JPS60745A - Apparatas for manufacturing semiconductor wafer - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] [Technical field of invention] The present invention relates to a semiconductor wafer manufacturing apparatus.

[Background technology of the invention]

Conventionally, semiconductor sea urchins have been manufactured by slicing a cylindrical single crystal obtained by the Czochralski method or the like into pieces of a predetermined thickness. Semiconductor sea urchin manufacturing equipment that performs such slicing processing has a cutting edge on the inner peripheral edge of a penetration hole formed in the center of the annular base, and a cutting edge is provided at the inner peripheral edge of the penetration hole formed in the center of the annular base to slice the single crystal body inserted into the penetration hole. The slicing process is performed by rotating the disk and pressing the number on the cutting edge while flowing cooling water. The slicing process is performed after the base plate provided on the outer circumference of the disc has been stretched horizontally. The horizontal state of the base after tensioning, that is, the flatness of the base, is determined by placing a dial goo with a roller on the cutting edge facing the adjusted base tensioning gel from the center to the cutting edge. This is done by examining the variation in the distance between.

[Problems with background technology]

In the semiconductor sea urchin manufacturing equipment that uses a dial dirge with a roller to measure the flatness of the substrate after being stretched, the flatness of the substrate before the slicing process is measured by the first
Figures (A) ([3) (C) (D) and Figure 2 (G)
(B) This is the passage shown in (C).

FIG. 3 shows a plan view of the stretched base 1. 2 in the figure is a cutting edge portion made of a diamond blade or the like. Fig. 1 (The flatness is measured from the center point 3 of the base 1 shown in Fig. 3 along a predetermined outer peripheral direction (temporarily downward direction) from the distance 5111111 (Ll), 50
Each point of m (L2) and 13011111 (Ll) is shown according to the amount of displacement from the reference plane. Regarding the downward direction (4), it can be seen that the base surface rises as it moves away from the center point 3 in the outer circumferential direction. Similarly, Figure 1 (day) shows the undulations of each point (Ll) (L2) (Ls) from the center point 3 to the left (119), and gradually becomes lower from the reference plane toward the outer periphery. It can be seen that Fig. 1c) similarly shows the undulations of the base surface from the center point 3 upward (along C'l), and it can be seen that it gradually becomes higher from the reference plane toward the outer periphery. , Fig. 1 (0 is the case where the center point 3 is along the right direction (6), and it can be seen that it gradually becomes lower from the reference plane toward the outer circumference. Also, Fig. 2 (At is the case where the center point 3 is along the right direction (6) Figure 2 (B) shows the undulations along the circumference and direction at a point 50 gourds from the cutting edge part 2, and Figure 2 (B) shows the undulations along the circumference and direction at a point 50 gourds from the cutting edge part 3. It shows the undulations along the circumferential direction at the point at 130 degrees.As is clear from these figures,
It can be seen that the area near the outer periphery has many undulations along the circumferential direction.

In conventional semiconductor wafer manufacturing equipment, even after adjusting the flatness, there is a large amount of damage to the substrate as shown in (C) in Figure 1 (Aω) (C) (1)) and Figure 2 (C)). There are ups and downs. For this reason, when we examine the state of the wafers obtained by slicing from semiconductor single crystals using conventional semiconductor wafer manufacturing equipment, we find that there are extremely large variations, as shown by characteristic line (1) in Figure 4. It shows. As a result, there was a problem of lower yield.

[Purpose of the invention]

An object of the present invention is to provide a semiconductor single crystal cutting device that can easily produce a highly flat wafer with little warpage and achieve an improved yield. [Summary of the Invention] The present invention provides a flatness measuring device to measure the flatness of the base supporting the cutting edge, thereby easily manufacturing wafers with high flatness without any rips, and achieving an improvement in yield. This is a semiconductor single crystal cutting device.

[Embodiments of the invention]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 5(B) is an explanatory diagram showing a schematic configuration of an embodiment of the present invention. 10 in the figure is a base.

A base 11 made of an annular disk as shown in FIG. 6 is provided on the base 10. As shown in FIG. On the outer peripheral edge of the base 11,
For example, for tightening, base-stretching members 12 made of dart are arranged at predetermined intervals. In the center of the base 11,
A penetration hole 14 is formed into which a single crystal body 13, which is an object to be processed, is inserted. A cutting edge portion 15 made of a diamond blade or the like is formed at the inner peripheral edge of the penetration hole 14 . A flatness measuring device 16 is provided above the base 11 so as to be movable along the circumferential direction. The base 11 is configured to freely move in the diametrical direction by a drive mechanism (not shown).

