JPS6079759A - Insulating type semiconductor device - Google Patents
Insulating type semiconductor deviceInfo
- Publication number
- JPS6079759A JPS6079759A JP58187645A JP18764583A JPS6079759A JP S6079759 A JPS6079759 A JP S6079759A JP 58187645 A JP58187645 A JP 58187645A JP 18764583 A JP18764583 A JP 18764583A JP S6079759 A JPS6079759 A JP S6079759A
- Authority
- JP
- Japan
- Prior art keywords
- support plate
- vessel
- insulating
- resin
- resin body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
- H10W40/611—Bolts or screws
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/10—Containers or parts thereof
- H10W76/12—Containers or parts thereof characterised by their shape
- H10W76/13—Containers comprising a conductive base serving as an interconnection
- H10W76/136—Containers comprising a conductive base serving as an interconnection having other interconnections perpendicular to the conductive base
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は例えばトランジスタのコレクタ面が固着される
ような半導体チップ支持板の表面が絶縁層で覆われた絶
縁形半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] The present invention relates to an insulated semiconductor device in which the surface of a semiconductor chip support plate, to which a collector surface of a transistor is fixed, for example, is covered with an insulating layer.
金属からなる半導体チップ支持板が表面に露出した半導
体装置を同様に金属からなる冷却体上に絶縁して固定す
る場合には、例えばマイカ板のような絶縁板を介在させ
なければならない。そのような手数を省しために、例え
ばJEDBCTO220形の半導体チップ支持板の冷却
体取付は部も封止用樹脂のトランスファ成形により薄く
被覆した、いわゆるフルパック形半導体装置が知られて
いるが、冷却体との全面にわたる熱伝達性の良好な接触
を得ることが難しい。接触面の空隙を充てん材で滴たし
た場合も長期間の使用中に流出して半導体装置と冷却体
間の熱抵抗上昇が生ずる。また大形のフルパック形半導
体装置の製作が困難である。When a semiconductor device with a semiconductor chip support plate made of metal exposed on the surface is insulated and fixed onto a cooling body also made of metal, an insulating plate such as a mica plate must be interposed. In order to save such trouble, for example, a so-called full-pack type semiconductor device is known in which the cooling body mounting portion of the semiconductor chip support plate of the JEDBCTO220 type is thinly coated with a sealing resin by transfer molding. It is difficult to obtain good heat transferable contact over the entire surface with the cooling body. Even if filler is dripped into the gap between the contact surfaces, it will flow out during long-term use, causing an increase in the thermal resistance between the semiconductor device and the cooling body. Furthermore, it is difficult to manufacture a large full-pack type semiconductor device.
本発明はこの欠点を除き、大きな面積で冷却体に接触し
て良好な熱伝達が得られるように冷却体に取り付けるこ
とができる絶縁形半導体装置を提供することを目的とす
る。It is an object of the present invention to overcome this drawback and to provide an insulated semiconductor device that can be attached to a heat sink so as to contact the heat sink over a large area and to obtain good heat transfer.
本発明による半導体装置は金属からなる半導体チップ支
持板の底面とその支持板および半導体チップを包囲する
樹脂体の底面とを同一平面を形成し、その底面の上を全
面にわたるエラストマーからなる層を含む絶縁層で被覆
し、樹脂体および絶縁層に底面に垂直な貫通孔を設ける
ことによって上記の目的を達成する。エラスマーが接着
材であり、絶縁箔と半導体チップ支持板および樹脂体の
底面きの間の接着層として介在するか、あるいは底面全
面に接着されてそれのみで絶縁層を形成することが望ま
しい。A semiconductor device according to the present invention includes a layer made of an elastomer that forms the same plane as the bottom surface of a semiconductor chip support plate made of metal and a bottom surface of a resin body surrounding the support plate and the semiconductor chip, and covers the entire surface of the bottom surface. The above object is achieved by coating with an insulating layer and providing through holes perpendicular to the bottom surface of the resin body and the insulating layer. The elastomer is an adhesive and is preferably interposed as an adhesive layer between the insulating foil, the semiconductor chip support plate, and the bottom surface of the resin body, or is preferably bonded to the entire bottom surface to form an insulating layer by itself.
第1図は本発明の一実施例を示し、半導体チップ、例え
ばトランジスタチップ1はそのコレクタ面により金属支
持板2の上に固定されている。チップ1の上面のベース
電極あるいはエミッタ電極はリード線3により支持板2
に絶縁片4を介して固定された端子5にそれぞれ接続さ
れている。支持板2の周縁部は樹脂容器6の下部に埋め
込まれ、容器6の底面き支持板2の底面は同一平面をな
している。容器6の内部にはチップ1を封止する注形樹
脂7により満たされている。容器6および支持板2の底
面には、例えばポリエステルフィルムのような絶縁箔8
がゴム接着材層9により接着されている。さらに容器6
と絶縁箔8、接着材層9を貫通する取付は孔10が設け
られている。この半導体装置を取付は孔10に挿入され
たねじにより金属からなる冷却体に簡単に取り付けるこ
とができる。その場合装置の下面に弾性のある接着材R
9が存在するので、冷却体に密着し良好な熱伝達性が得
られる。また半導体装置使用中の温度変動による膨張、
収縮に対し弾性のある接着材層、絶縁箔が追従するので
装#(!:冷却体の間の熱抵抗が上昇することが少ない
。なお絶縁箔8を用いないで接着材層9が露出したまま
の状態で構成することもできる。FIG. 1 shows an embodiment of the invention, in which a semiconductor chip, for example a transistor chip 1, is fixed on a metal support plate 2 by its collector surface. The base electrode or emitter electrode on the top surface of the chip 1 is connected to the support plate 2 by a lead wire 3.
