JPS6060944A - Glass for coating semiconductor - Google Patents
Glass for coating semiconductorInfo
- Publication number
- JPS6060944A JPS6060944A JP16602683A JP16602683A JPS6060944A JP S6060944 A JPS6060944 A JP S6060944A JP 16602683 A JP16602683 A JP 16602683A JP 16602683 A JP16602683 A JP 16602683A JP S6060944 A JPS6060944 A JP S6060944A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- semiconductor
- powder
- coating
- willemite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 239000011248 coating agent Substances 0.000 title claims abstract description 17
- 238000000576 coating method Methods 0.000 title claims abstract description 17
- 239000000843 powder Substances 0.000 claims abstract description 16
- 229910052844 willemite Inorganic materials 0.000 claims abstract description 7
- 229910011255 B2O3 Inorganic materials 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 description 6
- 238000007789 sealing Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000945 filler Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、半導体被覆用ガラス、特に電極を含めてＰ
−Ｎ接合部を有するシリコンダイオード等の半導体素子
全体を厚いガラス層で被覆する。所謂モールド型半導体
を製造するために好適な封着用ガラス組成物に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides glass for semiconductor coating, particularly P
The entire semiconductor device, such as a silicon diode with a -N junction, is covered with a thick layer of glass. The present invention relates to a sealing glass composition suitable for producing a so-called molded semiconductor.
半導体被覆用ガラスに要求される特性としては、封着後
のガラスの熱膨張係数が半導体素子のシリコン及び電極
材料であるモリブデンまたはタングステンの金属に整合
すること、高温ではシリコン等の半導体素子の特性が劣
化する恐れがあるため封着温度が７５０’Ｃ以下である
こと、対置後の半導体の電気的特性が優れ信頼性が高い
こと等がある。The properties required of glass for semiconductor coating include that the coefficient of thermal expansion of the glass after sealing matches the silicon of the semiconductor element and the metal of molybdenum or tungsten that is the electrode material, and that the characteristics of semiconductor elements such as silicon at high temperatures are required. The sealing temperature must be 750'C or lower to avoid the risk of deterioration, and the semiconductor after placement must have excellent electrical characteristics and high reliability.
本発明の目的は、上記半導体被覆用ガラスに要求される
諸特性中、封着後の半導体の電気的特性、具体的には高
い逆耐電圧を有し、且つ逆方向洩れ電流の極めて小さい
、所謂ハードブレークダウン（ｈａｒｄ ｂｒｅａｌｃ
ｄｏｗｎ ）の波形を示し、しかもプロ、キング特性に
優れた半導体被覆用ガラスを提供することである。尚、
ハードブレークダウンに対して逆耐電圧が低く、逆方向
洩れ電流の大きい場合には、所謂ソフトブレークダウン
（５ｏｆｔ ｂｒｅａｋｄｏｗｎ ）の波形を示し、半
導体の信頼性に欠けることになる。The object of the present invention is to have the electrical properties of the semiconductor after sealing among the various properties required of the glass for semiconductor coating, specifically, to have high reverse withstand voltage and extremely low reverse leakage current. So-called hard breakdown
It is an object of the present invention to provide a glass for semiconductor coating, which exhibits a waveform of 100 nm and 200 nm, and has excellent pro- and king characteristics. still,
If the reverse withstand voltage is lower than that of hard breakdown and the reverse leakage current is large, a so-called soft breakdown (5of breakdown) waveform will be exhibited, resulting in a lack of reliability of the semiconductor.
本発明者は、ＺｎＯ−Ｂｌ ０ｍ −５ｉ０２− Ｐｂ
ＯＪのガラス粉末にウィレマイト粉末を粉末を所定量添
加することにより、前記目的に合致する半導体被覆用ガ
ラスが得られることを見出した。The inventor has discovered that ZnO-Bl0m-5i02-Pb
It has been found that by adding a predetermined amount of willemite powder to OJ glass powder, a glass for semiconductor coating that meets the above purpose can be obtained.
本発明の被覆用ガラスは、主成分の割合が重量％で、ｚ
ｎ０４５〜７５、Ｉｌ、ｏ、 １５〜３５、ｓｉｏ、
２〜２０ 。The coating glass of the present invention has a main component ratio of z
n045-75, Il, o, 15-35, sio,
2-20.
ＰｂＯＯ〜１０からなるガラス粉末に、ウイレマイト粉
末を０．０１〜２０．０重量％添加してなる組成物であ
る。This composition is made by adding 0.01 to 20.0% by weight of willemite powder to glass powder consisting of PbOO to 10.
本発明の被覆用ガラスにおいて、ガラス粉末の各成分の
範囲を上記のように限定したのは次のとおりである。In the coating glass of the present invention, the range of each component of the glass powder is limited as described above.
