JPS61102791A - Manufacture of macromolecular piezoelectric body, excellent in thermal stability - Google Patents

Manufacture of macromolecular piezoelectric body, excellent in thermal stability

Info

Publication number
JPS61102791A
JPS61102791A JP59223896A JP22389684A JPS61102791A JP S61102791 A JPS61102791 A JP S61102791A JP 59223896 A JP59223896 A JP 59223896A JP 22389684 A JP22389684 A JP 22389684A JP S61102791 A JPS61102791 A JP S61102791A
Authority
JP
Japan
Prior art keywords
film
vinylidene fluoride
melting point
copolymer
thermal stability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59223896A
Other languages
Japanese (ja)
Other versions
JPH0376598B2 (en
Inventor
Nobuko Minato
湊 伸子
Keiko Koga
啓子 古賀
Koji Daito
弘二 大東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to JP59223896A priority Critical patent/JPS61102791A/en
Publication of JPS61102791A publication Critical patent/JPS61102791A/en
Publication of JPH0376598B2 publication Critical patent/JPH0376598B2/ja
Granted legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/09Forming piezoelectric or electrostrictive materials
    • H10N30/098Forming organic materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

PURPOSE:To improve piezoelectric property, thermal stability and film forming property, by fusing a copolymer of vinylidene fluoride and tetrafluoroethylene, whose composition of vinylidene fluoride is 72-87mol% at a melting point or higher, slowly cooling the copolymer, crystallizing the copolymer, and performing polling. CONSTITUTION:For example, dimethyl formamide solution of a copolymer of vinylidene fluoride and tetrafluoroethylene, whose composition of vinylidene fluoride is 81mol%, is made to flow and extended on a glass plate. The solvent is vaporizedat a normal temperature under the pressure reduced state. The melting point of the film is Tm=124 deg.C. The film undergoes heat treatment for one hour at 141 deg.C without separating the film from the glass plate. The film is slowly cooled (2 deg.C/min). Aluminum is evaporated on both surfaces of the film. The film is used as an electrode. A triangular voltage is applied, and an inverted current is measured. During this period, polling is performed. The piezoelectric film obtained in this way has an electro-mechanical coupling constant of Kt=0.207 in the direction of the thickness and the melting point of Tm=143 deg.C.

Description

【発明の詳細な説明】 (イ)産業上の利用分野 本庁用は、圧電性J3よび熱安定性に浸れた高分子圧電
体の製^;b方法に関する。
DETAILED DESCRIPTION OF THE INVENTION (a) Industrial Application Field The present invention relates to a method for producing a polymeric piezoelectric material endowed with piezoelectricity and thermal stability.

(ロ)従来の技術 フッ化ビニリデンとテトラフルオロエチレンの共重合体
は、圧゛心性を持つことが知られている(例えば、高分
子学会子「)集、28巻、9号、1794頁、1979
年)。
(b) Conventional technology The copolymer of vinylidene fluoride and tetrafluoroethylene is known to have pressure centrality (for example, Kobunshi Gakkai Shishu, Vol. 28, No. 9, p. 1794, 1979
Year).

また、フッ化ビニリデンとトリフルオロエチレンの共重
合体も圧電性を持つが、この共重合体は融点(Tm )
以下に強誘電−常誘電相転移点(T19’)を持つので
、実用可能な圧電性を得るためには強誘電−常誘電相転
移点(Till’)以上、融点(Tm )以下で熱処理
し、ポーリングすることが有効であると判っている。
In addition, a copolymer of vinylidene fluoride and trifluoroethylene also has piezoelectricity, but this copolymer has a melting point (Tm)
Since the ferroelectric-paraelectric phase transition point (T19') is as follows, in order to obtain practical piezoelectricity, heat treatment is required at a temperature above the ferroelectric-paraelectric phase transition point (Till') and below the melting point (Tm). , it has been found effective to poll.

