JPS60948B2 - Manufacturing method of solid electrolytic capacitor - Google Patents

Manufacturing method of solid electrolytic capacitor

Info

Publication number
JPS60948B2
JPS60948B2 JP8579080A JP8579080A JPS60948B2 JP S60948 B2 JPS60948 B2 JP S60948B2 JP 8579080 A JP8579080 A JP 8579080A JP 8579080 A JP8579080 A JP 8579080A JP S60948 B2 JPS60948 B2 JP S60948B2
Authority
JP
Japan
Prior art keywords
anode body
anode
heat
top surface
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8579080A
Other languages
Japanese (ja)
Other versions
JPS5619618A (en
Inventor
正晴 大野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
Original Assignee
NEC Home Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd filed Critical NEC Home Electronics Ltd
Priority to JP8579080A priority Critical patent/JPS60948B2/en
Publication of JPS5619618A publication Critical patent/JPS5619618A/en
Publication of JPS60948B2 publication Critical patent/JPS60948B2/en
Expired legal-status Critical Current

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Description

【発明の詳細な説明】 本発明は固体電解コンデンサの製造方法に関し、特に弁
作用を有する金属粉末の成形体よりなる陽極体から導出
された陽極リードへの半導体層形成部村の這い上りを軽
減させることを目的とするものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a solid electrolytic capacitor, and in particular, to reduce creeping of the semiconductor layer forming part onto an anode lead led out from an anode body made of a molded body of metal powder having valve action. The purpose is to

一般に、この種固体電解コンデンサは例えば第亀図に示
すようにタンタル・ニオブ・アルミニウムなどのように
弁作用を有する金属粉末を円柱状に加圧成形し焼結して
なる陽極体Aに予め弁作用を有する金属線を陽極リード
Bとして楢立し、この陽極リードBの突出部分にL形に
屈曲された第1の外部リード線Cを溶接すると共に第2
の外部リード線Dを陽極体Aの周面に酸化層、半導体層
を介して形成された陰極層に半田付けし、陽極リードB
の突出部を含む陽極体Aの周面を樹脂材Eにて被覆して
構成されている。
In general, this type of solid electrolytic capacitor is made by press-molding metal powder having a valve action, such as tantalum, niobium, or aluminum, into a cylindrical shape and sintering the anode body A, as shown in Fig. A functional metal wire is erected as an anode lead B, and a first external lead C bent in an L shape is welded to the protruding portion of this anode lead B.
The external lead wire D is soldered to the cathode layer formed on the circumferential surface of the anode body A through an oxide layer and a semiconductor layer, and the anode lead B
The peripheral surface of the anode body A including the protruding portion thereof is covered with a resin material E.

ところで、陽極体Aは陽極リードBの突出部分に第1の
外部リード線Cを溶接するに先立って、陽極リードBと
共に化成処理によりその表面に酸化層が形成され、さら
に陽極体Aのみを硝酸マンガン溶液などの半導体母液に
一定時間浸潰し陽極体A内に含浸させ、次いで200℃
以上の高温雰囲気中において熱分解反応を起させ陽極体
Aの酸化層上に二酸化マンガンなどの半導体層が形成さ
れている。
By the way, before the first external lead wire C is welded to the protruding portion of the anode lead B, an oxide layer is formed on the surface of the anode body A by chemical conversion treatment together with the anode lead B, and only the anode body A is treated with nitric acid. It is soaked in a semiconductor mother solution such as a manganese solution for a certain period of time to be impregnated into the anode body A, and then heated at 200°C.
A semiconductor layer of manganese dioxide or the like is formed on the oxidized layer of the anode body A by causing a thermal decomposition reaction in the above-mentioned high-temperature atmosphere.

しかし乍ら、この熱分解工程において、高温雰囲気中に
挿入された陽極体Aはそれ自身の温度が急激に上昇し、
内部に含浸された半導体母液が熱分解反応を起し内部よ
り水蒸気、窒素酸化物などの分解ガスが表面層に吹き出
してくるために、表面層における熱分解途中の半導体母
液層に気泡が生じ、これが陽極リードBの突出部分に付
着していわゆる半導体層形成部材の這い上りを生ずる。
However, in this thermal decomposition process, the temperature of the anode body A inserted into the high-temperature atmosphere rises rapidly.
The semiconductor mother liquor impregnated inside causes a thermal decomposition reaction, and decomposed gases such as water vapor and nitrogen oxides blow out from the inside to the surface layer, so bubbles are generated in the semiconductor mother liquor layer in the middle of thermal decomposition in the surface layer. This adheres to the protruding portion of the anode lead B, causing so-called creeping of the semiconductor layer forming member.

