JPS6065723A - Heat treatment of sintered film of cadmium sulfide - Google Patents
Heat treatment of sintered film of cadmium sulfideInfo
- Publication number
- JPS6065723A JPS6065723A JP17431483A JP17431483A JPS6065723A JP S6065723 A JPS6065723 A JP S6065723A JP 17431483 A JP17431483 A JP 17431483A JP 17431483 A JP17431483 A JP 17431483A JP S6065723 A JPS6065723 A JP S6065723A
- Authority
- JP
- Japan
- Prior art keywords
- cds
- film
- cadmium sulfide
- atmosphere
- glass substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、ソーダガラス基板と硫化カドミウム焼結膜(
以下CdS焼結膜と称す。)の密着性を向上させるCd
S焼結膜の熱処理方法に関する。Detailed Description of the Invention The present invention provides a soda glass substrate and a cadmium sulfide sintered film (
Hereinafter, this will be referred to as a CdS sintered film. ) to improve the adhesion of
The present invention relates to a heat treatment method for S sintered film.
従来、CdSの基板材料は、耐熱温度の高い高価なホウ
ケイ酸ガラス(パイレックス等)を用いていた。これは
CdSの焼結温度が650°C〜700°Cの的低い安
価なり−ダガラス基板を使用できなかった為である。Conventionally, expensive borosilicate glass (Pyrex, etc.) with high heat resistance has been used as a substrate material for CdS. This is because the sintering temperature of CdS is 650 DEG C. to 700 DEG C., which is low and inexpensive, and glass substrates could not be used.
従って、このような材料を使用して形成されたいわゆる
光導電体素子(受光素子)は、コストの高りものとなっ
ていた。Therefore, so-called photoconductor elements (light receiving elements) formed using such materials have been expensive.
その後、CdSの焼結方法の研究の結果、融剤として塩
化カドミウム(以下CdCj2 と称す。)を用いるこ
とにより、融剤CdCl2の融点直下の540’C〜5
65°Cの温度範囲で良質のCdS焼結膜が形成できる
ことが判り、ソーダガラス基板の使用が可能となり、素
子のコス■・が著しく安価なものとなった。Afterwards, as a result of research on the sintering method of CdS, it was found that by using cadmium chloride (hereinafter referred to as CdCj2) as a fluxing agent, 540'C~5
It was found that a high quality CdS sintered film could be formed in a temperature range of 65°C, making it possible to use a soda glass substrate, and making the device significantly cheaper.
しかしながら、ソーダガラス基板上に、このような方法
で形成されたCdS焼結膜は、内部応力が大きくて、自
然放置においても自壊することや、水洗においては簡単
にはく離することがあり実用性に問題があった。However, the CdS sintered film formed by this method on a soda glass substrate has a large internal stress, and may self-destruct even when left alone, or easily peel off when washed with water, making it impractical. was there.
このことは、ソーダガラスの熱膨張係数は、9゜×1σ
7cm10cであるのに対して、ホウケイ酸ガラス熱膨
張係数が、ソーダガラスは、ホウケイ酸の3倍であるこ
とが起因しているものと考えられる6さらにまた、54
0°C〜565°Cの焼結温度範囲も一因トナッている
ことが考えラレル。This means that the thermal expansion coefficient of soda glass is 9° x 1σ
This is thought to be due to the fact that the coefficient of thermal expansion of borosilicate glass is three times that of borosilicate glass, whereas the coefficient of thermal expansion of soda glass is 54 cm.
It is thought that the sintering temperature range of 0°C to 565°C is also a contributing factor.
本発明の目的は、このような従来技術の欠点を解消し、
ソーダガラス基板上に形成したCdS焼結膜に2次的に
熱処理、即ちアニール処理を施すことによって、Cd−
8焼結膜とソーダガラス基板との密着性を向上させる熱
処理方法を提供することにある。The purpose of the present invention is to eliminate such drawbacks of the prior art,
Cd-
8. An object of the present invention is to provide a heat treatment method that improves the adhesion between a sintered film and a soda glass substrate.
この目的を達成するために、本発明は、CdS粉末に、
CaCl2及び有機バインダーを加えてCdSペースト
ヲ作り、該ペーストをソーダガラス基板上に印刷し、こ
れを予備乾燥した後、窒素ガス(N2)雰囲気中で焼結
して得られるCdS膜を、空気雰囲気中に於て460°
C〜500°Cの温度範囲で10分間以内の熱処理を行
うこと全特徴とする。To achieve this objective, the present invention provides CdS powder with
A CdS paste is made by adding CaCl2 and an organic binder, the paste is printed on a soda glass substrate, this is pre-dried, and the resulting CdS film is sintered in a nitrogen gas (N2) atmosphere. 460° at
All characteristics are that heat treatment is performed within 10 minutes at a temperature range of 500°C to 500°C.
