JPS6112332B2 - - Google Patents

Info

Publication number
JPS6112332B2
JPS6112332B2 JP53088024A JP8802478A JPS6112332B2 JP S6112332 B2 JPS6112332 B2 JP S6112332B2 JP 53088024 A JP53088024 A JP 53088024A JP 8802478 A JP8802478 A JP 8802478A JP S6112332 B2 JPS6112332 B2 JP S6112332B2
Authority
JP
Japan
Prior art keywords
sample
backscattered
axis
backscattered electron
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53088024A
Other languages
Japanese (ja)
Other versions
JPS5514683A (en
Inventor
Masaji Kikuchi
Hidehiko Sekiguchi
Osamu Manabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Denshi KK filed Critical Nihon Denshi KK
Priority to JP8802478A priority Critical patent/JPS5514683A/en
Publication of JPS5514683A publication Critical patent/JPS5514683A/en
Publication of JPS6112332B2 publication Critical patent/JPS6112332B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は走査電子顕微鏡等における反射電子検
出装置の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in backscattered electron detection devices for scanning electron microscopes and the like.

試料表面の凹凸や組成物質の分布は二次元的に
観察する有力な装置として走査電子顕微鏡が用い
られている。この走査電子顕微鏡は試料に微小径
を有する電子ビームを照射し、該照射によつて試
料から発生する反射電子、2次電子等を電子線検
出器で検出して得られる信号を前記電子ビームの
試料面上における走査と同期したブラウン管の輝
度変調信号として用いることによつて凹凸像を得
るものである。ところで近時走査電子顕微鏡にお
いては試料室内に磁性物質を装填し、その磁区構
造を反射電子像によつて観察することが行なわれ
ている。この場合磁区コントラストは反射電子検
出器より試料上の電子線照射点に見込む立体角
(以下単に立体角と称す)に依存している。しか
るに従来装置においては反射電子検出器は試料室
内壁等に直接固定されているため、前述した立体
角は一定であり、従つて最適な磁区コントラスト
でもつて磁区構造の観察を行うことができない。
A scanning electron microscope is used as an effective device for two-dimensionally observing the unevenness of a sample surface and the distribution of constituent substances. This scanning electron microscope irradiates a sample with an electron beam having a minute diameter, and uses an electron beam detector to detect reflected electrons, secondary electrons, etc. generated from the sample by the irradiation, and detects the signal obtained from the electron beam. A concavo-convex image is obtained by using it as a brightness modulation signal of a cathode ray tube synchronized with scanning on the sample surface. Nowadays, in scanning electron microscopes, a magnetic substance is loaded into a sample chamber, and its magnetic domain structure is observed using a backscattered electron image. In this case, the magnetic domain contrast depends on the solid angle (hereinafter simply referred to as solid angle) observed by the backscattered electron detector at the electron beam irradiation point on the sample. However, in the conventional apparatus, the backscattered electron detector is directly fixed to the inner wall of the sample chamber, so the solid angle mentioned above is constant, and therefore the magnetic domain structure cannot be observed even with the optimum magnetic domain contrast.

本発明は斯様な欠点を解除するために、立体角
及び反射電子の検出角度を独立に、かつ任意に調
整することのできる装置を提供するもので、以下
図面に基づき詳説する。
In order to eliminate such drawbacks, the present invention provides an apparatus that can independently and arbitrarily adjust the solid angle and the detection angle of reflected electrons, and will be described in detail below with reference to the drawings.

