JPS61222013A - Magneto-resistance effect head - Google Patents
Magneto-resistance effect headInfo
- Publication number
- JPS61222013A JPS61222013A JP6476085A JP6476085A JPS61222013A JP S61222013 A JPS61222013 A JP S61222013A JP 6476085 A JP6476085 A JP 6476085A JP 6476085 A JP6476085 A JP 6476085A JP S61222013 A JPS61222013 A JP S61222013A
- Authority
- JP
- Japan
- Prior art keywords
- patterns
- resistance
- resistance patterns
- pattern
- permalloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title claims abstract description 11
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims description 5
- 230000005291 magnetic effect Effects 0.000 abstract description 16
- 229910000889 permalloy Inorganic materials 0.000 abstract description 5
- 230000001681 protective effect Effects 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 238000010030 laminating Methods 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000011295 pitch Substances 0.000 abstract 1
- 230000004304 visual acuity Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 101150096839 Fcmr gene Proteins 0.000 description 1
- 229910018499 Ni—F Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は磁気抵抗効果へヴド（以下、ＭＲへ・ｊドと記
す）の基本構造忙関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the basic structure of a magnetoresistive effect (hereinafter referred to as MR).
本発明はＭＲヘヅド分野に於て、基板上に異方性磁気抵
抗効果を有する強磁性薄膜パターンと絶縁層を交互に複
数層積層するとともに、該強磁性薄膜パターンを電気的
に導通することにより。The present invention is applied in the field of MR heads by alternately stacking a plurality of ferromagnetic thin film patterns having an anisotropic magnetoresistive effect and insulating layers on a substrate, and electrically conducting the ferromagnetic thin film patterns. .
狭ピッチで配置され几磁気信号の検出を可能ならしめた
ものである。They are arranged at a narrow pitch, making it possible to detect magnetic signals.
従来のＭＲ素子は異方性磁気抵抗効果を有する強磁性薄
膜をｆａ４図のようにパターニングされていた。このよ
うなＭＲ素子ｈｚ ｌＡ部磁界Ｈ中にあるとき、外部磁
界の方向が抵抗パターンを流れる電流に対して角度０傾
いているとすればＭＲ素子の抵抗Ｒ（０）は
Ｒ（θ１ ’＝ Ｒ＊１− ΔＲ８１ｎ ”θ但し Δ
Ｒ＝＝Ｒ＃ −Ｒふ
で表わされる。ＲＩＩとＲＬｔｆそれぞれ外部磁界Ｈと
電流が平行及び直角のときの抵抗値を表わし、ΔＲＦｉ
最大変化量を表わしている。第５図けＦ’Ｇ（’Ｆｒｅ
ｑｕｅｎｃｙ Ｇｅｎｅｒａｔｃｒ）信号のピック７９
１図であり、ＭＲ素子の抵抗Ｒ（θ］は極の境界部で最
大にな炒
Ｒ（θ）＝ＲＪＬ
となる。簗５図の’Ｆ Ｇ （’ｙｒｇｑｘｅｎｃｙ
Ｇｔｒｎｅｒａｔｏｒ＋磁石の磁束の流れは第６図のよ
うになっており、ｐＧ信号のピグクアヴプには磁極境界
部の磁界町を使５゜ＭＲ素子の抵抗値は極の境界部で最
大となり極の中央で最小となる。In the conventional MR element, a ferromagnetic thin film having an anisotropic magnetoresistive effect is patterned as shown in the FA4 diagram. When the MR element is in the magnetic field H of the MR element hz lA, if the direction of the external magnetic field is inclined at an angle of 0 with respect to the current flowing through the resistance pattern, the resistance R(0) of the MR element is R(θ1'= R*1- ΔR81n ”θHowever Δ
It is expressed as R==R# -Rfu. RII and RLtf represent the resistance values when the external magnetic field H and the current are parallel and perpendicular, respectively, and ΔRFi
It represents the maximum amount of change. Figure 5 F'G ('Fre
Quency Generatcr) signal pick 79
1, the resistance R(θ) of the MR element is maximum at the boundary between the poles, R(θ)=RJL.
