JPH0455328B2 - - Google Patents

Info

Publication number
JPH0455328B2
JPH0455328B2 JP60035692A JP3569285A JPH0455328B2 JP H0455328 B2 JPH0455328 B2 JP H0455328B2 JP 60035692 A JP60035692 A JP 60035692A JP 3569285 A JP3569285 A JP 3569285A JP H0455328 B2 JPH0455328 B2 JP H0455328B2
Authority
JP
Japan
Prior art keywords
etching
sensitive material
pattern
pattern forming
forming method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60035692A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61194831A (ja
Inventor
Korehito Matsuda
Katsuyuki Harada
Shigeru Morya
Tetsuyoshi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP60035692A priority Critical patent/JPS61194831A/ja
Priority to US06/721,306 priority patent/US4634645A/en
Priority to CA000478690A priority patent/CA1264596A/fr
Priority to EP85104417A priority patent/EP0158357B1/fr
Priority to DE8585104417T priority patent/DE3581822D1/de
Publication of JPS61194831A publication Critical patent/JPS61194831A/ja
Publication of JPH0455328B2 publication Critical patent/JPH0455328B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
JP60035692A 1984-04-13 1985-02-25 パタン形成方法 Granted JPS61194831A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP60035692A JPS61194831A (ja) 1985-02-25 1985-02-25 パタン形成方法
US06/721,306 US4634645A (en) 1984-04-13 1985-04-09 Method of forming resist micropattern
CA000478690A CA1264596A (fr) 1984-04-13 1985-04-10 Methode de formation de microconfigurations sur un resist
EP85104417A EP0158357B1 (fr) 1984-04-13 1985-04-11 Procédé pour réaliser des structures microréserve
DE8585104417T DE3581822D1 (de) 1984-04-13 1985-04-11 Verfahren zur herstellung von mikroschutzlack-bildern.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60035692A JPS61194831A (ja) 1985-02-25 1985-02-25 パタン形成方法

Publications (2)

Publication Number Publication Date
JPS61194831A JPS61194831A (ja) 1986-08-29
JPH0455328B2 true JPH0455328B2 (fr) 1992-09-03

Family

ID=12448949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60035692A Granted JPS61194831A (ja) 1984-04-13 1985-02-25 パタン形成方法

Country Status (1)

Country Link
JP (1) JPS61194831A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4174896B2 (ja) 1998-09-22 2008-11-05 株式会社デンソー 電磁クラッチ
KR100640640B1 (ko) 2005-04-19 2006-10-31 삼성전자주식회사 미세 피치의 하드마스크를 이용한 반도체 소자의 미세 패턴형성 방법

Also Published As

Publication number Publication date
JPS61194831A (ja) 1986-08-29

Similar Documents

Publication Publication Date Title
KR930000900B1 (ko) 리소그래픽 프로세스를 이용한 디바이스 제조방법
WO1986001591A1 (fr) Procedes interferometriques pour la fabrication de dispositifs
US4165395A (en) Process for forming a high aspect ratio structure by successive exposures with electron beam and actinic radiation
US6268226B1 (en) Reactive ion etch loading measurement technique
EP0158357B1 (fr) Procédé pour réaliser des structures microréserve
JP2003502698A (ja) 電子線露光による193nm感光性フォトレジスト材料の改変
EP0379173B1 (fr) Matériaux de réserve pour lithographie avec faisceau électronique ou rayons X
US3489564A (en) Photolytic etching of silicon dioxide
EP0217463A1 (fr) Procédé pour la détermination du taux d'exposition pour une couche de photoréserve
JPS61194831A (ja) パタン形成方法
JPH0789051B2 (ja) エッチング深さ測定方法及びその装置
JP2001127037A (ja) 微細パターンの形成方法および半導体装置の製造方法
JPH09167733A (ja) パターン形成方法
US4600684A (en) Process for forming a negative resist using high energy beam
JPH03235331A (ja) グレーティングパターン形成方法
JPH0147009B2 (fr)
Herbert et al. Dry development lithography by a novel ion-beam process
US20060147839A1 (en) Photosensitive coating material for a substrate
JP2620952B2 (ja) 微細パターン形成方法
JPS58155550A (ja) 異なる深さを持つ溝を同時に形成する方法
JPS6048023B2 (ja) ポジ型レジスト
JPH06267830A (ja) X線マスクの製造方法
EP0425957A2 (fr) Procédé de fabrication d'un composant semi-conducteur incluant une étape de gravure d'une couche isolante
RU1806419C (ru) Способ определени момента окончани процесса ионного травлени пленок
KR19990055183A (ko) 반도체 소자의 얼라인 키 형성 방법