第1図は本発明の一実施例を示す縦断面図、第
2図は第1図のA方向から見た図であり、1は走
査電子顕微鏡の試料室側壁である。2は該側壁1
の内側に水平移動可能におかれた試料ステージ
で、上面に試料3を保持した試料ホルダー4が載
置される。5は前記側壁1をOリングパツキング
6によつて気密を保つて貫通した回転筒で、該回
転筒の軸心は電子ビームの光軸と交叉するように
おかれており、又該回転筒の軸心と光軸との交点
に試料3の表面がおかれる。前記回転筒5の内側
にはOリングパツキング7を介して軸8が同芯的
に且つ移動可能に挿入されており、又該回転筒5
の一端(真空側)には案内体9が固定され、他端
(大気側)にはつまみ部10と雄ネジ部11とが
形成されている。前記案内体9には移動体12が
前記回転筒5の軸心に対して直交する方向に移動
可能に取付けられている。該移動体12と前記軸
8との間には前記案内体9に回転可能に取付けら
れたテコ体13が介在されており、又該移動体1
2はスプリング14によつて常にテコ体13と係
合するように押圧されている。前記回転筒5に形
成した雄ネジ部11には袋ナツト15が螺合され
ており、該袋ナツトはビス16を介して前記軸8
の端部に固定されている。17は前記移動体12
に固定された検出器保持板で、該保持板の先端下
面つまり、試料3と対向する面には例えばPN接
合半導体の如き反射電子検出器18が取付けられ
ている。該反射電子検出器18は電子線照射に基
づき試料から発生する反射電子Eを検出し、その
検出信号が図示外の増巾器を介して増巾された後
ブラウン管の輝度変調グリツドに供給される。
FIG. 1 is a longitudinal sectional view showing an embodiment of the present invention, and FIG. 2 is a view seen from direction A in FIG. 1, where 1 is a side wall of a sample chamber of a scanning electron microscope. 2 is the side wall 1
A sample stage is horizontally movable inside the sample stage, and a sample holder 4 holding a sample 3 on its upper surface is placed. Reference numeral 5 denotes a rotary tube that penetrates the side wall 1 in an airtight manner with an O-ring packing 6, and the axis of the rotary tube is placed to intersect with the optical axis of the electron beam. The surface of the sample 3 is placed at the intersection of the axial center and the optical axis. A shaft 8 is concentrically and movably inserted into the rotary cylinder 5 via an O-ring packing 7, and the rotary cylinder 5
A guide body 9 is fixed to one end (vacuum side), and a knob portion 10 and a male screw portion 11 are formed at the other end (atmospheric side). A movable body 12 is attached to the guide body 9 so as to be movable in a direction perpendicular to the axis of the rotary cylinder 5. A lever body 13 rotatably attached to the guide body 9 is interposed between the movable body 12 and the shaft 8, and the movable body 1
2 is constantly pressed by a spring 14 so as to engage with the lever body 13. A cap nut 15 is screwed into the male screw portion 11 formed on the rotary cylinder 5, and the cap nut 15 is connected to the shaft 8 via a screw 16.
is fixed at the end of the 17 is the moving body 12
A backscattered electron detector 18, such as a PN junction semiconductor, is attached to the bottom surface of the tip of the holding plate, that is, the surface facing the sample 3. The backscattered electron detector 18 detects backscattered electrons E generated from the sample based on electron beam irradiation, and the detected signal is amplified via an amplifier not shown and then supplied to the brightness modulation grid of the cathode ray tube. .

しかして今、袋ナツト15を例えば時計方向に
回転させると軸8が前進(第1図中矢印B方向)
し、その移動がテコ体13を介して移動体12に
伝達されるため、移動体12つまり保持板17が
第1図中点線aで示すように上方に移動する。こ
れにより反射電子検出器18は試料3から遠ざけ
られるため、立体角は小さくなる。又、袋ナツト
15は前述とは逆の方向(反時計方向)に回転す
れば、移動体12(保持板17)は下降し、反電
子検出器18は前述とは逆に試料3に接近するた
め、立体角は大きくなる。従つて袋ナツト15を
任意に操作することによりある反射電子の取出角
において立体角を任意に選択することができる。
However, now, when the cap nut 15 is rotated, for example, clockwise, the shaft 8 moves forward (in the direction of arrow B in FIG. 1).
However, since this movement is transmitted to the movable body 12 via the lever body 13, the movable body 12, that is, the holding plate 17, moves upward as shown by the dotted line a in FIG. This moves the backscattered electron detector 18 away from the sample 3, so the solid angle becomes smaller. Furthermore, if the cap nut 15 is rotated in the opposite direction (counterclockwise) to the above, the movable body 12 (holding plate 17) descends, and the anti-electron detector 18 approaches the sample 3 in the opposite direction to the above. Therefore, the solid angle becomes larger. Therefore, by arbitrarily operating the cap nut 15, the solid angle can be arbitrarily selected at a certain take-off angle of reflected electrons.

一方、つまみ部10により回転筒5を時計或い
は反時計方向に回転させると案内体9、移動体1
2及び保持板17を介して反射電子検出器18が
試料3上の電子線照射点を中心にして回転するた
め、反射電子の検出角を変えることができる。
On the other hand, when the rotary tube 5 is rotated clockwise or counterclockwise using the knob 10, the guide body 9 and the movable body 1 are rotated.
Since the backscattered electron detector 18 rotates around the electron beam irradiation point on the sample 3 via the backscattered electron detector 2 and the holding plate 17, the detection angle of backscattered electrons can be changed.

以上詳説したよに本発明によれば、反射電子検
出器を試料上の電子線照射点を中心にして回転あ
るいは試料に対して接近、離間させることができ
るため、反射電子の検出角度を任意に設定できる
と共に、その設定角度において、立体角を任意に
調整することができる。従つて、常に最適なコン
トラストでもつて磁区構造の観察を行うことがで
きる。
As described in detail above, according to the present invention, the backscattered electron detector can be rotated around the electron beam irradiation point on the sample, or moved closer to or away from the sample, so the detection angle of backscattered electrons can be set arbitrarily. Not only can the solid angle be set, but also the solid angle can be arbitrarily adjusted within the set angle. Therefore, the magnetic domain structure can always be observed with optimal contrast.