The flow of magnetic flux in the Gtrnerator + magnet is as shown in Figure 6. The magnetic field at the magnetic pole boundary is used for pG signal pickup, and the resistance value of the 5° MR element is maximum at the pole boundary and at the center of the pole. Minimum.
〔発明が解決しようとする問題点及び目的〕しかし、前
述の従来技術ではＭＲ素子の抵抗パターン全体の幅がＦ
Ｇ磁石のピッチ幅より小さくなければならず、ＦＧ磁石
のピッチが小さくなるにつれ限界が出てくる。本発明け
このような問題点を解決するもので、その目的とすると
ころは微細な磁気記録の検出を可能ならしめるＭＲヘッ
リド提供するところにある。[Problems and objects to be solved by the invention] However, in the prior art described above, the width of the entire resistance pattern of the MR element is F
It must be smaller than the pitch width of the G magnet, and as the pitch of the FG magnet becomes smaller, a limit appears. The present invention is intended to solve these problems, and its purpose is to provide an MR head that makes it possible to detect minute magnetic recordings.
ｒ問題を解決するｔめの手段〕
本発明のＭＲへリドは、基板上に異方性磁気抵抗効果を
有する強磁性薄模パターンと絶縁層を交互に複数層積層
するとともに該強磁性薄嗅パターンは電気的に導通され
ることを特徴とする。Tth Means for Solving Problem R] The MR helide of the present invention has a plurality of ferromagnetic thin pattern patterns having an anisotropic magnetoresistive effect and insulating layers alternately laminated on a substrate, and the ferromagnetic thin pattern The pattern is characterized in that it is electrically conductive.
本発明の上記の構造によれば、従来のＭＦｊ素子の平面
的な抵抗パターンを立体的にすることＫより抵抗パター
ンを微小部分に集中させることができるため、微少磁界
に対する検出能力を飛躍的に向上させることｂ″−でき
る。According to the above-described structure of the present invention, the resistance pattern can be concentrated in a minute part rather than making the planar resistance pattern of the conventional MFj element three-dimensional, so the detection ability for minute magnetic fields can be dramatically improved. It is possible to improve b″.
＠１図は本発明の一実施例の外形図であす、第２図は第
１図の抵抗パターン図であり、第３図は第１図の抵抗パ
ターン部１１−１．の断面図である。@ Figure 1 is an external view of one embodiment of the present invention, Figure 2 is a diagram of the resistance pattern of Figure 1, and Figure 3 is a diagram of the resistance pattern portion 11-1 of Figure 1. FIG.
基板１の上にパーマロイ（Ｎｉ −Ｆｓ＋ ）系の抵抗
パターン２と絶縁層３を電気的に導通をとりながら積層
させて最後に保護膜４で覆う構造になっている。パーマ
ロイ系の抵抗パターンは磁場中で蒸着或はスパッタリン
グして形成される。ま几絶縁層けＢｉ Ｏ膜などによっ
て形成している。本発明の一実施例は次のような工程に
よって製造することｂＺできる。まずガラス基板やセラ
ミック基板上に第７図のような抵抗パターンを形成する
。次ＫｔＪＥ８図のよ５に抵抗パターンの導通部を除い
て絶縁層を形成する。次に再び第９図のように抵抗パタ
ーンを形成し、第１０図のようＫＪＩＴｈ縁層を形成す
る。The structure is such that a permalloy (Ni-Fs+)-based resistance pattern 2 and an insulating layer 3 are laminated on a substrate 1 while maintaining electrical continuity, and are finally covered with a protective film 4. Permalloy resistance patterns are formed by vapor deposition or sputtering in a magnetic field. The insulating layer is formed of a BiO film or the like. An embodiment of the present invention can be manufactured by the following steps. First, a resistance pattern as shown in FIG. 7 is formed on a glass substrate or a ceramic substrate. Next, as shown in Figure 5 of KtJE8, an insulating layer is formed except for the conductive portion of the resistor pattern. Next, a resistor pattern is formed again as shown in FIG. 9, and a KJITh edge layer is formed as shown in FIG.
