JPS61224123A - Magnetic recording medium - Google Patents
Magnetic recording mediumInfo
- Publication number
- JPS61224123A JPS61224123A JP6553485A JP6553485A JPS61224123A JP S61224123 A JPS61224123 A JP S61224123A JP 6553485 A JP6553485 A JP 6553485A JP 6553485 A JP6553485 A JP 6553485A JP S61224123 A JPS61224123 A JP S61224123A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- atomic
- alloy
- magnetic thin
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 29
- 239000000956 alloy Substances 0.000 claims abstract description 29
- 239000010409 thin film Substances 0.000 claims abstract description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 16
- 229910017052 cobalt Inorganic materials 0.000 claims description 14
- 239000010941 cobalt Substances 0.000 claims description 14
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910000531 Co alloy Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 230000007797 corrosion Effects 0.000 abstract description 15
- 238000005260 corrosion Methods 0.000 abstract description 15
- 239000010408 film Substances 0.000 abstract description 14
- 239000000654 additive Substances 0.000 abstract description 4
- 230000005415 magnetization Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 229910018104 Ni-P Inorganic materials 0.000 description 3
- 229910018536 Ni—P Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001096 P alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- WPUMTJGUQUYPIV-JIZZDEOASA-L disodium (S)-malate Chemical compound [Na+].[Na+].[O-]C(=O)[C@@H](O)CC([O-])=O WPUMTJGUQUYPIV-JIZZDEOASA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 235000019265 sodium DL-malate Nutrition 0.000 description 1
- 239000001394 sodium malate Substances 0.000 description 1
- PRWXGRGLHYDWPS-UHFFFAOYSA-L sodium malonate Chemical compound [Na+].[Na+].[O-]C(=O)CC([O-])=O PRWXGRGLHYDWPS-UHFFFAOYSA-L 0.000 description 1
- 229940074404 sodium succinate Drugs 0.000 description 1
- ZDQYSKICYIVCPN-UHFFFAOYSA-L sodium succinate (anhydrous) Chemical compound [Na+].[Na+].[O-]C(=O)CCC([O-])=O ZDQYSKICYIVCPN-UHFFFAOYSA-L 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は合金磁性薄膜を有する磁気記録媒体に係り、特
にこの合金磁性薄膜がアルミニウム若しくはシリコン、
又は銅のうちのいずれか1種以上を含有するコバルト基
合金からなる磁気記録媒体に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a magnetic recording medium having an alloy magnetic thin film, and in particular, the alloy magnetic thin film is made of aluminum, silicon,
The present invention also relates to a magnetic recording medium made of a cobalt-based alloy containing at least one of copper.
[従来の技術]
記録密度の高い合金磁性薄膜を有する磁気記録媒体の研
、究開発が近年大いに推進されているが、その一つとし
て無電解メッキ法によるコバルト(CO)−ニッケル(
Ni)−リン(P)合金磁性薄膜を用いたものがある。[Prior Art] Research and development of magnetic recording media having alloy magnetic thin films with high recording density has been greatly promoted in recent years, and one of them is cobalt (CO)-nickel (cobalt (CO))-nickel (
There is one using a Ni)-phosphorus (P) alloy magnetic thin film.
しかしながらCo −N1−P合金は耐食性に問題があ
り、該合金磁性薄膜を用いた記録媒体は、永年使用した
際の記録エラー等信頼性の点で劣っていた。例えば、該
合金磁性薄膜を温度57℃、湿度85%の条件下にて2
週間放置した場合には飽和磁化の劣化が30%であり、
また、純水中に1週間放置した場合のそれは40%にも
達する。このような特性の劣化は実機使用した際の出力
低下を招き、また腐蝕部の存在はエラーの増大を引き起
こすという問題がある。However, the Co-N1-P alloy has a problem in corrosion resistance, and recording media using the alloy magnetic thin film are inferior in reliability such as recording errors when used for many years. For example, the alloy magnetic thin film was heated for 2 hours at a temperature of 57°C and a humidity of 85%.
When left for a week, the saturation magnetization deteriorates by 30%.
