JPS6055687A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6055687A
JPS6055687A JP58164484A JP16448483A JPS6055687A JP S6055687 A JPS6055687 A JP S6055687A JP 58164484 A JP58164484 A JP 58164484A JP 16448483 A JP16448483 A JP 16448483A JP S6055687 A JPS6055687 A JP S6055687A
Authority
JP
Japan
Prior art keywords
semiconductor laser
cap layer
type semiconductor
pellet
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58164484A
Other languages
Japanese (ja)
Inventor
Atsushi Murakami
篤史 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58164484A priority Critical patent/JPS6055687A/en
Publication of JPS6055687A publication Critical patent/JPS6055687A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent the short-circuit of the P-N junction and the deterioration of characteristics by a method wherein the final epitaxial layer is etched in groove form along a stripe in the case of the fusing of a semiconductor laser pellet on a heat sink by up-side-down manner in order to reduce the heat resistanc. CONSTITUTION:A thick cap layer 12 is provided and then etched in groove form along the stripe 11 in order to facilitate diffusion. The mounting of the semiconductor laser chip thus obtained causes the operating part of the semiconductor laser to separate from a fusing material 19 because of the thickness of the cap layer 12. Thereby, adverse influences on the chip such as the creeping-up of the material 19 can be removed.

Description

【発明の詳細な説明】 本発明は半導体レーザペレッ）Ｋ関するものである。[Detailed description of the invention] The present invention relates to a semiconductor laser pellet.

従来の半導体レーザペレットを熱抵抗低減のためアップ
・サイド・ダウン（ｕｐ−ｓ　ｉｄｅ−ｄｏｗｎ）でヒ
ートシンク上に融着材を用いて融着する場合レーザ動作
部であるｐｎｎ接合部融着部に接近しているため、ｐｎ
接合部に溶けた融着材がはい上がシルｎ接合を短絡させ
た９、特性を劣化させる恐れがあった。When conventional semiconductor laser pellets are fused on a heat sink using a fusion material in an up-side-down manner to reduce thermal resistance, there is Because they are close, pn
There was a risk that the melted adhesive material in the joint would short-circuit the sill-n junction9 and deteriorate the characteristics.

本発明は従来のこれらの欠点を解決することのできる半
導体レーザを提供することを目的とする。An object of the present invention is to provide a semiconductor laser that can solve these conventional drawbacks.

本発明は、最終エビ！−（キャップ層）をストライプに
沿って溝状にエツチングすることを特徴とする半導体レ
ーザである。The present invention is the final shrimp! - This is a semiconductor laser characterized by etching a (cap layer) in the form of a groove along stripes.

以下本発明の詳細を図面を参照して説明する。The details of the present invention will be explained below with reference to the drawings.

第１図および第２図は従来のプレーナストライプ型の半
導体レーザペレットの斜視図およびそのペレットのマウ
ントしたときの断面図である。この方法ではキャップ層
２が薄く融着材０”に接近する九め、ｐｎ接合部に溶け
た融着材９がはい上がりｐｎ接合部の短絡、特性の劣化
、出射光の妨害などの恐れがある。FIGS. 1 and 2 are a perspective view of a conventional planar stripe type semiconductor laser pellet and a sectional view of the pellet when it is mounted. In this method, when the cap layer 2 is thin and approaches the melting material 0'', the melted melting material 9 may creep into the pn junction and cause a short circuit at the pn junction, deterioration of characteristics, and interference with the emitted light. be.

そこで第３図の様に従来の薄いキャップ層２を厚いキャ
ップ層１２にし、また拡散しやすくするためにキャップ
層１２をストライプ（拡散部１１）Ｋ沿って溝状に舌ツ
チングする。Therefore, as shown in FIG. 3, the conventional thin cap layer 2 is changed to a thick cap layer 12, and the cap layer 12 is grooved along the stripes (diffusion portions 11) K to facilitate diffusion.

この様にして得られ九半導体レーザチップをマウントし
た状態を第４図に示す。FIG. 4 shows a state in which the nine semiconductor laser chips obtained in this manner are mounted.

キャップ層１２を厚くしたため半導体レーずの動作部は
融着材１９よシ離れ、融着材１９のはい上シ等の半導体
レーザチップに及ばす悪影舎は取ｐ除かれている。Since the cap layer 12 is made thicker, the operating part of the semiconductor laser is separated from the welding material 19, and the shadows on the semiconductor laser chip, such as the upper part of the welding material 19, are removed.

