JPS607686A - Magnetic bubble memory device - Google Patents
Magnetic bubble memory deviceInfo
- Publication number
- JPS607686A JPS607686A JP58114176A JP11417683A JPS607686A JP S607686 A JPS607686 A JP S607686A JP 58114176 A JP58114176 A JP 58114176A JP 11417683 A JP11417683 A JP 11417683A JP S607686 A JPS607686 A JP S607686A
- Authority
- JP
- Japan
- Prior art keywords
- memory
- magnetic
- bubble memory
- main body
- bubble
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
発明の技術分野
本発明は磁気バブルメモリ装置(以下単に「)々プルメ
モリjとも略記)に関し、特にそれの2臂ツケージ構造
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a magnetic bubble memory device (hereinafter simply referred to as "pull memory"), and particularly to a two-arm cage structure thereof.
技術の背景
バブルメモリは現在既にメジャ/マイナループ構成を用
いた記憶容量が1Mbitのものが開発されているが、
更に4Mbit以上の高記憶容量のバブルメモリの開発
が要求されている。このような高記憶容量を達成する方
法として、既存の1Mbitバブルメモリと同じ回路構
成でもってバブル径に’Aにし、情報格納用ループ(マ
イナループ)1個あたシの記憶容量を2倍(ビットピッ
チV2)にして月一つ情報格納用ループの数ケ2倍にす
る方法が考えられる。しかしこの方法は、バブル転送路
の形成に高精度の微細リソグラフィ技術が要求でれ、ま
たアクセス時間が2倍になるという問題がある。Technical background A bubble memory with a storage capacity of 1Mbit using a major/minor loop configuration has already been developed.
Furthermore, there is a demand for the development of a bubble memory with a high storage capacity of 4 Mbit or more. As a method to achieve such a high storage capacity, we use the same circuit configuration as the existing 1Mbit bubble memory, but set the bubble diameter to 'A', and double the storage capacity (bits) per information storage loop (minor loop). A possible method is to double the pitch V2) and double the number of information storage loops once a month. However, this method requires a highly accurate fine lithography technique to form the bubble transfer path, and has the problem of doubling the access time.
一方、システムの点からは既存のIMbitバブルメモ
リとの互換性も要求される。On the other hand, from a system perspective, compatibility with the existing IMbit bubble memory is also required.
以上の点から、現在、4Mbitバブルメモリとしては
既存のIMbttバブルメモリチップを4個並設したも
のを晃サイズに縮小した構成が最適と考えられている。From the above points, it is currently considered that the most suitable 4 Mbit bubble memory is a configuration in which four existing IMbtt bubble memory chips are arranged in parallel and reduced to a smaller size.
しかしながらこの構成では外部接続用端子の数がIMb
itバブルメモリに比べて単純には4倍、端子の一部ケ
共通にしても2倍以上に増加するという問題が生じる。However, in this configuration, the number of external connection terminals is IMb.
A problem arises in that the number of terminals increases by four times compared to the IT bubble memory, and even if some of the terminals are made common, the number increases by more than two times.
しかるに従来のバブルメモリの・クツケージ構造では後
述する如くかかる多数の端子を処理することができず、
その対策が要望されている。However, the conventional bubble memory cage structure cannot handle such a large number of terminals, as will be described later.
Countermeasures are required.
従来技術と問題点
従来のパズルメモリのパッケージ構造につき図面を参照
して説明する。第1図及び第2図は従来のI Mbit
バブルメモリの一例の斜視外観図及び分解図である。図
中、符号1はメモリ本体を示し、符号2はメモリ本体の
磁気シールド用のケースを示す。第2図を参照するに、
バブルメモリチップ3はセラミック基板4に搭載され、
更に面内回転駆界発生用の互に直焚する2つのコイル5
,6が基板4に組み付けられてチップ/コイル組立体7
が作られる。この組立体7が外部接続用端子8を設けた
樹脂モールドラ1/−ム9に実装され、東に上下からキ
ーノ′1′−10,11及びノ々イアス磁界発生用の永
久磁石12.13が組み付けられてメモリ本体1が組み
立てられる。一方、磁気シールドケース2は磁性材料(
例えばパーマロイ)から成る両端が開放した筒形の形状
であシ、メモリ本体1に矢印A方向から嵌着される。Prior Art and Problems The package structure of a conventional puzzle memory will be explained with reference to the drawings. Figures 1 and 2 show the conventional I Mbit
FIG. 2 is a perspective external view and an exploded view of an example of a bubble memory. In the figure, reference numeral 1 indicates a memory main body, and reference numeral 2 indicates a case for magnetic shielding of the memory main body. Referring to Figure 2,
Bubble memory chip 3 is mounted on ceramic substrate 4,
Furthermore, two coils 5 that are directly fired with each other for generating an in-plane rotational driving field.