以下、本発明を実施例を用いて説明する。The present invention will be explained below using examples.
先ず、CdS粉末に、融剤CdCt2及び有機ノくイン
ダーを加えてCdSペーストを作り、該ペーストをソー
ダガラス基板上に印刷する。First, a CdS paste is made by adding a flux CdCt2 and an organic inder to CdS powder, and the paste is printed on a soda glass substrate.
次に、これを予備乾燥I−だ後、N、啄囲尖(中で焼結
する。Next, after pre-drying this, it is sintered in a N.
このようにして得られたソーダガラス基板上のCdS膜
を素材として用いて、以下にこの素材の熱処理、即ちア
ニール処理の実験結果を説明する。Using the thus obtained CdS film on the soda glass substrate as a material, experimental results of heat treatment, that is, annealing treatment, of this material will be described below.
(1) N2 、N2 、CO2雰囲気中では、アニー
ル処理の効果はなかった。(1) There was no effect of annealing in N2, N2, and CO2 atmospheres.
これに対して、空気雰囲気中では、アニール処理の効果
が顕著に現われた。このことによりCdS膜とソーダガ
ラス基板との密着性は、空気中σ)02と強い相関をも
っていることが判った。On the other hand, in an air atmosphere, the effect of annealing treatment was noticeable. This revealed that the adhesion between the CdS film and the soda glass substrate had a strong correlation with σ)02 in air.
(2)アニール処理温度は、460°C以上を必要とす
る。(2) The annealing temperature needs to be 460°C or higher.
460°C以上の空気雰囲気中にCdS膜全保全保持と
経過時間とともに、0.と反t−r2、し、CdS膜の
表(■が赤味を増しながら硫酸塩及び酸化物に変化して
いき、劣化が激しく歌った。The CdS film was completely maintained in an air atmosphere of 460°C or higher, and with the elapsed time, 0. The surface of the CdS film (■) turned reddish and changed into sulfates and oxides, showing severe deterioration.
(3)以上のことより、空気雰囲気中σ)アニール処理
に於て、cdsmと基板の密着性it、鴫の作用により
向上し、CdS膜質は、0.の作用により劣化すること
が判明した。(3) From the above, in the annealing process (σ) in an air atmosphere, the adhesion between the Cdsm and the substrate is improved by the action of the atom, and the CdS film quality is 0. It was found that the deterioration occurred due to the action of
(4)次にこの相反する作用につき、アニール処理時間
に対するCdS膜の密着強度と、CdS膜質の変化を調
べた。(4) Next, regarding these contradictory effects, changes in the adhesion strength of the CdS film and the quality of the CdS film with respect to the annealing treatment time were investigated.
第1図は、空気雰囲気炉を用いて、500°Cの温度で
アニール処理を行った際の、アニール処理時間に対する
、ソーダガラス基板上のCdS膜の密着強度の状態を示
す関係図である。FIG. 1 is a relationship diagram showing the state of adhesion strength of a CdS film on a soda glass substrate with respect to annealing treatment time when annealing treatment is performed at a temperature of 500° C. using an air atmosphere furnace.
第2図は、第1図と同じ条件でアニール処理を行った際
の、アニール処理時間に対する、いわゆる受光素子とし
て形成されたCdS膜質の変化を、この受光素子の端子
の開放端電圧V。0の絶対値の低下として示す関係図で
ある。FIG. 2 shows the change in the quality of the CdS film formed as a so-called light-receiving element with respect to the annealing time when annealing was performed under the same conditions as in FIG. 1, and the open-circuit voltage V at the terminal of the light-receiving element. It is a relationship diagram shown as a decrease in the absolute value of 0.
第1図から明らかなように、CdS膜の空気中でのアニ
ール処理の効果は、極めて短時間で発生しており、例え
ば500°Cの温度で1分間保持するだけで密着強度は
100%に達した。As is clear from Figure 1, the effect of annealing the CdS film in air occurs in an extremely short time; for example, the adhesion strength can reach 100% just by holding it at a temperature of 500°C for 1 minute. Reached.
