na2O2.37%,K2O2.O7%,MgO
O.4l%,BaO6.l%,CaO5.4%,ZrO
25.95%の組成のガラスを常法で製造した平均粒径
0.79μ瓦のガラス粉末50%と平均粒径3.0μ丸
のアルミナ粉末50%とを配合し、これを実施例1と同
じ方法、同じ条件て混合、乾燥、ペースト化して、絶縁
層の形成を行ない諸特性を測定した。As a result, the dielectric constant was 8.5. The dielectric loss was 0.0012, the insulation resistance was 3×10 14 ΩC7X (AtlOOVDC), the leakage current was 10 μA, the adhesion strength was 2.9 k9/Tnltl, and the thermal conductivity was 0.0065 Ca1/0-Sec·°C. Further, there was no foaming or blistering of the insulating coating layer. Example 3
Sj0252.3%, B. O38.8%, PbOl6.
6%, Na2O2.37%, K2O2. O7%, MgO
O. 4l%, BaO6. 1%, CaO5.4%, ZrO
Example 1 was prepared by blending 50% glass powder with an average particle size of 0.79 μm and 50% alumina powder with an average particle size of 3.0 μm, which was produced by a conventional method using glass with a composition of 25.95%. They were mixed, dried, and made into a paste using the same method and under the same conditions to form an insulating layer and measure various properties.
その結果、誘電率8.&誘電損失0.0025、絶縁抵
抗4刈014ΩCm(AtlOOVDC)、リーク電流
旬μA、密着強度3.0kg/i1熱伝導率0.005
ぎAI/〔・Sec・℃であつた。As a result, the dielectric constant was 8. & Dielectric loss 0.0025, insulation resistance 014ΩCm (AtlOOVDC), leakage current μA, adhesion strength 3.0kg/i1 thermal conductivity 0.005
The temperature was AI/[・Sec・℃.
またメッキ導体(Au)上の絶縁被膜層の発泡およびふ
くれは認められなかつた。比較例1
S10261.34%,B,O36.8%,PbOl6
.6%,Na2O2.37%,K2O2.l7%,Mg
OO.4l%,CaO5.3%,BaOO.2l%,T
lO2l.2%,ZrO23.6%の組成のガラスを常
法で製造した平均粒径0.98PTrL,のガラス粉末
43%と平均粒径2.3μmのアルミナ粉末52%とを
配合し、これを実施例1と同じ方法、同じ条件で混合、
乾燥、ペースト化して絶縁層を形成し諸特性を測定した
。Further, no foaming or blistering of the insulating coating layer on the plated conductor (Au) was observed. Comparative example 1 S10261.34%, B, O36.8%, PbOl6
.. 6%, Na2O2.37%, K2O2. l7%, Mg
OO. 4l%, CaO5.3%, BaOO. 2l%, T
lO2l. 2% ZrO2 and 3.6% ZrO were mixed with 43% glass powder with an average particle size of 0.98 PTrL and 52% alumina powder with an average particle size of 2.3 μm, which was prepared by a conventional method. Mix in the same way and under the same conditions as 1.
It was dried and made into a paste to form an insulating layer, and various properties were measured.
その結果、誘電率8.7、誘電損失0.0045、絶縁
抵抗2.5×1013ΩCln(AtlOOVDC)、
リーク電流50μA1密着強度1.8k9/i1熱伝導
率0.0041Ca1/d−Sec・℃であつた。As a result, dielectric constant 8.7, dielectric loss 0.0045, insulation resistance 2.5×1013ΩCln (AtlOOVDC),
The leakage current was 50 μA, the adhesion strength was 1.8 k9/i, and the thermal conductivity was 0.0041 Ca1/d-Sec·°C.
またメッキ導体(Au)上の絶縁層に発泡およびふくれ
が多数発生した。比較例2従来、厚膜積層用絶縁ペース
トは無機物に結晶化ガラスが用いられていた。Further, many bubbles and blisters occurred in the insulating layer on the plated conductor (Au). Comparative Example 2 Conventionally, crystallized glass has been used as an inorganic material in an insulating paste for thick film lamination.
例えばSjO253%,A]2033%,Ll2Ol7
%,MgOl2%,ZrO28.4%,P2O,ll.
9%の組成比のガラス粉末のみである。これを実施例1
の方法、条件でペースト化し、塗布、焼結して絶縁層を
形成し、諸特性を測定した。その結果、絶縁抵抗2×1
CPΩ01熱伝導率0.0022Ca1/Cm−Sec
・℃、リーク電流1200pA1密着強度0.45k9
/iであつた。For example, SjO253%, A]2033%, Ll2Ol7
%, MgOl2%, ZrO28.4%, P2O, ll.
