JPS61111009A - Semiconductor device - Google Patents

Abstract

PURPOSE:To attain miniaturization and stable operation by coupling parallel capacitive elements of an impedance matching circuit connected respectively to plural semiconductor elements via a resistor to absorb a reflected signal. CONSTITUTION:Two lumped constant type impedance matching circuits of 2-stage filter connected in parallel are provided to each gate of common source microwave use FETs 21a, 21b. The elements constituting the matching circuits are all matched to the input/output impedance of the FETs 21a, 21b. It is desired for the two FETs of the constitution above to have the entirely same characteristic, but should the characteristic be unbalanced, each FET is isolated completely then they are not affected mutually at all. Thus, destruction due to current concentration upon one FET only is less and the stable semiconductor device with high performance and high output is attained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a high frequency semiconductor device equipped with an impedance matching circuit, particularly a lumped element type high output semiconductor device trap.

[Conventional technology]

In high-frequency, high-power semiconductor devices such as field-effect transistors (hereinafter referred to as FETs), the impedance of the semiconductor element is extremely low. Intervention of unnecessary elements such as capacitance and inductance
In order to avoid this, it is necessary to provide an impedance matching circuit as close as possible to the semiconductor element itself.

One of the things that meets the above-mentioned demands is the conventional "Microwave Integrated Circuit" by Yoshihiro Konishi, published by Sanpo Publishing Co., Ltd., p. 79.
~88. 1973 K111 product was developed. This conventional high-frequency, high-output transistor is configured as a so-called transistor with an internal matching circuit, in which an impedance matching circuit is placed inside the container of the semiconductor device.

As such an internal matching circuit, a multi-stage filter configuration using a trapezoidal constant a element is often adopted in order to realize miniaturization and widening of the band. The inductance is composed of bonding wires, and the multiple parallel capacitive elements in multiple stages are combined into a single piece! l
The t-body substrate is formed on the upper plate.

In order to further increase the output, the matching circuit and the high output transistor connected in parallel are integrated in the same container and operated in parallel.

[Problem that the invention seeks to solve]

Conventional semiconductor devices such as those described above operate in simple parallel connection, so it is necessary to maintain balance to the extent that the DC and AC characteristics of all transistors are almost the same. If there is an unbalanced transistor element, the There was a problem in that current concentrated on one side of the unbalanced transistors, leading to destruction.

The reason is that the high frequency signal input to the transistor Ill is reflected and input to the other transistors.

If a certain transistor is unbalanced, current will concentrate on any one transistor element, resulting in destruction. If the matching is perfect, there will be no reflection, but it is difficult to achieve perfect matching.

The present invention has been made to solve these problems, and provides a compact high-frequency output semiconductor device that absorbs the reflected high-frequency signals and reduces their influence on each other's transistors, and that can operate stably. The purpose is to obtain.

[Failure to solve the problem]

In the semiconductor device according to the present invention, parallel capacitance elements of an impedance matching circuit connected to each of 41a semiconductor confections are coupled via a resistor for absorbing reflected signals.

[Effect]

In this invention, since a resistor is inserted between each matching circuit of each semiconductor element, even if each semiconductor element is unbalanced, there is mutual isolation between the semiconductor elements, so there is no influence on each other. Therefore, the concentration of current in only one semiconductor element is reduced.

〔Example〕

FIG. 1 is a plan view schematically showing an embodiment of the present invention, and FIG. 2 is an equivalent circuit diagram of FIG. 1.

#! In Figure 1, two high-power F
ET2 is flip-chip bonded to the grounded conductor block 1 which also serves as a heat sink, and the gate electrode is connected to the dielectric base 4+ through the gold ribbon 3★! It is connected to the parallel capacitive element 4 provided on the capacitive element 13 .

The parallel capacitive element 4 and the parallel capacitive element 6' located at the input @ are each connected by two thin conductor wires 5.

Further, the parallel capacitive element 6 and the metal film pattern 9 formed on the alumina substrate 1° are connected by a thin conductor wire 8. The parallel capacitive elements 6 on the input side are connected by a resistive film 7 made of, for example, tantalum bovine fluoride. The drain electrode is connected to the metal film pattern 11 on the alumina substrate 12 via the silver ribbon 3. This will be explained using the equivalent circuit in Figure 2. In Figure 2, FET 21 for source-grounded microwave
The gate electrodes of each of a and 21b are connected to the inductor 7 in series 22 at 22 be 24 as 2'b
, 27a, 27b and the parallel capacitive element 23a.

Two lumped constant impedance matching circuits of two-stage filters consisting of 23 b, 2 S a, and 25 b are connected in parallel, and between the parallel capacitive elements 2 S a and 25 b of each circuit. A resistor 26 corresponding to the resistive film 7 in FIG. 1 is provided. 28a.

28b is an inductance, and 29 is a distributed constant line.

And what are the elements that make up the matching circuit?

All of the above FET21. The input and output impedances of a and 21b should be determined to match.

It is desirable for two FETs with this type of configuration to have exactly the same characteristics, but even if they are unbalanced, each FET is isolated from each other, so it will not affect each other. There isn't.

Therefore, damage caused by concentration of input current to only one FET is reduced, and a stable, high-performance, high-output semiconductor device can be obtained.

In this example, an FET has been described, but the present invention is not limited to this, and a bipolar transistor or a diode may be used instead of a specific type. Furthermore, the resistive film 1 generally only needs to be a resistor.

〔Effect of the invention〕

As explained above, in this invention, a multi-eNvA high-frequency semiconductor baby and each of the multi-stage constant type metal circuits directly connected to each of the plurality of high-frequency semiconductor babies are integrated in the same container. Moreover, since the parallel capacitance elements on the input side of each of the multistage lumped constant matching circuits are connected via a resistor, even if there is unbalanced characteristics in each semiconductor element, they do not affect each other. Moreover, there is an effect that a high-performance, high-frequency, high-output semiconductor device that is small in size, operates stably, and does not break down can be obtained.

[Brief explanation of drawings]

Figure 1 is a plan view showing a schematic configuration of an embodiment of the present invention;
FIG. 2 is an equivalent circuit diagram of FIG. 1. In the figure, 1 is a conductor 7I:I, and 2 is a FET. 3 is a gold ribbon, 4 is a parallel capacitive element, and 5 is a conductor 11f[1
m, 6 is a parallel capacitive element, 7 is a resistive film, 8 is a thin conductor wire, 9
10 is a metal film pattern, 10 is an alumina substrate, 11 is a metal film pattern, 12 is an alumina substrate, and 13 is a dielectric substrate. , ′*・4! ″l″F1″j−73°!M−
1f, :, °1""11 shown. Agent Masuo Oiwa (2 others) Figure 1 13: Proprietary board Figure 2 Procedural amendment (voluntary) Indication of case Title of invention of patent application No. 59-234757 Relationship to the case of person making amendments to semiconductor devices Patent Applicant Address 2-2-3 Marunouchi, Chiyoda-ku, Tokyo Name (601) Mitsubishi Electric Corporation Representative Jinhachibe Katayama

Claims (1)

[Claims] A plurality of high-frequency semiconductor elements and each multi-stage lumped constant type matching circuit directly connected to each of the plurality of high-frequency semiconductor elements are integrated in the same container, and each of the multi-stage lumped constant type matching circuits is integrated in the same container. A high frequency, high output semiconductor device characterized in that parallel capacitive elements on the input side of a matching circuit are connected via a resistor.