ＺｎＯが４５％以下のときは熱膨張係数が大きくなり過
ぎ、７５％以上になるとガラスが失透し易くなる。When ZnO is 45% or less, the coefficient of thermal expansion becomes too large, and when it is 75% or more, the glass tends to devitrify.
Ｂ２Ｏ３が１５％以下になるとガラスが失透し易くなり
、３５％以上になると均質なガラスが得られなくなると
共に、熱膨張係数が大きくなり過ぎる。When B2O3 is less than 15%, the glass tends to devitrify, and when it is more than 35%, homogeneous glass cannot be obtained and the coefficient of thermal expansion becomes too large.
＄１０！が２％以下になるとガラスが失透し易くなり、
１５％以上になると均質なガラスが得にくくなる。$10! When the glass becomes less than 2%, the glass tends to devitrify.
If it exceeds 15%, it becomes difficult to obtain homogeneous glass.
ＰｂＯが１０％以上になると熱膨張係数が大きくなり過
ぎる。このガラス粉末には、上記成分以外に、Ｃθ０！
、５ｂ２０３、Ａ１．０８、Ｎｂ！、０．、Ｂｉ、０３
等を少量含有してもよい。When PbO exceeds 10%, the coefficient of thermal expansion becomes too large. In addition to the above components, this glass powder contains Cθ0!
, 5b203, A1.08, Nb! ,0. , Bi, 03
etc. may be contained in small amounts.
本発明の半導体被覆用ガラスは、上記説明のガラス粉末
に対して無機耐火物の添加剤、所謂「フィラー」として
、ウィレマイト（２ｚｎＯ−８１ｏｔ）粉末を重量比で
α０１〜２０．０％混合して成る。このフィラーの添加
によりガラスが結晶化し、初期の半導体の表面電荷密度
（初期ＮＦＢ）を適当な値に変化させると同時に、ガラ
ス中の可動イオンを不動化させることができる。これに
より逆耐電圧が高く逆方向洩れ電流の極めて小さい半導
体装置を得られる。このウイレマイト粉末のフィラーは
０．０１％以上の含有で前記効果が発揮されるが、２０
％以上含有するときは結晶化が促進されすぎて流動性が
低下し、半導体素子に対する塗れが悪くなり気密封着が
得られがたくなる。The glass for semiconductor coating of the present invention is obtained by mixing willemite (2znO-81ot) powder as an inorganic refractory additive, so-called "filler" with the glass powder described above at a weight ratio of α01 to 20.0%. Become. Addition of this filler crystallizes the glass, changing the initial surface charge density of the semiconductor (initial NFB) to an appropriate value, and at the same time making it possible to immobilize mobile ions in the glass. This makes it possible to obtain a semiconductor device with high reverse withstand voltage and extremely low reverse leakage current. The above effect is exhibited when the filler content of this willemite powder is 0.01% or more, but 20
When the content is more than %, crystallization is promoted too much, fluidity is reduced, the coating on the semiconductor element becomes poor, and it becomes difficult to obtain airtight sealing.
下表は、本発明の半導体被覆用ガラスに係る実施例の試
料で、下段にはその熱膨張係数及び被覆封着温度を示す
。The table below shows samples of examples of the glass for semiconductor coating of the present invention, and the lower row shows the thermal expansion coefficient and coating sealing temperature.
以下余白
半導体の初期特性としての逆耐電圧、逆洩れ電流の特性
許価は、シリコンダイオードのＰ７Ｎ接合面に上表に掲
げた本発明の被覆用ガラスを塗布した後、乾燥させ、次
いで封着した試料について行った。カーブトレーサーに
て逆方向の波形を確認したところ、本発明のガラスで被
覆した前記ダイオード試料は、洩れ電流が１μ八以下で
、且つ１７００〜！２０００Ｖの設計耐圧に近い高電圧
でノ１−ドブレークダウンの波形を示すものであった。Below are the initial characteristics of the semiconductor, such as reverse withstand voltage and reverse leakage current. The test was carried out on the sample. When the waveform in the opposite direction was confirmed using a curve tracer, the leakage current of the diode sample coated with the glass of the present invention was 1 μ8 or less, and 1700~! It exhibited a node breakdown waveform at a high voltage close to the design breakdown voltage of 2000V.
半導体のブロッキング特性は、ＭＯ８構造体を有するダ
イオードを作製し、これにＢＴ処理を行うことにより、
高温バイアス下における電気的な安定性を調べる方法に
より確認され得るが、本発明者は、この方法により上表
に掲げた本発明の被覆用ガラス試料のブｔｆｆ、キング
特性を評価した。The blocking characteristics of semiconductors can be determined by fabricating a diode with an MO8 structure and performing BT processing on it.
This can be confirmed by a method of examining electrical stability under high-temperature bias, and the present inventor evaluated the Butff and King characteristics of the coating glass samples of the present invention listed in the above table using this method.