Furthermore, when left in pure water for one week, the rate reaches 40%. Such deterioration of characteristics causes a decrease in output when used in actual equipment, and the presence of corroded parts causes an increase in errors.
[発明が解決しようとする問題点]
このように、無電解メッキ法によるCo −Ni−P合
金磁性薄膜は、出力低下やエラーの増大などといった信
頼性の低下に帰結する耐食性・耐候性の問題があった。[Problems to be Solved by the Invention] As described above, the Co-Ni-P alloy magnetic thin film produced by electroless plating has problems in corrosion resistance and weather resistance, which result in a decrease in reliability such as a decrease in output and an increase in errors. was there.
[問題点を解決するための手段]
本発明者らは、上記不具合を解決するために様々な観点
から検討を加え、2〜12原子%のアルミニウム(AI
)若しくはシリコン(Si)、又は2〜8原子%の銅(
C1)のうちのいずれか1種以上を添加したCo基合金
磁性薄膜が極めて優れた耐食性・#4候性を有すること
を見い出した。[Means for Solving the Problems] In order to solve the above-mentioned problems, the present inventors conducted studies from various viewpoints, and found that 2 to 12 atomic % aluminum (AI
) or silicon (Si), or 2 to 8 atomic percent copper (
It has been found that a Co-based alloy magnetic thin film containing one or more of C1) has extremely excellent corrosion resistance and #4 weatherability.
即ち、本発明は、基板上に形成された合金磁性薄膜を有
する磁気記録媒体において、上記合金磁性薄膜を2〜1
2原子%のA1若しくはSi、又は2〜8原子%のCO
のうちのいずれか1種以上と、0.2〜5原子%の窒素
とを含有するCo基合金で構成したことを特徴とするも
のである。That is, the present invention provides a magnetic recording medium having an alloy magnetic thin film formed on a substrate.
2 atomic % A1 or Si, or 2 to 8 atomic % CO
It is characterized by being made of a Co-based alloy containing one or more of the above and 0.2 to 5 atomic % of nitrogen.
以下本発明の構成について更に詳細に説明する。The configuration of the present invention will be explained in more detail below.
本発明において用いられる磁性薄膜は、2〜12原子%
のA1若しくはSi、又は2〜8原子%のCOのうちの
いずれか1種以上とNを0.5〜5原子%含むCo基合
金からなるものである。The magnetic thin film used in the present invention has a content of 2 to 12 atomic %.
It is made of a Co-based alloy containing any one or more of Al or Si, or 2 to 8 atomic % of CO, and 0.5 to 5 atomic % of N.
A1またはSlの含有量を2〜12原子%とし、Cuの
含有量を2〜8原子%とした理由は、これら添加物の含
有量が2原子%未満では耐食性が低下するようになるか
らである。一方、Cuの場合は8原子%、AIまたはS
iの場合には12原子%を越えるときは飽和磁化が低く
なりすぎ、薄層化という高密度記録に適った合金磁性薄
膜の特長が活かし得ないためである。The reason why the A1 or Sl content was set to 2 to 12 at % and the Cu content was set to 2 to 8 at % is that if the content of these additives is less than 2 at %, the corrosion resistance will decrease. be. On the other hand, in the case of Cu, it is 8 at%, AI or S
This is because, in the case of i, when it exceeds 12 atom %, the saturation magnetization becomes too low, and the advantage of the alloy magnetic thin film, which is suitable for high-density recording, such as thin layer formation, cannot be utilized.
また、Nを0.2〜5原子%とした理由は、主として1
造上の関係によるものであり、例えば、後述する本発明
に係る製造法では0.2原子%以上のNが残存してしま
うためである。一方、5原子%を越えるようになると磁
気特性のうち角型比Sと称されているものが低下するよ
うになるからである。通常、磁気記録媒体の角型比Sは
0.1以上であることが要求されているが、本発明にお
いて、特に好ましいNの含有量は0.2〜3原子%であ
る。In addition, the reason why N was set at 0.2 to 5 at% was mainly due to 1
This is due to a structural relationship, and for example, in the manufacturing method according to the present invention described later, N of 0.2 atomic % or more remains. On the other hand, if the content exceeds 5 at %, the so-called squareness ratio S of the magnetic properties will decrease. Normally, the squareness ratio S of a magnetic recording medium is required to be 0.1 or more, but in the present invention, a particularly preferable N content is 0.2 to 3 atomic %.
