JPS61159725A - 化合物半導体液相成長法 - Google Patents

化合物半導体液相成長法

Info

Publication number
JPS61159725A
JPS61159725A JP59281563A JP28156384A JPS61159725A JP S61159725 A JPS61159725 A JP S61159725A JP 59281563 A JP59281563 A JP 59281563A JP 28156384 A JP28156384 A JP 28156384A JP S61159725 A JPS61159725 A JP S61159725A
Authority
JP
Japan
Prior art keywords
type
layer
solution
liquid phase
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59281563A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0464456B2 (da
Inventor
Hiroyuki Kano
浩之 加納
Masafumi Hashimoto
雅文 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Central R&D Labs Inc
Original Assignee
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Central R&D Labs Inc filed Critical Toyota Central R&D Labs Inc
Priority to JP59281563A priority Critical patent/JPS61159725A/ja
Publication of JPS61159725A publication Critical patent/JPS61159725A/ja
Publication of JPH0464456B2 publication Critical patent/JPH0464456B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP59281563A 1984-12-29 1984-12-29 化合物半導体液相成長法 Granted JPS61159725A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59281563A JPS61159725A (ja) 1984-12-29 1984-12-29 化合物半導体液相成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59281563A JPS61159725A (ja) 1984-12-29 1984-12-29 化合物半導体液相成長法

Publications (2)

Publication Number Publication Date
JPS61159725A true JPS61159725A (ja) 1986-07-19
JPH0464456B2 JPH0464456B2 (da) 1992-10-15

Family

ID=17640928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59281563A Granted JPS61159725A (ja) 1984-12-29 1984-12-29 化合物半導体液相成長法

Country Status (1)

Country Link
JP (1) JPS61159725A (da)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911467A (da) * 1972-05-30 1974-01-31
JPS5325633A (en) * 1976-08-21 1978-03-09 Sumitomo Metal Ind Granulation method of melted blast furnace slag
JPS5531610A (en) * 1978-08-28 1980-03-06 Nissan Motor Co Ltd Structure of bumper
JPS5797665A (en) * 1980-12-10 1982-06-17 Oki Electric Ind Co Ltd Manufacture of npn transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911467A (da) * 1972-05-30 1974-01-31
JPS5325633A (en) * 1976-08-21 1978-03-09 Sumitomo Metal Ind Granulation method of melted blast furnace slag
JPS5531610A (en) * 1978-08-28 1980-03-06 Nissan Motor Co Ltd Structure of bumper
JPS5797665A (en) * 1980-12-10 1982-06-17 Oki Electric Ind Co Ltd Manufacture of npn transistor

Also Published As

Publication number Publication date
JPH0464456B2 (da) 1992-10-15

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