JPS6081603U - Thin film surge voltage absorption device - Google Patents

Thin film surge voltage absorption device

Info

Publication number
JPS6081603U
JPS6081603U JP17307883U JP17307883U JPS6081603U JP S6081603 U JPS6081603 U JP S6081603U JP 17307883 U JP17307883 U JP 17307883U JP 17307883 U JP17307883 U JP 17307883U JP S6081603 U JPS6081603 U JP S6081603U
Authority
JP
Japan
Prior art keywords
thin film
surge voltage
absorption device
voltage absorption
film surge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17307883U
Other languages
Japanese (ja)
Inventor
猪原 淳一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP17307883U priority Critical patent/JPS6081603U/en
Publication of JPS6081603U publication Critical patent/JPS6081603U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、従来例の内観図、第2図は本考案の実施例の
平面図、第3図は本考案の実施例の断面図である。 1・・・・・・酸化亜鉛等の焼結体の円板、2,13・
・・・・・電極、3・・・・・・モールド剤、4・・・
・・・半田、5・・・・・・端子、11.12・・・・
・・N電極、14・・・・・・基板、15・・・・・・
ワイヤー(AI又はAu)、16・・・・・・薄膜(酸
化亜鉛又は酸化亜鉛と他金属との混合物)、17・・・
・・・絶縁体、18・・・・・・接着剤。
FIG. 1 is an internal view of a conventional example, FIG. 2 is a plan view of an embodiment of the present invention, and FIG. 3 is a sectional view of an embodiment of the present invention. 1...Disc of sintered body of zinc oxide, etc., 2,13.
... Electrode, 3 ... Molding agent, 4 ...
...Solder, 5...Terminal, 11.12...
...N electrode, 14...substrate, 15...
Wire (AI or Au), 16... Thin film (zinc oxide or a mixture of zinc oxide and other metals), 17...
...Insulator, 18...Adhesive.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電極面を持った絶縁体上に、酸化亜鉛の薄膜を形成し、
該電極に対向する電極を薄膜上に設けた薄膜サージ電圧
吸収ディバイス。
A thin film of zinc oxide is formed on an insulator with an electrode surface,
A thin film surge voltage absorption device in which an electrode facing the above electrode is provided on a thin film.
JP17307883U 1983-11-10 1983-11-10 Thin film surge voltage absorption device Pending JPS6081603U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17307883U JPS6081603U (en) 1983-11-10 1983-11-10 Thin film surge voltage absorption device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17307883U JPS6081603U (en) 1983-11-10 1983-11-10 Thin film surge voltage absorption device

Publications (1)

Publication Number Publication Date
JPS6081603U true JPS6081603U (en) 1985-06-06

Family

ID=30377126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17307883U Pending JPS6081603U (en) 1983-11-10 1983-11-10 Thin film surge voltage absorption device

Country Status (1)

Country Link
JP (1) JPS6081603U (en)

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