JPS6111403B2 - - Google Patents
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- Publication number
- JPS6111403B2 JPS6111403B2 JP53159273A JP15927378A JPS6111403B2 JP S6111403 B2 JPS6111403 B2 JP S6111403B2 JP 53159273 A JP53159273 A JP 53159273A JP 15927378 A JP15927378 A JP 15927378A JP S6111403 B2 JPS6111403 B2 JP S6111403B2
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- Prior art date
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- 239000000203 mixture Substances 0.000 claims description 24
- 239000000843 powder Substances 0.000 claims description 22
- 229910052573 porcelain Inorganic materials 0.000 claims description 20
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 15
- 229910002113 barium titanate Inorganic materials 0.000 claims description 15
- 239000011230 binding agent Substances 0.000 claims description 14
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 5
- FPHIOHCCQGUGKU-UHFFFAOYSA-L difluorolead Chemical compound F[Pb]F FPHIOHCCQGUGKU-UHFFFAOYSA-L 0.000 claims description 3
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 17
- 239000011521 glass Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 239000000654 additive Substances 0.000 description 8
- 238000010304 firing Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- XMFOQHDPRMAJNU-UHFFFAOYSA-N lead(II,IV) oxide Inorganic materials O1[Pb]O[Pb]11O[Pb]O1 XMFOQHDPRMAJNU-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 239000010665 pine oil Substances 0.000 description 1
- -1 resistors Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
本発明は低損失誘電体組成物に関する。詳しく
は、本発明は800〜1000℃程度の温度で焼成で
き、しかも誘電体損失の小さいコンデンサーが得
られるごとき誘電体組成物に関する。
コンデンサーは電気回路において最も多く使用
される電気部品の1つで、その材料の種類および
組成の割合によつて電気的特性が種々に変化す
る。従つて、一般にその用途に応じて材料の種類
および組成の割合が定められている。コンデンサ
ーの電気的特性には電気容量、誘電体損失、絶縁
抵抗などがあるが、磁器誘電体においては絶縁抵
抗は一般に大きいため余り問題にはならず、電気
容量および誘電体損失が問題になる。特に誘電体
損失は高周波領域で使用されるコンデンサーにお
いては大きな要因で、誘電体損失が大きいとコン
デンサー自体が発熱し、一定限度を越えると電気
容量に大きな変化を生じ、回路が設計通りに機能
しなくなる。
近年、回路の小型化に伴つて部品も小型のもの
が要求されるようになり、最も進歩した形として
混成集積回路(以下HICと称す)が案出されるに
至つた。HICは導電体、抵抗体およびコンデンサ
ーをアルミナなどの磁器基板上に所定の形状で形
成したもので、必要により半導体素子およびIC
を塔截する。一般に、導電体、抵抗体またはコン
デンサー用の材料を粉末とし、これを適当なビヒ
クルに分散混練したペーストをスクリーン印刷等
によつて塗布し、後800〜1000℃程度の温度で焼
成して回路を形成する。このような用途に用いら
れるコンデンサー用の材料としては、従来、
BaTiO3,TiO2等の誘電体磁器粉末をガラス粉末
と混合したもの、あるいはガラス粉末のみのもの
などが提案されている。しかしながら、
BaTiO3,TiO2などの誘電体磁器粉末を用いたも
のは誘電率は高いが誘電体損失が大きく、ガラス
粉末のみのものは誘電体損失は小さいが誘電率が
