JPS6066312A - Manufacturing method of thin film head - Google Patents
Manufacturing method of thin film headInfo
- Publication number
- JPS6066312A JPS6066312A JP17337483A JP17337483A JPS6066312A JP S6066312 A JPS6066312 A JP S6066312A JP 17337483 A JP17337483 A JP 17337483A JP 17337483 A JP17337483 A JP 17337483A JP S6066312 A JPS6066312 A JP S6066312A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- manufacturing
- film head
- head
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000010409 thin film Substances 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 3
- 230000007261 regionalization Effects 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 229920001721 polyimide Polymers 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000696 magnetic material Substances 0.000 description 6
- 229910000815 supermalloy Inorganic materials 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229910000702 sendust Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、耐熱性感光有機物を用いることを特徴とする
薄ＰＭヘッドの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a thin PM head characterized by using a heat-resistant photosensitive organic material.
従来、光にｊ摸ヘッドを作製する場合、基板全ＩＬｊに
磁性体を堆積させ、その上部にホトレジストをバターニ
ングしてパターン以外の不要部をエツチングすることに
より作製する方法と、あらかじめ不要部にホトレジスト
をバターニングしておいて、基板全曲にイ３ヱ性体を堆
積させ、不要部のレジストパターンと同時にレジスト上
の磁性体を除去することにより？Ｊる作製方法があるが
、前者のポトレジストパターン以外の不要１Ｘｆ（をエ
ツチング除去する方法は、エツチング液によりパターン
のエツジがどうしても損なわれてしまう。エツジが損な
われると薄膜磁性体の場合、磁壁の移動が太き（妨げら
れ、薄膜ヘッドの伽能にＪと；影響を及ばず。このため
この方法は薄１ｉ４４ヘッドｋ ’１１造する方法とし
ては好ましくない。また前者の間ｔｅｌ ’？ｉ： ｆ
」’（決する方法としては後者の方法があるが、この（
、シ合磁（ｉ１体を１．（Ｌ債する工程に於て、実１□
、１はパーマロイ４“、をスパッタ法で堆積させている
。この１１５スパッタ時には３００℃以上の熱をかけな
いと良好なイ識気’４５’ ｔ’１をイイした薄ＪＮは
得られない。しかし、この３００℃という温夏はレジス
トを大きく損ない、レジスト除去が不可能になってしま
う欠点がある。このためこの方法を用いる場合はＪＭの
磁気ｑ、Ｊ性を１と１化させても２００℃以下で行なわ
なりれはならない。本発明に於ては上記欠点を除去する
製造方法を提供するもので、感光性有様物（レジスト等
ンのかわりに、耐熱性感光有機物を用いることにより、
スパッタ時にも４００ ’Ｃ程度熱をかけても何ら［副
１．，１なく、スパック後も除去〃Ｉ容易にできるもの
である。Conventionally, when producing an optical J-imitation head, there are two methods: depositing a magnetic material on the entire substrate ILj, patterning photoresist on top of it, and etching unnecessary parts other than the pattern; By patterning the photoresist, depositing an ionic material on the entire surface of the substrate, and removing the magnetic material on the resist at the same time as the unnecessary portions of the resist pattern? There is a fabrication method called J, but in the former method of etching away unnecessary 1Xf (other than the photoresist pattern), the edge of the pattern is inevitably damaged by the etching solution.If the edge is damaged, in the case of a thin film magnetic material, the domain wall The movement of the thin film head is obstructed and does not affect the performance of the thin film head.For this reason, this method is not preferred as a method for building a thin 1i44 head. : f
''(The latter method is a way to decide, but this (
, In the process of bonding i1 body to 1.(L bond, real 1 □
, 1 is permalloy 4", which is deposited by sputtering. During this 115 sputtering, a thin JN with a good consistency '45't'1 cannot be obtained unless heat is applied to 300° C. or higher. However, this hot summer of 300 degrees Celsius greatly damages the resist, making it impossible to remove it.For this reason, when using this method, even if the magnetic q and J properties of JM are set to 1, The temperature must not exceed 200°C.The present invention provides a manufacturing method that eliminates the above drawbacks by using a heat-resistant photosensitive organic material instead of a photosensitive substance (such as a resist). ,
Even when heated to about 400'C during sputtering, no damage occurs [Vice 1. , 1, and can be easily removed even after spacking.
