JPS60736A - Formation of p-type sic electrode - Google Patents
Formation of p-type sic electrodeInfo
- Publication number
- JPS60736A JPS60736A JP58108583A JP10858383A JPS60736A JP S60736 A JPS60736 A JP S60736A JP 58108583 A JP58108583 A JP 58108583A JP 10858383 A JP10858383 A JP 10858383A JP S60736 A JPS60736 A JP S60736A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- electrode
- temperature
- alloy layer
- type sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】 イ） 産業上の利用分野 本発明はＰ型８１０の電極形成方法Ｃ二関する。[Detailed description of the invention] b) Industrial application field The present invention relates to method C2 for forming a P-type 810 electrode.
（ロ）従来技術
Ｐ型ＳｉＯの電極形成方法としては、第１図（二示す如
くＰ型Ｂ ｉ ０（１）上（＝ＡＩ！（アルミニウム）
と８１（シリコン）との組成比が約８９：１１となる合
金層（２）を形成し、その後９００℃〜１０００℃の高
温真空中で５〜１０分間熱処理を施して形成する方法が
既に提案されている。(b) Conventional technology As a method of forming an electrode of P-type SiO, as shown in FIG.
A method has already been proposed in which an alloy layer (2) is formed with a composition ratio of about 89:11 and 81 (silicon), and then heat treatment is performed in a high-temperature vacuum at 900°C to 1000°C for 5 to 10 minutes. has been done.
然るに斯る方法（二より得られた電極の電流電圧特性は
第２図に示す如く良好なものとなるが、その形状は第６
図に示す如（変形してしまう。これは上記組成比のＡＪ
−８１合金顔（２）の共融温度が５７７℃と上記熱処理
温度に比して小さいため、上記熱処理時に上記合金層（
２）が溶融し、これに伴なってＡＩ！が蒸発してしまう
ためである。However, although the current-voltage characteristics of the electrode obtained using this method (2) are good as shown in FIG.
As shown in the figure (deformation occurs. This is because the AJ of the above composition ratio
Since the eutectic temperature of -81 alloy face (2) is 577°C, which is lower than the above heat treatment temperature, the above alloy layer (
2) melts, and along with this, AI! This is because it evaporates.
（ハ）発明の目的
本発明は斯る点Ｃ二鑑みてなされたもので、オーミック
特性が良好でかつ熱処理時（二形状が変形しないような
Ｐ型８１０の電極の形成方法を提供せんとするものであ
る。(c) Purpose of the Invention The present invention has been made in view of point C2, and it is an object of the present invention to provide a method for forming a P-type 810 electrode which has good ohmic characteristics and whose shape does not deform during heat treatment. It is something.
に）発明の構成
本発明の特徴はＰ型８１０上にＡＪ−８１重金属を形成
した後熱処理を施して電極を形成するに際して上記合金
層の共融温度が上記熱処理時の温度より人となるよう（
二上記合金層を構成していることＣ；ある。B) Structure of the Invention The feature of the present invention is that when the AJ-81 heavy metal is formed on the P-type 810 and then heat-treated to form the electrode, the eutectic temperature of the alloy layer is lower than the temperature during the heat treatment. (
2.Constituting the above-mentioned alloy layer C: Yes.
ネ）実施例
本発明の一実施例としては第１図に示した合金！１（２
）をＡｌと８１との構成比（重量比）が６５＝３５とな
るようにしたものがある。尚、斯る合金層（２）の共融
温度は約−９００℃である。N) Example An example of the present invention is the alloy shown in Figure 1! 1(2
) in which the composition ratio (weight ratio) of Al and 81 is 65=35. Incidentally, the eutectic temperature of the alloy layer (2) is approximately -900°C.