低過ぎ、いづれも回路設計上の困難があつた。
HICにおいては、この欠点を補うため、特殊の組
成で製造した小型の磁器コンデンサーをハンダ等
で接続しているが、このようなコンデンサーはそ
の要部が通常1300〜1400℃で焼結された磁器誘電
体であり、また、小型のものの製造工程が複雑で
あるなどの理由で高価である。かくして、アルミ
ナなどの磁器基体にペースト状で塗布後、800〜
1000℃で焼成できるコンデンサー材料の開発が強
く要望されている。
本発明の目的は、このような要望に答えて、
800〜1000℃程度の温度において焼成することが
でき、空胴のない緻密なコンデンサー層が得られ
しかも誘電体損失を低い値に維持したまま誘電率
の調整を可能にした新規な低損失誘電体組成物を
提供することにある。
本願発明者は、この目的を達成するため鋭意研
究の結果、Ba4Ti13O3090重量%以上、BaO10重量
%以下及びTiO25重量%以下から成るチタン酸バ
リウム磁器粉末100重量部とガラス質結合剤4〜
20重量部を混合し、650〜750℃の温度で焼成した
後冷却し粉砕した誘電体組成物と材料とするコン
デンサーは高周波領域において誘電体損失が従来
のものに比し極めて小さいことを発見し本発明に
到達した。
チタン酸バリウム磁器粉末はBaOまたはBaCO3
とTiO2と高温反応によつて製造され、粉末状で
得るにはBaCO3の使用が好ましい。主成分の
Ba4Ti13O30はBaOとTiO2のモル比が4:13の化
合物で斜方晶系の結晶構造を有する。Ba4Ti13O30
の含有率はできるだけ高い方が望ましいが、組成
における若干の誤差または反応の未完了による少
量のBaOおよびTiO2の残留は差支えなく、
Ba4Ti13O3090重量%以上、BaO10重量%以下で
TiO25重量%以下が好ましい範囲である。TiO2が
5重量%以上含有されるとコンデンサーにTiO2
の影響が現はれるので好ましくない。またBaOが
10重量%以上含有されるとBaOの影響が顕著にな
り使用に耐えなくなる。
該チタン酸バリウム磁器粉末を結合して誘電体
層を形成し同時にアルミナ基板等に固着せしめる
ためにはガラス質結合剤の添加が必要である。添
加するガラス質結合剤の量はチタン酸バリウム磁
器粉末の粒子間隙を充分に満す程度が最も好まし
く、該チタン酸バリウム磁器粉末100重量部に対
し4〜20重量部が適当である。4重量%以下では
誘電体層内に微小な空洞を生じピンホールの原因
となつて電気的特性を劣化させる、また20重量%
以上では誘電体層外へ流出して所定の形状を保持
できなくなる。そしてガラス質結合剤の添加の割
合はチタン酸バリウム磁器粉末の粒子の大きさお
よび使用するガラス質結合剤の種類によつて上記
の範囲内で調節される。チタン酸バリウム磁器粉
末とガラス質結合剤とを上記の割合で充分に混合
した後650〜750℃の温度で焼成してガラスを溶融
または半溶融し、溶融または半溶融したガラス中
にチタン酸バリウム磁器粉末を均一に分散せし
め、後冷却水中で急冷し、粉砕して誘電体組成物
を製造する。上記の焼成急冷の熱処理によつてチ
タン酸バリウム磁器粉末とガラス質結合剤とがよ
くなじみピンホールのない緻密な誘電体層が得ら
れる。しかしながらこのような処理を行はないと
きは誘電体層にピンホールの生ずる頻度が高くな
るので好ましくない。
本発明に使用するガラス質結合剤は融点が約
500〜700℃でチタン酸バリウム磁器粉末と濡れが
良好で、さらにHICに用いる基板の線膨張係数に
適合したものが望ましい。このようなガラスは各
種の成分の組合せで任意に製造し得るものである
が、本願発明者はPbO−B2O3−PbF2−SiO2の4
元系のガラスについて検討しPbO50〜80重量%、
B2O310〜40重量%、PbF22〜15重量%、および
SiO25重量%以下を含み、これらの合計が98重量
%以上のガラスが適当であることを見出した。な
おSiO2を全く含まなくても使用上差支えない。
また、ガラス質結合剤は上記のものに限定される
ものではなく、融点、濡れ性および線膨張係数が
条件を満すものであればよい。
このように構成された誘電体組成物は一応所期
の目的である誘電体損失のコンデンサーを実現で
きるが、誘電体層がやゝ脆くまた誘電率も限定さ
れる。このため硬度を増大し、誘電率を調整し得
るように、前記組成物100重量部に対してSiO2,
Al2O3,ZrO2,MgO,ZnO,BaOの1種または2
種以上を0.2〜10重量部、またはIn2O3,Bi2O3,
Sb2O3の1種または2種以上を0.2〜5重量部、ま
たはSiO2,Al2O3,ZrO2,MgO,ZnO,BaOの1
種または2種以上を0.1〜10重量部とIn2O3,
Bi2O3,Sb2O3の1種または2種以上を0.1〜5重
量部とを合計で0.2〜10重量部添加する。この添
加剤の添加量が少な過ぎると当然誘電体層の硬化
の程度が小さく、また多過ぎると添加剤自体の電
気気的特性が現出して好ましくない。添加剤の種
類および添加量は目的、用途によつて選択され
る。
次に本発明を実施例によつてより詳細に説明す
る。
実施例
まず、BaCO3とTiO2をモル比がBaO:TiO2=
1:3となるように秤量混合し、約1260℃で焼成
してチタン酸バリウム磁器粉末を製造した。この
チタン酸バリウム磁器粉末はX線回折の結果主成
分がBa4Ti13O30であり、他に少量のBaOを含有す
ることが確認された。
ガラス質結合剤はPb3O4 46.5重量%、H3BO3