以上の説明はプレーナストライプ型半導体レーザについ
てであるが、他の構造の半導体レーザにも適用できる。Although the above description relates to a planar stripe type semiconductor laser, it can also be applied to semiconductor lasers with other structures.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来のプレーナストライプ型半導体レーザペレ
ットの斜視図。第２図は第１図のペレットのマウント時
の断面図。第３図は本発明によるプレーナストライプ型
半導体レーザペレットの斜視図。第４図は改良され圧プ
レーナストライブ型半導体レーザペレットのマウント時
の断面図。 ここで１・・・・・・従来のプレーナストライプ型半導
体レーザの拡散部、２・・・・・・従来のプレーナスト
ライプ型半導体レーザのキャップ層、３・・・・・・従
来のプレーナストライプ型半導体レーザのクラッド層、
４・・・・・・従来のプレーナスト２イブ型半導体レー
ザの活性層、５・・・・・・従来のプレ、−ナスドライ
ブ型半導体レーザのクラッド層、６・・・・・・従来の
プレーナストライプ型半導体レーずの基板、７・・・・
・・従来のプレーナストライプ型半導体レーザの電極、
８・・・・・・従来のプレーナストライプ型半導体レー
ザの発光部、９・・・・・・融着材、１１・・・・・・
改良されたプレーテストライプ型半導体レーザの拡散部
、１２・・・・・・改良されたプレーナストライプ型半
導体レーザのキャップ層、１３・・・・・・改良され圧
プレーナストライブ型半導体レーザのクラッド層、１４
・・・・・・改良されたプレーナストライプ型半導体レ
ーザの活性Ｊ−１ｔ５・・・・・・改良され九プレーナ
ストライプ型半導体レーザのクラッド層、１６・・・・
・・改良されたグレーナスドライブ型半導体レーザの基
板、１７・・・・・・改良されたグレーナスドライブ型
半導体レーザの電極、１８・・・・・・改良されたプレ
ーナストライプ型半導体レーザの発光部、１９・・・・
・・融着材。 第　１　図 ９ 第２　図 ｑ 第４　凹FIG. 1 is a perspective view of a conventional planar stripe type semiconductor laser pellet. FIG. 2 is a sectional view of the pellet shown in FIG. 1 when mounted. FIG. 3 is a perspective view of a planar stripe type semiconductor laser pellet according to the present invention. FIG. 4 is a sectional view of the improved pressure planar strip type semiconductor laser pellet when mounted. Here, 1... Diffusion part of a conventional planar stripe type semiconductor laser, 2... Cap layer of a conventional planar stripe type semiconductor laser, 3... Conventional planar stripe type semiconductor laser. cladding layer of semiconductor laser,
4... Active layer of conventional planar drive type semiconductor laser, 5... Cladding layer of conventional planar drive type semiconductor laser, 6... Conventional planar layer. Striped semiconductor laser substrate, 7...
・・Electrode of conventional planar stripe type semiconductor laser,
8... Light emitting part of conventional planar stripe type semiconductor laser, 9... Fusion material, 11...
Diffusion part of improved planar stripe type semiconductor laser, 12... Cap layer of improved planar stripe type semiconductor laser, 13... Cladding of improved planar stripe type semiconductor laser layer, 14
...Activity J-1t5 of improved planar stripe semiconductor laser... Cladding layer of improved nine planar stripe semiconductor laser, 16...
. . . Substrate of improved Grainus drive semiconductor laser, 17 . . . Electrode of improved Grainus drive semiconductor laser, 18 . . . Light emission of improved planar stripe semiconductor laser. Part, 19...
・Fusion material. 1st Figure 9 2nd Figure q 4th Concave

Claims (1)

【特許請求の範囲】[Claims] 半導体レーザペレットの最終エビ層をストライプに沿つ
て溝状にエツチングすることを特徴とする半導体レーザ
。A semiconductor laser characterized in that the final layer of a semiconductor laser pellet is etched in a groove shape along stripes.
JP58164484A 1983-09-07 1983-09-07 Semiconductor laser Pending JPS6055687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58164484A JPS6055687A (en) 1983-09-07 1983-09-07 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58164484A JPS6055687A (en) 1983-09-07 1983-09-07 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6055687A true JPS6055687A (en) 1985-03-30

Family

ID=15794042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58164484A Pending JPS6055687A (en) 1983-09-07 1983-09-07 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6055687A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63141889A (en) * 1986-12-03 1988-06-14 ヤマハ発動機株式会社 Exhaust controller for car

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63141889A (en) * 1986-12-03 1988-06-14 ヤマハ発動機株式会社 Exhaust controller for car

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