JPS61231746A - 誘導性負荷を制御するための集積電子素子およびその使用法 - Google Patents

誘導性負荷を制御するための集積電子素子およびその使用法

Info

Publication number
JPS61231746A
JPS61231746A JP61075374A JP7537486A JPS61231746A JP S61231746 A JPS61231746 A JP S61231746A JP 61075374 A JP61075374 A JP 61075374A JP 7537486 A JP7537486 A JP 7537486A JP S61231746 A JPS61231746 A JP S61231746A
Authority
JP
Japan
Prior art keywords
layer
collector
type
controlling
buried layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61075374A
Other languages
English (en)
Japanese (ja)
Inventor
ピエトロ・エツラテイーコ
ピエトロ・メンニテイ
フアビーオ・マルキーオ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Microelettronica SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Microelettronica SpA filed Critical SGS Microelettronica SpA
Publication of JPS61231746A publication Critical patent/JPS61231746A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Bipolar Transistors (AREA)
JP61075374A 1985-04-01 1986-03-31 誘導性負荷を制御するための集積電子素子およびその使用法 Pending JPS61231746A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT20174A/85 1985-04-01
IT20174/85A IT1221019B (it) 1985-04-01 1985-04-01 Dispositivo elettronico integrato per il comando di carichi induttivi,con elemento di ricircolo

Publications (1)

Publication Number Publication Date
JPS61231746A true JPS61231746A (ja) 1986-10-16

Family

ID=11164418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61075374A Pending JPS61231746A (ja) 1985-04-01 1986-03-31 誘導性負荷を制御するための集積電子素子およびその使用法

Country Status (4)

Country Link
JP (1) JPS61231746A (it)
DE (1) DE3609629A1 (it)
FR (1) FR2579830B1 (it)
IT (1) IT1221019B (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4894622A (en) * 1988-06-15 1990-01-16 U.S. Philips Corporation Integrated current-mirror arrangement comprising vertical transistors
DE3908055C1 (it) * 1989-03-13 1990-09-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt, De
DE3911431A1 (de) * 1989-04-07 1990-10-11 Siemens Ag Integrierbare freilaufschaltung
US5055888A (en) * 1989-06-21 1991-10-08 Texas Instrumenets Incorporated Zener diodes in a linear semiconductor device
US4979001A (en) * 1989-06-30 1990-12-18 Micrel Incorporated Hidden zener diode structure in configurable integrated circuit
DE4332995C1 (de) * 1993-09-28 1994-10-20 Siemens Ag Verfahren zur Ansteuerung von parallel angeordneten Relais
DE4344126A1 (de) * 1993-12-23 1995-07-06 Licentia Gmbh Elektronische Schützschnellabschaltung
DE10006519B4 (de) * 2000-02-15 2004-03-11 Infineon Technologies Ag MOSFET-Treibertransistor und Verfahren zum Herstellen desselben
DE10052170C2 (de) * 2000-10-20 2002-10-31 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterbauelement
US7211846B2 (en) 2000-10-20 2007-05-01 Infineon Technologies Ag Transistor having compensation zones enabling a low on-resistance and a high reverse voltage

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB992540A (en) * 1961-01-17 1965-05-19 Ass Elect Ind Relay circuit
SE361555B (it) * 1969-06-10 1973-11-05 Rca Corp
DE2053776A1 (de) * 1970-11-02 1972-05-10 Licentia Gmbh Integrierte Halbleiteranordnung
DE2206353A1 (de) * 1971-02-11 1972-10-26 Motorola Inc., Franklin Park, 111. (V.StA.) Integrierter Transistor und Emitter-Kollektor-Diode
DD106119A1 (it) * 1973-07-09 1974-05-20
US3901735A (en) * 1973-09-10 1975-08-26 Nat Semiconductor Corp Integrated circuit device and method utilizing ion implanted and up diffusion for isolated region
JPS5730359A (en) * 1980-07-30 1982-02-18 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
IT8520174A0 (it) 1985-04-01
DE3609629A1 (de) 1986-10-02
FR2579830A1 (fr) 1986-10-03
IT1221019B (it) 1990-06-21
FR2579830B1 (fr) 1990-07-20

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