44.5重量%及びPbF2 9重量%を充分混合し、
900℃で30分間溶融し、純水にて急冷後ボールミ
ルで湿式粉砕して得た。このガラスは融点が550
℃、軟化点が500℃、線膨張係数は20〜300℃の範
囲で98×10-7/℃であつた。チタン酸バリウム磁
器粉末91.8重量%に対しこのガラスを8.2重量%
混合し、700℃で30分間溶融した後純水中で急冷
し、ボールミルにて湿式粉砕し、乾燥後200メツ
シユの篩を通して篩下の分を誘電体組成物として
得、以下のペースト基材に供した。この誘電体組
成物88重量%を、12重量%のビヒクル(エチルセ
ルローズ8重量%含有のパインオイル溶液)と混
練しペーストを作製した。ビヒクル添加量はペー
ストの粘度を調整するため任意に変えることがで
きる。同様の方法で誘電体組成物84.8重量%と
SiO2,Al2O3,In2O3,ZrO2,Bi2O3及びBaOの各
1種ずつを3.2重量%とビヒクル12重量%と混練
したペーストを作製した。
これらのペーストを次のように焼成し、誘電体
特性を測定した。引出し線を有する直径12mmの円
形パターンで焼成したAg−Pd下部電極を有する
20mm×18mm×1mm厚の96%アルミナ基板の該下部
電極の中心に合わせて上記の各誘電体ペーストを
直径14mmのパターンでスクリーン印刷した。この
基板を120〜130℃で溶剤を蒸発せしめた後1サイ
クルが45分でピーク温度1000℃、ピーク保持時間
10分の温度プロフアイルを有するベルト式の焼成
炉を通し、誘電体層を焼成した。次に誘電体層上
に上部電極をAg−Pd導電ペーストにて下部電極
引出し線と反対側に引出し線を持つた直径12mmの
円形パターンを印刷し、ピーク温度850℃でピー
ク保持時間10分の温度温度プロフイルを有する焼
成炉で焼成し、電極を形成した。これらの試料に
ついて室温にて比誘電率εs及び誘電体損失角tan
δを測定した。第1表に各周波数における比誘
電率εs、第2表に各周波数における誘電体損失
角tan δの測定値を示す。
The present invention relates to low loss dielectric compositions. Specifically, the present invention relates to a dielectric composition that can be fired at a temperature of about 800 to 1000° C. and that can yield a capacitor with small dielectric loss. Capacitors are one of the most commonly used electrical components in electrical circuits, and their electrical characteristics vary depending on the type of material and composition ratio. Therefore, the types of materials and composition ratios are generally determined depending on the intended use. The electrical characteristics of a capacitor include capacitance, dielectric loss, insulation resistance, etc. In porcelain dielectrics, insulation resistance is generally large, so it does not matter much, but capacitance and dielectric loss become a problem. In particular, dielectric loss is a major factor in capacitors used in high frequency ranges.If the dielectric loss is large, the capacitor itself will generate heat, and if it exceeds a certain limit, the capacitance will change significantly, and the circuit will not function as designed. It disappears. In recent years, with the miniaturization of circuits, there has been a demand for smaller components, and the hybrid integrated circuit (hereinafter referred to as HIC) has been devised as the most advanced form. HIC is a device in which a conductor, a resistor, and a capacitor are formed in a predetermined shape on a ceramic substrate such as alumina.
