JPS61194831A - パタン形成方法 - Google Patents
パタン形成方法Info
- Publication number
- JPS61194831A JPS61194831A JP60035692A JP3569285A JPS61194831A JP S61194831 A JPS61194831 A JP S61194831A JP 60035692 A JP60035692 A JP 60035692A JP 3569285 A JP3569285 A JP 3569285A JP S61194831 A JPS61194831 A JP S61194831A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- pattern forming
- forming method
- sensitive material
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60035692A JPS61194831A (ja) | 1985-02-25 | 1985-02-25 | パタン形成方法 |
| US06/721,306 US4634645A (en) | 1984-04-13 | 1985-04-09 | Method of forming resist micropattern |
| CA000478690A CA1264596A (fr) | 1984-04-13 | 1985-04-10 | Methode de formation de microconfigurations sur un resist |
| EP85104417A EP0158357B1 (fr) | 1984-04-13 | 1985-04-11 | Procédé pour réaliser des structures microréserve |
| DE8585104417T DE3581822D1 (de) | 1984-04-13 | 1985-04-11 | Verfahren zur herstellung von mikroschutzlack-bildern. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60035692A JPS61194831A (ja) | 1985-02-25 | 1985-02-25 | パタン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61194831A true JPS61194831A (ja) | 1986-08-29 |
| JPH0455328B2 JPH0455328B2 (fr) | 1992-09-03 |
Family
ID=12448949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60035692A Granted JPS61194831A (ja) | 1984-04-13 | 1985-02-25 | パタン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61194831A (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6209699B1 (en) | 1998-09-22 | 2001-04-03 | Denso Corporation | Electromagnetic clutch |
| KR100640640B1 (ko) | 2005-04-19 | 2006-10-31 | 삼성전자주식회사 | 미세 피치의 하드마스크를 이용한 반도체 소자의 미세 패턴형성 방법 |
-
1985
- 1985-02-25 JP JP60035692A patent/JPS61194831A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6209699B1 (en) | 1998-09-22 | 2001-04-03 | Denso Corporation | Electromagnetic clutch |
| KR100640640B1 (ko) | 2005-04-19 | 2006-10-31 | 삼성전자주식회사 | 미세 피치의 하드마스크를 이용한 반도체 소자의 미세 패턴형성 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0455328B2 (fr) | 1992-09-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR930000900B1 (ko) | 리소그래픽 프로세스를 이용한 디바이스 제조방법 | |
| US10256001B2 (en) | Metal grating structure for X-ray | |
| US6268226B1 (en) | Reactive ion etch loading measurement technique | |
| US4634645A (en) | Method of forming resist micropattern | |
| US7080330B1 (en) | Concurrent measurement of critical dimension and overlay in semiconductor manufacturing | |
| WO1986001591A1 (fr) | Procedes interferometriques pour la fabrication de dispositifs | |
| JPS6245028A (ja) | ウエ−ハに位置合せマ−クを形成する方法 | |
| US3483108A (en) | Method of chemically etching a non-conductive material using an electrolytically controlled mask | |
| JP2003045767A (ja) | レジスト処理における温度を調節する方法 | |
| EP0217463B1 (fr) | Procédé pour la détermination du taux d'exposition pour une couche de photoréserve | |
| JPH01117034A (ja) | トレンチエッチング方法 | |
| JPH0789051B2 (ja) | エッチング深さ測定方法及びその装置 | |
| JPH0455328B2 (fr) | ||
| US5899748A (en) | Method for anchoring via/contact in semiconductor devices and devices formed | |
| JPH03235331A (ja) | グレーティングパターン形成方法 | |
| JP2723726B2 (ja) | レジストパターン形成方法 | |
| JP2620952B2 (ja) | 微細パターン形成方法 | |
| JPS6246976B2 (fr) | ||
| JPH0147009B2 (fr) | ||
| JPS58202526A (ja) | X線露光用マスクの製造方法 | |
| JPH02264261A (ja) | レジストパターンの形成方法 | |
| JP2003177218A (ja) | ドライエッチングのモニター | |
| JP3570107B2 (ja) | レジストパターンの形成方法及び半導体装置の製造方法 | |
| JPS5812337B2 (ja) | ビサイパタ−ンノ トウメイマクノケイセイホウホウホウ | |
| JPS593953A (ja) | 半導体装置の製造方法 |