JPS61108148A - 集積回路製造時の中間体の動的テスト装置 - Google Patents

集積回路製造時の中間体の動的テスト装置

Info

Publication number: JPS61108148A
Authority: JP; Japan
Prior art keywords: test; laser; test chip; chip; dynamic
Prior art date: 1984-11-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP60177789A

Other languages

English (en)

Japanese (ja)

Inventor

ヨハネス・ジエオルグ・ベハ

ラツセル・ワーレン・ドレイフアス

ゲイリー・ウエイン・ルブロフ

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee

International Business Machines Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-11-01

Filing date

1985-08-14

Publication date

1986-05-26

1985-08-14 Application filed by International Business Machines Corp filed Critical International Business Machines Corp

1986-05-26 Publication of JPS61108148A publication Critical patent/JPS61108148A/ja

Status Pending legal-status Critical Current

Links

238000004519 manufacturing process Methods 0.000 title claims description 7
238000012360 testing method Methods 0.000 claims description 64
238000007689 inspection Methods 0.000 claims 1
238000001514 detection method Methods 0.000 description 14
238000005516 engineering process Methods 0.000 description 12
238000000034 method Methods 0.000 description 12
239000000523 sample Substances 0.000 description 8
238000010894 electron beam technology Methods 0.000 description 7
230000005855 radiation Effects 0.000 description 7
230000003287 optical effect Effects 0.000 description 6
239000004065 semiconductor Substances 0.000 description 6
239000002131 composite material Substances 0.000 description 5
239000000543 intermediate Substances 0.000 description 5
239000013078 crystal Substances 0.000 description 4
238000010586 diagram Methods 0.000 description 4
238000012545 processing Methods 0.000 description 4
230000035945 sensitivity Effects 0.000 description 4
238000004458 analytical method Methods 0.000 description 3
230000001066 destructive effect Effects 0.000 description 3
238000009826 distribution Methods 0.000 description 3
230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 3
239000000463 material Substances 0.000 description 3
238000005259 measurement Methods 0.000 description 3
230000007246 mechanism Effects 0.000 description 3
238000012986 modification Methods 0.000 description 3
230000004048 modification Effects 0.000 description 3
229910001220 stainless steel Inorganic materials 0.000 description 3
239000010935 stainless steel Substances 0.000 description 3
235000012431 wafers Nutrition 0.000 description 3
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
229910052786 argon Inorganic materials 0.000 description 2
230000008901 benefit Effects 0.000 description 2
230000008859 change Effects 0.000 description 2
150000001875 compounds Chemical class 0.000 description 2
230000007613 environmental effect Effects 0.000 description 2
230000005284 excitation Effects 0.000 description 2
230000001939 inductive effect Effects 0.000 description 2
238000012544 monitoring process Methods 0.000 description 2
238000001228 spectrum Methods 0.000 description 2
238000010897 surface acoustic wave method Methods 0.000 description 2
230000002123 temporal effect Effects 0.000 description 2
230000001052 transient effect Effects 0.000 description 2
238000001069 Raman spectroscopy Methods 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
238000009825 accumulation Methods 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
239000012298 atmosphere Substances 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
239000002800 charge carrier Substances 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
230000001427 coherent effect Effects 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
239000002178 crystalline material Substances 0.000 description 1
230000007547 defect Effects 0.000 description 1
230000003111 delayed effect Effects 0.000 description 1
229910003460 diamond Inorganic materials 0.000 description 1
239000010432 diamond Substances 0.000 description 1
230000005684 electric field Effects 0.000 description 1
230000004907 flux Effects 0.000 description 1
229910002804 graphite Inorganic materials 0.000 description 1
239000010439 graphite Substances 0.000 description 1
238000000691 measurement method Methods 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
238000001465 metallisation Methods 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
238000002161 passivation Methods 0.000 description 1
238000001259 photo etching Methods 0.000 description 1
229920000728 polyester Polymers 0.000 description 1
239000010453 quartz Substances 0.000 description 1
230000004044 response Effects 0.000 description 1
229910052594 sapphire Inorganic materials 0.000 description 1
239000010980 sapphire Substances 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
238000004088 simulation Methods 0.000 description 1
239000000758 substrate Substances 0.000 description 1
238000010998 test method Methods 0.000 description 1
239000010409 thin film Substances 0.000 description 1
238000012549 training Methods 0.000 description 1
230000007704 transition Effects 0.000 description 1
238000002834 transmittance Methods 0.000 description 1