to dig out. In general, materials for conductors, resistors, or capacitors are powdered, dispersed and kneaded in a suitable vehicle, and then applied as a paste by screen printing, etc., and then baked at a temperature of about 800 to 1000°C to form a circuit. Form. Traditionally, materials for capacitors used in such applications include:
A mixture of dielectric ceramic powder such as BaTiO 3 or TiO 2 with glass powder, or only glass powder has been proposed. however,
Products using dielectric ceramic powder such as BaTiO 3 and TiO 2 have a high dielectric constant but large dielectric loss, and those using only glass powder have a small dielectric loss but have a too low permittivity. There were many difficulties.
In HIC, to compensate for this drawback, small porcelain capacitors manufactured with a special composition are connected with solder, etc., but the main parts of such capacitors are usually made of porcelain sintered at 1,300 to 1,400 degrees Celsius. It is expensive because it is a dielectric material and the manufacturing process for small products is complicated. Thus, after being applied in paste form to a porcelain substrate such as alumina, the
There is a strong demand for the development of capacitor materials that can be fired at 1000℃. The purpose of the present invention is to respond to such demands,
A new low-loss dielectric that can be fired at temperatures of about 800 to 1000℃, yields a dense capacitor layer without cavities, and allows adjustment of the dielectric constant while maintaining a low dielectric loss. An object of the present invention is to provide a composition. In order to achieve this objective, the inventor of the present application, as a result of intensive research, found that 100 parts by weight of barium titanate porcelain powder consisting of 90% by weight or more of Ba 4 Ti 13 O 30 , 10% by weight or less of BaO, and 5% by weight or less of TiO 2 and glass. quality binder 4~
It was discovered that the dielectric composition was mixed with 20 parts by weight, fired at a temperature of 650 to 750°C, cooled and crushed, and that the dielectric loss of the capacitor used as the material was extremely small compared to conventional compositions in the high frequency range. We have arrived at the present invention. Barium titanate porcelain powder is BaO or BaCO3
It is produced by high temperature reaction with TiO 2 and the use of BaCO 3 is preferred to obtain it in powder form. of the main component
Ba 4 Ti 13 O 30 is a compound with a molar ratio of BaO and TiO 2 of 4:13 and has an orthorhombic crystal structure. Ba 4 Ti 13 O 30
It is desirable for the content of
Ba 4 Ti 13 O 30 90% by weight or more, BaO 10% by weight or less
A preferred range of TiO 2 is 5% by weight or less. If TiO 2 is contained at 5% by weight or more, TiO 2 will be added to the capacitor.
This is not desirable because the influence of Also BaO
If the content exceeds 10% by weight, the influence of BaO becomes significant and it becomes unusable. It is necessary to add a vitreous binder to bond the barium titanate porcelain powder to form a dielectric layer and at the same time to fix it to an alumina substrate or the like. The amount of the vitreous binder added is most preferably such that it sufficiently fills the interparticle gaps of the barium titanate porcelain powder, and is suitably 4 to 20 parts by weight per 100 parts by weight of the barium titanate porcelain powder. If it is less than 4% by weight, minute cavities will be created in the dielectric layer, causing pinholes and deteriorating the electrical characteristics;
If this is the case, the particles will flow out of the dielectric layer and the predetermined shape cannot be maintained. The addition ratio of the vitreous binder is adjusted within the above range depending on the particle size of the barium titanate porcelain powder and the type of vitreous binder used. After thoroughly mixing barium titanate porcelain powder and a glassy binder in the above ratio, firing at a temperature of 650 to 750°C to melt or semi-molten the glass, barium titanate is added to the molten or semi-molten glass. The porcelain powder is uniformly dispersed, rapidly cooled in post-cooling water, and pulverized to produce a dielectric composition. By the heat treatment of firing and rapid cooling described above, the barium titanate porcelain powder and the vitreous binder are well integrated and a dense dielectric layer without pinholes can be obtained. However, if such treatment is not performed, pinholes will occur more frequently in the dielectric layer, which is not preferable. The vitreous binder used in the present invention has a melting point of approximately
It is desirable that it has good wettability with barium titanate porcelain powder at 500 to 700°C and is compatible with the linear expansion coefficient of the substrate used for HIC. Although such glasses can be manufactured arbitrarily by combining various components, the inventor of the present application has developed a method using a four-layered glass of PbO-B 2 O 3 -PbF 2 -SiO 2 .
