JPS6077461A - High frequency semiconductor element - Google Patents

Abstract

PURPOSE:To increase power of a high frequency semiconductor element without increasing a chip size by forming an active region, a base connecting electrode and an emitter connecting electrode at the absolute line at both sides of the diagonal line of a substrate when forming the first and second transistors on a rectangular or square semiconductor substrate, and connecting the electrodes to the bonding regions of the base and the emitter disposed on the diagonal line. CONSTITUTION:When the first and second transistor active regions 121, 122 are formed on a semiconductor substrate 11, the regions are formed linearly symmetrically at both sides of the diagonal line AA' of the substrate 11. Similarly, the base connecting electrodes 151, 152 and emitter connecting electrodes 161, 162 are formed linearly symmetrically. A base bonding region 13 and an emitter bonding region 14 are disposed on the diagonal line AA', and the electrodes 151, 152 and 161, 162 are connected. Thus, the power can be increased without increasing the chip size, thermal runaway decreases, and high frequency characteristic is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a high-frequency semiconductor device, and in particular, a first . The second pump 7' is used for those having a fourth pumping area.

[Technical view of invention]

Conventionally, this type of high-frequency semiconductor element (high-frequency transistor) has been configured as shown in FIG. 1, for example. In the figure, reference numeral 1 indicates a semi-quaternary element 11, in which a transistor active region 12 is disposed, and on a diagonal line A-A' of the semiconductor element 11 is a base bonding region 13. And emitter pumping regions 14 (first and second ribbon pumping regions) are formed. The transistor active region 120, the paste connection electrode 15, and the emitter connection electrode 16 are connected to the paste bonding region 13 and the emitter bonding region 14, respectively. A collector connection electrode area is formed,
The cross-sectional structure of the semiconductor element 11 has a normal vertical bipolar transistor configuration.

FIG. 2 shows the transistor active region 1 in FIG. 1 above.
2, a pace electrode 17 and an emitter electrode 18 shown in (2) are fitted with each other with a predetermined distance between them.

[Problems with background technology]

By the way, in order to increase the power of the high-frequency semiconductor device having the above-mentioned configuration, conventionally the area of the transistor active region 12 is increased as shown in FIG. 3. At this time, the fourth
As shown in the figure, the comb-shaped electrode 1 of the transistor active region 12
7. Increase the number of 18. As the pattern area of the transistor active region 12 increases and the number of emitters and space electrodes increases in this way, heat dissipation in the central part of the active region 12 becomes worse than in the peripheral part. This has the drawback of causing non-uniform operation within the element, making it susceptible to thermal runaway. Furthermore, regardless of the size of the element 11, the transistor active region 12 must be formed at a distance of at least a predetermined distance from the periphery of the element 11. It becomes larger as shown in . Therefore, the number of elements obtained from one wafer decreases,
It has the disadvantage of high cost. Furthermore, as the power increases, the connection electrode becomes longer and the grounding inductance increases.
High frequency characteristics also deteriorate.

[Purpose of the invention]

This invention was made in view of the above circumstances,
The purpose is to provide an excellent high-frequency semiconductor device that can increase the thickness of the chip without increasing the chip size, reduce thermal runaway, and improve high-frequency characteristics.

[Summary of the invention]

That is, in the present invention, the first and second bonding regions are formed diagonally on one surface on which the element is formed, and the third bonding region is formed on the other surface on which the element is formed. In the high frequency semiconductor device having the above first. The first bonding area 7' is located at a position symmetrical to the diagonal line where the second bonding area 7' is formed. A second transistor active region is provided, and the first . Each of the second transistor active regions is connected to the first transistor active region. It is connected to the second bonding region.

[Embodiments of the invention]

An embodiment of the present invention will be described below with reference to the drawings. In FIG. 5, the same components as those in FIG. 1 or FIG. 3 are given the same reference numerals, and their explanations will be omitted. That is, the first . Second transistor active region 12, . 122, and these transistor active regions 121 are connected to the pace bonding region 13 via the pace connection electrodes 15..15□, respectively, and to the emitter connection electrode 16X.
, 16□ to the emitter gating region 14. In addition, the pace connection electrode 15□, 15
□ and emitter connection electrodes 16□, 16□ are each formed symmetrically with respect to the diagonal line A-A'.

According to such a configuration, the area of the transistor active region can be increased without increasing the pattern area. Therefore, the number of elements per wafer does not decrease. 1. Here, since the transistor active region is set to be divided into two, non-uniform operation within the transistor active region can be improved and the level of occurrence of thermal runaway can be reduced.

Furthermore, since the transistor active area is divided into 21iQi, the ground inductance can be reduced to 1/2, and high frequency performance can be improved.

In addition, with such a configuration, it is possible to manufacture semiconductor elements with different output levels simply by changing the mask of the transistor active region, and the manufacturing process can be unified.

〔Effect of the invention〕

As explained above, according to the present invention, it is possible to obtain an excellent high-frequency semiconductor device that can increase power without increasing the chip size, reduce thermal runaway, and improve high frequency and performance.

[Brief explanation of the drawing]

Fig. 1 is a diagram for explaining the i9 turn configuration of a conventional high frequency semiconductor device, Fig. 2 is a pattern diagram showing in detail the transistor active region shown in Fig. 1 above,
The figure is a diagram for explaining the pattern configuration when increasing the power of the high-frequency semiconductor element shown in Figure 1 above, and Figure 4 is a diagram for explaining the pattern configuration when increasing the power of the high-frequency semiconductor element shown in Figure 1 above.
FIG. 5 is a pattern plan view showing details of the transistor active region in the figure, and FIG. 5 is a diagram for explaining the pattern configuration of a high frequency semiconductor device according to an embodiment of the present invention. 1. Semiconductor element, J 2. , J2. ...
1゜Second transistor active region, 13...Base binding region tJ:L, (first bonding region)
, 14... Emitter bonding region (second bonding region), 151 +15x... Base connection 5 (
Pole, 16□, 16□...Emitter connection electrode. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 4, Figure 2 Figure 3 Figure 4

Claims (1)

[Claims] The first . A high frequency semiconductor device having a second bonding region and another connection electrode region formed on the other surface on which the device is formed. Transistor active regions of f, 1, g% 2 of the same pattern are provided at positions symmetrical to the diagonal line where the second bonding regions are formed, and these first. The second transistor active regions are respectively connected to the first transistor. A high frequency semiconductor device, characterized in that it is connected to a second bonding region.