, 6 are assembled on the substrate 4 to form a chip/coil assembly 7.
is made. This assembly 7 is mounted on a resin molded rack 1/-m 9 provided with external connection terminals 8, and from above and below on the east are keyo'1'-10, 11 and permanent magnets 12 and 13 for generating a magnetic field. Then, the memory main body 1 is assembled. On the other hand, the magnetic shield case 2 is made of magnetic material (
It has a cylindrical shape with both ends open and is made of, for example, permalloy, and is fitted into the memory main body 1 from the direction of arrow A.
しかるに、このような従来の磁気シールドケース構造で
は端子8をフレーム9の相対する2辺側にしか設けるこ
とができないため、前述のように多数の端子を必要とす
る4 Mbitパズルメモリには適用できない。However, with such a conventional magnetic shield case structure, the terminals 8 can only be provided on two opposing sides of the frame 9, so it cannot be applied to a 4 Mbit puzzle memory that requires a large number of terminals as described above. .
発明の目的
本発明は、上記実情に鑑み、従来に比べ1かなシ多数の
端子を設けることのできるような磁気バブルメモリ装置
のパッケージ構造を提供することを目的とするものであ
る。OBJECTS OF THE INVENTION In view of the above-mentioned circumstances, an object of the present invention is to provide a package structure for a magnetic bubble memory device in which one or more terminals can be provided than in the past.
発明の構成
本発明による磁気バブルメモリ装置は、パズルメモリチ
ップを磁界発生用のコイル及び永久礎石ならびに外部接
続用端子と共に組み立てて成るメモリ本体にそれの上下
面にてそれぞれ磁力シールド板を被せ、両シールド板を
メモリ本体の隅角部のみにて接続固定して、メモリ本体
の3つ以上の側辺から外部接続用端子を引き出し可能に
構成したものである。Structure of the Invention The magnetic bubble memory device according to the present invention has a memory main body made up of a puzzle memory chip assembled with a coil for generating a magnetic field, a permanent cornerstone, and an external connection terminal, and a magnetic shield plate is placed on the top and bottom surfaces of the memory main body, respectively. The shield plate is connected and fixed only at the corner portion of the memory main body, and the external connection terminals can be drawn out from three or more sides of the memory main body.
発明の実施例
以下、本発明の実施例につき図面を参照して詳細に説明
する。Embodiments of the Invention Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第3図及び第4図は本発明による4Mbitバブルメモ
リの一実施例の斜視外観図及び一部分解図でおる。図中
、符号21はメモリ本体全示し、符号22は磁気シール
ドケースを示す。メモリ本体21は基本的には第2図に
示す従来の1Mbitパズルメモリのメモリ本体lと同
様にバブルメモリチップ及び駆動磁界発生用コイルをセ
ラミック基tleに組み付けたチップ/コイル組立体を
樹脂モールドフレームに組み付ケ、これに更にキーパ−
及びバイアス磁界発生用永久砒石葡組み付けて構成され
たものであるが、後述するようにチップ/コイル組立体
の構造及び外+419嬬子の配置構成が相違している。3 and 4 are a perspective external view and a partially exploded view of an embodiment of a 4 Mbit bubble memory according to the present invention. In the figure, numeral 21 indicates the entire memory main body, and numeral 22 indicates a magnetic shielding case. The memory main body 21 is basically a chip/coil assembly in which a bubble memory chip and a driving magnetic field generating coil are assembled on a ceramic base plate in a resin mold frame, similar to the memory main body 1 of the conventional 1 Mbit puzzle memory shown in FIG. Assemble it, and add the keeper to it.
and a permanent arsenite for generating a bias magnetic field, but as will be described later, the structure of the chip/coil assembly and the arrangement of the outside +419 pins are different.