又、試料の走査像を高分解能でもつて観察する
場合、試料照射用電子線は非常に細く絞られるた
め、ビーム電流は非常に少なくなり、反射電子検
出器からの出力信号が低下してSN比も低下する
わけであるが、本発明では反射電子検出器を試料
に対して接近させることができるため、反射電子
検出器への反射電子の量を増大させることがで
き、SN比の向上をはかることができる等、実用
性大なる効果を有する。
In addition, when observing a scanned image of a sample with high resolution, the electron beam for irradiating the sample is focused very narrowly, so the beam current becomes very small, and the output signal from the backscattered electron detector decreases, causing the S/N ratio to decrease. However, in the present invention, since the backscattered electron detector can be brought closer to the sample, the amount of backscattered electrons to the backscattered electron detector can be increased, and the S/N ratio can be improved. It has great practical effects.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す縦断面図、第
2図は第1図をA方向より見た図である。 図において、1は試料室側壁、2は試料ステー
ジ、3は試料、4は試料ホルダー、5は回転筒、
6及び7はOリングパツキング、8は軸、9は案
内体、10はつまみ部、11は雄ネジ部、12は
移動体、13はテコ体、14はスプリング、15
は袋ナツト、16はビス、17は検出器保持板、
18は反射電子検出器である。
FIG. 1 is a longitudinal sectional view showing an embodiment of the present invention, and FIG. 2 is a view of FIG. 1 viewed from direction A. In the figure, 1 is the sample chamber side wall, 2 is the sample stage, 3 is the sample, 4 is the sample holder, 5 is the rotary cylinder,
6 and 7 are O-ring packing, 8 is a shaft, 9 is a guide body, 10 is a knob part, 11 is a male thread part, 12 is a moving body, 13 is a lever body, 14 is a spring, 15
is a cap nut, 16 is a screw, 17 is a detector holding plate,
18 is a backscattered electron detector.

Claims (1)

【特許請求の範囲】[Claims] 1 軸心が電子ビームの光軸と直交するように試
料室壁を貫通して取付けられた筒状の回転体と、
該回転体の軸心と電子ビームの光軸とが交叉する
点に表面が一致するように配置された試料と、前
記試料室側において前記回転体に固定された案内
体と、該案内体に移動できるように取付けられた
移動体と、前記試料と対向するように配置され、
かつ前記移動体に取付けられた反射電子検出器と
を備え、前記移動体の前記案内に沿う移動方向は
前記反射電子検出器の検出面に垂直で、かつ前記
回転体の軸心にも垂直であることを特徴とする走
査電子顕微鏡における反射電子検出装置。
1. A cylindrical rotating body installed through the sample chamber wall so that its axis is perpendicular to the optical axis of the electron beam;
a sample arranged so that its surface coincides with the point where the axis of the rotating body and the optical axis of the electron beam intersect; a guide body fixed to the rotating body on the side of the sample chamber; a movable body mounted so as to be movable; and a movable body disposed to face the sample;
and a backscattered electron detector attached to the moving body, wherein the moving direction of the moving body along the guide is perpendicular to the detection surface of the backscattered electron detector and also perpendicular to the axis of the rotating body. A backscattered electron detection device in a scanning electron microscope characterized by the following.
JP8802478A 1978-07-19 1978-07-19 Reflected electron detector for scan electronic microscope Granted JPS5514683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8802478A JPS5514683A (en) 1978-07-19 1978-07-19 Reflected electron detector for scan electronic microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8802478A JPS5514683A (en) 1978-07-19 1978-07-19 Reflected electron detector for scan electronic microscope

Publications (2)

Publication Number Publication Date
JPS5514683A JPS5514683A (en) 1980-02-01
JPS6112332B2 true JPS6112332B2 (en) 1986-04-08

Family

ID=13931250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8802478A Granted JPS5514683A (en) 1978-07-19 1978-07-19 Reflected electron detector for scan electronic microscope

Country Status (1)

Country Link
JP (1) JPS5514683A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584657U (en) * 1981-06-30 1983-01-12 株式会社コンポジツトシステム研究所 Electrode material for plating
JPS613662U (en) * 1984-06-12 1986-01-10 日本電子株式会社 Secondary electron detection device
JPS6248658U (en) * 1985-09-12 1987-03-25

Also Published As

Publication number Publication date
JPS5514683A (en) 1980-02-01

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