It consists only of glass powder with a composition ratio of 9%. Example 1
The paste was made into a paste using the method and conditions described above, applied, and sintered to form an insulating layer, and various properties were measured. As a result, the insulation resistance is 2×1
CPΩ01 Thermal conductivity 0.0022Ca1/Cm-Sec
・°C, leakage current 1200pA1 adhesion strength 0.45k9
It was /i.
またメッキ導体(Au)上の絶縁被膜層は発泡及びふく
れが無数発生した。以上説明したように本発明の絶縁性
セラミックペースト用無機組成物を用いた結果は、従来
の結晶化ガラス系の絶縁ペーストに比べ、メッキ導体(
Au)上の絶縁被膜層の発泡およびふくれの発生がなく
、また絶縁層の緻密性、密着性、熱伝導率が優れた絶縁
ペーストの提供が可能となり、厚膜多層電子回路の実装
の高密度化、信頼性の向上に寄与することができる。In addition, numerous bubbles and blisters occurred in the insulating coating layer on the plated conductor (Au). As explained above, the results of using the inorganic composition for insulating ceramic paste of the present invention show that the inorganic composition for plated conductors (
It is now possible to provide an insulating paste that does not cause foaming or blistering of the insulating coating layer on the Au) and has excellent density, adhesion, and thermal conductivity of the insulating layer, allowing for high-density packaging of thick-film multilayer electronic circuits. This can contribute to improving reliability.
Claims (1)
3〜12%CaO2〜13%MgO0.2〜10%Ba
O0.2〜10%Na_2O1〜5%K_2O1〜5%
ZrO_20.5〜15% を合計100%となるようにした組成を有し、しかもこ
れらの酸化物のうちMgOを含むアルカリ土類金属酸化
物の和が6〜15%の範囲の組成を有するガラス材料を
重量%で40〜80%とAl_2O_3、MgO・Al
_2O_3、Al_2O_3、SiO_2、3Al_2
O_3・SiO_2、ZrO_2からなる群より選ばれ
た1種以上のセラミックス材料を重量%で20〜60%
の範囲で含む組成を有することを特徴とする絶縁性セラ
ミックペースト用無機組成物。 2 ガラス材料は1000℃以下の温度で熱処理するこ
とにより結晶化しうるガラス材料である特許請求の範囲
第1項記載の絶縁性セラミックペースト用無機組成物。[Claims] 1 SiO_240-65% PbO5-20% B_2O_3 in weight%
3-12%CaO2-13%MgO0.2-10%Ba
O0.2~10% Na_2O1~5% K_2O1~5%
A glass having a composition in which the total of ZrO_20.5 to 15% is 100%, and among these oxides, the sum of alkaline earth metal oxides including MgO is in the range of 6 to 15%. Materials are 40-80% by weight and Al_2O_3, MgO・Al
_2O_3, Al_2O_3, SiO_2, 3Al_2
20 to 60% by weight of one or more ceramic materials selected from the group consisting of O_3, SiO_2, and ZrO_2
An inorganic composition for an insulating ceramic paste, characterized by having a composition within the range of. 2. The inorganic composition for an insulating ceramic paste according to claim 1, wherein the glass material is a glass material that can be crystallized by heat treatment at a temperature of 1000° C. or lower.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57163495A JPS6050003B2 (en) | 1982-09-20 | 1982-09-20 | Inorganic composition for insulating ceramic paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57163495A JPS6050003B2 (en) | 1982-09-20 | 1982-09-20 | Inorganic composition for insulating ceramic paste |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5954106A JPS5954106A (en) | 1984-03-28 |
| JPS6050003B2 true JPS6050003B2 (en) | 1985-11-06 |
Family
ID=15774947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57163495A Expired JPS6050003B2 (en) | 1982-09-20 | 1982-09-20 | Inorganic composition for insulating ceramic paste |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6050003B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6252005U (en) * | 1985-09-20 | 1987-03-31 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5821181A (en) * | 1996-04-08 | 1998-10-13 | Motorola Inc. | Ceramic composition |
| JP3680683B2 (en) * | 2000-03-06 | 2005-08-10 | 株式会社村田製作所 | Insulator porcelain composition |
-
1982
- 1982-09-20 JP JP57163495A patent/JPS6050003B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6252005U (en) * | 1985-09-20 | 1987-03-31 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5954106A (en) | 1984-03-28 |
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