JPS6067362U

JPS6067362U - sputtering equipment

Info

Publication number: JPS6067362U
Application number: JP15866083U
Authority: JP
Inventors: 高橋　正長
Original assignee: NEC Corp
Current assignee: NEC Corp
Priority date: 1983-10-15
Filing date: 1983-10-15
Publication date: 1985-05-13

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of drawings]

第１図は従来のスパッタリング装置の構造を示す断面図
、第２図は異常放電により導体薄膜の膜質が悪くなった
基板を示す平面図、第３図は従来のスパッタリング装置
のシャッター付近の構造を示す断面図、第４図は本考案
によるスパッタリング装置のシャッター付近の構造を示
す断面図、第５図は従来のスパッタリング装置のシャッ
ターの外観図、第６図は本考案によるスパッタリング装
置のシャッターの外観図であ、る。１・・・陰極、１ａ・・・磁石、２・・・シャッター、
２ａ・・・開口部、３・・・基板ホルダー、４・・・基
板、５・・・チャンバー、６・・・高周波電源、７・・
・ターゲット、８・・・導体薄膜、９・・・異常放電跡
、１０・・・捕捉板、ｎＣ・・・二次電子や二次負イオ
ン。Fig. 1 is a cross-sectional view showing the structure of a conventional sputtering device, Fig. 2 is a plan view showing a substrate whose conductive thin film quality has deteriorated due to abnormal discharge, and Fig. 3 is a structure near the shutter of a conventional sputtering device. 4 is a sectional view showing the structure near the shutter of the sputtering device according to the present invention, FIG. 5 is an external view of the shutter of the conventional sputtering device, and FIG. 6 is an external view of the shutter of the sputtering device according to the present invention. It's a diagram. 1... Cathode, 1a... Magnet, 2... Shutter,
2a...Opening, 3...Substrate holder, 4...Substrate, 5...Chamber, 6...High frequency power supply, 7...
- Target, 8... Conductor thin film, 9... Abnormal discharge trace, 10... Capture plate, nC... Secondary electrons and secondary negative ions.

Claims

[Claims for Utility Model Registration] 1. Using a cathode equipped with a magnet so that the direction of the magnetic field is perpendicular to the direction of the electric field and the lines of magnetic force begin and end at the target surface in the electrode space, and use a high-frequency power source as the sputtering power source. In the high-frequency magnetron sputtering apparatus, in order to prevent the material to be processed placed near the anode from being negatively charged, an opening in a shirt plate provided between the target and the material to be processed and having the same potential as the anode is provided. . A high-frequency magnetron sputtering apparatus, comprising a trapping means for trapping secondary electrons and secondary negative ions emitted from the target. 2. The high frequency magnetron sputter link device according to claim 1, wherein the trapping means is a trapping plate. 3. The high frequency magnetron sputtering apparatus according to claim 1, wherein the capturing means is a wire mesh stretched over the opening of the shutter.