JPS607732A - Coating glass for semiconductor - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides glass for semiconductor coating, especially P-
The present invention relates to a sealing glass composition suitable for manufacturing a so-called molded semiconductor in which a semiconductor element such as a silicon diode having an N-junction is entirely covered with thick glass Ie7.

The properties required for glass for semiconductor devices include that the coefficient of thermal expansion of the glass after sealing matches that of the silicon of the semiconductor element and the molybdenum or tungsten metal used as the electrode material, and that the glass has a sealing temperature of 650°C or less. It is possible to achieve good hermetic sealing, and the semiconductor after sealing has excellent electrical characteristics and high reliability.

Among the characteristics required for the above-mentioned glass for semiconductor coating, the main feature of the present invention is to have electrical properties of the sealed rear half body, especially high reverse withstand voltage, and low reverse leakage current. A small, so-called hard breakdown (hard breaJcd)
The purpose of the present invention is to provide a glass for semiconductor coating with a waveform of 4VA and a blocking property.

In addition, the reverse withstand voltage is low against hard breakdown,
When the reverse leakage zero current is large, a so-called soft breakdown (5oftbrθakdOWn) waveform is exhibited, resulting in a lack of reliability of the semiconductor.

The object of the present invention is to mix NiO powder, Nb, O, and one or all of the three powders in an important ratio of 0.01 to 5% to crow powder having the composition expressed in the following weight%. achieved.

Zn0 85-55% Btus 10-30% Si0. 5-10% PbO15-40°MnOO-5% Ai, 0. 0~3% 0eOI Q~ 8% sb, o, o~ 3% As, 03 0~3% In the present invention, the range of each component of the glass powder [! The reasons for limiting II as described above are as follows.

If the ZnO content is 5556 or more, the flow rate of the glass will be poor and the ductility of the glass will be poor, making it impossible to obtain a good airtight seal, and if it is less than 85%, the thermal expansion coefficient will become too large. When E20. is 30% or more, the glass becomes inhomogeneous and the sealing temperature becomes too high, and when it is 10% or less, vitrification becomes difficult.

When Sing is 10% or more, the sealing humidity becomes too high and a homogeneous glass is obtained, resulting in MiA<5. If Sing is less than 5%, devitrification tends to occur during melting, making it impossible to obtain a stable glass. If pbo is 40% or more, the thermal expansion coefficient becomes too large, and if pbo is 15% or less, the sealing temperature becomes high, which is not preferable. OaOXMgO, Ba, and O are components that improve the electrical characteristics of semiconductor elements damaged by glass, and the effect is enhanced when at least one of these components is contained in an amount of 0.1% or more. , Ca07% or more, Mg08
% or more, and if BaO is 10% or more, a homogeneous glass cannot be obtained, and the coefficient of thermal expansion becomes too large. 5TIO
2. One or both of Bi□03 may be included for the purpose of improving the electrical characteristics of the semiconductor, but if each component exceeds 5%, the glass becomes inhomogeneous and the thermal IIIvl1la coefficient increases. becomes too large. Al! O,
stabilizes the glass and improves its chemical durability, but
17iE 1lill of glass if it is more than 3%
It becomes difficult to obtain a good hermetic seal. blood 01
, Cθ0□ improves the electrical properties of the glass-coated semi-rano J-body element, but MnC1t of 5% or more, 0
When it is more than eOJ%, it is difficult to form a homogeneous glass. 5
b20s, As2O3 is the electrical 'to1' of the semiconductor element.
Melting glass without deteriorating its properties! Although it can contribute to improving the f properties, if the content of each component exceeds 3%, a homogeneous glass will not be obtained.

Table 1 below shows composition examples of glass powder.

The lower part of the table shows the coefficient of thermal expansion of each sample glass at 30 to 300°C and the temperature of the seal γ1 exposed to the semiconductor layer.

Table 1 Honji 11 light half 3. t,'The Sugi-Tagawa glass is made of non-refractory I for the glass powder of 2ki 11., 1suJ.
S additive, so-called [As filler-1, NiO powder,
Th20. One or three powders are weighed (ii ratio is 0.01
~5% mixture. By adding this filler, 1 [L
It is possible to improve the physical characteristics. 11i0 powder is
Yb and OB powders are effective in improving the initial characteristics of the semiconductor, increasing reverse frost resistance, increasing pressure, and reducing reverse leakage current to show a good hard breakdown waveform. 9゛・S is effective in improving blocking characteristics.

The above effect is exhibited when this filler is contained in an amount of 0.01% or more, but when it is contained in an amount of 5% or more, the fluidity of the mother glass decreases and the crimpiness of the semiconductor element decreases, resulting in an airtight seal. becomes difficult to obtain. Said Nip.

In addition to the N-0 filler, Willemite ('2Z
nO・5iot) powder, lead ticunate・(PbO-
x) Powder, quartz glass (SiCh) powder, zircon (
ZnO-5hot) powder, copierite (2Mg0
・2A1. O,・5S:LO,) powder, etc. may be added to J7 as appropriate, thereby lowering the coefficient of thermal expansion of the glass powder and sufficiently matching the coefficient of thermal expansion of silicon, resulting in a good atmosphere.
9 and 11 can be made, and the electrical characteristics can be further improved.

Table 2 shows the thermal expansion coefficient and sealing temperature of the samples of Examples in which glass E of Table 1 was used and a filler was mixed therein.

Table 2 (Ratio of nails) Inverse i1i as initial characteristics of semiconductor; Characteristic tolerance of I voltage and reverse leakage current is P - N 47 of silicon diode
After applying the coating glass of the present invention listed in Table 2 above to the mating surface, it was dried and then sealed. I went to try it out. When the waveform in the opposite direction was zeroed with a curve tracer, it was found that the diode sample made of the glass of the present invention with Vfffl had a leakage current of less than lμA and a design of 150QV.
It showed a hard breakdown waveform at an open voltage close to the nit pressure.

Half ij;! Body noflocking q, J nature is M a s
A diode sample with Jil m body must be used, and BT
By processing, high njl! Under bias? 411 by the method of evaluating the chemical stability by
Although it may be difficult to understand, the present inventor has achieved the blocking characteristic I of the glass test piece for coating of the present invention listed in Table 2 above using this method.
I evaluated J Mi.

That is, the coating glass of the present invention is sealed on n-type silicon to a thickness of about 5 μm, and an aluminum electrode is vapor-deposited thereon to form an MGS (msal-glass-5ilic).
oh) Create a diode structure, apply BT treatment to it, apply 1u pressure of 400V at 200°Cr for 2 hours, and attach it to aluminum? After performing the process of applying E47 as the main side or as one side, the changes in the surface charge density (xx F B ) of the MGS Pak T filter y, λ, Iwa,
Yuru△N-F-B All 11 stations i All 11 stations i0~4 X 1
It was 011/li. This result shows that the IjBl of the present invention
Blocking characteristics of semiconductors using river debris 11
．． This indicates that the

4G ft'l'out M'1 person Nippon Electric Glass Co., Ltd.
, 1, Representative Nagasaki), 1(5-/'” ”’:I
'll'II':,:'j\～-11'

Claims (1)

[Claims] Zn0 86-55 BsOs 10-30 Sin, 5-10 P'bO15-40 Al, 0. 0-8 Mn01 0-5 Coo@O-8 sb, o, o-3 As10. Glass powder having a composition of 0 to 8 was added with fillers such as NiO powder, Nl), 0. Weight ratio of one or both powders is 0.0
Glass for semiconductor coating made of 1 to 5% compound.