本発明において、AI 、Si 、Cu及びN以外の組
成としては、
(イ)Coのみ
(ロ)Coの一部をNi及び/又はl”eで置換したも
の
であってもよい。(ロ)の組成の場合、COの一部をN
i及び/又はFeで置換するときの置換比率はCOの2
5原子%以下とするのが好ましい。置換比率が25原子
%を越えるとhcp母結晶中にfcc相が出現し、膜面
内の磁気特性の低下をもたらす。In the present invention, the composition other than AI, Si, Cu, and N may be (a) only Co (b) a part of Co replaced with Ni and/or l"e. (b) In the case of composition, some of the CO is replaced by N
The substitution ratio when replacing with i and/or Fe is 2 of CO
The content is preferably 5 at % or less. When the substitution ratio exceeds 25 atomic %, an fcc phase appears in the hcp host crystal, resulting in a decrease in the in-plane magnetic properties of the film.
また、l”e置換の場合には、その置換比率が25原子
%を越えると薄膜の耐食性、耐候性も低下させるように
なる。Furthermore, in the case of l''e substitution, if the substitution ratio exceeds 25 atomic %, the corrosion resistance and weather resistance of the thin film will also be reduced.
本発明の磁気記録媒体は、例えば次のようにして製造す
ることができる。即ち、N2を含むArガス雰囲気中で
スパッタリング等の真空蒸着法によってAI 、s+
、またはCDのうちの1種以上と、CO及びN(及び所
望により、更にNi及び/又はFe)を含む合金薄膜を
基板上に形成し、然る後熱処理し、Nを放出させてN含
有率を0.2〜5原子%とするものである。The magnetic recording medium of the present invention can be manufactured, for example, as follows. That is, AI, s+
, or CD, and an alloy thin film containing CO and N (and optionally further Ni and/or Fe) is formed on a substrate, and then heat-treated to release N and reduce the N content. The ratio is set to 0.2 to 5 at%.
この製造方法において、基板上にまず形成される薄膜は
アモルファス状又は粒径50〜100A程度の微結晶体
より成り、後工程の熱処理で結晶化又は粒径100〜4
00A程度の結晶粒に成長し、適度なHCを有しかつ高
角形比の磁気記録媒体を形成するようになる。In this manufacturing method, the thin film that is first formed on the substrate is amorphous or microcrystalline with a grain size of about 50 to 100 A, and is crystallized or crystallized by heat treatment in a later step.
The crystal grains grow to about 00A, forming a magnetic recording medium having an appropriate HC and a high squareness ratio.
この熱処理の温度としては280℃以上が好ましく、熱
処理の温度が280℃を下回る場合は脱Nの活性点にな
っておらず脱Nが進行しない。また、熱処理温度があま
り高温の場合には結晶粒が異常成長し保磁力HCの低下
を招く。従って好ましい熱処理温度は280〜500℃
である。The temperature of this heat treatment is preferably 280° C. or higher, and if the temperature of the heat treatment is lower than 280° C., the active sites for deNization are not activated and deNization does not proceed. Furthermore, if the heat treatment temperature is too high, crystal grains will grow abnormally, leading to a decrease in coercive force HC. Therefore, the preferred heat treatment temperature is 280-500℃
It is.
また、本発明において用いられる基板としては、非磁性
基板であるならば従来から用いられている各種のものが
採用でき、合金系基板(例えばA1に数%以下程度のマ
グネシウムを添加した合金やチタン合金の基板)、各種
のセラミックス、又はガラス基板などが用いられる。ま
た、基板と磁性薄膜との間にクロムやチタンあるいはア
ルマイト、N1−P等から成る硬質な下地層の他、磁性
薄膜の付着強度を増大させる各種の非磁性中間層などを
設けてもよい。また、磁性fill上に非磁性金属中間
層及び/又は炭素、ポリ珪酸等の保護膜を設けてもよい
。さらに、この保護膜上に潤滑剤を塗布しても良い。In addition, as the substrate used in the present invention, various conventionally used non-magnetic substrates can be used, and alloy-based substrates (for example, alloys made of A1 with a few percent or less of magnesium added, titanium alloy substrates), various ceramics, or glass substrates. Further, in addition to a hard underlayer made of chromium, titanium, alumite, N1-P, etc., various nonmagnetic intermediate layers for increasing the adhesion strength of the magnetic thin film may be provided between the substrate and the magnetic thin film. Further, a nonmagnetic metal intermediate layer and/or a protective film made of carbon, polysilicate, etc. may be provided on the magnetic fill. Furthermore, a lubricant may be applied onto this protective film.
