JPS607384B2 - Glass-sealed semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a bonding surface between a ceramic base housing a semiconductor pellet and a cover, which is sealed with glass, and one end of which is electrically connected to the semiconductor pellet. The present invention relates to a glass-sealed semiconductor device having a structure in which the edge is led out through the bonding surface.

In this type of glass-sealed semiconductor device, a glass sealing layer is conventionally formed on the entire surface of the ceramic bonding surface.

However, such a sealing structure has the disadvantage that cracks are likely to occur, especially in those with a large number of pins, due to the difference in coefficient of thermal expansion between the lead frame and the glass sealing layer. The occurrence of cracks is undesirable because it leads to breaking the sealing and accelerates the deterioration of the semiconductor device. An object of the present invention is to provide a glass-sealed semiconductor device that is less prone to cracking due to the difference in thermal expansion coefficient between a lead frame and a glass sealing layer, even in a device with a large number of pins.

As the contact area between the lead frame and the glass sealing layer increases, the stress at the contact area due to the difference in thermal expansion coefficient increases. Based on the idea that the contact area between the lead frame and the glass sealing layer should be as small as possible, the glass sealing layer is not applied to the entire surface of the bonding surface between the ceramic base and the cover, and the semiconductor pellet is mainly arranged. The above object has been achieved by applying the adhesive only to the periphery of the joint and the outer periphery of the joint surface.

Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

The figure shows a state of one manufacturing process of a semiconductor device according to the present invention.

11 is a ceramic base.

A semiconductor pellet (not shown) is housed in the central recess 12 of the base 11. A lead frame 13 is electrically connected to the semiconductor pellet, arranged along the upper surface of the base 11, and led out. On the upper surface of the base 11, glass sealing layers 16 and 17 are applied only around the periphery of the central recess 12 in which the semiconductor pellet is housed and the outer peripheral green area, and the glass sealing layers 16 and 17 are connected to the entire circumference with a relatively narrow width, and other areas are applied as needed. Only dotted glass layers 18 are scattered at appropriate locations, and no glass sealing layer is applied to the remaining portions. Base like this 1 1
A ceramic cover (not shown) having substantially the same planar shape as this is placed thereon to complete the desired glass-sealed semiconductor device. In such a configuration, both the glass sealing layers 16 and 17 naturally perform a sealing action, but if anything, the sealing action is mainly carried out by the inner sealing layer 16, while the outer sealing layer 16 is responsible for the sealing action. Layer 17 primarily serves to hold lead frame 13 in place. Also,
The glass layer 18 primarily acts as a substrate. As can be clearly seen from the figure, in the semiconductor device of the present invention having the above configuration, the contact area between the lead frame 13 and the glass sealing layers 16 and 17 is reduced as much as possible, so that the difference in thermal expansion coefficient between the two is reduced. cracks are significantly less likely to occur.

Therefore, it is possible to increase the number of pins, for example, to several tens of pins or more.

[Brief explanation of drawings]

The figure is a perspective view showing a state in a manufacturing process of an embodiment of a glass-sealed semiconductor device according to the present invention. Explanation of symbols, 11...

Claims (1)

[Claims] 1. The bonding surface between the ceramic paste housing the semiconductor pellet and the cover is glass-sealed with a glass sealing layer, and the other end of the lead, one end of which is electrically connected to the semiconductor pellet, is passed through the bonding surface to the outside. In a glass-sealed semiconductor device configured to lead to
A glass-sealed semiconductor device characterized in that the glass-sealing layer in a portion where the leads are provided is formed only on a part of the bonding surface.