更に第１１図、第１２図のように同様の工程を経てｌ！
１３図のような抵抗パターンを形成し、最後に屓１４図
のように保護膜で覆う。以上のような製造工程をとるこ
とにより、第３図に示し友ように抵抗パターンの両端で
交互ＶＣ電気的な導通をとることができ、微小部分に多
くの抵抗パターンを集中させることができる。−１！友
本発明の一実施例では端子部も抵抗パターンと同一材料
で形成しているが、異方性磁気抵抗効果の小さな導体層
で形成干る等良好な特性を得る。抵抗パターンと導体層
の電気的な導通は第３図の抵抗パターンのように膜の重
ね合わせによって行う。Furthermore, through the same process as shown in FIGS. 11 and 12, l!
A resistor pattern as shown in Fig. 13 is formed, and finally it is covered with a protective film as shown in Fig. 14. By employing the manufacturing process as described above, it is possible to provide alternating VC electrical continuity at both ends of the resistor pattern as shown in FIG. 3, and it is possible to concentrate many resistor patterns in a minute portion. -1! In one embodiment of the present invention, the terminal portion is also formed of the same material as the resistor pattern, but good characteristics can be obtained by forming it with a conductor layer having a small anisotropic magnetoresistive effect. Electrical continuity between the resistance pattern and the conductor layer is achieved by overlapping films as in the resistance pattern shown in FIG.
本発明は薄嘆技術を基礎にしたものであるが、薄喚技術
はＩＣの高密度化などによりパターン幅数μｍを笑現し
ており、本発明のＭＲへリドに於ても数μｍの薄嘆抵抗
パターンを積層することにより飛躍的に分解能を向上さ
せることができる。The present invention is based on thinning technology, but thinning technology has realized a pattern width of several μm due to the high density of IC, and the MR helid of the present invention has a pattern width of several μm. The resolution can be dramatically improved by stacking resistor patterns.
し７ｔｘ−って、本発明によれば従来のＭＲ素子では実
現し難い微細な磁気記録の検出にも充分対処できる。ｔ
ｆｃＭＲ素子と同一の抵抗パターンであれば１本発明の
方が積層している分だけ検出能力ｂＺ優れているため微
弱磁界でも検出できる。したがって、第５図のようなＦ
Ｇ倍信号ピヴクアダプに於てはＦＧ磁石とのギャップを
大きくとることができギャップ管ＡＩｈ＝しやすい。こ
のことは磁気エンコータなどＫは非常に大きなメリット
となる。According to the present invention, it is possible to sufficiently cope with the detection of minute magnetic recordings that are difficult to realize with conventional MR elements. t
If the resistance pattern is the same as that of the fcMR element, the detection ability bZ of the present invention is superior due to the laminated structure, so it can detect even a weak magnetic field. Therefore, F as shown in Figure 5
In the case of the G-double signal PIVQ adapter, the gap between the FG magnet and the FG magnet can be made larger, making it easier to create a gap tube AIh. This is a great advantage for K, such as magnetic encoders.
以上述べ友ように本発明は磁界検出に対して極めて有効
であり且つ適用分野も広く、その効果は抜群である。As stated above, the present invention is extremely effective for magnetic field detection, has wide application fields, and has outstanding effects.
