JPS6050419A - サ−マル質量流量計 - Google Patents

サ−マル質量流量計

Info

Publication number: JPS6050419A
Authority: JP; Japan
Prior art keywords: substrate; channel; flow; thermal mass; sensor
Prior art date: 1983-08-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP58203752A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0342616B2 (2

Inventor

ウエイン　ジー．レンキン

ダン　ビー．ルメイ

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

INOBASU

Original Assignee

INOBASU

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-08-26

Filing date

1983-11-01

Publication date

1985-03-20

1983-11-01 Application filed by INOBASU filed Critical INOBASU

1985-03-20 Publication of JPS6050419A publication Critical patent/JPS6050419A/ja

1991-06-27 Publication of JPH0342616B2 publication Critical patent/JPH0342616B2/ja

Status Granted legal-status Critical Current

Links

239000000758 substrate Substances 0.000 claims description 70
239000012530 fluid Substances 0.000 claims description 44
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
238000000034 method Methods 0.000 claims description 16
238000005530 etching Methods 0.000 claims description 13
239000000463 material Substances 0.000 claims description 11
229910052759 nickel Inorganic materials 0.000 claims description 10
238000010438 heat treatment Methods 0.000 claims description 9
239000010703 silicon Substances 0.000 claims description 9
229910052710 silicon Inorganic materials 0.000 claims description 9
238000000151 deposition Methods 0.000 claims description 7
238000004519 manufacturing process Methods 0.000 claims description 4
238000012937 correction Methods 0.000 claims description 3
238000005520 cutting process Methods 0.000 claims description 2
238000012544 monitoring process Methods 0.000 claims description 2
238000002161 passivation Methods 0.000 claims 1
238000007789 sealing Methods 0.000 claims 1
150000003377 silicon compounds Chemical group 0.000 claims 1
239000000126 substance Substances 0.000 claims 1
239000007789 gas Substances 0.000 description 24
238000011144 upstream manufacturing Methods 0.000 description 11
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
230000004044 response Effects 0.000 description 10
238000012546 transfer Methods 0.000 description 9
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
230000006870 function Effects 0.000 description 7
229910052581 Si3N4 Inorganic materials 0.000 description 6
239000000203 mixture Substances 0.000 description 6
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
230000008859 change Effects 0.000 description 5
238000005229 chemical vapour deposition Methods 0.000 description 5
230000008569 process Effects 0.000 description 5
230000000694 effects Effects 0.000 description 4
239000010410 layer Substances 0.000 description 4
239000004065 semiconductor Substances 0.000 description 4
235000012239 silicon dioxide Nutrition 0.000 description 4
239000000377 silicon dioxide Substances 0.000 description 4
235000012431 wafers Nutrition 0.000 description 4
238000011109 contamination Methods 0.000 description 3
238000001514 detection method Methods 0.000 description 3
229920002120 photoresistant polymer Polymers 0.000 description 3
238000005070 sampling Methods 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
229910000792 Monel Inorganic materials 0.000 description 2
239000000654 additive Substances 0.000 description 2
230000000996 additive effect Effects 0.000 description 2
238000010276 construction Methods 0.000 description 2
230000001419 dependent effect Effects 0.000 description 2
239000010408 film Substances 0.000 description 2
238000007689 inspection Methods 0.000 description 2
239000007788 liquid Substances 0.000 description 2
238000005259 measurement Methods 0.000 description 2
239000012528 membrane Substances 0.000 description 2
229910052751 metal Inorganic materials 0.000 description 2
239000002184 metal Substances 0.000 description 2
229910001120 nichrome Inorganic materials 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
239000002245 particle Substances 0.000 description 2
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
238000012545 processing Methods 0.000 description 2
230000035945 sensitivity Effects 0.000 description 2
229910052814 silicon oxide Inorganic materials 0.000 description 2
229910001220 stainless steel Inorganic materials 0.000 description 2
239000010935 stainless steel Substances 0.000 description 2
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
XOJVVFBFDXDTEG-UHFFFAOYSA-N Norphytane Natural products CC(C)CCCC(C)CCCC(C)CCCC(C)C XOJVVFBFDXDTEG-UHFFFAOYSA-N 0.000 description 1
239000004642 Polyimide Substances 0.000 description 1
239000004809 Teflon Substances 0.000 description 1
229920006362 Teflon® Polymers 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
238000005452 bending Methods 0.000 description 1
238000003486 chemical etching Methods 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 1
229910052804 chromium Inorganic materials 0.000 description 1
239000011651 chromium Substances 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
239000000356 contaminant Substances 0.000 description 1
239000002178 crystalline material Substances 0.000 description 1
230000007547 defect Effects 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000007613 environmental effect Effects 0.000 description 1
230000005284 excitation Effects 0.000 description 1
229940030980 inova Drugs 0.000 description 1
238000005304 joining Methods 0.000 description 1
HEPLMSKRHVKCAQ-UHFFFAOYSA-N lead nickel Chemical compound [Ni].[Pb] HEPLMSKRHVKCAQ-UHFFFAOYSA-N 0.000 description 1
238000000691 measurement method Methods 0.000 description 1
239000007769 metal material Substances 0.000 description 1
-1 microetching Substances 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
238000001020 plasma etching Methods 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
229920001721 polyimide Polymers 0.000 description 1
229920001296 polysiloxane Polymers 0.000 description 1
239000011241 protective layer Substances 0.000 description 1
239000000376 reactant Substances 0.000 description 1
238000011084 recovery Methods 0.000 description 1
230000009467 reduction Effects 0.000 description 1
239000003870 refractory metal Substances 0.000 description 1
229910052594 sapphire Inorganic materials 0.000 description 1
239000010980 sapphire Substances 0.000 description 1
239000007787 solid Substances 0.000 description 1
230000006641 stabilisation Effects 0.000 description 1
238000011105 stabilization Methods 0.000 description 1
239000013589 supplement Substances 0.000 description 1
239000010409 thin film Substances 0.000 description 1