第４図は本実施例構成において、その熱処理を変化させ
た際の夫々の電流電圧特性を示す。具体的には同図中（
Ｉｌは上記熱処理を’ｌＸ １Ｑ−６Ｔｏｒｒ以下の真
空中で８５０℃、１０分間行７よったものの結果を示し
、（損はｌＸＩＤ’−６Ｔｏｒｒ以下の真空中で９００
℃、１０分間行〕よったものの結果を示す。FIG. 4 shows current-voltage characteristics when the heat treatment is changed in the configuration of this embodiment. Specifically, in the same figure (
Il shows the result of the above heat treatment performed at 850°C for 10 minutes in a vacuum of 1X 1Q-6 Torr or less, and (loss is 900°C in a vacuum of 1
℃ for 10 minutes] The results are shown below.
斯る結果より明らかな如く、上記ｔＵ＋の熱処理条件で
形成された電極の方がオーミック特性が良好となってい
る。斯るオーミック特性は熱処理時の温度と時間との積
で与えられるものであり、斯る積の値が大である程オー
ミック特性が良好となることが確認されている。従って
上記＋１１の条件においても熱処理時間を長くすること
によりオーミック特性は改善され、上記ｔＵｔの条件に
おいても熱処理時間を長くすること（二より一層オーミ
ック特性が良好となる。As is clear from these results, the electrode formed under the heat treatment conditions of tU+ has better ohmic characteristics. Such ohmic characteristics are given by the product of temperature and time during heat treatment, and it has been confirmed that the larger the value of the product, the better the ohmic characteristics. Therefore, even under the condition of +11, the ohmic characteristics are improved by increasing the heat treatment time, and also under the condition of tUt, the ohmic characteristics are improved by increasing the heat treatment time (2).
また、上記山（ＩＩＩの条件で熱処理された電極の形状
は熱処理前と変わらなかった。これは上記熱処理温度が
合金＠（２）の共融温度（１比して低く、従来技術の項
で既述したような現象が生じないためである。In addition, the shape of the electrode heat-treated under the conditions of mountain (III) was the same as before heat treatment. This is because the heat treatment temperature was lower than the eutectic temperature (1) of alloy @(2), and This is because the phenomenon described above does not occur.
本発明の第２の実施例とし℃は第１図口承した合金層（
２）をＡＩ！と８１との構成比が４５：５５となるよう
Ｃ二構成し、Ｉ Ｘ １０−６Ｔｏｒｒ以下の真空中で
１０００℃、１０分間熟処理する。In the second embodiment of the present invention, the temperature is as shown in Figure 1.
2) with AI! and 81 in a composition ratio of 45:55, and ripened at 1000° C. for 10 minutes in a vacuum of I x 10 −6 Torr or less.
第５図は斯る処理により得られた電極の電流−電圧特性
を示し、これより斯る電極のオーミック特性が非常（＝
優れていることがわかる。またこのとき斯る電極の形状
は熱処理前と熱処理後とで変化しなかった。これは上記
合金層（２）の共融温度が約１１６０℃であるためであ
る。Figure 5 shows the current-voltage characteristics of the electrode obtained by such treatment, and it shows that the ohmic characteristics of the electrode are very high (=
It turns out that it is excellent. Further, the shape of the electrode did not change between before and after the heat treatment. This is because the eutectic temperature of the alloy layer (2) is about 1160°C.
このよう（二本実施例Ｃ二より得られた電極はオーミ７
り特性が良好であり、かつその形状は加熱時（：変形す
ることはない。In this way, the electrode obtained from Example C2 was ohmic 7
It has good properties and its shape does not deform when heated.