第１図は本発明の一実施例の外形図。
第２図はｉｉｌ！１図の抵抗パターン図。
第３図は第１図の抵抗パターン部Ａ１−１２の断面図。
第４図は従来のＭＲ素子の抵抗パターン図。
第５図はＰＧ倍信号ビ９クアップ図。
ｌ＠６図は第５図のラジアル方向の断面図。
第７〜１４図は本発明の一実施例の製造工程図。
１・・・・・・基板
２・・・・・・パーマロイ（Ｎｉ −Ｆ’ｇｌ系の抵抗
ハターン３・・・・・・絶縁層
４・・・・・・保膿膜
５・・・・・・端子部
６・・・・・・積層部
７・・・・・・ＭＲ素子
８・・・・・・ＦＧ磁石
９・・・・・・ＭＲ素子の抵抗パターン以 上
出門人 株式会社 −訪精工舎
７１図
第４口
第５図
７７１ｇ
牙３図
オ９閃
７１Ｏｆ！］
才＋１［ｐ
７１２図
７１５図
第１４０FIG. 1 is an outline drawing of an embodiment of the present invention. Figure 2 is il! The resistance pattern diagram in Figure 1. FIG. 3 is a sectional view of the resistor pattern portion A1-12 in FIG. 1. FIG. 4 is a resistance pattern diagram of a conventional MR element. FIG. 5 is a PG double signal backup diagram. Figure l@6 is a radial cross-sectional view of Figure 5. 7 to 14 are manufacturing process diagrams of an embodiment of the present invention. 1...Substrate 2...Permalloy (Ni-F'gl based resistor pattern 3...Insulating layer 4...Pulsual membrane 5... ...Terminal part 6...Lamination part 7...MR element 8...FG magnet 9...Resistance pattern of MR element or more Apprentice Co., Ltd. - Waseikosha 71 Figure 4 Mouth 5 Figure 771g Fang 3 Figure O 9 Sen 71 Of!] Sai +1 [p 712 Figure 715 Figure 140
Claims (1)
ンと絶縁層を交互に複数層積層するとともに該強磁性薄
膜パターンは電気的に導通されることを特徴とする磁気
抵抗効果ヘッド。A magnetoresistive head characterized in that a plurality of ferromagnetic thin film patterns having an anisotropic magnetoresistive effect and insulating layers are alternately laminated on a substrate, and the ferromagnetic thin film patterns are electrically conductive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6476085A JPS61222013A (en) | 1985-03-28 | 1985-03-28 | Magneto-resistance effect head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6476085A JPS61222013A (en) | 1985-03-28 | 1985-03-28 | Magneto-resistance effect head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61222013A true JPS61222013A (en) | 1986-10-02 |
Family
ID=13267454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6476085A Pending JPS61222013A (en) | 1985-03-28 | 1985-03-28 | Magneto-resistance effect head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61222013A (en) |
-
1985
- 1985-03-28 JP JP6476085A patent/JPS61222013A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4195323A (en) | Thin film magnetic recording heads | |
| JP3210192B2 (en) | Magnetic sensing element | |
| US4321641A (en) | Thin film magnetic recording heads | |
| US4489484A (en) | Method of making thin film magnetic recording heads | |
| EP0910802A2 (en) | Magnetic field sensor comprising a wheatstone bridge | |
| JPH05275769A (en) | Magnetic field sensor | |
| US6424508B1 (en) | Magnetic tunnel junction magnetoresistive head | |
| JPS59147213A (en) | magnetic rotation sensor | |
| JPS61222013A (en) | Magneto-resistance effect head | |
| JP2702210B2 (en) | Magnetic head | |
| KR920001129B1 (en) | Magnetoresistance type magnetic head | |
| JPH09113590A (en) | Magnetic sensor | |
| JPS5931771B2 (en) | thin film magnetoresistive head | |
| JPS58166527A (en) | Magnetoresistance effect head | |
| JP2529951B2 (en) | Magnetoresistive sensor for magnetic encoder | |
| JPS61145720A (en) | Magnetic head | |
| JPH08285930A (en) | Magnetism detection element and magnetic head | |
| JP2878738B2 (en) | Recording / reproducing thin film magnetic head | |
| JPH0140510B2 (en) | ||
| JPH04255276A (en) | magnetoresistive element | |
| JPH08316547A (en) | Magneto-detecting element and manufacture thereof | |
| JPS5821328B2 (en) | Tasoshijiki head | |
| JPH04123307A (en) | Magneto-resistance effect type head | |
| JPH08249617A (en) | Spin valve Magnetoresistive element | |
| JPS62259486A (en) | Magnetic sensor |