[作用]
2〜12原子%のA1若しくはSi、又は2〜8原子%
のCuのうちのいずれか1種以上を含有し、N含有量が
0.2〜5原子%であるCO基合金磁性薄膜は適当な磁
気特性を有し、後述の実施例などに示す如く耐食性・耐
候性に優れる。[Action] 2 to 12 atom% of A1 or Si, or 2 to 8 atom%
A CO-based alloy magnetic thin film containing any one or more of Cu and having an N content of 0.2 to 5 at% has appropriate magnetic properties, and has good corrosion resistance as shown in the examples below.・Excellent weather resistance.
[実施例1 以下、本発明を具体的実施例によって詳細に説明する。[Example 1 Hereinafter, the present invention will be explained in detail using specific examples.
なお、以下に述べる実施例は、r、(マグネトロンスパ
ッタ装置によったが、イオン工学的に同様のことが言え
るイオンビームスパッタリング等によっても本発明の効
果を得ることが可能であることは勿論である。In addition, although the embodiment described below uses a magnetron sputtering device, it goes without saying that the effects of the present invention can also be obtained by ion beam sputtering, etc., which can be said to be similar in terms of ion technology. be.
実施例1
r、f、プレーナーマグネトロンスパッタ装置を用い、
下記条件にて、ガラス基板上に様々な組成のGo基合金
磁性1膜を形成した。Example 1 Using r, f, planar magnetron sputtering equipment,
Go-based alloy magnetic films having various compositions were formed on glass substrates under the following conditions.
初期排気 1〜2x10−’ Torr全雰囲気
圧(Ar+N2) 10〜20mTorr(全圧に対
するN2分圧の%)50〜80%投入電力
1 kW
ターゲット組成 CO
(目標とするH膜の組成に一致させる場合は、各添加物
のチップを適当にターゲット上に配置させることにより
行なう。)
極間隔 108mm
躾厚くスパッタ時) 700A薄膜形成速度
250〜500A / glin基板温度
200℃
スパッタ膜形成後、10″″’Torr以下の真空中に
て300〜b
膜を結晶化させるとともに、膜中に含有された窒素を放
出させた。その後耐食性及び耐候性の検討を行なった。Initial exhaust 1~2x10-' TorrTotal atmospheric pressure (Ar+N2) 10~20mTorr (% of N2 partial pressure to total pressure) 50~80% input power
1 kW Target composition CO (When matching the composition of the target H film, do so by appropriately placing chips of each additive on the target.) Pole spacing 108 mm (during thick sputtering) 700 A thin film formation speed 250 ~500A/glin substrate temperature
After forming the sputtered film at 200° C., the 300° C.-b film was crystallized in a vacuum of 10″’ Torr or less, and the nitrogen contained in the film was released. Afterwards, we investigated corrosion resistance and weather resistance.
ここに、耐蝕性の評価は3MΩ・Cl1lの純水中に1
週間浸すことにより、また耐候性の評価は温度57℃、
湿度80%の条件下に2週間放置することにより行なっ
た。Here, the corrosion resistance evaluation is as follows:
By soaking for a week, the weather resistance was evaluated at a temperature of 57℃.
The test was carried out by leaving it for two weeks under the condition of 80% humidity.
この結果を、第1表に示、す。The results are shown in Table 1.