磁気シールドケース22は特に第4図に明示するように
上下1対の磁気シールド板22A及び22Bから成って
いる。各シールド板22A、22Bは基本的にはメモリ
本体21とほぼ同じサイズのものであるが、それぞれ4
隅に突片22 a、 22 bを有する。シールド板2
2A、2213Uそれぞれメモリ本V+21の上面及び
下面に被せられ、そして4隅の突片22a 、22b全
折シ重ねて1剰することによυ互いに磁気的C゛ヒ俵続
芒れ且つ構造的にも固定保持され、磁気シールドケース
22が構成される。尚、4隅のシールド仮突片22a、
22bの接合だけでシールドケース22の良好な耐外部
磁界特性が得られることにり、験的に災証された。The magnetic shield case 22 consists of a pair of upper and lower magnetic shield plates 22A and 22B, particularly as shown in FIG. Each shield plate 22A, 22B is basically the same size as the memory main body 21, but each
It has projecting pieces 22a and 22b at the corners. Shield plate 2
2A and 2213U are respectively placed on the upper and lower surfaces of the memory book V+21, and the protrusions 22a and 22b at the four corners are completely folded and overlapped to form a single remainder, so that they are magnetically connected to each other and are structurally connected. The magnetic shield case 22 is also fixedly held. In addition, the shield temporary projecting pieces 22a at the four corners,
It has been experimentally proven that good external magnetic field resistance characteristics of the shield case 22 can be obtained only by joining 22b.
但し、7一ルド板突片22A 、22bの曲げ加工に伴
う特性劣化を防止するため、曲げJ成形後に200℃程
度で熱処理するのが有効である。However, in order to prevent characteristic deterioration due to bending of the 7-shaped plate protrusions 22A and 22b, it is effective to heat-treat them at about 200° C. after bending J-forming.
かかる磁気/−ルドケース構成によrl−に、1′−!
、(示の如くメモリ本体の4方の側辺が開hVされ、こ
)1゜ら開側辺部から外部接にノし相端子28ケ引き出
すことが可能となり、第1図及び第2図に示ター従米の
ノ々ツケージ構造に比べて約2倍の本数の端子忙殺は得
る。With such a magnetic field case configuration, 1'-!
(As shown, the four sides of the memory main body are opened, and it becomes possible to pull out 28 phase terminals from the open side sides to the external connection by 1 degree, as shown in Figs. 1 and 2. Compared to the conventional non-cage structure shown in Figure 1, approximately twice the number of terminals can be used.
尚、上記のようにメモリ本体21の4万の側辺から端子
28を引き出すためには、コイル/チ。In addition, in order to pull out the terminal 28 from the 40,000 side of the memory body 21 as described above, the coil/chi.
ノ組立体を第5図に示す如き構造とすれば良い。The assembly may have a structure as shown in FIG.
即ち、セラミック基板24に図示の如く4つの突片24
a 、24b 、24c 、24dを有する形状とし、
これにバブルメモリチッf23及び駆動磁界発生用コイ
ル25.26を実装し、基板突片24a、24b、24
c 、24dにおいて節子28との電気的接続をとるよ
うにする。That is, four protrusions 24 are provided on the ceramic substrate 24 as shown in the figure.
a, 24b, 24c, 24d,
A bubble memory chip f23 and drive magnetic field generation coils 25 and 26 are mounted on this, and the board protrusions 24a, 24b, 24
An electrical connection is made with the node 28 at c and 24d.
発明の効果
以上のように本発明のパッケージ構造によれば、磁気シ
ールドケースの簡単な構造改良によりメモリ本体から多
数の外部接続端子を引き出すことが可能であシ、従って
冒頭に記述したような構成の4Mbitバブルメモリの
実現に寄与し得る。Effects of the Invention As described above, according to the package structure of the present invention, it is possible to draw out a large number of external connection terminals from the memory main body by simply improving the structure of the magnetic shielding case. This can contribute to the realization of a 4Mbit bubble memory.