以下、本発明について実施例及び図で説明する実施例１
チタバリ基板上１にアルミを１μｍの厚みでスパッタし
、フォトエツチング加工により５μｍ １ｉｉｉ＋１の
下Ｊｉ部のコイル２を作製した。次に絶縁膜３として二
酸化ケイ累企１μｍの厚みでスパッタを行ナイ、更に二
酸化ケイ素の上部に感光性ポリイミド樹脂をスピンナー
により塗布し、必要な磁性体パターン以外のスペースに
ポリイミド４が残る様に感光し形成した。形成したポリ
イミドのパターンを乾燥機に入れ、１５０’ＣＸ３０分
、２０’０℃×６０分、３００”ｃＸ３０分、熱処理を
行なった。このポリイミドパターンの形成された基板全
面に、スパッタでスーパーマロイ５を５００ＯＡ堆積さ
せ、スパッタ後、ヒドラジン系の液Ｖこ浸し、スーパー
マロイが上ｂｉｓに付着したポリイミドのパターンを溶
解した。この時のスーパーマロイの動板温度は４００℃
であったがポリイミドは何ら問題なく除去できた。更に
また上部に絶オノ′、膜６として二酸化ケイ素を１μｍ
の厚みでスパッタし、スパック後、絶縁膜３，６を同１
１９にエツチングし、下ＩＷ部ココイルコンタクト部を
露出させた。次（Ｃ下層部コイルと同様の方法により上
１？’ｉ ＋ｊｌＳコイル７を形成し、上層部、下層部
のコイル企液続した。Hereinafter, the present invention will be explained with examples and drawings. Example 1 Aluminum was sputtered to a thickness of 1 μm on a Chitaburi substrate 1, and a 5 μm 1iii+1 lower Ji portion coil 2 was produced by photoetching. Next, silicon dioxide was sputtered to a thickness of 1 μm as an insulating film 3, and photosensitive polyimide resin was applied on top of the silicon dioxide using a spinner, so that polyimide 4 remained in the space other than the required magnetic pattern. It was formed by exposure to light. The formed polyimide pattern was placed in a dryer and heat treated at 150'C x 30 minutes, 20'0C x 60 minutes, and 300''C x 30 minutes. Super Malloy 5 was applied by sputtering to the entire surface of the substrate on which the polyimide pattern was formed. After sputtering, 500 OA of supermalloy was deposited, and after sputtering, the polyimide pattern with supermalloy attached to the upper bis was dissolved by dipping in hydrazine-based liquid V. At this time, the moving plate temperature of supermalloy was 400°C.
However, the polyimide could be removed without any problems. Furthermore, silicon dioxide is coated with a thickness of 1 μm on top as a film 6.
After sputtering, insulating films 3 and 6 are sputtered to a thickness of
19 to expose the lower IW cocoil contact part. Next, the upper 1?'i+jlS coil 7 was formed in the same manner as the lower layer coil, and the upper and lower coils were connected.
この基板上に保Ｍμ膜として二酸化ケイメ（８を２μｍ
の厚みでスパッタを行ない、研Ｉホ加工後、γ−シ膜磁
気ヘッドとしてのＨ′１２価をした。このできたヘッド
は従来の例えば前者の方法により得られたヘッドに比べ
、出力でも０．１ ｍ Ｖ 〜０．２ ｍＶ上１ｉｉＪ
ッていた。On this substrate, a 2 μm thick film of carbon dioxide (8) was applied as a Mμ film.
Sputtering was carried out to a thickness of , and after polishing, the H'12 value was applied as a γ-film magnetic head. This head has an output that is 0.1 mV to 0.2 mV higher than the conventional head obtained by the former method, for example, by 1iiJ.
It was.
実施例２
実施例１と同様の方法で作製した。この時の下層、上層
部のコイルの栃料はＡｔに４％Ｏｕをドープしたものを
用いた、また絶Ａ’Ｊ Ｉｊ／％には酸化アルミニウム
、に性体にはパーマロイを用いたがこれも従来のｕ遣方
法に比べ磁気特性の良好なヘッドが得られた。Example 2 It was produced in the same manner as in Example 1. At this time, the material for the lower and upper coils was At doped with 4% Ou, aluminum oxide was used for the absolute A'J Ij/%, and permalloy was used for the neutral body. Also, a head with better magnetic properties was obtained compared to the conventional U method.