これに対して、フッ化ビニリデンとテI−ラフルオ口エ
チレンの共重合体では、溶液から製膜した未延伸物、ま
たは溶融押出しにより急冷糸i′1下で製膜した未延伸
物は融点(Tm )以下に明確な強誘電−常誘電相転移
点(1”m ’ )がないため、これらを融点(Tm 
)以下で熱処理したのでは結晶化度が向上せず、実用可
能な圧電性が11ノられない。
On the other hand, in the case of a copolymer of vinylidene fluoride and TeI-Rafluoroethylene, an undrawn film formed from a solution or an undrawn film formed by melt extrusion using a quenched thread i'1 has a melting point ( Since there is no clear ferroelectric-paraelectric phase transition point (1"m') below the melting point (Tm)
) If heat treatment is performed below, the degree of crystallinity will not improve and practical piezoelectricity will not be achieved.

そこで従来は、結晶化度を向上させる目的で、熱処理前
に延伸工程を加えるかまたは高圧で結晶化する方法を行
なっていた。
Conventionally, in order to improve the degree of crystallinity, methods of adding a stretching step or crystallizing under high pressure before heat treatment have been carried out.

(ハ)発明が解決しようとする問題点 熱処理前に延伸工程を加える上述の方法は、厚みの制御
が難しいという欠点がある。しかも、このようにして作
ったフィルムは、融点(Tm)が低く熱安定性がよくな
い。また、高圧で結晶化する方法は処理が繁雑であり生
産性に劣っている。
(c) Problems to be Solved by the Invention The above method of adding a stretching step before heat treatment has the disadvantage that it is difficult to control the thickness. Moreover, the film produced in this manner has a low melting point (Tm) and poor thermal stability. Furthermore, the method of crystallization under high pressure requires complicated processing and is inferior in productivity.

本紀明番よ、かかる従来技術の欠点に鑑み、圧電性、熱
安定性おにび製膜性の1蔓れた高分子圧電体のI XN
方法を1足供することを目的とする。
Dear Akira Honki, in view of the shortcomings of the prior art, I
The purpose is to provide a method.

(ニ)問題点を解決するための手段 本発明においては、フッ化ビニリデン組成が72〜.ε
〕7ヒ、ル9(、のフッ化ビニリデンとテトラフルオロ
エチレンの共重合体を融点(Tm )以上で融解させ、
そこから徐冷して結晶化させ、ポーリングする。この場
合、徐冷とは精品化温度領域を通過する際の冷W速度が
10℃/分以下での冷却を愚昧する。さらに好ましくは
、5℃/分以下、より好ましくは2℃/分以下である。
(d) Means for Solving the Problems In the present invention, the vinylidene fluoride composition is 72 to . ε
[7] Melting the vinylidene fluoride and tetrafluoroethylene copolymer of 9 () above the melting point (Tm),
From there, it is slowly cooled to crystallize and polled. In this case, slow cooling does not mean cooling at a cooling W rate of 10° C./min or less when passing through the refining temperature region. More preferably, it is 5°C/min or less, more preferably 2°C/min or less.

また、ポーリングのための電圧印加は、徐冷時から行な
ってもよいし′、あるいは冷却後行なってもよい。後者
の場合、ポーリング温度は融点を越えない温度であれば
任意の温度でよい。この結果得られる圧電1ホtま、従
来の延伸工程を加えたものより一般的にa点(1m)が
高くなる。しかも、本発明の方法で作った圧電体は、熱
安定性のよい厚み方向の電気礪械結合定数(K()を持
ち、融点(Tm )直下まで実用可能なKtを維持する
ことがでさる。
Further, voltage application for poling may be performed during slow cooling, or may be performed after cooling. In the latter case, the poling temperature may be any temperature that does not exceed the melting point. The resulting piezoelectric film generally has a point a (1 m) higher than that obtained by adding a conventional stretching process. Moreover, the piezoelectric material made by the method of the present invention has an electromechanical coupling constant (K()) in the thickness direction with good thermal stability, and can maintain a practical Kt up to just below the melting point (Tm). .

結合定数(K【)の熱安定性がよく、融点(TIll)
直下まで実用可能な埴を維持する圧電体1%るためには
、フッ化ビニリデンとテトラフルオロエチレンの共重合
体でフッ化ごニリデン組成が72〜87モル%の範囲で
あれば製膜方法には制限がない。すな°わち、溶液から
のキャスト製膜、ホットプレスによる製膜、あるいは押
出し製Ilダなどの何れでも本発明の適用が可能である
Good thermal stability of binding constant (K), melting point (TIll)
In order to maintain a piezoelectric material of 1% that can be used for practical purposes right up to the surface, it is necessary to use a copolymer of vinylidene fluoride and tetrafluoroethylene with a composition of 72 to 87 mol% in the film forming method. is unlimited. That is, the present invention can be applied to any method such as cast film formation from a solution, hot press film formation, or extrusion film formation.

