JPS6057611A - 分子線源シヤツタ - Google Patents

分子線源シヤツタ

Info

Publication number
JPS6057611A
JPS6057611A JP58145507A JP14550783A JPS6057611A JP S6057611 A JPS6057611 A JP S6057611A JP 58145507 A JP58145507 A JP 58145507A JP 14550783 A JP14550783 A JP 14550783A JP S6057611 A JPS6057611 A JP S6057611A
Authority
JP
Japan
Prior art keywords
shutter
cell
beam source
molecular beam
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58145507A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0554253B2 (2
Inventor
Shigeru Okamura
茂 岡村
Junji Saito
淳二 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58145507A priority Critical patent/JPS6057611A/ja
Publication of JPS6057611A publication Critical patent/JPS6057611A/ja
Publication of JPH0554253B2 publication Critical patent/JPH0554253B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP58145507A 1983-08-09 1983-08-09 分子線源シヤツタ Granted JPS6057611A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58145507A JPS6057611A (ja) 1983-08-09 1983-08-09 分子線源シヤツタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58145507A JPS6057611A (ja) 1983-08-09 1983-08-09 分子線源シヤツタ

Publications (2)

Publication Number Publication Date
JPS6057611A true JPS6057611A (ja) 1985-04-03
JPH0554253B2 JPH0554253B2 (2) 1993-08-12

Family

ID=15386846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58145507A Granted JPS6057611A (ja) 1983-08-09 1983-08-09 分子線源シヤツタ

Country Status (1)

Country Link
JP (1) JPS6057611A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6359318U (2) * 1986-10-07 1988-04-20

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4813515U (2) * 1971-07-02 1973-02-15
JPS54122766U (2) * 1978-02-15 1979-08-28
JPS54180662U (2) * 1978-06-12 1979-12-20
JPS60129126U (ja) * 1984-02-06 1985-08-30 日本電気株式会社 分子線エピタキシ装置
JPS6150326A (ja) * 1984-08-20 1986-03-12 Fujitsu Ltd 半導体結晶成長装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4813515U (2) * 1971-07-02 1973-02-15
JPS54122766U (2) * 1978-02-15 1979-08-28
JPS54180662U (2) * 1978-06-12 1979-12-20
JPS60129126U (ja) * 1984-02-06 1985-08-30 日本電気株式会社 分子線エピタキシ装置
JPS6150326A (ja) * 1984-08-20 1986-03-12 Fujitsu Ltd 半導体結晶成長装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6359318U (2) * 1986-10-07 1988-04-20

Also Published As

Publication number Publication date
JPH0554253B2 (2) 1993-08-12

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