比較例1
下記条件により、適宜に表面処理されたガラス基板上に
Co −Ni−P合金磁性膜を作成し、その後耐食性、
耐候性の評価を行なった。その結果を第1表に示す。Comparative Example 1 A Co-Ni-P alloy magnetic film was created on an appropriately surface-treated glass substrate under the following conditions, and then corrosion resistance,
Weather resistance was evaluated. The results are shown in Table 1.
メッキ浴 硫酸コバルト 0.06 mol /
l硫酸ニッケル 0.04
次亜リン酸 0.2
硫酸アンモニウム 0.1
マロン酸ナトリウム 0.3
リンゴ酸ナトリウム 0.4
コハク酸ナトリウム 0.5
pH−8,9〜9.3 温度75〜85℃ 膜厚70
0A比較例2
スパッタリング時の雰囲気をAr 100%としたこ
と以外は実施例1と同様にして、N含有率0%の1ll
liを作成した。また、残存N1度が5原子%を越える
場合、 Ni 111度が25原子%を越える場合、及
び規定量を越える量の添加物を含む場合の合金薄膜も同
様に実施例1の条件下で作成した。Plating bath Cobalt sulfate 0.06 mol /
lNickel sulfate 0.04 Hypophosphorous acid 0.2 Ammonium sulfate 0.1 Sodium malonate 0.3 Sodium malate 0.4 Sodium succinate 0.5 pH-8.9-9.3 Temperature 75-85°C Membrane Thickness 70
0A Comparative Example 2 1ll with 0% N content was prepared in the same manner as in Example 1 except that the atmosphere during sputtering was 100% Ar.
I created li. In addition, alloy thin films in cases where residual N1 degree exceeds 5 at%, Ni111 degree exceeds 25 at%, and when additives exceeding the specified amount are contained are similarly prepared under the conditions of Example 1. did.
その磁気特性を第1表に示す。Its magnetic properties are shown in Table 1.
第1表より、本発明によるAI 、 st 、またはC
uを含むCam合金磁性薄膜は、従来のCo −Ni−
P無電解メッキ磁性薄膜に比較し、遥かに優れた耐食性
・耐候性を示すことが認められる。From Table 1, it can be seen that AI, st, or C according to the present invention
The Cam alloy magnetic thin film containing u is similar to the conventional Co-Ni-
It is recognized that it exhibits far superior corrosion resistance and weather resistance compared to P electroless plated magnetic thin film.
また、磁気記録媒体としての特性を満足するためには、
アルゴンと窒素の混合雰囲気下で膜が形成されなければ
ならないことも認められる。In addition, in order to satisfy the characteristics as a magnetic recording medium,
It is also recognized that the film must be formed under a mixed atmosphere of argon and nitrogen.
実施例2
表面研磨されたアルミ合金上にアルマイト処理を施して
成る基板上に、第2表に示すような所望の組成となるよ
うに、実施例1に記したと同様の条件下にて51/4“
φディスクを作成し、真空中350℃x ahr熱処理
を施した後、r、f、プレーナーマグネトロン装置にて
400Aのアモルファス状カーボン膜を形成した。Example 2 On a substrate made of a surface-polished aluminum alloy subjected to alumite treatment, 51% was applied under the same conditions as described in Example 1 so as to obtain the desired composition as shown in Table 2. /4“
After a φ disk was prepared and subjected to heat treatment at 350° C. x Ahr in vacuum, an amorphous carbon film of 400 A was formed using an R, F, planar magnetron device.
次に、これらのディスクを用い耐食性、耐候性の評価を
行なった。その結果を第2表に示す。なお、磁気記録媒
体の電磁変換特性の評価は、下記の如き条件で行なった
。Next, corrosion resistance and weather resistance were evaluated using these disks. The results are shown in Table 2. The electromagnetic conversion characteristics of the magnetic recording medium were evaluated under the following conditions.