以下、本発明を実施例および比較例を用いて説明する。The present invention will be explained below using Examples and Comparative Examples.

・実施例1 (フッ化ビニリデン組成72モル%、未延伸、溶融結晶
化フィルム) フッ化ビニリデン組成72モル%のフッ化ビニリデン−
テトラフルオロエチレン共重合体のジメチルホルムアミ
ド溶液をガラス板上に流諷し、常温、減圧下で溶媒を気
化させた。このフィルムの融点は1’m=136℃であ
った。これをガラス板かIうはがさずに、180℃で1
時間保った後、徐冷(2℃/′分)した。このフィルム
の両面にアルミニウムを然看して電極として用い、ポー
リングを行なった(ポーリング温度Tp=100℃、ポ
ーリング電圧E11=900KV/Cil、ポーリング
時間tp−30分)。
- Example 1 (vinylidene fluoride composition 72 mol%, unstretched, melt crystallized film) Vinylidene fluoride composition 72 mol% vinylidene fluoride -
A dimethylformamide solution of the tetrafluoroethylene copolymer was poured onto a glass plate, and the solvent was vaporized at room temperature and under reduced pressure. The melting point of this film was 1'm=136°C. Heat this to a glass plate at 180℃ without removing it.
After holding for a certain period of time, the mixture was slowly cooled (2° C./min). Poling was performed using aluminum as electrodes on both sides of this film (poling temperature Tp=100° C., poling voltage E11=900 KV/Cil, poling time tp-30 minutes).

こうしテirIラレタ圧電膜はKt−0,197、丁m
−141℃であった。このフィルムの熱安定性は第1図
の記号○で示す通りである。なお、結合定数(Kt )
の熱安定性の測定は、試料をオーブンの中に10分間入
れておき、空温で結合定数(Kt)を測定することを同
一試料で順次温度を上げて繰り返づことによった(以下
の熱安定性の測定はすべてこの方法による。)。第1図
から結合定EQ(Kt)は融点(Tm )付近までほと
んど減少せず、安定であることが判る。なお、第1図に
おいて縦軸は、昇温する過程を経過しない結合定数(K
t)で規格化し!ζものである。
The piezoelectric film of this type is Kt-0,197, 10m
The temperature was -141°C. The thermal stability of this film is as indicated by the symbol ◯ in FIG. In addition, the coupling constant (Kt)
The thermal stability was measured by placing the sample in an oven for 10 minutes and measuring the binding constant (Kt) at air temperature, which was then repeated with the same sample at successively higher temperatures (hereinafter referred to as Kt). All thermal stability measurements were made using this method.) From FIG. 1, it can be seen that the bond constant EQ (Kt) hardly decreases until near the melting point (Tm) and is stable. In Figure 1, the vertical axis represents the binding constant (K
Standardize with t)! It is a ζ thing.

・実施例2 (フッ化ごニリデン組成81モル%、未延伸、溶融結晶
化フィルム) フッ化ビニリデン組成81モル%のフッ化ごニリデンー
テトラフルオロエチレン共モ合体のジメチルホルムアミ
ド溶液を、ガラス板」二に流麗し、常温、減圧下で溶媒
を気化させた。このフィルムの融点はTm=1−24℃
であった。これをガラス板からはがさずに、141℃で
1時間熱処理した後、徐冷(2℃/分)した。このフィ
ルムの両面にアルミニウムを蒸着して電極として用い、
三角波電圧を印加し反転電流を測定しながらポーリング
を行なった(Tl)=至fig、Ep−1145KV/
cm、周波数0.011−1z、反転口t110回)。
・Example 2 (Nylidene fluoride composition: 81 mol%, unstretched, melt-crystallized film) A dimethylformamide solution of a polynylidene fluoride-tetrafluoroethylene conjugate having a vinylidene fluoride composition of 81 mol% was placed on a glass plate. Second, the solvent was evaporated at room temperature and under reduced pressure. The melting point of this film is Tm=1-24℃
Met. This was heat-treated at 141° C. for 1 hour without being removed from the glass plate, and then slowly cooled (2° C./min). Aluminum is vapor-deposited on both sides of this film and used as an electrode.
Poling was performed while applying a triangular wave voltage and measuring the reversal current (Tl) = to fig, Ep-1145KV/
cm, frequency 0.011-1z, inversion mouth t110 times).