尚、既述した如く、オーミンク特性の良否は熱処理温度
と処理時間とへ−より決疋されるものであり、また熱処
理温度は合蚊層（２）の共融温度礪こより限定されるも
のであり、更（二半尋体製造σ）プロセスじおいて斯る
電極形成における熱処理時間は実用的１″−）ま長（と
も１０分程度が好まじすへ〇従って斯る点７総合すると
、上記合金層（２）甲σ）Ａ１３０）糸且成比は６５チ
以下が好ましく、斯る条件下ではπ〜処理条件が９００
℃以上、１０分間以下で良好なオーミック特性を有し、
かつ形崩ＪｔのなＶ）′？ａ極力′）形成できる。As mentioned above, the quality of the ohmink properties is determined by the heat treatment temperature and treatment time, and the heat treatment temperature is limited by the eutectic temperature depression of the synthetic layer (2). In addition, the heat treatment time for forming the electrode in the process of manufacturing σ is approximately 10 minutes (approximately 10 minutes). The above-mentioned alloy layer (2)
It has good ohmic properties at temperatures above ℃ and below 10 minutes,
And the shapeless Jt V)'? a) can be formed as much as possible.
またＡＪ−ｓｔ合金論のｈｐ組成比か６５％以下と少な
くなると合金層上へのワイヤボンディングが内錐（＝な
るため、上記組成を有した合金層７電極として用いる際
には斯る合金層上ｃＡ７３もしくはＡｌ−Ａｕ（金）合
金ｌｆｉを積層することカー好ましい。In addition, when the HP composition ratio of AJ-st alloy theory is reduced to 65% or less, the wire bonding onto the alloy layer becomes an inner cone (==), so when using the alloy layer 7 as an electrode with the above composition, such an alloy layer It is preferable to laminate cA73 or Al-Au (gold) alloy lfi on the top.
（へ）発明の効果
本発明によｉｚばメーーミッグ特性が良好で力・つ熱処
理時に変形しないＰ型５ｉＯａｘ極を得ることができる
。(f) Effects of the Invention According to the present invention, it is possible to obtain a P-type 5iOax pole which has good Mehmig properties and does not deform during force/heat treatment.
第１図はＰ型８１０用の電極を説明するための断面図、
第２図、第４図、第５図は電流−電圧特性を示す特性図
、第３図は従来例を示す断面図である。
（１）・・・Ｐ型Ｅ３１Ｃ，（２）・・・ＡＩ！−Ｂｉ
合金層。
第１図
第３図FIG. 1 is a cross-sectional view for explaining the electrode for P type 810,
FIG. 2, FIG. 4, and FIG. 5 are characteristic diagrams showing current-voltage characteristics, and FIG. 3 is a sectional view showing a conventional example. (1)...P type E31C, (2)...AI! -Bi
Alloy layer. Figure 1 Figure 3
Claims (1)
後熱処理を施して電極を形成するζ二際して、上記合金
層の共融温度が上記熱処理時の温度より大となるよう（
二上記合金層を構成していることを特徴とするＰ型Ｓｉ
Ｏの電極形成方法。(1) After forming the P-type 810 (=AI!-81 alloy layer, heat treatment is performed to form the electrode.) In this case, the eutectic temperature of the alloy layer becomes higher than the temperature during the heat treatment. Yo(
2. P-type Si comprising the above-mentioned alloy layer
O electrode formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58108583A JPS60736A (en) | 1983-06-16 | 1983-06-16 | Formation of p-type sic electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58108583A JPS60736A (en) | 1983-06-16 | 1983-06-16 | Formation of p-type sic electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60736A true JPS60736A (en) | 1985-01-05 |
| JPH0519808B2 JPH0519808B2 (en) | 1993-03-17 |
Family
ID=14488484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58108583A Granted JPS60736A (en) | 1983-06-16 | 1983-06-16 | Formation of p-type sic electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60736A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62192525U (en) * | 1986-05-29 | 1987-12-07 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4841070A (en) * | 1971-09-27 | 1973-06-16 |
-
1983
- 1983-06-16 JP JP58108583A patent/JPS60736A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4841070A (en) * | 1971-09-27 | 1973-06-16 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62192525U (en) * | 1986-05-29 | 1987-12-07 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0519808B2 (en) | 1993-03-17 |
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