Classifications

- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/6842—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow with means for influencing the fluid flow
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/6845—Micromachined devices
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/696—Circuits therefor, e.g. constant-current flow meters
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/696—Circuits therefor, e.g. constant-current flow meters
- G01F1/6965—Circuits therefor, e.g. constant-current flow meters comprising means to store calibration data for flow signal calculation or correction

Landscapes

Physics & Mathematics (AREA)
Fluid Mechanics (AREA)
General Physics & Mathematics (AREA)
Measuring Volume Flow (AREA)

JP58203752A 1983-08-26 1983-11-01 サ−マル質量流量計 Granted JPS6050419A (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US06/526,860 US4542650A (en)	1983-08-26	1983-08-26	Thermal mass flow meter
US526860		2000-03-16

Publications (2)

Publication Number	Publication Date
JPS6050419A true JPS6050419A (ja)	1985-03-20
JPH0342616B2 JPH0342616B2 (2)	1991-06-27

Family

ID=24099109

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP58203752A Granted JPS6050419A (ja)	1983-08-26	1983-11-01	サ−マル質量流量計

Country Status (4)

Country	Link
US (1)	US4542650A (2)
EP (1)	EP0137687A1 (2)
JP (1)	JPS6050419A (2)
DE (1)	DE137687T1 (2)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4794947A (en) *	1986-11-29	1989-01-03	Kabushiki Kaisha Nippon IC (also trading as Nippon IC, Inc.)	Mass flow controller
JP2004514140A (ja) *	2000-11-03	2004-05-13	メンシク　インコーポレイテッド	閉ループヒータ制御付き熱対流加速度計
WO2008132956A1 (ja) *	2007-04-24	2008-11-06	Konica Minolta Medical & Graphic, Inc.	流量センサ
WO2013175547A1 (ja) *	2012-05-21	2013-11-28	愛知時計電機株式会社	流量検出器
JP2020144124A (ja) *	2019-03-05	2020-09-10	シリコンマイクロストラクチャーズ，インコーポレイテッドＳｉｌｉｃｏｎＭｉｃｒｏｓｔｒｕｃｔｕｒｅｓ，Ｉｎｃ．	流量センサ

Families Citing this family (109)