さらに、10分、20分と保持時間を延長しても密着強
度の増減はなかった。Further, even when the holding time was extended to 10 minutes and 20 minutes, there was no increase or decrease in the adhesion strength.
CdS膜質の変化については・第2図から明らかなよう
に、500°Cのアニール処理時間、1〜10分間では
CdS膜質の電気的特性の変化はみられなかったが、1
0分以上の保持時間に於ては、電気的特性、即ちV。0
の値に異常が発生し、CdS膜表面に微少な異結晶の発
生が観察された。Concerning changes in CdS film quality - As is clear from Figure 2, no change in the electrical properties of CdS film was observed during the annealing treatment at 500°C for 1 to 10 minutes;
At holding times of 0 minutes or more, the electrical characteristics, ie, V. 0
An abnormality occurred in the value of , and the generation of minute foreign crystals was observed on the surface of the CdS film.
従って、以上のことより、460°C〜500°Cにて
10分間以内の空気雰囲気中に於けるアニール処理によ
って、CdS[質の劣化がなく、ソーダガラス基板とC
dS膜間の密着性の優itた、いわゆる受光素子に適し
たCdS焼結膜が得られた。Therefore, from the above, annealing treatment in an air atmosphere at 460°C to 500°C for 10 minutes or less can produce CdS [soda glass substrates and CdS without deterioration in quality].
A CdS sintered film with excellent adhesion between dS films and suitable for a so-called light receiving element was obtained.
以上、説明したように、本発明は、最も安価なソーダガ
ラス基板上に、光導電体素子、いわゆる受光素子に適し
fILCdS膜をN、雰囲気中で焼結した後、このCd
S膜を望見雰囲気中で短時間のアニール処理を行うとい
った簡単な方法にてCdS iとソーダガラス基板の密
着性を著しく向上させたものでありその効果は極めて大
なるものである。As explained above, in the present invention, a fILCdS film suitable for a photoconductor element, a so-called light receiving element, is sintered in an N atmosphere on the cheapest soda glass substrate, and then the CdS film is sintered in an N atmosphere.
The adhesion between the CdSi and the soda glass substrate is significantly improved by a simple method of subjecting the S film to a short-time annealing treatment in a desired atmosphere, and the effect is extremely large.
第1図は、アニール処理時間に対する、ソーダガラス基
板とCdS膜の密着強度の状態を示す関係図、第2図は
、アニール処理時間に対する、CdS膜質の変化を電気
的特性変化として示す関係図である。Figure 1 is a relationship diagram showing the state of adhesion strength between the soda glass substrate and CdS film as a function of annealing treatment time, and Figure 2 is a relationship diagram showing changes in CdS film quality as changes in electrical characteristics as a function of annealing treatment time. be.
Claims (1)
ダーを加えて硫化カドミウムペーストを作り、該ペース
トをソーダガラス基板上に印刷し、これを予備乾燥した
後、窒素ガス雰囲気中で焼結して得られる硫化カドミウ
ム膜を、空気雰囲気中 。 に於て460℃〜500°Cの温度範囲で10分間以内
の熱処理を行うことを特徴とする硫化カドミウム焼結、
膜の熱処理方法。[Claims] Cadmium sulfide paste is made by adding cadmium chloride and an organic binder to cadmium sulfide powder, and the paste is printed on a soda glass substrate, and after pre-drying, it is placed in a nitrogen gas atmosphere. Cadmium sulfide film obtained by sintering in an air atmosphere. Cadmium sulfide sintering, characterized in that heat treatment is performed within 10 minutes at a temperature range of 460 ° C to 500 ° C,
Membrane heat treatment method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17431483A JPS6065723A (en) | 1983-09-22 | 1983-09-22 | Heat treatment of sintered film of cadmium sulfide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17431483A JPS6065723A (en) | 1983-09-22 | 1983-09-22 | Heat treatment of sintered film of cadmium sulfide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6065723A true JPS6065723A (en) | 1985-04-15 |
Family
ID=15976483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17431483A Pending JPS6065723A (en) | 1983-09-22 | 1983-09-22 | Heat treatment of sintered film of cadmium sulfide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6065723A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5299038A (en) * | 1991-01-28 | 1994-03-29 | Kabushiki Kaisha Toshiba | LCD with heat conductor from light source to separate portion of light guide |
-
1983
- 1983-09-22 JP JP17431483A patent/JPS6065723A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5299038A (en) * | 1991-01-28 | 1994-03-29 | Kabushiki Kaisha Toshiba | LCD with heat conductor from light source to separate portion of light guide |
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