Classifications

- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Health & Medical Sciences (AREA)
Computer Vision & Pattern Recognition (AREA)
Electromagnetism (AREA)
Toxicology (AREA)
General Engineering & Computer Science (AREA)
General Physics & Mathematics (AREA)
Tests Of Electronic Circuits (AREA)
Testing Or Measuring Of Semiconductors Or The Like (AREA)

JP60177789A 1984-11-01 1985-08-14 集積回路製造時の中間体の動的テスト装置 Pending JPS61108148A (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US667506		1984-11-01
US06/667,506 US4706018A (en)	1984-11-01	1984-11-01	Noncontact dynamic tester for integrated circuits

Publications (1)

Publication Number	Publication Date
JPS61108148A true JPS61108148A (ja)	1986-05-26

Family

ID=24678500

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP60177789A Pending JPS61108148A (ja)	1984-11-01	1985-08-14	集積回路製造時の中間体の動的テスト装置

Country Status (5)

Country	Link
US (1)	US4706018A (fr)
EP (1)	EP0180780B1 (fr)
JP (1)	JPS61108148A (fr)
CA (1)	CA1220559A (fr)
DE (1)	DE3573320D1 (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO1987007028A2 (fr) *	1986-05-16	1987-11-19	Bell Communications Research, Inc.	Sonde laser a haute vitesse
EP0264481B1 (fr) *	1986-10-23	1992-05-13	International Business Machines Corporation	Procédé de test dans le vide pour substrats de circuits intégrés employant un laser
US4902963A (en) *	1988-01-28	1990-02-20	Brust Hans D	Method and arrangement for recording periodic signals with a laser probe
EP0404970A1 (fr) *	1989-06-26	1991-01-02	International Business Machines Corporation	Procédé et dispositif pour le test sans contact d'activité électronique d'un circuit intégré à tester après sa passivation
US6525555B1 (en) *	1993-11-16	2003-02-25	Formfactor, Inc.	Wafer-level burn-in and test
JP2718370B2 (ja) *	1994-07-29	1998-02-25	日本電気株式会社	配線ショート箇所検出方法および配線ショート箇所検出装置
US6472889B1 (en)	2000-06-15	2002-10-29	University Of Connecticut	Apparatus and method for producing an ion channel microprobe
US6891363B2 (en) *	2002-09-03	2005-05-10	Credence Systems Corporation	Apparatus and method for detecting photon emissions from transistors
US6943572B2 (en) *	2002-09-03	2005-09-13	Credence Systems Corporation	Apparatus and method for detecting photon emissions from transistors
KR100613169B1 (ko) *	2004-10-12	2006-08-17	삼성전자주식회사	무접촉 반도체 소자 테스트 장치 및 테스트 방법
US7202689B2 (en) *	2005-04-15	2007-04-10	International Business Machines Corporation	Sensor differentiated fault isolation
US7888955B2 (en) *	2007-09-25	2011-02-15	Formfactor, Inc.	Method and apparatus for testing devices using serially controlled resources
US7977959B2 (en) *	2007-09-27	2011-07-12	Formfactor, Inc.	Method and apparatus for testing devices using serially controlled intelligent switches
FR2923021B1 (fr)	2007-10-26	2010-02-19	Eads Europ Aeronautic Defence	Procede de determination de la sensibilite des composants electroniques vis-a-vis des particules.
US7623982B2 (en) *	2007-11-05	2009-11-24	Semicaps Pte Ltd	Method of testing an electronic circuit and apparatus thereof
US20090164931A1 (en) *	2007-12-19	2009-06-25	Formfactor, Inc.	Method and Apparatus for Managing Test Result Data Generated by a Semiconductor Test System
US20090224793A1 (en) *	2008-03-07	2009-09-10	Formfactor, Inc.	Method And Apparatus For Designing A Custom Test System
US8122309B2 (en) *	2008-03-11	2012-02-21	Formfactor, Inc.	Method and apparatus for processing failures during semiconductor device testing
US8095841B2 (en) *	2008-08-19	2012-01-10	Formfactor, Inc.	Method and apparatus for testing semiconductor devices with autonomous expected value generation
US7944225B2 (en)	2008-09-26	2011-05-17	Formfactor, Inc.	Method and apparatus for providing a tester integrated circuit for testing a semiconductor device under test
FR2992067A1 (fr) *	2012-06-13	2013-12-20	St Microelectronics Grenoble 2	Procede et dispositif d'ajustement de la tension de polarisation d'une photodiode spad
US10139358B2 (en) *	2016-01-11	2018-11-27	International Business Machines Corporation	Method for characterization of a layered structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS522573A (en) *	1975-06-24	1977-01-10	Toshiba Corp	Surface potential measuring device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3129353A (en) *	1960-05-17	1964-04-14	Mrs Jennings	Multiple radiation source microscope
US3370168A (en) *	1964-01-14	1968-02-20	Hitachi Ltd	Anode aperture plate for a television camera tube in an electron microscope comprising a stainless steel foil
US4266138A (en) *	1978-07-11	1981-05-05	Cornell Research Foundation, Inc.	Diamond targets for producing high intensity soft x-rays and a method of exposing x-ray resists
US4332833A (en) *	1980-02-29	1982-06-01	Bell Telephone Laboratories, Incorporated	Method for optical monitoring in materials fabrication
JPS56124003A (en) *	1980-03-06	1981-09-29	Toshiba Corp	Measuring device for pattern
US4380864A (en) *	1981-07-27	1983-04-26	The United States Of America As Represented By The Secretary Of The Air Force	Method for providing in-situ non-destructive monitoring of semiconductors during laser annealing process
US4417948A (en) *	1982-07-09	1983-11-29	International Business Machines Corporation	Self developing, photoetching of polyesters by far UV radiation
JPS59141238A (ja) *	1983-02-01	1984-08-13	Hitachi Ltd	キヤリア寿命測定装置
JPH0634027B2 (ja) *	1983-05-25	1994-05-02	パウルイ	集積回路又はプリント回路のような電気的装置の検査方法