通常、半導体母液の含浸−熱分解工程は陽極体Aが多孔
質であることに鑑み数回以上繰り返される関係で、熱分
解回数の増加によって半導体層形成部材の這い上りもさ
らに進行する煩向にある。従って、陽極リードBの突出
部分に第1の外部リード線Cを溶援する際、第.1の外
部リード線Cと這い上った半導体層とが接触して陰極と
陽極とが短絡されてしまい、コンデンサとしての機能を
奏しえなくなるという問題がある。それ故に、従来にあ
っては第2図〜第3図に示すように陽極体Aの頂面部に
テフロンワツシヤFを、それの中心孔に陽極リードBが
挿通されるように装着した構成が採用されている。
Normally, the impregnation-pyrolysis process of the semiconductor mother liquor is repeated several times or more because the anode body A is porous, and as the number of times of thermal decomposition increases, the creeping up of the semiconductor layer forming member tends to progress further. be. Therefore, when attaching the first external lead wire C to the protruding portion of the anode lead B, the first external lead wire C. There is a problem in that the external lead wire C of No. 1 comes into contact with the semiconductor layer that has climbed up, and the cathode and anode are short-circuited, making it impossible to function as a capacitor. Therefore, in the past, a configuration was adopted in which a Teflon washer F was attached to the top surface of the anode body A, and the anode lead B was inserted through the center hole of the Teflon washer F, as shown in FIGS. 2 and 3. ing.

この方法によれば、陽極リードBの突出部分における半
導体層の這い上り現象を効果的に抑制することができる
反面、作業性が悪い上、極めて多大の作業工数を要する
ために量産性に乏しいという欠点がある。本発明はこの
ような点に鑑み、作業性が損なわれることなく、陽極体
から導出された陽極リードへの半導体層形成部材の這い
上りを効果的に抑制でき、かつコンデンサの品位をも高
めることのできる固体電解コンデンサの製造方法を提供
するもので、以下実施例について説明する。
According to this method, although it is possible to effectively suppress the creep-up phenomenon of the semiconductor layer at the protruding portion of the anode lead B, the workability is poor and it requires an extremely large number of man-hours, making it difficult to mass-produce. There are drawbacks. In view of these points, the present invention has an object to effectively suppress the creeping up of the semiconductor layer forming member to the anode lead led out from the anode body without impairing workability, and to also improve the quality of the capacitor. The present invention provides a method for manufacturing a solid electrolytic capacitor, and examples thereof will be described below.

第4図において、1は弁作用を有する金属粉末の成形体
にて構成された陽極体であって、図示例は金属粉末を円
柱状に加圧成形し暁結して形成されている。
In FIG. 4, reference numeral 1 denotes an anode body constituted by a molded body of metal powder having a valve action, and the illustrated example is formed by press-molding metal powder into a cylindrical shape and solidifying it.

2は弁作用を有する金属線よりなり、かつ陽極体1の頂
面部から導出された陽極リードであって、図示例は金属
粉末の加圧成形に先立って、それの中心に楯立して導出
されている。
Reference numeral 2 denotes an anode lead made of a metal wire having a valve action and led out from the top surface of the anode body 1; has been done.

3は陽極体1の頂面部に陽極リード2の根元部分が後述
の方法によって隠蔽されるように被着された耐熱性絶縁
部材であって、例えばフリットガラス、アルミナ微粉末
が好適する。
Reference numeral 3 denotes a heat-resistant insulating member which is attached to the top surface of the anode body 1 so that the root portion of the anode lead 2 is hidden by a method described later, and is preferably made of, for example, frit glass or fine alumina powder.

4は例えばL形に屈曲された第1の外部リード線であっ
て、それの屈曲部4aは陽極リード2の突出部2aに交
叉して溶接されている。
Reference numeral 4 denotes a first external lead wire bent into an L shape, for example, and a bent portion 4a thereof is welded to cross the protrusion 2a of the anode lead 2.

5は例えばストレート状に形成された第2の外部リード
線であって、それの端部は陽極体1の周面に酸化層、半
導体層を介して形成された陰極層(図示せず)に半田部
材6によって接続されている。
Reference numeral 5 denotes a second external lead wire formed in a straight shape, for example, and the end thereof is connected to a cathode layer (not shown) formed on the circumferential surface of the anode body 1 via an oxide layer and a semiconductor layer. They are connected by solder members 6.

7は陽極リード2の突出部2aを含む陽極体1の全周面
を被覆するェポキシ樹脂などの外装絶縁材である。
Reference numeral 7 denotes an exterior insulating material such as epoxy resin that covers the entire circumferential surface of the anode body 1 including the protrusion 2a of the anode lead 2.