以上、実力温例に示す如き本発明゛０製造方法は、磁性
体のパターン形成の際、悪影υを与えンよいため、スパ
ッタ１１なに付着した詩の瓶の磁気特性を劣化させるこ
となく、高性能の薄膜ヘッドを製造できるものである。As described above, the manufacturing method of the present invention as shown in the actual temperature example does not cause any bad influence υ during pattern formation of the magnetic material, so it does not cause deterioration of the magnetic properties of the poetry bottle attached to the spatter 11. , it is possible to manufacture a high-performance thin film head.
また、実施例にはコイル材料として、Ａｔ、Ａｌ−０ｕ
ｌ、か記載してないが他にＡｕ、Ｏｕ、ＡＡ−ｓｉ、も
可能であり、更に磁性体においても、センダスト、スー
パーセンタストも同様である。更にまた、耐熱性感光有
機物についても、ポリイミド系だけでなく、耐熱性があ
り、感光でき、溶解もしくは、剥Ｆできるものであれば
どの様なものでも可能である。In addition, in the examples, At, Al-0u
Although not mentioned, Au, Ou, and AA-si are also possible, and the same is true for magnetic materials such as Sendust and Super Centast. Furthermore, the heat-resistant photosensitive organic material is not limited to polyimide, but may be any material as long as it is heat-resistant, photosensitive, and can be dissolved or peeled off.
［起曲のｆ＋？を単な説明
第１図（α）〜Ｃｈ）は実施例１で作製した薄膜ヘッド
の製造工程の断゛面図である。[Starting f+? 1 (α) to Ch) are cross-sectional views of the manufacturing process of the thin film head manufactured in Example 1.
１・・・・・・基板 ２・・・・・・下層部コイル ６・・・・・・絶縁膜 ４・・・・・・耐熱性感光有機物 ５・・・・・・磁性体 ６・・・・・・絶縁膜 ７・・・・・・上層部コイル ８・・・・・・保疲膜 以 」二 出願人 林式会社丘・；（訪精工舎 代理人 弁理士 最上 務 （ＯＬ） （らン （Ｃ） ベー （わ （ｅン １図1... Board 2...Lower coil 6...Insulating film 4...Heat-resistant photosensitive organic substance 5...Magnetic material 6...Insulating film 7... Upper coil 8...Fatigue-retaining film 2 Applicant Hayashishiki Company Oka; (Waseikosha Agent Patent Attorney Mogami (OL) (Ran (C) Bae (circle (en) Figure 1
Claims (1)
絶縁層、上Ｊ・＋ｙコイル、保忌ｊル３を所定の形状に
胆次わ２ノ・１・ｊして得られる薄膜ヘッドに於て、前
記磁性Ｊ・１・ｊのパターン形成に耐ｆ（に？性感光有
機物を用いて、パターン形成を行なうことを特徴とする
薄膜ヘッドの製造方法。On the substrate are a lower coil, a first insulator J.:j, a magnetic layer, a second
In the thin film head obtained by successively cutting the insulating layer, the upper J. A method for manufacturing a thin film head, characterized in that pattern formation is performed using a photosensitive organic substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17337483A JPS6066312A (en) | 1983-09-20 | 1983-09-20 | Manufacturing method of thin film head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17337483A JPS6066312A (en) | 1983-09-20 | 1983-09-20 | Manufacturing method of thin film head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6066312A true JPS6066312A (en) | 1985-04-16 |
Family
ID=15959202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17337483A Pending JPS6066312A (en) | 1983-09-20 | 1983-09-20 | Manufacturing method of thin film head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6066312A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4972287A (en) * | 1987-07-01 | 1990-11-20 | Digital Equipment Corp. | Having a solenoidal energizing coil |
| US4985985A (en) * | 1987-07-01 | 1991-01-22 | Digital Equipment Corporation | Solenoidal thin film read/write head for computer mass storage device and method of making same |
-
1983
- 1983-09-20 JP JP17337483A patent/JPS6066312A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4972287A (en) * | 1987-07-01 | 1990-11-20 | Digital Equipment Corp. | Having a solenoidal energizing coil |
| US4985985A (en) * | 1987-07-01 | 1991-01-22 | Digital Equipment Corporation | Solenoidal thin film read/write head for computer mass storage device and method of making same |
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