Considering original glass, PbO50 to 80% by weight,
B2O3 10-40 % by weight, PbF2 2-15% by weight, and
It has been found that a glass containing 5% by weight or less of SiO 2 and a total of 98% by weight or more is suitable. Note that there is no problem in use even if it does not contain SiO 2 at all.
Further, the vitreous binder is not limited to those mentioned above, and any vitreous binder may be used as long as it satisfies the conditions of melting point, wettability, and coefficient of linear expansion. Although the dielectric composition constructed in this manner can realize the intended purpose of a capacitor with a low dielectric loss, the dielectric layer is rather brittle and the dielectric constant is limited. Therefore, in order to increase the hardness and adjust the dielectric constant, SiO 2 ,
One or two of Al 2 O 3 , ZrO 2 , MgO, ZnO, BaO
0.2 to 10 parts by weight of seeds or more, or In 2 O 3 , Bi 2 O 3 ,
0.2 to 5 parts by weight of one or more of Sb 2 O 3 or 1 of SiO 2 , Al 2 O 3 , ZrO 2 , MgO, ZnO, BaO
0.1 to 10 parts by weight of a species or two or more species and In 2 O 3 ,
0.1 to 5 parts by weight of one or more of Bi 2 O 3 and Sb 2 O 3 are added in a total of 0.2 to 10 parts by weight. If the amount of this additive added is too small, the degree of hardening of the dielectric layer will naturally be small, and if it is too large, the electrical characteristics of the additive itself will appear, which is undesirable. The type and amount of additives to be added are selected depending on the purpose and use. Next, the present invention will be explained in more detail with reference to Examples. Example First, the molar ratio of BaCO 3 and TiO 2 is BaO:TiO 2 =
They were weighed and mixed at a ratio of 1:3 and fired at about 1260°C to produce barium titanate porcelain powder. As a result of X-ray diffraction, it was confirmed that the main component of this barium titanate porcelain powder was Ba 4 Ti 13 O 30 and a small amount of BaO. The vitreous binder is 46.5% by weight of Pb3O4 , H3BO3
Thoroughly mix 44.5% by weight and 9% by weight of PbF 2 ,
The product was melted at 900°C for 30 minutes, rapidly cooled with pure water, and then wet-pulverized in a ball mill. This glass has a melting point of 550
℃, the softening point was 500℃, and the linear expansion coefficient was 98×10 −7 /℃ in the range of 20 to 300℃. 8.2% by weight of this glass compared to 91.8% by weight of barium titanate porcelain powder
After mixing and melting at 700℃ for 30 minutes, it was rapidly cooled in pure water, wet-pulverized in a ball mill, dried, passed through a 200-mesh sieve, and the portion under the sieve was obtained as a dielectric composition, which was used as the paste base material below. provided. A paste was prepared by kneading 88% by weight of this dielectric composition with 12% by weight of a vehicle (pine oil solution containing 8% by weight of ethyl cellulose). The amount of vehicle added can be changed arbitrarily to adjust the viscosity of the paste. Dielectric composition 84.8% by weight in a similar manner
A paste was prepared by kneading 3.2% by weight of each of SiO 2 , Al 2 O 3 , In 2 O 3 , ZrO 2 , Bi 2 O 3 and BaO with 12% by weight of vehicle . These pastes were fired as follows, and their dielectric properties were measured. It has an Ag-Pd bottom electrode fired in a 12mm diameter circular pattern with lead wires.
Each of the above dielectric pastes was screen printed in a pattern with a diameter of 14 mm, aligned with the center of the lower electrode of a 20 mm x 18 mm x 1 mm thick 96% alumina substrate. After evaporating the solvent on this substrate at 120 to 130℃, one cycle takes 45 minutes, with a peak temperature of 1000℃ and a peak retention time.