次に陽極体1の頂面部に耐熱性絶縁部材3を彼着する具
体的方法の一例を第5図を参照しつつ説明する。
Next, an example of a specific method for attaching the heat-resistant insulating member 3 to the top surface of the anode body 1 will be explained with reference to FIG.

まず同図aに示すように分子量が40〜50万のポリエ
チレンオキサイド40夕をイソプ0ピルアルコール50
0のこ分散させた後、鉛を主成分とする200メッシュ
のフリツトガラス(軟化温度382℃)2000夕と水
2000夕とを加えて充分に燈拝して調製された懸濁液
3″をケース8に入れる。そして帯状の金属板9に固定
された複数の陽極体1を懸濁液3″に浸潰し、引き上げ
る。すると「陽極体1の頂面部には陽極リード2の根元
部分が隠蔽されるように懸濁液3″が付着される。次に
同図bに示すように陽極体1をケース10‘こ入れられ
た水11‘こ、陽極体1の頂面部が浸潰されないように
浸潰し、陽極体1の側面部及び下面部に付着している懸
濁液を除去する。次に同図cに示すように陽極体1より
延びる陽極リード2の中間部分を左右より熱伝導性良好
なる金属部村よりなる支持臭12,12にて支持し、バ
ーナなどの加熱体13,13を陽極体1の頂面部に接近
させ、懸濁液3″における溶剤、バインダーを飛散させ
ると共にフリットガラスを溶融させて頂面部に強固に一
体的に彼着させる。このようにして被着された耐熱性絶
縁部材3を具えた陽極体1を用い、通常の方法によって
第4図に示す固体電解コンデンサを製作した処、半導体
層形成部材の陽極リード2への這い上りは従来(第1図
構成)2〜4%程度発生していたものが、0.1%以下
に減少した。
First, as shown in Figure a, 40 ml of polyethylene oxide with a molecular weight of 400,000 to 500,000 is mixed with 50 ml of isopyl alcohol.
After dispersing the powder, add 2,000 ml of 200 mesh frit glass (softening temperature 382°C) containing lead as the main component and 2,000 ml of water and thoroughly stir the mixture. 8. Then, a plurality of anode bodies 1 fixed to a band-shaped metal plate 9 are immersed in the suspension 3'' and pulled up. Then, the suspension 3'' is applied to the top surface of the anode body 1 so as to hide the root portion of the anode lead 2. Next, as shown in FIG. Remove any adhering suspension. Next, as shown in FIG. 13 is brought close to the top surface of the anode body 1, the solvent and binder in the suspension 3'' are scattered, and the frit glass is melted and firmly and integrally attached to the top surface. The solid electrolytic capacitor shown in FIG. 4 was fabricated using the anode body 1 equipped with the heat-resistant insulating member 3 using a conventional method (see FIG. 1). Composition) What used to occur at about 2-4% has decreased to 0.1% or less.

これによって第1の外部リード線4の陽極リード2への
溶接時に発生する陰極・陽極の短絡不良も無視できる程
度に減少できた。又、陽極リード2の根元部分は陽極体
1の頂面部と共に耐熱性絶縁部村3によって固められて
いるために、酸化層の形成工程後において陽極リード2
に屈曲力が作用しても、それの陽極体1への埋入部分に
亀裂が生じたりすることは皆無となる。
As a result, short circuit failures between the cathode and the anode that occur when the first external lead wire 4 is welded to the anode lead 2 can be reduced to a negligible level. In addition, since the root portion of the anode lead 2 is hardened together with the top surface of the anode body 1 by the heat-resistant insulating layer 3, the anode lead 2 is
Even if a bending force is applied to the anode body 1, there will be no cracks in the part where it is embedded in the anode body 1.

従って、亀裂などによる酸化層の損傷に起因する漏洩電
流などのコンデンサ特性の劣化がないために、コンデン
サを高品位に保つことができる。特に陽極体1の頂面部
への耐熱性絶縁部村3の被着は金属板9に固定された多
数の陽極体に対して同時に行なわれるために、量産性が
著しく向上する。尚「本発明は何ら上記実施例にのみ制
約されることなく、例えば耐熱性絶縁部材はガラスフリ
ット、アルミナの他、シリカ「ジルコニウムなどの微粉
末を用いることもできるし、又、陽極体の不所望部分に
付着した懸濁液の除去は水の他、有機溶剤などによって
行うこともできる。
Therefore, since there is no deterioration of capacitor characteristics such as leakage current due to damage to the oxide layer due to cracks or the like, the capacitor can be maintained in high quality. In particular, since the heat-resistant insulating layer 3 is applied to the top surface of the anode body 1 simultaneously for a large number of anode bodies fixed to the metal plate 9, mass productivity is significantly improved. The present invention is not limited to the above-mentioned embodiments; for example, the heat-resistant insulating member can be made of glass frit, alumina, silica, zirconium, or other fine powder, or The suspension adhering to a desired portion can be removed using not only water but also an organic solvent.

以上のように本発明によれば、陽極リードの根元部分に
半導体層形成部材の熱分解工程の温度に充分耐える耐熱
性絶縁部村が被着されているために陽極リードへの半導
体層形成部材の這い上りを著しく軽減できるし、又、陽
極リードの補強によって陽極体の亀裂によるコンデソサ
特性の劣化を防止しコンデンサを高品位に保つことがで
きる。
As described above, according to the present invention, since the heat-resistant insulating member that can sufficiently withstand the temperature of the thermal decomposition process of the semiconductor layer forming member is attached to the root portion of the anode lead, the semiconductor layer forming member on the anode lead is coated. In addition, by reinforcing the anode lead, it is possible to prevent deterioration of the capacitor characteristics due to cracks in the anode body and maintain the high quality of the capacitor.

【図面の簡単な説明】[Brief explanation of drawings]

第1図〜第2図は従来例の夫々異った実施例を示す正断
面図、第3図は第2図の要部分鱗斜視図、第4図は本発
明に係る固体電解コンデンサの一実施例を示す正断面図
、第5図は本発明方法を説明するための正断面図である
。 オー図 矛2図 才3図 才4図 矛S図
1 to 2 are front sectional views showing different embodiments of the conventional example, FIG. 3 is a perspective view of the main part of FIG. 2, and FIG. FIG. 5 is a front sectional view for explaining the method of the present invention. O figure, 2 figures, 3 figures, 4 figures, S figure

Claims (1)

【特許請求の範囲】[Claims] 1 弁作用を有する金属粉末の成形体よりなる陽極体を
耐熱性絶縁部材を含む懸濁液に、それの頂面部より導出
した弁作用を有する金属線よりなる陽極リードの根元部
分が浸漬されるように浸漬する工程と、陽極体の頂面部
を除く周面に付着した懸濁液を除去する工程と、陽極体
の頂面部の懸濁液を加熱し、陽極体及び陽極リードに対
して耐熱性絶縁部材を一体化する工程と、耐熱性絶縁部
材を一体化した陽極体に酸化層を形成する工程と、陽極
体の酸化層上に半導体層を形成する工程とを含むことを
特徴とする固体電解コンデンサの製造方法。
1. An anode body made of a molded body of metal powder having a valve action is immersed in a suspension containing a heat-resistant insulating member, and the base portion of an anode lead made of a metal wire having a valve action led out from the top surface of the anode body is immersed. A process of immersing the anode body in a similar manner, a process of removing the suspension adhering to the circumferential surface except for the top surface of the anode body, and a process of heating the suspension liquid on the top surface of the anode body to make the anode body and anode lead heat-resistant. The method is characterized by comprising the steps of: integrating a heat-resistant insulating member; forming an oxide layer on the anode body into which the heat-resistant insulating member is integrated; and forming a semiconductor layer on the oxide layer of the anode body. Method of manufacturing solid electrolytic capacitors.
JP8579080A 1980-06-23 1980-06-23 Manufacturing method of solid electrolytic capacitor Expired JPS60948B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8579080A JPS60948B2 (en) 1980-06-23 1980-06-23 Manufacturing method of solid electrolytic capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8579080A JPS60948B2 (en) 1980-06-23 1980-06-23 Manufacturing method of solid electrolytic capacitor

Publications (2)

Publication Number Publication Date
JPS5619618A JPS5619618A (en) 1981-02-24
JPS60948B2 true JPS60948B2 (en) 1985-01-11

Family

ID=13868676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8579080A Expired JPS60948B2 (en) 1980-06-23 1980-06-23 Manufacturing method of solid electrolytic capacitor

Country Status (1)

Country Link
JP (1) JPS60948B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6699647B2 (en) 2000-12-21 2004-03-02 Eastman Kodak Company High speed photothermographic materials containing tellurium compounds and methods of using same
US6733959B2 (en) 2001-08-06 2004-05-11 Eastman Kodak Company Chemically sensitized aqueous-based photothermographic emulsions and materials and methods of using same

Also Published As

Publication number Publication date
JPS5619618A (en) 1981-02-24

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