JPS61174634A - ドライエツチング方法 - Google Patents

ドライエツチング方法

Info

Publication number
JPS61174634A
JPS61174634A JP60013490A JP1349085A JPS61174634A JP S61174634 A JPS61174634 A JP S61174634A JP 60013490 A JP60013490 A JP 60013490A JP 1349085 A JP1349085 A JP 1349085A JP S61174634 A JPS61174634 A JP S61174634A
Authority
JP
Japan
Prior art keywords
etching
gas
aluminum
chlorine
exhaust
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60013490A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0526331B2 (fr
Inventor
Takashi Yamazaki
隆 山崎
Haruo Okano
晴雄 岡野
Takehiro Kawasaki
川崎　健弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokuda Seisakusho Co Ltd
Original Assignee
Toshiba Corp
Tokuda Seisakusho Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokuda Seisakusho Co Ltd filed Critical Toshiba Corp
Priority to JP60013490A priority Critical patent/JPS61174634A/ja
Publication of JPS61174634A publication Critical patent/JPS61174634A/ja
Publication of JPH0526331B2 publication Critical patent/JPH0526331B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Drying Of Semiconductors (AREA)
JP60013490A 1985-01-29 1985-01-29 ドライエツチング方法 Granted JPS61174634A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60013490A JPS61174634A (ja) 1985-01-29 1985-01-29 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60013490A JPS61174634A (ja) 1985-01-29 1985-01-29 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS61174634A true JPS61174634A (ja) 1986-08-06
JPH0526331B2 JPH0526331B2 (fr) 1993-04-15

Family

ID=11834555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60013490A Granted JPS61174634A (ja) 1985-01-29 1985-01-29 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS61174634A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63301522A (ja) * 1987-01-29 1988-12-08 Tokyo Electron Ltd 処理装置
US4897171A (en) * 1985-11-26 1990-01-30 Tadahiro Ohmi Wafer susceptor
JP2000299311A (ja) * 1991-04-04 2000-10-24 Hitachi Ltd プラズマ処理装置
JP2000299312A (ja) * 1991-04-04 2000-10-24 Hitachi Ltd プラズマ処理方法及び半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54118172A (en) * 1978-03-06 1979-09-13 Nichiden Varian Kk Method of dry etching aluminum
JPS57133633A (en) * 1981-02-13 1982-08-18 Anelva Corp Dry-etching device
US4376672A (en) * 1981-10-26 1983-03-15 Applied Materials, Inc. Materials and methods for plasma etching of oxides and nitrides of silicon
US4412885A (en) * 1982-11-03 1983-11-01 Applied Materials, Inc. Materials and methods for plasma etching of aluminum and aluminum alloys

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54118172A (en) * 1978-03-06 1979-09-13 Nichiden Varian Kk Method of dry etching aluminum
JPS57133633A (en) * 1981-02-13 1982-08-18 Anelva Corp Dry-etching device
US4376672A (en) * 1981-10-26 1983-03-15 Applied Materials, Inc. Materials and methods for plasma etching of oxides and nitrides of silicon
US4412885A (en) * 1982-11-03 1983-11-01 Applied Materials, Inc. Materials and methods for plasma etching of aluminum and aluminum alloys

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4897171A (en) * 1985-11-26 1990-01-30 Tadahiro Ohmi Wafer susceptor
JPS63301522A (ja) * 1987-01-29 1988-12-08 Tokyo Electron Ltd 処理装置
JP2000299311A (ja) * 1991-04-04 2000-10-24 Hitachi Ltd プラズマ処理装置
JP2000299312A (ja) * 1991-04-04 2000-10-24 Hitachi Ltd プラズマ処理方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0526331B2 (fr) 1993-04-15

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