* Cited by examiner, † Cited by third party
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US4691566A (en) *	1984-12-07	1987-09-08	Aine Harry E	Immersed thermal fluid flow sensor
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US4648270A (en) *	1984-02-22	1987-03-10	Sirris Flow Technology, Inc.	Mass flowmeter
JPS60236024A (ja) *	1984-05-09	1985-11-22	Nippon Soken Inc	直熱型空気流量センサ
JPS61178614A (ja) *	1985-02-02	1986-08-11	Nippon Soken Inc	直熱型流量センサ
US4685331A (en) *	1985-04-10	1987-08-11	Innovus	Thermal mass flowmeter and controller
JPS61274222A (ja) *	1985-05-30	1986-12-04	Sharp Corp	流量センサ
FR2586105B1 (fr) *	1985-08-06	1990-08-31	Veglia	Circuit conducteur et procede de fabrication de ce circuit
JPS62123318A (ja) *	1985-08-13	1987-06-04	Nippon Soken Inc	直熱型流量センサ
GB2179748B (en) *	1985-08-20	1989-09-06	Sharp Kk	Thermal flow sensor
AT396998B (de) *	1985-12-09	1994-01-25	Ottosensors Corp	Messeinrichtungen und rohranschluss sowie verfahren zur herstellung einer messeinrichtung und verfahren zur verbindung von rohren mit einer messeinrichtung bzw. zur herstellung von rohranschlüssen
US4682503A (en) *	1986-05-16	1987-07-28	Honeywell Inc.	Microscopic size, thermal conductivity type, air or gas absolute pressure sensor
DE3724966C3 (de) *	1986-07-29	1996-03-21	Sharp Kk	Sensor
US4943032A (en) *	1986-09-24	1990-07-24	Stanford University	Integrated, microminiature electric to fluidic valve and pressure/flow regulator
US4966646A (en) *	1986-09-24	1990-10-30	Board Of Trustees Of Leland Stanford University	Method of making an integrated, microminiature electric-to-fluidic valve
US4821997A (en) *	1986-09-24	1989-04-18	The Board Of Trustees Of The Leland Stanford Junior University	Integrated, microminiature electric-to-fluidic valve and pressure/flow regulator
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Also Published As

Publication number	Publication date
DE137687T1 (de)	1986-02-27
US4542650A (en)	1985-09-24
EP0137687A1 (en)	1985-04-17
JPH0342616B2 (2)	1991-06-27

Publication	Publication Date	Title
JPS6050419A (ja)	1985-03-20	サ−マル質量流量計
US4696188A (en)	1987-09-29	Semiconductor device microstructure
US4624137A (en)	1986-11-25	Semiconductor device
US6055869A (en)	2000-05-02	Lift force fluid flow sensor for measuring fluid flow velocities
US4472239A (en)	1984-09-18	Method of making semiconductor device
US6684694B2 (en)	2004-02-03	Flow sensor, method of manufacturing the same and fuel cell system
US4966037A (en)	1990-10-30	Cantilever semiconductor device
US7908096B2 (en)	2011-03-15	Integrated micromachined thermal mass flow sensor and methods of making the same
US4633578A (en)	1987-01-06	Miniature thermal fluid flow sensors and batch methods of making same
EP0203622A2 (en)	1986-12-03	Thermal mass flowmeter and controller
US20070089789A1 (en)	2007-04-26	Higher accuracy pressure based flow controller
US8939012B2 (en)	2015-01-27	Thermal conductivity detector and gas chromatograph using same
US8286478B2 (en)	2012-10-16	Sensor bridge with thermally isolating apertures
US20070017285A1 (en)	2007-01-25	Micromachined thermal mass flow sensors and insertion type flow meters and manufacture methods
JPH0862011A (ja)	1996-03-08	熱伝播時間計測型フローセンサとその製造方法
EP0076935B1 (en)	1989-07-19	Integrated semiconductor device and method of fabricating said device
US6948361B2 (en)	2005-09-27	Gasket flow sensing apparatus and method
US6508117B1 (en)	2003-01-21	Thermally balanced mass air flow sensor
JPH11119835A (ja)	1999-04-30	マスフローコントローラおよび集積化流量制御装置
US20260002806A1 (en)	2026-01-01	Thermal flow sensor for determining a flow rate of a fluid
JPS5872059A (ja)	1983-04-28	半導体装置、流量計及びその製造方法
Terao et al.	2007	Non-wetted thermal micro flow sensor
US7408133B2 (en)	2008-08-05	Method of thermally coupling a flow tube or like component to a thermal sensor and sensor systems formed thereby
EP0134859A1 (en)	1985-03-27	Fluid flow sensors
JP3067883B2 (ja)	2000-07-24	センサ装置