JPS6076751A - Apparatus for producing electrophotographic sensitive body - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a t-pole groove construction for an electrophotographic photoreceptor manufacturing apparatus ρ.

Fig. 1 shows a schematic diagram of a conventional electrophotographic photoreceptor manufacturing apparatus. Board holder, 4
5 is a high frequency power supply, 5 is a gas cylinder such as mono 7 run, hydrogen, siphoran, etc., 6 is a mass flow controller to precisely control the gas flow rate, a vacuum chamber 1 is connected to a high vacuum exhaust system 8 through the main pulp 7, and , and is connected through a roughing valve 9 to a low vacuum exhaust system 10 consisting of a mechanical booster pump and a rotary pump.

As for the operating method, first, a four-electroconductor substrate is set on the substrate holder 6, and the vacuum is evacuated to a predetermined degree of vacuum using an evacuation system. Next, the flow is controlled by a flow controller of a predetermined gas such as monosilane, and a cylinder circumference e is applied to the electrode 2 while maintaining a predetermined pressure exclusively in the vacuum chamber 1 through the gas inlet. , a plasma is generated and an amorphous semiconductor is grown on the conductive substrate.

At this time, the frequency of the applied high frequency is high (number of waves MH2)
When the discharge power is small, among the positive ions and electrons decomposed by the applied high-frequency electric field, the lighter-mass positive ions are accelerated by the electric field; It is believed that ions cannot follow the reversal of the high-frequency electric field and will remain around iiZ no matter how long.

However, high-frequency power supplies are large, expensive, and difficult to handle, so lower frequencies are desired.Also, with regard to discharge power, there is a need for lower product prices. -Therefore, it is necessary to increase the deposition rate and shorten the deposition time, and it is necessary to increase the discharge power to improve the deposition rate.

Due to these requirements, when using a low frequency power supply, the
The time for the A1 positive ions to be accelerated by the electric field in the same direction becomes longer, and the mobility of the positive ions also increases. Also,
Increasing the discharge power also promotes decomposition, increases the absolute number of decomposed electrons and positive ions, and increases their mobility.

As a result, even when using a low frequency power supply, the emission
Even when the power is increased in °C, the temperature rises due to collision of decomposed and accelerated electrons and positive ions with the film surface, and film sputtering, which is thought to be caused by positive ions, becomes noticeable.

In conventional equipment, electrons and positive ions decomposed and accelerated by high frequency directly collide with the film surface, so when a low frequency power source is used or when the discharge power is increased to increase the film formation rate. However, it was difficult to fabricate a photoreceptor with good film quality due to a noticeable rise in substrate temperature and film sputtering. By arranging an electrode with a large number of holes and keeping the electrode and the substrate holder at the same potential, or by applying an appropriate bias voltage, it is possible to prevent sputtering of the film by decomposed and accelerated positive ions, or by collisions of electrons and positive ions. The entire purpose is to reduce the rise in substrate temperature.Next, embodiments of the present invention will be explained in detail with reference to the drawings.

Embodiment 1 FIG. 2 is a schematic diagram of an embodiment based on the present invention. show. Of these, (a) is a plan view, and (b) is a front view.

In FIG. 2, 11 is a vacuum chamber, 12 is 28 electroconductive groups 44
It is attached to the board holder to be set.

Reference numeral 13 is a high frequency power source that applies high voltage ek to the electrode 14.

Reference numeral 15 designates an electrode having a net shape or multiple holes according to the present invention, and is maintained at the same potential as the sample holder. 16
1 is an exhaust port, and 17 is a gas inlet.

By placing the above-mentioned impurity electrode around the substrate holder and keeping it at the same potential as the sample holder, some of the electrons and positive ions that are decomposed and accelerated will collide with the electrode, so it will not be directly affected. can reduce the number of electrons and positive ions that collide with the membrane surface.

In the conventional device shown in Fig. 1, 10μrn, /H
When the discharge power was increased to obtain the above film-forming rate, it was not possible to maintain the substrate temperature at a predetermined value (≦200°C), but with the device having the electrode structure shown in Figure 2, Since the change in substrate temperature during the process was small, the substrate temperature could be kept within a predetermined value. Furthermore, a photoreceptor with a beautiful appearance and almost no pinholes was obtained. Regarding the photosensitive characteristics, the film formation time was 2 hours, the film thickness was ~20 μm, and the charging potential was ~500v1 Elh ~0.2 ad/8
The characteristics of rg were obtained.

Example 2 FIG. 3 shows a schematic diagram of an electrode structure of an example based on the present invention.

In FIG. 6, 18 is a substrate holder for holding a conductive substrate, and 19 is a high frequency power source that applies high frequency to the electrode 20. Reference numeral 21 is grounded with an electrode having a mesh shape or having multiple holes according to the present invention.

Note that it is connected to the sample holder 18 and the electrode 21 via a DC power source 22.

In the apparatus shown in FIG. 3, the electrode 21ia is grounded and the substrate holder is positively biased by direct current *a, unlike in the first embodiment. However, in this example, by biasing the sample holder side positively, the sputtering effect caused by accelerated positive ions was reduced. It is intended to further reduce the

When an experiment was conducted using the apparatus shown in FIG. 5 at a film formation rate of ~13 μm/H, a photoreceptor with a small temperature rise and good external bond was obtained. Regarding the photosensitive characteristics, the film formation time was 2 hours,
Shigenobu charged with film thickness ~26μm~700VX EV2~
A good result of 0.17 era/erR was obtained.

As described above, according to the present invention, film sputtering and severe problems during film formation, which were noticeable when forming a film at high speed by increasing the discharge power or using a low frequency (multiple MHz) power source, can be seen. It is possible to reduce the rise in substrate temperature and produce a photoreceptor having good photosensitive properties.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of a conventional electrophotographic body manufacturing apparatus. 1. Vacuum chamber, 2. Electrode, 3. Main board Holter"-14, high frequency power supply, 5. Gas cylinder, 6. Mass flow controller, 7. Main pulp, 8. High vacuum evacuation system, 9. Roughing valve, IQ, low vacuum evacuation system. 2nd The figure is a schematic diagram of an embodiment based on the present invention, (8) is a plan view, and (b) is a front view. 11. Vacuum chamber, 12
, substrate holder, 13. High frequency power supply, 14° electrode, 15
1. Electrode having a net shape or multiple holes according to the present invention,
16. Exhaust port, 17. Gas inlet. FIG. 3 is a schematic diagram of an electrode structure of an embodiment based on the present invention. 1B, base plate holder, 19. High frequency power supply, 20
．． Electrode, 211 Electrode based on the present invention, 22. DC power supply. Above 1. Suwa Joko Co., Ltd. Agent Mogami Patent Attorney Figure 1 Figure 2

Claims (1)

[Claims] In an apparatus for growing an amorphous semiconductor on a conductive substrate by introducing a predetermined gas into a vacuum chamber and keeping the pressure at a constant J9r level, and applying high frequency waves to the electrodes, a network or a large number of layers are formed around the conductive substrate. An electrophotographic photoreceptor manufacturing device characterized by having an electrode with holes arranged therein.