JPS61116852A - レジスト膜中の塵挨検査方法 - Google Patents

レジスト膜中の塵挨検査方法

Info

Publication number
JPS61116852A
JPS61116852A JP60215088A JP21508885A JPS61116852A JP S61116852 A JPS61116852 A JP S61116852A JP 60215088 A JP60215088 A JP 60215088A JP 21508885 A JP21508885 A JP 21508885A JP S61116852 A JPS61116852 A JP S61116852A
Authority
JP
Japan
Prior art keywords
pattern
defects
dust
electron beam
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60215088A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6222264B2 (2
Inventor
Fumio Mizuno
文夫 水野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP60215088A priority Critical patent/JPS61116852A/ja
Publication of JPS61116852A publication Critical patent/JPS61116852A/ja
Publication of JPS6222264B2 publication Critical patent/JPS6222264B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Analysing Materials By The Use Of Radiation (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Beam Exposure (AREA)
JP60215088A 1985-09-30 1985-09-30 レジスト膜中の塵挨検査方法 Granted JPS61116852A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60215088A JPS61116852A (ja) 1985-09-30 1985-09-30 レジスト膜中の塵挨検査方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60215088A JPS61116852A (ja) 1985-09-30 1985-09-30 レジスト膜中の塵挨検査方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP8134579A Division JPS567429A (en) 1979-06-29 1979-06-29 Patterning device

Publications (2)

Publication Number Publication Date
JPS61116852A true JPS61116852A (ja) 1986-06-04
JPS6222264B2 JPS6222264B2 (2) 1987-05-16

Family

ID=16666551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60215088A Granted JPS61116852A (ja) 1985-09-30 1985-09-30 レジスト膜中の塵挨検査方法

Country Status (1)

Country Link
JP (1) JPS61116852A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010217918A (ja) * 2010-05-18 2010-09-30 Dainippon Printing Co Ltd フォトマスクの欠陥修正方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51108580A (2) * 1975-03-19 1976-09-25 Fujitsu Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51108580A (2) * 1975-03-19 1976-09-25 Fujitsu Ltd

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010217918A (ja) * 2010-05-18 2010-09-30 Dainippon Printing Co Ltd フォトマスクの欠陥修正方法

Also Published As

Publication number Publication date
JPS6222264B2 (2) 1987-05-16

Similar Documents

Publication Publication Date Title
EP0206633B1 (en) Method of inspecting masks and apparatus thereof
US4937458A (en) Electron beam lithography apparatus including a beam blanking device utilizing a reference comparator
US4264822A (en) Electron beam testing method and apparatus of mask
JPS61116852A (ja) レジスト膜中の塵挨検査方法
JPS6228572B2 (2)
JPS61116851A (ja) 検査装置
JPH0660815B2 (ja) 荷電粒子ビームによるパターン欠陥検査方法およびその装置
JPS6258621A (ja) 微細パタ−ン形成方法
JPS596537A (ja) 欠陥検査装置
JPH03235949A (ja) マスク検査方法
JP3268713B2 (ja) Ｘ線マスク検査法
JPS6098342A (ja) マスク欠陥検査方法
JP2655513B2 (ja) 電子線露光装置
JPS6041456B2 (ja) 電子線を用いたパタ−ン検査装置
JPH05216211A (ja) マスクの検査方法および装置
JP2525221B2 (ja) マスク修正装置
JPS5633829A (en) Inspection of pattern
JPH02237107A (ja) パターン露光装置及びマスク検査方法
JPS59119721A (ja) パタ−ン検査方法
JPH04215419A (ja) 電子ビーム露光装置
JP2001203246A (ja) マスク検査方法
JPH02238313A (ja) マスク検査装置
JPS61134606A (ja) 半導体製造装置
JPS59195825A (ja) 荷電粒子線露光装置
JPS60167422A (ja) パタ−ンジエネレ−タ