JPS6080263A - Bonding wire for semiconductor element - Google Patents

Abstract

PURPOSE:To eliminate the loosening of a wound wire and its excess amount of bite by a method wherein, in winding the title wire used to connect the chip electrode of a semiconductor element to an external lead around a spool, the multilayer wind part continuous to the monolayer wind part is superposed thereon, and the multilayer wind part is put in the multilayer structure that arrangement wind layers and cross wind layers of 1-20 turns are alternately laminated. CONSTITUTION:The wind part (a) of the first layer is formed by arrangement wind around the barrel 2a of the spool, and the wire 1y continuous to its terminal wire 1x is superposed on the first layer and cross-wound in the return direction, resulting in the construction of the second layer. Next, the wire 1z continuous to the terminal wire 1y of the second layer is turned into the third layer of arrangement wind by turning on the second layer, and further cross-wound while the forth layer is turned thereon. At this time, the cross wind is made by 1-20 turns, and the interposed cross wind is not made by so many turns. Such a manner eliminates the loosening of the wire and the generation of disconnection and the like.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bonding wire for a semiconductor device used to connect a chip electrode of a semiconductor device to an external lead.

This type of bonding wire is wound around a spool as shown in FIG.

In the figure, A is a bonding wire 1' of a semiconductor element.
(The wire 1 is wound on the body 2a of the spool 2 so that a -Lj winding part a and a multi-layer winding part continuous with the single-layer winding part aK are formed. The winding part a fixes the starting end 1a of 10 wires to the spool 2,
It has a one-layer structure in which the body 2aK of the spool 2 is wound in line over the length required for connection from the winding start end 1a to the disconnection detection device.

The multi-layer winding section has a multi-layer structure by winding the continuous wire 1 from the single-layer winding section a back and forth in the multi-layer winding section.

The multilayer structure described above is a multilayer structure in which both the forward and backward sides are line-wound or thread-wound or loss-wound.

Recently, with the development of high-speed automobile bonders, the bonding speed is fast and the use of wire has increased, so the conventional 50~
Instead of the 200frL winding, long windings such as 500 to 5,000 m windings are desired.

However, when the multilayer winding part is wound in a long length without changing the conventional multilayer structure, the following problems occur.

That is, the multilayer structure of the multilayer winding part b'6 aligned winding is as follows.
This may cause the wire 1 to unravel or fall off during bonding work, and if the multilayer winding part has a cross-wound multilayer structure, the wire 1 may be bitten too tightly and may fall off.
〈\There were problems such as wire breakage and reduced work efficiency.

The present invention has been made in view of the above circumstances, and
By achieving an appropriate retention state of the wound wire in the multi-layer winding section, it is possible to prevent the wound wire from unraveling and excessive biting, which in turn completely prevents wire breakage during bonding, improving work efficiency. The present invention aims to provide bonding wires for semiconductor devices.

Hereinafter, the present invention will be specifically described based on illustrated embodiments.

The bonding wire for a semiconductor device of the present invention is similar to the conventional bonding wire winding group A shown in FIG. It is characterized in that the multilayer winding part has a multilayer structure in which aligned winding layers and 1 to 20 cross winding layers are alternately laminated.

The multilayer structure of this multilayer winding part will be explained as follows.

First, as shown in FIG. 2, the first layer is formed by winding the bonding wire directly from the first layer winding portion a onto the lxi spool body 2a in an aligned manner in the direction of the arrow (forward direction).

Next, the wire 1y, which is continuous to the terminal wire 1x of the first layer shown in Fig. 1, is wound cross-wound in the direction of the arrow (backward direction) so as to overlap with the first layer to form the second layer (Fig. 3). .

Furthermore, a third layer is constructed in the same manner as the first layer so as to overlap the wire lz'jz continuous to the second layer terminal wire 1y shown in FIG. 3 (FIG. 4).

Furthermore, in order to make the fourth layer groove bottom, the second layer is cross-wound so as to overlap the third layer.

In this way, the multilayer winding part of the present invention has a multilayer structure in which the first aligned winding layer and the second cross winding layer are alternately laminated.

In this case, it is necessary that the cross-wound layer has at least one turn and no more than 20 turns.

At least one cross winding is sufficient to keep the winding wires together properly and loosen the winding wires, but if the number of turns exceeds 20, the winding wires may become too close to each other. This is because the biting occurs.

Since the wires are 4#, thW, and 1 as described above, the winding wires are wound together in an excessively tight state, and punching occurs due to excessive biting between the wires. It is possible to prevent wire breakage during work, completely prevent the wound wire from falling off due to unraveling, and at the same time, it is possible to make the bonding wire of the half body Jζ wire, which improves workability. .

4.1 and 11k] Figure 1 shows the punch ink wire winding susol of the conventional semiconductor device. Figure 2 shows the punch of the semiconductor device according to this bar. The first layer of the multi-layer winding part of the ink wire winding stool, the winding II of one mouth, and the first structure are shown in 7J < 1j side view, and Figure 3 shows the main part of the second layer winding structure as above. Figure 4 shows the winding structure of the third layer as above.
:', is the Abe 1 rule 1141 in Figure 1.

A...Bonting wire 91j, Il spool, 1...Bonding wire, 2...Kawa Suguru, lx...-No?・7th punch ink wire, ly...Second layer bonding wire lz...Third layer bonding wire a...
...single-layer winding section, b...multi-layer winding section Patent applicant
Introducing Mitsubishi Kinro Co., Ltd. Agent Patent Attorney Hide Sako 111” former f/? 5 (river α ÷ −−−−−−− soot 214 ″+4 咄

Claims (1)

[Claims] In a bonding wire wound around a spool into a single-layer winding part and a multi-layer winding part continuous to the single-layer winding part, the above-mentioned multi-layer winding part is alternately made up of aligned winding layers and 1 to 20 cross-winding layers. A bonding wire for a semiconductor device having a multilayer structure and a tW characteristic.