Here, the flatness measuring device 16 is configured with a distance measuring device such as a laser or a sound wave, and measures the distance between the base surface and the flatness measuring device 16 to determine the flatness of the base surface. I'm starting to look into it.

According to the semiconductor manufacturing apparatus 20 configured in this way, as shown in the fifth crystal, the board 11 in the slack state is tightened with the board tensioning member 12 using, for example, the hexagonal wrench 21. This puts you in a tense state. This base laying operation is performed over the entire circumference of the base 11. When the base tensioning operation is completed, as shown in FIG. It is measured by the measuring device 16 and confirmed when it reaches a predetermined value. After that, the cylindrical single crystal body 13, which is the object to be treated, is inserted into the penetration hole 14, and the single crystal body is removed by rotating the base 11 and moving it along the diameter direction while flowing cooling water. 13 is subjected to slicing processing. As a result, a semiconductor wafer with a predetermined thickness is obtained.

In this way, according to this 9 semiconductor wafer manufacturing apparatus 2°,
Since the base plate installation operation is performed while observing the flatness of the base 11 using the flatness measuring device 16, the flatness of the base 11 is observed using the flatness measuring device 16, so the flatness of the base 11 is measured using the flatness measuring device 16.
As shown in (c) (o) and Figure 8), the flatness of the substrate 11 before the slicing process is extremely high. Here, FIG. 7 (A) (B) (C) (6) shows the base 1
1 from the center point 23 (downward (C), leftward (n), rightward (flatness along the mouth) from the cutting edge part 15 to 5
111111 (Ll), 50 tan (Lx), 1
This is a survey based on the point at 30 wm (L3) (see Figure 6). The flatness in the diametrical direction is
It can be seen that AI...(D) is also set to an extremely high degree of flatness. In addition, Figure 8 Prisoner Small) (C) is L1
The flatness along the circumferential direction of each point, L2 point, and L3 point was investigated. It can be seen that all of the flatnesses are set to a much higher degree of flatness than the conventional one shown in FIG.

As shown by the characteristic line (II) in FIG. 4, the anti-chip state of the semiconductor wafer obtained by slicing the substrate 11 stretched to an extremely high degree of flatness is different from that of the conventional one. It can be seen that the value is much smaller.

As a result, according to this semiconductor wafer manufacturing apparatus 20,
By stretching the base 11 with high flatness, the resistance during slicing can be reduced, and the life of the cutting edge portion 15 can be extended. Also,
There is no need for a gouillage with a roller, and work efficiency can be improved. Moreover, it is possible to easily manufacture semiconductor wafers with a small cross-section and improve the yield F)k.

〔Effect of the invention〕

As explained above, according to the semiconductor single crystal cutting apparatus according to the present invention, it is possible to easily produce wafers with high flatness and no undulations, thereby achieving an improvement in yield.

[Brief explanation of drawings]

Figures 1 and 7 are characteristic diagrams showing the flatness of the base in the diametrical direction, Figures 2 and 8 are characteristic diagrams showing the flatness of the base in the circumferential direction, and Figures 3 and 6 are characteristic diagrams showing the flatness of the base in the circumferential direction. , a plan view of the substrate, and FIG. 4 is a characteristic diagram showing the relationship between warpage and number of semiconductor wafers.
FIG. 5 is an explanatory diagram showing a schematic configuration of an embodiment of the present invention. DESCRIPTION OF SYMBOLS 10... Base, 11... Base, 12... Base adjustment member, 13... Single crystal, 14... Penetration hole, 150
0. Blade edge portion, 16... Flatness measuring device, and... Semiconductor wafer manufacturing equipment, 21... Hexagonal wrench, 23...
center point O

Claims (1)

[Claims] A base made of a yield-shaped disk, a penetration hole for the object to be processed formed in the center of the base, a cutting edge formed at the inner peripheral edge of the base facing into the penetration hole, and an outer peripheral edge of the base a flatness measuring device that faces the surface of the base and is movable along the circumferential direction; A semiconductor wafer having a moving drive mechanism.
manufacturing equipment.