are respectively connected to terminals 5 fixed via insulating pieces 4. The peripheral edge of the support plate 2 is embedded in the lower part of the resin container 6, and the bottom surface of the support plate 2 with the bottom of the container 6 is on the same plane. The inside of the container 6 is filled with a molding resin 7 for sealing the chip 1. An insulating foil 8 such as a polyester film is placed on the bottom of the container 6 and the support plate 2.
are adhered by a rubber adhesive layer 9. Furthermore, container 6
A mounting hole 10 is provided which penetrates the insulation foil 8 and the adhesive layer 9. This semiconductor device can be easily attached to a cooling body made of metal using screws inserted into the holes 10. In that case, an elastic adhesive R is attached to the bottom surface of the device.
9 exists, so that it comes into close contact with the cooling body and good heat transfer properties can be obtained. In addition, expansion due to temperature fluctuations during use of semiconductor devices,
Since the elastic adhesive layer and insulating foil follow the shrinkage, the thermal resistance between the cooling body is less likely to increase. It can also be configured as is.
上の実施例では樹脂体は樹脂容器6と注型樹脂7とから
なるが、トランスファ成形により一体に形成してもよい
。また半導体チップは1個をこ限定されず、複数のチッ
プを共通の支持板上に導電的あるいは絶縁して固定して
もよい。In the above embodiment, the resin body consists of the resin container 6 and the casting resin 7, but they may be integrally formed by transfer molding. Further, the number of semiconductor chips is not limited to one, and a plurality of chips may be fixed on a common support plate in a conductive or insulated manner.
本発明は、半導体装置の金属からなる半導体チップ支持
板を底面のみを露出させて樹脂体で包囲し、支持板およ
び樹脂体の底面をエラスマーからなる層を含む絶縁層で
後い、かつ樹脂体および絶縁層を貫通する取付は孔を設
けたもので、取付は孔に挿入した取付けねじで冷却体上
に簡単に固定でき、その際エラストマーからなる層の弾
性により絶縁形半導体装置と冷却体の間が密着して半導
体装置の良好な放熱が行われ、さらに使用中の温度変動
に際しても熱抵抗の増大がないので半導体装−の信頼性
の高い運転が可能になるなどその効果は極めて大きい。The present invention includes a semiconductor chip support plate made of metal of a semiconductor device, which is surrounded by a resin body with only the bottom surface exposed, and the bottom surfaces of the support plate and the resin body are covered with an insulating layer including a layer made of elastomer, and the resin body For mounting through the insulation layer, a hole is provided, and the mounting can be easily fixed on the heat sink using a mounting screw inserted into the hole, and the elasticity of the layer made of elastomer allows the insulated semiconductor device and the heat sink to be connected easily. The close contact between the semiconductor devices allows for good heat dissipation of the semiconductor device, and furthermore, even when the temperature fluctuates during use, there is no increase in thermal resistance, making it possible to operate the semiconductor device with high reliability, which is extremely effective.
第1図は本発明の一実施例を切断して示した斜視図であ
る。
111.半導体チップ、2・・・支持板、6・・・樹脂
容器、7・・・注型樹脂、8・・・絶縁箔、9・・・接
着材層。FIG. 1 is a cutaway perspective view of one embodiment of the present invention. 111. Semiconductor chip, 2... Support plate, 6... Resin container, 7... Casting resin, 8... Insulating foil, 9... Adhesive layer.
Claims (1)
および半導体チップを包囲する樹脂体の底面とが同一平
面に形成され、該底面が全面にわたるエラストマーから
なる層を含む絶縁層によって被覆され、前記樹脂体およ
び絶縁層に底面に垂直な貫通孔が設けられたことを特徴
きする絶縁形半導体装置。 2)/l?許請求の範囲第1項記載の装置において、エ
ラストマーが絶縁箔と半導体チップ支持板および樹脂体
の底面の間を接着する接着材であることを特徴きする絶
縁形半導体装置。 3)特許請求の範囲第1項記載に装置において、絶縁層
がエラストマー接着材のみからなることを特徴とする絶
縁形半導体装置。[Claims] 1) The bottom surface of a semiconductor chip support plate made of metal and the bottom surface of a resin body surrounding the support plate and the semiconductor chip are formed on the same plane, and the bottom surface includes a layer made of an elastomer covering the entire surface. 1. An insulated semiconductor device covered with an insulating layer, the resin body and the insulating layer having a through hole perpendicular to the bottom surface thereof. 2)/l? 2. The insulated semiconductor device according to claim 1, wherein the elastomer is an adhesive for bonding between the insulating foil, the semiconductor chip support plate, and the bottom surface of the resin body. 3) An insulated semiconductor device according to claim 1, wherein the insulating layer is made of only an elastomer adhesive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58187645A JPS6079759A (en) | 1983-10-06 | 1983-10-06 | Insulating type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58187645A JPS6079759A (en) | 1983-10-06 | 1983-10-06 | Insulating type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6079759A true JPS6079759A (en) | 1985-05-07 |
Family
ID=16209735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58187645A Pending JPS6079759A (en) | 1983-10-06 | 1983-10-06 | Insulating type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6079759A (en) |
-
1983
- 1983-10-06 JP JP58187645A patent/JPS6079759A/en active Pending
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