こうして得られた圧電膜は、Kt−0,207、Tm=
143℃であった。このフィルムの熱安定性は第1図の
記号△で示す通りである。
The piezoelectric film thus obtained is Kt-0,207, Tm=
The temperature was 143°C. The thermal stability of this film is as indicated by the symbol △ in FIG.

このフィルムのポーリング時の反転10回目の反転電流
の測定t7:宋を第2図に示す。なお、この測定結果で
はフィルム自体のコンデンサーの効果で流れる電流を除
いている。
Measurement of the reversal current at the 10th reversal during poling of this film t7: Song is shown in FIG. Note that this measurement result excludes the current flowing due to the effect of the capacitor of the film itself.

反転電流半値幅△Ec =41 、8KV、/am、残
留分極Pr=7.1μC/cJである。八ECが小さく
残留分子4i(Pr)が人さくなっており、ポーリング
によっ′C21]果的に分極されていることを示してい
る。
Reversal current half width ΔEc = 41, 8 KV, /am, residual polarization Pr = 7.1 μC/cJ. 8EC is small and the residual molecule 4i (Pr) is small, indicating that it has been effectively polarized by poling.

・実施例3 (フッ化ビニリデン組成82モル%、未延伸、溶融結晶
化フィルム) フッ化ビニリデン組成82モル%のフッ化ビニリfンー
テトラフルオロエチレン共重合体のジメチルホルム)′
ミド溶液をガラス板上に流諷し、常温、減JIEトC溶
媒を気化させた。このフィルムのFAj! +、’、i
 lよ1m =124℃であった。これをガラス板から
はかさずに、180℃まで昇温した後、徐冷(2℃/分
)した。このフィルムの両面にアルミニムを蒸nして電
極として用い、三角波電圧を印lJロシ、反転電流を測
定しながらポーリングを行な、1  つた( T−p 
=室温、Ep =923KV/cm、 周波3’10.
 ()111z、反転回数10回)。
・Example 3 (vinylidene fluoride composition 82 mol%, unstretched, melt crystallized film) Vinylidene fluoride-tetrafluoroethylene copolymer dimethylform with vinylidene fluoride composition 82 mol%)'
The Mido solution was poured onto a glass plate, and the reduced JIE toC solvent was vaporized at room temperature. FAj of this film! +,',i
1 m = 124°C. This was heated to 180° C. without being removed from the glass plate, and then slowly cooled (2° C./min). Aluminum was vaporized on both sides of this film and used as electrodes, a triangular wave voltage was applied to the film, and poling was performed while measuring the reversal current.
= room temperature, Ep =923KV/cm, frequency 3'10.
()111z, number of reversals 10 times).

こうしClqられたf+Ti躾は、Kt=0.189、
Tlll−141℃であつlζ。このフィルムのポーリ
ング時の反転10回目の反転゛電流の測定結果(よ第2
図と同様の鋭いピークとなった。
This Clqed f + Ti discipline is Kt = 0.189,
Tlll-141℃ and lζ. Measurement results of the reversal current at the 10th reversal during poling of this film (second
A sharp peak similar to the one shown in the figure was obtained.

ΔEc =66.7KV/cIll、pr−7,4μC
/dである。△ECが小さく、prが大きくなっており
、ポーリングによって効果的に分極されていることを示
している。このフィルムの熱安定性は、第1図の記号口
で示す通りである。結合定数(Kt )は融点(Tm 
)付近までほとんど減少せず、安定であることが判る。
ΔEc = 66.7KV/cIll, pr-7, 4μC
/d. ΔEC is small and pr is large, indicating that polarization is effectively achieved by polling. The thermal stability of this film is as indicated by the symbol in FIG. The binding constant (Kt) is the melting point (Tm
) It can be seen that it is stable, with almost no decrease until around .