使用ヘッド Mn−Znフェライトヘッド(トラック幅
16μ11ギヤツプ長1.1μ11ギャップ深さ20μ
曙、巻数19Tx 2)浮上l0034μm
書き込み周波数 1 F : 1.25 MH22F
; 2.5 MHz
ディスク回転数 3600rpm
測定箇所 ディスク中心よりの距離R−30nui比較
例3
表面研磨されたアルミニウム合金上にNi −Pメッキ
下地層が施された5 1/4“φディスク基板上に、比
較例1と同様の条件下でco −Jli −P合金磁性
膜を形成し、その後実施例2と同様に400Aのアモル
ファス状カーボン膜を形成した。Head used: Mn-Zn ferrite head (track width 16μ11 gap length 1.1μ11 gap depth 20μ
Akebono, number of turns 19Tx 2) Levitation l0034μm Writing frequency 1F: 1.25 MH22F
; 2.5 MHz Disc rotation speed 3600 rpm Measurement point Distance from the center of the disk R-30nui Comparative Example 3 On a 5 1/4"φ disk substrate with a Ni-P plating base layer on a surface-polished aluminum alloy. A co-Jli-P alloy magnetic film was formed under the same conditions as in Comparative Example 1, and then a 400A amorphous carbon film was formed in the same manner as in Example 2.
次に、これらを耐食性及び耐候性の評価に用いた。Next, these were used for evaluation of corrosion resistance and weather resistance.
その結果を第2表に示す。電磁変換路特性の評価は実施
例2と全く同様の条件下で行なった。The results are shown in Table 2. The electromagnetic conversion path characteristics were evaluated under exactly the same conditions as in Example 2.
以上のことから、本発明における磁気記録媒体は耐食性
・耐候性に優れた媒体であることが証明された。From the above, it was proven that the magnetic recording medium of the present invention has excellent corrosion resistance and weather resistance.
Claims (4)
録体において、該合金磁性薄膜が2〜12原子%のアル
ミニウム若しくはシリコン、又は2〜8原子%の銅のう
ちのいずれか1種以上を含むコバルト基合金からなるこ
とを特徴とする磁気記録媒体。(1) In a magnetic recording body having an alloy magnetic thin film formed on a substrate, the alloy magnetic thin film is made of one or more of 2 to 12 atomic % aluminum or silicon, or 2 to 8 atomic % copper. A magnetic recording medium comprising a cobalt-based alloy containing.
れ、かつ熱処理されて形成されたものであることを特徴
とする特許請求の範囲第1項記載の磁気記録媒体。(2) The magnetic recording medium according to claim 1, wherein the alloy magnetic thin film is formed by sputtering and heat-treating the substrate.
ウム若しくはシリコン、又は2〜8原子%の銅のうちの
いずれか1種以上と、窒素を0.2〜5原子%含み、残
部コバルトからなることを特徴とする特許請求の範囲第
1項又は第2項に記載の磁気記録媒体。(3) The alloy magnetic thin film contains at least one of 2 to 12 atomic % of aluminum or silicon, or 2 to 8 atomic % of copper, and 0.2 to 5 atomic % of nitrogen, with the balance being cobalt. A magnetic recording medium according to claim 1 or 2, characterized in that the magnetic recording medium comprises:
ウム若しくはシリコン、又は2〜8原子%の銅のうちの
いずれか1種以上と、窒素を0.2〜5原子%含み、残
部がコバルトとニッケル及び/又は鉄とから成り、ニッ
ケル及び/又は鉄の含有量は、コバルトの25原子%以
下を置換した量であることを特徴とする特許請求の範囲
第1項又は第2項に記載の磁気記録媒体。(4) The alloy magnetic thin film contains at least one of 2 to 12 atomic % of aluminum or silicon, or 2 to 8 atomic % of copper, and 0.2 to 5 atomic % of nitrogen, with the balance being Claims 1 or 2 consist of cobalt and nickel and/or iron, and the content of nickel and/or iron is an amount that replaces 25 atomic percent or less of cobalt. The magnetic recording medium described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6553485A JPS61224123A (en) | 1985-03-29 | 1985-03-29 | Magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6553485A JPS61224123A (en) | 1985-03-29 | 1985-03-29 | Magnetic recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61224123A true JPS61224123A (en) | 1986-10-04 |
Family
ID=13289776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6553485A Pending JPS61224123A (en) | 1985-03-29 | 1985-03-29 | Magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61224123A (en) |
-
1985
- 1985-03-29 JP JP6553485A patent/JPS61224123A/en active Pending
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