1984
- 1984-11-01 US US06/667,506 patent/US4706018A/en not_active Expired - Fee Related
1985
- 1985-05-23 CA CA000482173A patent/CA1220559A/fr not_active Expired
- 1985-08-14 JP JP60177789A patent/JPS61108148A/ja active Pending
- 1985-10-04 EP EP85112610A patent/EP0180780B1/fr not_active Expired
- 1985-10-04 DE DE8585112610T patent/DE3573320D1/de not_active Expired

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS522573A (en) *	1975-06-24	1977-01-10	Toshiba Corp	Surface potential measuring device

Also Published As

Publication number	Publication date
EP0180780A1 (fr)	1986-05-14
US4706018A (en)	1987-11-10
EP0180780B1 (fr)	1989-09-27
DE3573320D1 (en)	1989-11-02
CA1220559A (fr)	1987-04-14

Publication	Publication Date	Title
JPS61108148A (ja)	1986-05-26	集積回路製造時の中間体の動的テスト装置
US4703260A (en)	1987-10-27	Full chip integrated circuit tester
US5017863A (en)	1991-05-21	Electro-emissive laser stimulated test
US4816753A (en)	1989-03-28	Method for reliability testing of integrated circuits
US3939415A (en)	1976-02-17	Method of and device for measuring life time of carriers of semiconductor
US8941824B2 (en)	2015-01-27	Semiconductor inspection method and semiconductor inspection apparatus
Pease et al.	2002	Comparison of SETs in bipolar linear circuits generated with an ion microbeam, laser light, and circuit simulation
JP2005517188A (ja)	2005-06-09	集積回路の動的診断テスティング装置および方法
US4786865A (en)	1988-11-22	Method and apparatus for testing integrated circuit susceptibility to cosmic rays
US7019311B1 (en)	2006-03-28	Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices
US4644264A (en)	1987-02-17	Photon assisted tunneling testing of passivated integrated circuits
US5111137A (en)	1992-05-05	Method and apparatus for the detection of leakage current
US4845425A (en)	1989-07-04	Full chip integrated circuit tester
US4786864A (en)	1988-11-22	Photon assisted tunneling testing of passivated integrated circuits
US5563508A (en)	1996-10-08	Non-contact resistivity measurement apparatus and method using femtosecond laser pulses to create an electron flow
JPH04305954A (ja)	1992-10-28	製造プロセスを試験する装置と方法
US5030909A (en)	1991-07-09	Method and system for contactless testing of electronic activity in an integrated circuit chip-to-test after passivation thereof
US7623982B2 (en)	2009-11-24	Method of testing an electronic circuit and apparatus thereof
US4902963A (en)	1990-02-20	Method and arrangement for recording periodic signals with a laser probe
JPH0573579U (ja)	1993-10-08	集積回路製造時の中間体の動的テスト装置
Nikiforov et al.	1996	" RADON-5E" portable pulsed laser simulator: description, qualification technique and results, dosimetry procedure
Fouillat et al.	2004	Investigation of single-event transients in fast integrated circuits with a pulsed laser
Seitz et al.	1986	Energy and time-resolved photoemission in a promising new approach for contactless integrated-circuit testing
JPS59150443A (ja)	1984-08-28	半導体のキヤリアライフタイム計測装置
Hung et al.	2024	Utilizing the Short-Pulsed Laser on Integrated Circuits to Induce Single-Event Transient Phenomena