・実施例4 (フッ化ビニリデン組成87モル%、未延伸。・Example 4 (Vinylidene fluoride composition: 87 mol%, unstretched.

溶融結晶化フィルム) フッ化ビニリデン組成87モル%のフッ化ごニリデンー
テトラフルオロエチレン共重合体のジメチルホルムアミ
ド溶液をガラス板上に流況し、常温減圧下で溶媒を気化
させた。このフィルムの融点はTm−120℃であった
。これをガラス板からはがさずに180℃で1時間保っ
た後、徐冷(2℃/分)した。このフィルムの両面にア
ルミニウムをに1着して??2極として用いポーリング
を行なった(Tp−100℃、Ep −92’l KV
/am。
Melt Crystallized Film) A dimethylformamide solution of a vinylidene fluoride-tetrafluoroethylene copolymer having a vinylidene fluoride composition of 87 mol % was flowed onto a glass plate, and the solvent was vaporized at room temperature and under reduced pressure. The melting point of this film was Tm-120°C. This was kept at 180° C. for 1 hour without being removed from the glass plate, and then slowly cooled (2° C./min). Can you put aluminum on both sides of this film? ? Poling was performed using it as two poles (Tp -100°C, Ep -92'l KV
/am.

【p=3Ω分)。[p=3Ω min.]

こうして得られた圧電膜は、Kt =0.109、Tm
=136℃であった。このフィルムの熱安定性は第1図
の記号で示す通りである。
The piezoelectric film thus obtained had Kt = 0.109, Tm
=136°C. The thermal stability of this film is as indicated by the symbols in FIG.

・比較例1 (フッ化ビニリデン組成72モル%、延伸、Tm以下で
熱処理をしたフィルム) フッ化ビニリデン組成72モル%のフッ化ビニリデンー
テトラフルオOエチレン共重合体をホットプレスで’N
 I11/! L/た後、65℃で約4倍に延伸した。
・Comparative Example 1 (Film with vinylidene fluoride composition of 72 mol%, stretched and heat-treated at below Tm) A vinylidene fluoride-tetrafluoro-ethylene copolymer with a vinylidene fluoride composition of 72 mol% was hot pressed.
I11/! After stretching, the film was stretched approximately 4 times at 65°C.

このフr)レムの融点は丁m=141℃であった。これ
を金属板ではさんで、オーブン内で120℃r−1時丙
熱処理を行なった後、徐冷(2T 、7分)りた。この
フィルムの両面にアルミニウムを7懐石し、電(夕とし
て用い、ポーリングを1テな−>  lご  (−l 
  p  =  1  00  ℃ 、  Elll 
  =532KV/cm。
The melting point of this frame was 141°C. This was sandwiched between metal plates and heat treated in an oven at 120°C for 1 hour, followed by slow cooling (2T, 7 minutes). Apply 7 coats of aluminum to both sides of this film, use it as a wire, and apply 1 coat of polling to it.
p = 100 °C, Ell
=532KV/cm.

El)=30分)。こうして19られた圧電膜は、Kt
=0.167、’I’1ll=141°Cであった。こ
のフィルムの熱安定性は第1図の゛記号・で示す通りで
ある。
El) = 30 minutes). The piezoelectric film thus prepared is Kt
= 0.167, 'I'1ll = 141°C. The thermal stability of this film is as indicated by the symbol .

第1図からK【は本発明の場合と異なり、温度の上昇と
ともに直線的に低下し、融点付近でゼロとなることが判
る。
It can be seen from FIG. 1 that, unlike in the case of the present invention, K decreases linearly as the temperature rises and becomes zero near the melting point.

・比較例2 (フッ化ビニリデン組成81モル%未延伸、融点(Tm
 )以下で熱処理したフィルム)実施例2と同様に製膜
したフィルムをガラス板からはがさずに115℃で1時
間熱処理した後、徐冷(2℃/分)した。このフィルム
の両面にアルミニウムを蒸着して電極として用い、実施
例2と同様に反転電流を測定しながらポーリングを行な
った(Tp−vi、Ep = 1125KV/am、周
波数0.0IH7,反転回数10回)。このフィルムは
K[−〇であった。このフィルムのポーリング時の反転
10回目の反転電流の測定結采番ま非常にブロードで明
確なピークは観察されなか−)だ。
・Comparative example 2 (vinylidene fluoride composition 81 mol% unstretched, melting point (Tm
) Film heat-treated below) A film produced in the same manner as in Example 2 was heat-treated at 115° C. for 1 hour without being removed from the glass plate, and then slowly cooled (2° C./min). Aluminum was vapor-deposited on both sides of this film and used as electrodes, and poling was performed while measuring the reversal current in the same manner as in Example 2 (Tp-vi, Ep = 1125 KV/am, frequency 0.0IH7, number of reversals 10 times). ). This film had a rating of K[-〇. When the reversal current was measured at the 10th reversal during poling of this film, no very broad and clear peak was observed.