The dielectric layer was fired through a belt firing furnace with a 10 minute temperature profile. Next, a circular pattern with a diameter of 12 mm was printed on the dielectric layer with an upper electrode using Ag-Pd conductive paste with a lead line on the opposite side from the lower electrode lead line, and the peak temperature was 850℃ and the peak holding time was 10 minutes. An electrode was formed by firing in a firing furnace having a temperature profile. For these samples, the dielectric constant ε s and dielectric loss angle tan at room temperature
δ was measured. Table 1 shows the measured values of the dielectric constant ε s at each frequency, and Table 2 shows the measured values of the dielectric loss angle tan δ at each frequency.
【表】【table】
【表】
測定器は1KHz乃至1MHzの区間には安藤電気製
広帯域誘電体損失測定器を用い、1MHz乃至10M
Hz間には目黒電波製Qメータを用いた。
第1表は添加剤の種類によつて比誘電率が調整
でき、且つ添加剤を加えても広い周波数領域でほ
ぼ一定の比誘電率を維持することを示している。
又、第2表は添加剤によつて誘電体損失角が添加
しないものに比して大きくなる傾向にあるが、周
波数が高くなるにつれて誘電体損失角が減少して
おり、高周波例えば1MHz以上では20×10-4以下
とすることが可能であることを示している。
MgO,ZnOまたはSb2O3を1種または2種以上添
加したものも同様の結果を示した。
このように本発明の誘電体組成物によれば、基
材が高周波領域において誘電体損失が極めて小さ
いため、添加剤の種類と添加量を変えることによ
つて充分使用に耐える誘電体損失を維持しつつ比
誘電率の種々の水準のものを実現することができ
る。このため、本発明の誘電体組成物は高周波用
機器の各種用途に適用可能となり、例えば高速度
計算機におけるデカツプリング・コンデンサー、
TEM波伝送路、分布定数型のフイルター、方向
性結合器、テレビジヨンチユーナー、クロスオー
バー用絶縁材料などに応用することができる。
前記実施例においては誘電体組成物をペースト
状として用いたが、該組成物はペースト状として
用いるに限らず、例えば従来の個別部品として用
いることも可能である。この場合は粉末を加圧成
型した後焼成するが、焼成温度が同様に1000℃程
度で充分であり、従来の磁器コンデンサーの焼結
温度よりも低いので極めて製造し易いものとな
る。例えば多層セラミツクコンデンサーとする場
合、従来の磁器コンデンサーでは内部電極材料が
高温に耐えるPd,Pt等に限定されていたが、本
発明の誘電体組成物によればAg−Pd等の安価な
材料を使用でき、総じて製品コストの低減に寄与
することができる利点がある。[Table] For the measurement range from 1KHz to 1MHz, a broadband dielectric loss measurement device made by Ando Electric is used.
A Meguro Denpa Q meter was used between Hz. Table 1 shows that the relative dielectric constant can be adjusted depending on the type of additive, and that even if the additive is added, a substantially constant relative dielectric constant is maintained over a wide frequency range.
Table 2 also shows that the dielectric loss angle tends to increase with additives compared to those without additives, but as the frequency increases, the dielectric loss angle decreases. This shows that it is possible to reduce the value to 20×10 -4 or less.
Similar results were obtained when one or more of MgO, ZnO, or Sb 2 O 3 was added. As described above, according to the dielectric composition of the present invention, the dielectric loss of the base material is extremely small in the high frequency range, so by changing the type and amount of additives, it is possible to maintain sufficient dielectric loss to withstand use. It is possible to realize various levels of dielectric constant while maintaining the same properties. Therefore, the dielectric composition of the present invention can be applied to various uses of high-frequency equipment, such as decoupling capacitors in high-speed computers,
It can be applied to TEM wave transmission lines, distributed constant filters, directional couplers, television tuners, crossover insulation materials, etc. In the above embodiments, the dielectric composition was used in the form of a paste, but the composition is not limited to being used in the form of a paste, but can also be used, for example, as a conventional individual component. In this case, the powder is pressure-molded and then fired, and the firing temperature is similarly sufficient at about 1000°C, which is lower than the sintering temperature of conventional porcelain capacitors, making it extremely easy to manufacture. For example, when making a multilayer ceramic capacitor, in conventional ceramic capacitors, the internal electrode materials are limited to Pd, Pt, etc. that can withstand high temperatures, but with the dielectric composition of the present invention, inexpensive materials such as Ag-Pd can be used. It has the advantage that it can be used to reduce overall product costs.