第1図及び第2図は従来のI Mbitバブルメモリの
一例の斜視外観図及び分解図、第3図、第4図及び第5
図は本発明による4 Mbitバブルメモリの一笑施例
の斜視外観図、一部分解図、及びチップ/コイル組立体
の分解図である。
21・・・メモリ本体、22・・・磁気シールドケース
、22A、22B・、磁気シールド板、22a、22b
・・・シールド也突片、23・・・磁気パズルメモリチ
ッグ、24・・・セラミック基板、25.26・・・1
n1内回転駆動磁界発生用コイル、28・・・外部接ト
ノ°シ用端子。
特許出願人
富士通株式会社
特許出願代理人
弁理士 青 木 朗
弁理士 西 舘 和 之
弁理士 内 1)幸 男
弁理士 山 口 昭 之
第1図
第4図
第5図1 and 2 are a perspective external view and an exploded view of an example of a conventional I Mbit bubble memory, and FIGS. 3, 4, and 5.
The figures are a perspective external view, a partially exploded view, and an exploded view of a chip/coil assembly of an embodiment of a 4 Mbit bubble memory according to the present invention. 21...Memory body, 22...Magnetic shield case, 22A, 22B...Magnetic shield plate, 22a, 22b
...Shield and projecting piece, 23...Magnetic puzzle memory chip, 24...Ceramic substrate, 25.26...1
n1 Internal rotation drive magnetic field generation coil, 28...Terminal for external contact. Patent applicant Fujitsu Limited Patent agent Akira Aoki Patent attorney Kazuyuki Nishidate Patent attorney 1) Yukio Patent attorney Akira Yamaguchi Figure 1 Figure 4 Figure 5
Claims (1)
磁石ならびに外部接続用端子と共に組み立てて成るメモ
リ本体にそれの上下面にてそれぞれ磁気シールド板を被
せ、両シールノ々板をメモリ本体の隅角部のみにて接続
固定して、メモリ本体の3つ以上の側辺から外部接続用
端子を引き出し可能に構成したことを特徴とする磁気ノ
々グルメモリ装置。1. The memory body, which is made up of a puzzle memory chip assembled with a coil for generating a magnetic field, a permanent magnet, and a terminal for external connection, is covered with magnetic shield plates on the top and bottom surfaces respectively, and both seal plates are attached to the corners of the memory body. 1. A magnetic noggle memory device, characterized in that the connection is fixed with a chisel, and the external connection terminals can be pulled out from three or more sides of the memory main body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58114176A JPS607686A (en) | 1983-06-27 | 1983-06-27 | Magnetic bubble memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58114176A JPS607686A (en) | 1983-06-27 | 1983-06-27 | Magnetic bubble memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS607686A true JPS607686A (en) | 1985-01-16 |
Family
ID=14631077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58114176A Pending JPS607686A (en) | 1983-06-27 | 1983-06-27 | Magnetic bubble memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS607686A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6045995A (en) * | 1983-08-22 | 1985-03-12 | Hitachi Ltd | Magnetic bubble memory module and its device |
-
1983
- 1983-06-27 JP JP58114176A patent/JPS607686A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6045995A (en) * | 1983-08-22 | 1985-03-12 | Hitachi Ltd | Magnetic bubble memory module and its device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5947386B2 (en) | magnetic bubble device | |
| JPS58178293U (en) | connector | |
| JPS6344398A (en) | Magnetic bubble memory device | |
| JPS6025114U (en) | inductance element | |
| JPH054302U (en) | Magnetic head device | |
| JPS6120290A (en) | Magnetic bubble element | |
| JPS6029115Y2 (en) | magnetic bubble memory package | |
| JPH0544756B2 (en) | ||
| JPS58177588A (en) | Cassette type magnetic bubble memory | |
| JPS61151819A (en) | Thin film magnetic head | |
| JPS60145512A (en) | Magnetic head | |
| JPH0110737Y2 (en) | ||
| JPS6125116Y2 (en) | ||
| JPS5947286U (en) | DC/DC converter | |
| JPS58171785A (en) | Cassette type magnetic bubble memory | |
| JPS59136916A (en) | Permanent magnet manufacturing method | |
| Bonyhard | Novel memory based on use of magnetic wires with re-entrant hysteresis loops | |
| JPS6048835B2 (en) | Manufacturing method of bubble memory module | |
| JPS60111405A (en) | Structure of spool for transformer | |
| JPS60140588A (en) | Magnetic bubble device | |
| JPS6098595A (en) | magnetic bubble memory device | |
| JPS5971189A (en) | Magnetic bubble memory device | |
| JPS6099507U (en) | Inductance element for electric circuits | |
| JPS5948122U (en) | noise filter | |
| JPH02105313A (en) | Magnetic head |