残留分極はPr=2.5μC/artであった。The residual polarization was Pr=2.5 μC/art.

・比較例3 (フッ化ビニリJ゛ン組成81モル96、未延伸、溶8
(1、急冷−〕Cルム) 実施1シl12ど同様に4映したフ、fルムをガラス板
h1らはがさりl、:142℃で1時間熱処理した後、
0℃の氷水中に入れて急冷した。このフィルムの両面に
アルミニウムをr’4 rfLで?[tとして用い、実
施例2と同様に反転電流を測定しながらポーリングを1
1なった(Tp =空温、Ep=1049KVCm、周
波2h0. OI Hz 、反転回数10回)。
・Comparative Example 3 (Vinyl fluoride composition 81 mol 96, unstretched, melted 8
(1, Rapid cooling -] C column) In the same manner as in Example 1 and 12, the glass plate h1 was removed from the film, and after heat treatment at 142°C for 1 hour,
It was rapidly cooled by placing it in ice water at 0°C. Aluminum on both sides of this film with r'4 rfL? [Used as t, while measuring the reversal current as in Example 2,
1 (Tp = air temperature, Ep = 1049 KVCm, frequency 2h0.OI Hz, number of inversions 10 times).

このノイルムはKt =Oであった。このフィルムのポ
ーリングIk1の反転10回目の反転電流の測定結果は
、非常にブロードで明確なピークは観察されなかった。
This novelum was Kt =O. The measurement result of the reversal current at the 10th reversal of the poling Ik1 of this film was very broad and no clear peak was observed.

残留分極はPr=3.3μC/c+fであった。The residual polarization was Pr=3.3 μC/c+f.

・比較例4 (フッ化ビニリデン組成82モル%、延伸、熱処理なし
のフィルム) フッ化ビニリデン組成82モル%のフッ化ビニリデンー
テト・ラフルオロエチレン共重合体をホットプレスで製
膜した後、55°Cで約6倍に延伸した。このフィルム
の融点はTm=132℃であった。このフィルムの両面
にアルミニウムを、A fi lノ、電極として用いポ
ーリングを行なった(1’p−90℃、Ep = 71
4 KV/cm、 tl)= 1時間)。
・Comparative Example 4 (Vinylidene fluoride composition: 82 mol%, film without stretching or heat treatment) After forming a film of vinylidene fluoride-tetrafluoroethylene copolymer with a vinylidene fluoride composition of 82 mol% using a hot press, the film was heated at 55°C. It was stretched approximately 6 times. The melting point of this film was Tm=132°C. Poling was performed on both sides of this film using aluminum as electrodes (1'p-90°C, Ep = 71
4 KV/cm, tl) = 1 hour).

こうして得られた圧電膜は、Kt =0.150、Tn
+=136℃であった。このフィルムの熱安定性は第1
図の記号脛で示す通りである。K【はほとんど直線的に
低下して融点付近でゼロとなった。
The piezoelectric film thus obtained had Kt = 0.150, Tn
+=136°C. The thermal stability of this film is first
This is indicated by the symbol shin in the figure. K[ decreased almost linearly and reached zero near the melting point.

