IT1221019B - Dispositivo elettronico integrato per il comando di carichi induttivi,con elemento di ricircolo - Google Patents
Dispositivo elettronico integrato per il comando di carichi induttivi,con elemento di ricircoloInfo
- Publication number
- IT1221019B IT1221019B IT20174/85A IT2017485A IT1221019B IT 1221019 B IT1221019 B IT 1221019B IT 20174/85 A IT20174/85 A IT 20174/85A IT 2017485 A IT2017485 A IT 2017485A IT 1221019 B IT1221019 B IT 1221019B
- Authority
- IT
- Italy
- Prior art keywords
- electronic device
- control
- integrated electronic
- inductive loads
- recirculation element
- Prior art date
Links
- 230000001939 inductive effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT20174/85A IT1221019B (it) | 1985-04-01 | 1985-04-01 | Dispositivo elettronico integrato per il comando di carichi induttivi,con elemento di ricircolo |
| DE19863609629 DE3609629A1 (de) | 1985-04-01 | 1986-03-21 | Integrierte elektronische schaltung zum ansteuern von induktiven lasten |
| FR868604199A FR2579830B1 (fr) | 1985-04-01 | 1986-03-24 | Dispositif electronique integre pour commander des charges inductives |
| JP61075374A JPS61231746A (ja) | 1985-04-01 | 1986-03-31 | 誘導性負荷を制御するための集積電子素子およびその使用法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT20174/85A IT1221019B (it) | 1985-04-01 | 1985-04-01 | Dispositivo elettronico integrato per il comando di carichi induttivi,con elemento di ricircolo |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8520174A0 IT8520174A0 (it) | 1985-04-01 |
| IT1221019B true IT1221019B (it) | 1990-06-21 |
Family
ID=11164418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT20174/85A IT1221019B (it) | 1985-04-01 | 1985-04-01 | Dispositivo elettronico integrato per il comando di carichi induttivi,con elemento di ricircolo |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS61231746A (it) |
| DE (1) | DE3609629A1 (it) |
| FR (1) | FR2579830B1 (it) |
| IT (1) | IT1221019B (it) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4894622A (en) * | 1988-06-15 | 1990-01-16 | U.S. Philips Corporation | Integrated current-mirror arrangement comprising vertical transistors |
| DE3908055C1 (it) * | 1989-03-13 | 1990-09-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt, De | |
| DE3911431A1 (de) * | 1989-04-07 | 1990-10-11 | Siemens Ag | Integrierbare freilaufschaltung |
| US5055888A (en) * | 1989-06-21 | 1991-10-08 | Texas Instrumenets Incorporated | Zener diodes in a linear semiconductor device |
| US4979001A (en) * | 1989-06-30 | 1990-12-18 | Micrel Incorporated | Hidden zener diode structure in configurable integrated circuit |
| DE4332995C1 (de) * | 1993-09-28 | 1994-10-20 | Siemens Ag | Verfahren zur Ansteuerung von parallel angeordneten Relais |
| DE4344126A1 (de) | 1993-12-23 | 1995-07-06 | Licentia Gmbh | Elektronische Schützschnellabschaltung |
| DE10006519B4 (de) * | 2000-02-15 | 2004-03-11 | Infineon Technologies Ag | MOSFET-Treibertransistor und Verfahren zum Herstellen desselben |
| US7211846B2 (en) | 2000-10-20 | 2007-05-01 | Infineon Technologies Ag | Transistor having compensation zones enabling a low on-resistance and a high reverse voltage |
| DE10052170C2 (de) * | 2000-10-20 | 2002-10-31 | Infineon Technologies Ag | Mittels Feldeffekt steuerbares Halbleiterbauelement |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB992540A (en) * | 1961-01-17 | 1965-05-19 | Ass Elect Ind | Relay circuit |
| SE361555B (it) * | 1969-06-10 | 1973-11-05 | Rca Corp | |
| DE2053776A1 (de) * | 1970-11-02 | 1972-05-10 | Licentia Gmbh | Integrierte Halbleiteranordnung |
| DE2206353A1 (de) * | 1971-02-11 | 1972-10-26 | Motorola Inc., Franklin Park, 111. (V.StA.) | Integrierter Transistor und Emitter-Kollektor-Diode |
| DD106119A1 (it) * | 1973-07-09 | 1974-05-20 | ||
| US3901735A (en) * | 1973-09-10 | 1975-08-26 | Nat Semiconductor Corp | Integrated circuit device and method utilizing ion implanted and up diffusion for isolated region |
| JPS5730359A (en) * | 1980-07-30 | 1982-02-18 | Nec Corp | Semiconductor device |
-
1985
- 1985-04-01 IT IT20174/85A patent/IT1221019B/it active
-
1986
- 1986-03-21 DE DE19863609629 patent/DE3609629A1/de not_active Withdrawn
- 1986-03-24 FR FR868604199A patent/FR2579830B1/fr not_active Expired - Lifetime
- 1986-03-31 JP JP61075374A patent/JPS61231746A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2579830B1 (fr) | 1990-07-20 |
| IT8520174A0 (it) | 1985-04-01 |
| DE3609629A1 (de) | 1986-10-02 |
| JPS61231746A (ja) | 1986-10-16 |
| FR2579830A1 (fr) | 1986-10-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970429 |