即ち、ｎ型シリコン上に本発明の被覆用ガラスを約５μ
の厚さ゛に封着し、その上にアルミニュウム電極を蒸着
してＭＯＳ （ｍｅｔａｌ −ｏｘｉｄｅ −５ｉｌｉ
ｃｏｎ ）構造体のダイオードを作製し、これにＢＴ処
理、即ち２００℃で４００■の電圧を２時間、アルミニ
ウム電極を＋側として、且つまたは一側として夫々印加
する処理を行った後、該ＭＯ８構造体の表面電荷密度（
ＮＦＢ ）の変化量、所謂ΔＮＦＢを測定したところｏ
−４Ｘ １ｏ１１／ｄであつた。この結果は、本発明
の被覆用ガラスを用いた半導体が優れたブロッキング特
性を有することを示すものである。That is, the coating glass of the present invention is coated on n-type silicon at a thickness of about 5 μm.
MOS (metal-oxide-5ili
A diode of the MO8 structure was prepared, and it was subjected to a BT treatment, that is, a process of applying a voltage of 400 μm at 200° C. for 2 hours with the aluminum electrode as the + side and/or as one side. The surface charge density of the structure (
When we measured the amount of change in NFB), so-called ΔNFB, we found that
-4X 1o11/d. This result shows that the semiconductor using the coating glass of the present invention has excellent blocking properties.
手続補正書（頻り
昭和５９年を２２日
特許庁 長 官 殿
１ 事件の表示
蒔蜘５Ｂｋ吋′隻才慄薯／ｂｂ ＯＺ ＆今２ 布 州
の名称
＃蓬スット；栖ＩうＭｌｌビイン二２（３補正をする者
事件との関係 哨１才出願人
住所 滋賀県大津市晴嵐二丁目７番１号４、補正命令の
日付Procedural amendment (often dated 22nd, 1981) Director General of the Patent Office 1 Display of the case 蒔蜘5Bk吋'水慄薯/bb OZ & Now 2 Name of the state #蓬sut; 栖IU Mll biin 2 (Relationship with the case of the person making the amendment 3) Address of the applicant: 2-7-1-4 Seiran, Otsu City, Shiga Prefecture; Date of amendment order
Claims (1)
３〜３５．５ｉＯ１２〜２０、ｐｂｏ ｏ〜１０からな
るガラス粉末に、ウイレマイト粉末を０．０１〜２α０
重量％添加してなる半導体被覆用ガラス。The main components are ZnO45-75, Bloz 1 in weight%
Glass powder consisting of 3 to 35.5 iO12 to 20, pbo o to 10, and willemite powder at 0.01 to 2α0
Glass for semiconductor coating made by adding % by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16602683A JPS6060944A (en) | 1983-09-08 | 1983-09-08 | Glass for coating semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16602683A JPS6060944A (en) | 1983-09-08 | 1983-09-08 | Glass for coating semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6060944A true JPS6060944A (en) | 1985-04-08 |
| JPS6341861B2 JPS6341861B2 (en) | 1988-08-19 |
Family
ID=15823556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16602683A Granted JPS6060944A (en) | 1983-09-08 | 1983-09-08 | Glass for coating semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6060944A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0277485A (en) * | 1988-04-15 | 1990-03-16 | E I Du Pont De Nemours & Co | Encapsulating composition |
| JP2007013137A (en) * | 2005-06-30 | 2007-01-18 | Lg Phillips Lcd Co Ltd | Thin film transistor element for liquid crystal display device and manufacturing method thereof |
| CN110642519A (en) * | 2019-09-25 | 2020-01-03 | 湖南利德电子浆料股份有限公司 | Encapsulation slurry for aluminum nitride substrate and preparation method and application thereof |
| WO2024253095A1 (en) * | 2023-06-08 | 2024-12-12 | 日本電気硝子株式会社 | Material for coating semiconductor element, and sintered body for coating semiconductor element |
-
1983
- 1983-09-08 JP JP16602683A patent/JPS6060944A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0277485A (en) * | 1988-04-15 | 1990-03-16 | E I Du Pont De Nemours & Co | Encapsulating composition |
| JP2007013137A (en) * | 2005-06-30 | 2007-01-18 | Lg Phillips Lcd Co Ltd | Thin film transistor element for liquid crystal display device and manufacturing method thereof |
| CN110642519A (en) * | 2019-09-25 | 2020-01-03 | 湖南利德电子浆料股份有限公司 | Encapsulation slurry for aluminum nitride substrate and preparation method and application thereof |
| WO2024253095A1 (en) * | 2023-06-08 | 2024-12-12 | 日本電気硝子株式会社 | Material for coating semiconductor element, and sintered body for coating semiconductor element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6341861B2 (en) | 1988-08-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |