JPS609875A - Photochemical reaction device - Google Patents
Photochemical reaction deviceInfo
- Publication number
- JPS609875A JPS609875A JP11552883A JP11552883A JPS609875A JP S609875 A JPS609875 A JP S609875A JP 11552883 A JP11552883 A JP 11552883A JP 11552883 A JP11552883 A JP 11552883A JP S609875 A JPS609875 A JP S609875A
- Authority
- JP
- Japan
- Prior art keywords
- ultraviolet light
- light source
- gas
- photochemical
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006552 photochemical reaction Methods 0.000 title claims description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 8
- 238000005192 partition Methods 0.000 claims description 4
- 239000012495 reaction gas Substances 0.000 claims description 4
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 230000005284 excitation Effects 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 230000008313 sensitization Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002730 mercury Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は２００ｎｍ以下の紫外光を照射して１反応ガス
を励起させ、もって化学反応を促進せしめる所謂光化学
反応装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a so-called photochemical reaction device that excites a reactive gas by irradiating it with ultraviolet light of 200 nm or less, thereby promoting a chemical reaction.
近年、集積回路装置の微細化、高密度化に伴い、製造工
程の低温化が非常に重要となってきている。In recent years, with the miniaturization and increase in density of integrated circuit devices, lowering the temperature of the manufacturing process has become extremely important.
特に４００℃以下の低温に於ける膜形成を可能にする方
法とにプラズマ気相成長法と供に光化学気相成長法（Ｐ
ｈｏｔｏ −Ｃｈｅｍｉｃａｌ Ｖａｐｏｕｒ Ｄｅｐ
ｏｓｉｔｉｏｎ以下Ｐｈｏｔｏ−ＣＶＤ法と略す）が注
目されている。In particular, methods that enable film formation at low temperatures below 400°C include plasma vapor deposition and photochemical vapor deposition (PPV).
hoto -Chemical Vapor Dep
(hereinafter abbreviated as Photo-CVD method) is attracting attention.
このＰｈｏｔｏ−ＣＶＤ法はプラズマ気相成長法に対し
膜が成長されるべき基板への損傷がないという利点をも
っている。This Photo-CVD method has an advantage over plasma vapor deposition method in that there is no damage to the substrate on which the film is grown.
このＰｈｏｔｏ−ＣＶＤ法の中で水銀蒸気を反応ガスと
混合させ、紫外光によって先ず水銀原子を光励起させ化
学反応を促進させる。所謂水銀増感法では、２０００ｍ
以上の長波長の紫外光によって光化学反応を生じさせる
事ができる。In this Photo-CVD method, mercury vapor is mixed with a reaction gas, and mercury atoms are first photo-excited using ultraviolet light to promote a chemical reaction. In the so-called mercury sensitization method, 2000 m
Photochemical reactions can be caused by ultraviolet light with longer wavelengths.
しかしながらこの水銀増感法では堆積した膜の中に水銀
原子が取り込まれるとか排気ガス中に含まれる水銀原子
の処理が必要である等の問題があった。However, this mercury sensitization method has problems such as mercury atoms being incorporated into the deposited film and the need to treat mercury atoms contained in exhaust gas.
他方、２００ｎｍ以下の波長を用いる場合には。On the other hand, when using a wavelength of 200 nm or less.
水銀蒸気等の増感剤は不要となり、直接に反応ガスを光
によって励起する事が出来る。この直接法ノＰｈｏｔｏ
−ＣＶ Ｄに於いては、上述の如（２００ｎｍ以下の
波長の紫外光を用いるが、この２００ｎｍ以下の紫外光
１例えば水銀の吸収線に対応する１８４．９ｎｍの紫外
光等は、空気中の酸素に吸収されてしまうという大きな
問題があった。更に又、空気中の酸素０２やＮ２は、紫
外光で励起された後オゾン０３やオキシナイトライドを
生じるが。There is no need for a sensitizer such as mercury vapor, and the reaction gas can be directly excited by light. This direct method Photo
- In CV D, ultraviolet light with a wavelength of 200 nm or less is used as described above. There was a big problem that it was absorbed by oxygen.Furthermore, oxygen 02 and N2 in the air produce ozone 03 and oxynitride after being excited by ultraviolet light.
これらのガスは人体に害のあるガスであり、この処理が
問題となるという大きな問題もあった。These gases are harmful to the human body, and there was a big problem in how they were disposed of.
従って１本発明の目的は上記の問題を除去した。Therefore, one object of the present invention is to eliminate the above-mentioned problems.
直接法の光化学反応装置たとえば光化学気相成長装置を
提供する事である。It is an object of the present invention to provide a direct method photochemical reaction device, such as a photochemical vapor deposition device.
本発明の光化学反応装置は光源を含み、該光源から照射
される光が通過する気体領域を、紫外光の減衰が問題に
ならない程度の、１気圧より低い圧力に保つ事を特徴と
する。The photochemical reaction device of the present invention includes a light source, and is characterized in that the gas region through which the light irradiated from the light source passes is maintained at a pressure lower than 1 atmosphere, to the extent that attenuation of ultraviolet light does not become a problem.
すなわち本発明の特徴は、紫外光を放射する紫外光源に
よって反応ガスを照射し、光化学反応を促進せしめる光
化学反応気相成長法に於いて、紫外光源部と反応部が該
紫外光を透過させる隔壁で分離され、かつ、紫外光線が
到達しうる気体領域を大気圧より低い圧力に保つ電光化
学反応装置にある。そして紫外光を透過させる隔壁の両
壁面の各々に接する気体領域の圧力差を常に一定に保つ
ようにすることができる。That is, the feature of the present invention is that in the photochemical reaction vapor phase growth method in which a reaction gas is irradiated with an ultraviolet light source that emits ultraviolet light to promote a photochemical reaction, the ultraviolet light source part and the reaction part are separated by a partition wall that transmits the ultraviolet light. in an electrophotochemical reaction device that maintains the gas region, which is separated by ultraviolet light and accessible to ultraviolet light, at a pressure lower than atmospheric pressure. In addition, the pressure difference between the gas regions in contact with both wall surfaces of the partition wall that transmits ultraviolet light can be kept constant.
本発明の光化学反応装置たとえば光化学気相成長装置は
、光源から照射される紫外光は減圧に保たれた空間のみ
を照射するから、該紫外光の減衰が生じず、かつ減圧に
保たれている空間は、外部大気から遮蔽されている為、
真空中の残留ガスの励起によって生じるオゾンやオキシ
ナイトライド等の有毒ガスの問題が生じないという効果
を有する様になる。In the photochemical reaction device of the present invention, such as a photochemical vapor deposition device, the ultraviolet light emitted from the light source irradiates only a space maintained at a reduced pressure, so that attenuation of the ultraviolet light does not occur and the pressure is maintained at reduced pressure. Because the space is shielded from the outside atmosphere,
This has the effect of eliminating the problem of toxic gases such as ozone and oxynitride produced by excitation of residual gas in vacuum.
本発明の光化学反応装置は、光源から放射される紫外光
の減衰がない為に１反応部に到達する光の強度が強く、
光化学反応をより活発に生じさせる事が出来るという大
きな利点と、オゾンやオキシナイトライド等の励起ガス
の発生がないため。In the photochemical reaction device of the present invention, since there is no attenuation of the ultraviolet light emitted from the light source, the intensity of the light that reaches one reaction part is strong.
It has the great advantage of being able to make photochemical reactions more active and does not generate excited gases such as ozone or oxynitride.
安全上非常に有利であるという利点をもつ様になる。This has the advantage of being extremely advantageous in terms of safety.
次に本発明をよりよく理解するために図面を用いて説明
する。Next, the present invention will be explained using drawings in order to better understand the present invention.
第１図は従来の光化学気相成長装置を説明するための図
であり、従来の光化学気相成長装置１０１はガスコント
ロールシステム１０２と、サセプター１０３及び２００
ｎｍ以下の波長の紫外光を透過させる窓１０４をもつ反
応チャンバー１０５と。FIG. 1 is a diagram for explaining a conventional photochemical vapor deposition apparatus. A conventional photochemical vapor deposition apparatus 101 includes a gas control system 102, a susceptor 103 and
A reaction chamber 105 having a window 104 that transmits ultraviolet light having a wavelength of nm or less.
紫外光源１０６と、反射板１０７と、ガスを排気するた
めの真空ポンプ１０８とから成る。この従来の光化学気
相成長装置は、紫外光源１０６が大気中に位置している
為、該紫外光源１０６から放射された２００ｎｍ以下の
紫外光によって励起された酸素や窒素から発生したオゾ
ンやオキシナイトライドが人体へ悪影響を与えるという
大きな欠点があった。It consists of an ultraviolet light source 106, a reflection plate 107, and a vacuum pump 108 for exhausting gas. In this conventional photochemical vapor deposition apparatus, since the ultraviolet light source 106 is located in the atmosphere, ozone and oxynite are generated from oxygen and nitrogen excited by ultraviolet light of 200 nm or less emitted from the ultraviolet light source 106. The major drawback was that the ride had a negative impact on the human body.
第２図は本発明の第１の実施例を説明するための図であ
る。本発明の第１の実施例の光化学気相５−
成長装置２０１は、ガスコントロールシステム２０２と
、サセプター２０３及び紫外光を透過させる窓２０４を
もつ反応チャンバー２０５と、紫外光源２０６と１反射
板２０７と、ガスを排気する真空ポンプ２０８と、該紫
外光源２０６及び反射板２０７を収容する真空容器２０
９と、該真空容器２０９を真空に引く真空ポンプ２１０
とを有している。この第１の実施例の光化学気相成長装
置に於いては、紫外光源２０６は真空容器２０９内に収
容されているから、大気中のガスの吸収による紫外光の
減衰や、オゾンやオキシナイトライドの発生がないとい
う大きな利点をもつ。FIG. 2 is a diagram for explaining the first embodiment of the present invention. The photochemical vapor phase 5-growth apparatus 201 of the first embodiment of the present invention includes a gas control system 202, a reaction chamber 205 having a susceptor 203 and a window 204 that transmits ultraviolet light, an ultraviolet light source 206, and a reflection plate 207. , a vacuum pump 208 that exhausts gas, and a vacuum container 20 that accommodates the ultraviolet light source 206 and reflector 207.
9, and a vacuum pump 210 that evacuates the vacuum container 209.
It has In the photochemical vapor deposition apparatus of the first embodiment, since the ultraviolet light source 206 is housed in the vacuum container 209, the ultraviolet light is attenuated by absorption of gases in the atmosphere, ozone and oxynitride. It has the great advantage of not causing any
第３図は本発明の第２の実施例を説明するための図であ
る。本発明の第２の実施例の光化学気相成長装置３０１
は、特に説明しない部分は第２図に示した本発明の第１
の実施例と同じ番号で示すが、この第２の実施例では、
真空容器２０９の内部を真空にするのに１反応チャンバ
ー２０５と。FIG. 3 is a diagram for explaining a second embodiment of the present invention. Photochemical vapor deposition apparatus 301 according to the second embodiment of the present invention
The parts not particularly explained are the same as the first part of the present invention shown in FIG.
In this second embodiment,
One reaction chamber 205 is used to evacuate the inside of the vacuum container 209 .
該真空容器２０９の間をガス配管３０２と圧力制御計３
０３を介して、結合し真空容器２０９内部−６＝
の真空度と反応チャンバ−２０５内部の真空度を常に一
定の圧力差に、一般的には真空容器２０９内の圧力を若
干高めに保つ構造をとる。この本発明の第２の実施例に
於いては１本発明の第１の実施例に於ける利点に加えて
紫外光を透過させる窓２０４が機械的強）辻の小さい、
螢石等の材料で構成された場合でも、真空容器２０９と
反応チャンバー２０５の差圧を常に一定に保てる為に反
応チャンバー２０５の真壁度の急激な変化があっても窓
２０４が圧力差の為に破壊するという危険がなくなると
いう利点を有する様になる。A gas pipe 302 and a pressure controller 3 are connected between the vacuum container 209.
03, the vacuum level inside the vacuum vessel 209 and the vacuum level inside the reaction chamber 205 are always kept at a constant pressure difference, and generally the pressure inside the vacuum vessel 209 is maintained at a slightly higher level. Take. In this second embodiment of the present invention, in addition to the advantages of the first embodiment of the present invention, the window 204 that transmits ultraviolet light is mechanically strong, has small edges,
Even when made of materials such as fluorite, the pressure difference between the vacuum container 209 and the reaction chamber 205 can always be kept constant. This has the advantage that there is no danger of it being destroyed.
尚、実施例では光化学気相成長装置について述べて来た
が、本発明の装置の構造は２００ｎｍ以下の波長の紫外
光源を用いる光化学エツチング装置や、紫外線によって
基板表面を清浄化する光化学洗浄装置にも適用できる争
は明白であろう。Although the embodiments have described a photochemical vapor deposition apparatus, the structure of the apparatus of the present invention can also be applied to a photochemical etching apparatus that uses an ultraviolet light source with a wavelength of 200 nm or less, or a photochemical cleaning apparatus that cleans a substrate surface with ultraviolet light. It is clear that there are disputes to which the same applies.
第１図は従来の光化学気相成長を説明するための図、第
２図は本発明の第１の実施例の光化学気相成長装置を説
明するための図、第３図は本発明の第２の実施例の光化
学気相成長装置を説明するための図である。
尚１図において、１０１，２０１，３０１・・明光化学
気相成長装置、１０２，２０２・・曲ガスコントロール
システム％ １０３，２０３・・曲サセプター、ｌＯ４
，２ｏ４・・曲窓、１０５，２０５−曲反応−ｆ−ｗン
バー、１０６，２０６・・・用紫外光源、１０７，２０
７・・−・・・反射板、１０８，２０８，２１０・・曲
真空ポンプ。
２０９・・・・・・真空容器、３ｏ２・・曲ガス配管、
３ｏ３・・・・・・圧力制御計である。
￥−Ｉ Ｔ￥］
隼 ２ 回FIG. 1 is a diagram for explaining conventional photochemical vapor deposition, FIG. 2 is a diagram for explaining a photochemical vapor deposition apparatus according to a first embodiment of the present invention, and FIG. 3 is a diagram for explaining a photochemical vapor deposition apparatus according to a first embodiment of the present invention. FIG. 2 is a diagram for explaining a photochemical vapor deposition apparatus according to a second embodiment. In Figure 1, 101,201,301... Meiko chemical vapor deposition apparatus, 102,202... curved gas control system % 103,203... curved susceptor, lO4
, 2o4... curved window, 105,205-curved reaction-f-w number, 106,206... ultraviolet light source, 107,20
7...Reflector, 108,208,210...Curved vacuum pump. 209...Vacuum container, 3o2...Curved gas piping,
3o3...Pressure control gauge. ￥-IT￥] Hayabusa 2 times
Claims (2)
射し、光化学反応を促進せしめる光化学反応気相成長法
に於いて、紫外光源部と反応部とが該紫外光を透過させ
る隔壁で分離され、かつ該紫外光源部は大気圧より低い
圧力に保たれていることを特徴とする光化学反応装置。(1) In the photochemical vapor phase growth method in which a reaction gas is irradiated with an ultraviolet light source that emits ultraviolet light to promote photochemical reactions, the ultraviolet light source section and the reaction section are separated by a partition wall that transmits the ultraviolet light. , and the ultraviolet light source section is maintained at a pressure lower than atmospheric pressure.
両気体領域の圧力は常に大気圧より低い圧力値に保たれ
てかつ該両気体領域の圧力差を一定に保つようにしたこ
とを特徴とする特許請求の範囲第（１）項記載の光化学
反応装置。(2) The pressure of both gas regions in contact with both wall surfaces of the partition wall that transmits ultraviolet light is always maintained at a pressure value lower than atmospheric pressure, and the pressure difference between the two gas regions is kept constant. A photochemical reaction device according to claim (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11552883A JPS609875A (en) | 1983-06-27 | 1983-06-27 | Photochemical reaction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11552883A JPS609875A (en) | 1983-06-27 | 1983-06-27 | Photochemical reaction device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS609875A true JPS609875A (en) | 1985-01-18 |
Family
ID=14664756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11552883A Pending JPS609875A (en) | 1983-06-27 | 1983-06-27 | Photochemical reaction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS609875A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6228871U (en) * | 1985-07-31 | 1987-02-21 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59129770A (en) * | 1983-01-18 | 1984-07-26 | Ushio Inc | Photochemical vapor deposition device |
-
1983
- 1983-06-27 JP JP11552883A patent/JPS609875A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59129770A (en) * | 1983-01-18 | 1984-07-26 | Ushio Inc | Photochemical vapor deposition device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6228871U (en) * | 1985-07-31 | 1987-02-21 |
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