Claims (1)
及びTiO25重量%以下から成るチタン酸バリウム
磁器粉末100重量部が、4〜20重量部のガラス質
結合剤中に均一に分散されて成る低損失誘電体組
成物。 2 Ba4Ti13O3090重量%以上、BaO10重量%以下
及びTiO25重量%以下から成るチタン酸バリウム
磁器粉末100重量部が、4〜20重量部のガラス質
結合剤中に均一に分散されて成る粉末を基体と
し、該基体100重量部に対しSiO2,Al2O3,
NrO2,MgO,ZnO,BaOの1種または2種以上
を合計で0.2〜10重量部、あるいはIn2O3,
Bi2O3,Sb2O3,の1種または2種以上を合計で
0.2〜5重量部、あるいはSiO2,Al2O3,ZrO2,
MgO,ZnO,BaOの1種または2種以上を合計で
0.1〜9.9重量部とIn2O3,Bi2O3,Sb2O3の1種ま
たは2種以上を合計で0.1〜5重量部とを合わせ
て0.2〜10重量部を添加して成る低損失誘電体組
成物。 3 該ガラス質結合剤はPbO50〜80重量%、
B2O310〜40重量%およびPbF22〜15重量%を含
み、これらの合計が98重量%以上である第1また
は第2項の低損失誘電体組成物。 4 該ガラス質結合剤はPbO50〜80重量%、
B2O310〜40重量%、PbF22〜15重量%および
SiO20.1〜5重量%を含み、これらの合計が98重
量%以上である第1項または第2項の低損失誘電
体組成物。[Claims] 1 100 parts by weight of barium titanate porcelain powder consisting of 90% by weight or more of Ba 4 Ti 13 O 30 , 10% by weight or less of BaO, and 5% by weight or less of TiO 2 forms a vitreous bond of 4 to 20 parts by weight. A low-loss dielectric composition that is uniformly dispersed in an agent. 2 100 parts by weight of barium titanate porcelain powder consisting of at least 90% by weight of Ba 4 Ti 13 O 30 , not more than 10% by weight of BaO, and not more than 5% by weight of TiO 2 is uniformly dispersed in 4 to 20 parts by weight of a vitreous binder. SiO 2 , Al 2 O 3 ,
A total of 0.2 to 10 parts by weight of one or more of NrO 2 , MgO, ZnO, BaO, or In 2 O 3 ,
Bi 2 O 3 , Sb 2 O 3 , one or more types in total
0.2 to 5 parts by weight, or SiO 2 , Al 2 O 3 , ZrO 2 ,
A total of one or more of MgO, ZnO, and BaO
0.1 to 9.9 parts by weight and a total of 0.1 to 5 parts by weight of one or more of In 2 O 3 , Bi 2 O 3 , and Sb 2 O 3 in a total of 0.2 to 10 parts by weight. Lossy dielectric composition. 3 The vitreous binder contains 50 to 80% by weight of PbO,
2. The low loss dielectric composition according to claim 1 or 2, comprising 10 to 40% by weight of B2O3 and 2 to 15% by weight of PbF2 , the total of which is 98% by weight or more. 4 The vitreous binder contains 50 to 80% by weight of PbO,
B2O3 10-40 % by weight, PbF2 2-15% by weight and
2. The low loss dielectric composition according to item 1 or 2, which contains 0.1 to 5% by weight of SiO 2 , the total of which is 98% by weight or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15927378A JPS5598408A (en) | 1978-12-26 | 1978-12-26 | Low loss dielectric composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15927378A JPS5598408A (en) | 1978-12-26 | 1978-12-26 | Low loss dielectric composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5598408A JPS5598408A (en) | 1980-07-26 |
| JPS6111403B2 true JPS6111403B2 (en) | 1986-04-02 |
Family
ID=15690169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15927378A Granted JPS5598408A (en) | 1978-12-26 | 1978-12-26 | Low loss dielectric composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5598408A (en) |
-
1978
- 1978-12-26 JP JP15927378A patent/JPS5598408A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5598408A (en) | 1980-07-26 |
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