・比較例5 (フッ化ビニリデン組成99モル%、未延伸、溶融結晶
化フィルム) フッ化ビニリデン組成99モル%のフッ化ビニリデン−
テトラフルオロエチレン共重合体のジメチルホルムアミ
ド溶液を、ガラス板にFfij Mし、i;i濡、減圧
下で溶媒を気化さけた。このフィルムの融点はTm=1
45℃であった。これをガラス板からはがさずに180
℃に保った後、徐冷(2°C/分ンした。このフィルム
の両面にアルミニウムを蒸着して電極として用いポーリ
ングを11なった(丁p−100℃、Ep =833K
V/cm、tp=10分)。
・Comparative Example 5 (vinylidene fluoride composition 99 mol%, unstretched, melt crystallized film) Vinylidene fluoride composition 99 mol% vinylidene fluoride -
A dimethylformamide solution of the tetrafluoroethylene copolymer was applied to a glass plate using Ffij M, and the solvent was evaporated under reduced pressure. The melting point of this film is Tm=1
The temperature was 45°C. 180 minutes without removing this from the glass plate.
℃, and then slowly cooled (2℃/min). Aluminum was vapor-deposited on both sides of this film and used as an electrode, and the poling temperature was 11.
V/cm, tp=10 minutes).

こうして1!ノられた圧電膜はKt=0.064であり
、圧電性が小さかった。
Thus 1! The crushed piezoelectric film had a Kt of 0.064, and its piezoelectricity was small.

(ホ)発明の効果 実施例1〜3はいずれも一旦温度を融点(Tm)以上に
上げて融解させ、そこから徐冷して結晶化させた後にポ
ーリングしたもので、比較例1.4の延伸上程を加えて
融点(Tm)以下で熱処理した場合よりも結合定vi(
K[)の熱安定性がよく、融点(丁m)直下まぐ実用可
能なKtの値を維持する熱安定性のよい圧電膜が1qら
れることを示しでいる。
(e) Effects of the invention In Examples 1 to 3, the temperature was once raised to above the melting point (Tm) to melt, and then slowly cooled to crystallize, followed by poling. The bonding constant vi(
This shows that a piezoelectric film with good thermal stability, which maintains a practical Kt value just below the melting point (1q), can be produced.

比較例2は、木通仲ぐし、−p溶融することが必須であ
ることを示しており、比較例3は、更に溶融した後に徐
冷することが必須であることを示している。
Comparative Example 2 shows that it is essential to melt the Kidori Nakagushi -P, and Comparative Example 3 shows that it is essential to further melt and then slowly cool it.

なお、実施例2.3および比較例2.3に示した△[:
CとPrについでは、△ECが小さくPrが人さいど、
■1合定数(let)が大きいという相関があるという
知見をtlている。これらの11t1を比較してみても
、一旦温度を融点(Tm )以上に上げて融解させ、そ
こから徐冷して結晶化さけ、ポーリングするという本発
明の方法が有効であることが判る。
Note that Δ[: shown in Example 2.3 and Comparative Example 2.3
Regarding C and Pr, △EC is small and Pr is human.
■1 We have found that there is a correlation that the combination constant (let) is large. A comparison of these 11t1 shows that the method of the present invention, in which the temperature is once raised above the melting point (Tm) to melt it, and then slowly cooled to avoid crystallization and poling, is effective.

実施例4のフッ化ごニリデン1g成87モル96のフッ
化ビニリデン−テトラフルオロエチレン共重合体の熱安
定性は100℃付近に眉が見られ、温度を一旦融点(T
m)以上に上げて融解さけ、そこから徐冷して結晶化さ
けるという本発明の方法がこの組成比の共重合体におい
てb熱安定性向上に効果があることを示していると言え
る。
The thermal stability of the vinylidene fluoride-tetrafluoroethylene copolymer of Example 4 (1 g, 87 moles, 96
It can be said that this shows that the method of the present invention, in which the temperature is increased above m) to avoid melting and then slowly cooled to avoid crystallization, is effective in improving the thermal stability of a copolymer having this composition ratio.

比較例5のフッ化ビニリデン組成99Tニル9aのフッ
化ビニリデンーテトラフルオロエヂレン共手合体は、さ
らにフッ化ビニリデン組成が小さいので本発明による効
果が発現しないことを示している。
The vinylidene fluoride-tetrafluoroethylene conjugate of Comparative Example 5, which has a vinylidene fluoride composition of 99T-nyl 9a, has an even smaller vinylidene fluoride composition, indicating that the effects of the present invention are not exhibited.

なお、一般的にポーリングにより圧電性を付与された物
質は焦電性も右するが、本発明に係る高分子圧電体も焦
電性を右し、従来のものより熱安定性に17れでいるの
で高温下での使用に適し、劣化も少ない。
In general, materials imparted with piezoelectricity by poling also exhibit pyroelectricity, but the polymer piezoelectric material according to the present invention also exhibits pyroelectricity and is less thermally stable than conventional materials. This makes it suitable for use under high temperatures, and there is little deterioration.

このため、本発明に係る方法で製)Δされた高分子H電
体は圧電性、焦電性を利用した工業用の計測:)8の用
途に適している。
Therefore, the polymeric H electric material produced by the method according to the present invention is suitable for industrial measurement using piezoelectricity and pyroelectricity.

すjに、人さい圧電性を有する高分子圧電材料は結晶性
が高く加工性に劣るものが多いが、本発明に係る方法で
製造された高分子圧電体は、しなやかでIJII I 
t’tに富/υでいる。そこで、例えばチコーブや薄膜
のような可撓性を必要とする用途にも適している。
In addition, many polymer piezoelectric materials with human-like piezoelectricity have high crystallinity and poor workability, but the polymer piezoelectric material produced by the method according to the present invention is flexible and
I am rich/υ in t't. Therefore, it is also suitable for applications that require flexibility, such as Chicove and thin films.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は電気−礪械結合定数(Kt >の熱安定i′[
を示すグラフ、第2図は、ポーリング時の反転電流を示
りグラフである。
Figure 1 shows the thermal stability of the electrical-mechanical coupling constant (Kt >
FIG. 2 is a graph showing the reversal current during poling.

Claims (1)

【特許請求の範囲】[Claims]  フッ化ビニリデン組成が72〜87モル%のフッ化ビ
ニリデンとテトラフルオロエチレンの共重合体を融点(
Tm)以下の温度から徐冷して結晶化させ、ポーリング
することを特徴とする熱安定性に優れた高分子圧電体の
製造方法。
A copolymer of vinylidene fluoride and tetrafluoroethylene with a vinylidene fluoride composition of 72 to 87 mol% is heated to
A method for producing a polymer piezoelectric material with excellent thermal stability, which comprises slow cooling from a temperature below Tm) to crystallization and poling.
JP59223896A 1984-10-26 1984-10-26 Manufacture of macromolecular piezoelectric body, excellent in thermal stability Granted JPS61102791A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59223896A JPS61102791A (en) 1984-10-26 1984-10-26 Manufacture of macromolecular piezoelectric body, excellent in thermal stability

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59223896A JPS61102791A (en) 1984-10-26 1984-10-26 Manufacture of macromolecular piezoelectric body, excellent in thermal stability

Publications (2)

Publication Number Publication Date
JPS61102791A true JPS61102791A (en) 1986-05-21
JPH0376598B2 JPH0376598B2 (en) 1991-12-05

Family

ID=16805403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59223896A Granted JPS61102791A (en) 1984-10-26 1984-10-26 Manufacture of macromolecular piezoelectric body, excellent in thermal stability

Country Status (1)

Country Link
JP (1) JPS61102791A (en)

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JPWO2015053344A1 (en) * 2013-10-08 2017-03-09 ダイキン工業株式会社 Piezoelectric film
JPWO2019009374A1 (en) * 2017-07-07 2020-01-09 ダイキン工業株式会社 Vibration sensor and piezoelectric element
JP2020065042A (en) * 2018-10-16 2020-04-23 ダイキン工業株式会社 Piezoelectric film

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011181748A (en) * 2010-03-02 2011-09-15 Daikin Industries Ltd Method of manufacturing polarized resin film
JPWO2015053344A1 (en) * 2013-10-08 2017-03-09 ダイキン工業株式会社 Piezoelectric film
JPWO2019009374A1 (en) * 2017-07-07 2020-01-09 ダイキン工業株式会社 Vibration sensor and piezoelectric element
CN110832653A (en) * 2017-07-07 2020-02-21 大金工业株式会社 Vibration Sensors and Piezoelectric Components
JP2020065042A (en) * 2018-10-16 2020-04-23 ダイキン工業株式会社 Piezoelectric film
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US12414475B2 (en) 2018-10-16 2025-09-09 Daikin Industries, Ltd. Piezoelectric film having a vinylidenefluoride/tetrafluoroethylene copolymer film

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