IT1221019B - Dispositivo elettronico integrato per il comando di carichi induttivi,con elemento di ricircolo - Google Patents

Dispositivo elettronico integrato per il comando di carichi induttivi,con elemento di ricircolo

Info

Publication number
IT1221019B
IT1221019B IT20174/85A IT2017485A IT1221019B IT 1221019 B IT1221019 B IT 1221019B IT 20174/85 A IT20174/85 A IT 20174/85A IT 2017485 A IT2017485 A IT 2017485A IT 1221019 B IT1221019 B IT 1221019B
Authority
IT
Italy
Prior art keywords
electronic device
control
integrated electronic
inductive loads
recirculation element
Prior art date
Application number
IT20174/85A
Other languages
English (en)
Other versions
IT8520174A0 (it
Inventor
Pietro Erratico
Pietro Menniti
Fabio Marchio
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT20174/85A priority Critical patent/IT1221019B/it
Publication of IT8520174A0 publication Critical patent/IT8520174A0/it
Priority to DE19863609629 priority patent/DE3609629A1/de
Priority to FR868604199A priority patent/FR2579830B1/fr
Priority to JP61075374A priority patent/JPS61231746A/ja
Application granted granted Critical
Publication of IT1221019B publication Critical patent/IT1221019B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617Combinations of vertical BJTs and only diodes
IT20174/85A 1985-04-01 1985-04-01 Dispositivo elettronico integrato per il comando di carichi induttivi,con elemento di ricircolo IT1221019B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT20174/85A IT1221019B (it) 1985-04-01 1985-04-01 Dispositivo elettronico integrato per il comando di carichi induttivi,con elemento di ricircolo
DE19863609629 DE3609629A1 (de) 1985-04-01 1986-03-21 Integrierte elektronische schaltung zum ansteuern von induktiven lasten
FR868604199A FR2579830B1 (fr) 1985-04-01 1986-03-24 Dispositif electronique integre pour commander des charges inductives
JP61075374A JPS61231746A (ja) 1985-04-01 1986-03-31 誘導性負荷を制御するための集積電子素子およびその使用法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT20174/85A IT1221019B (it) 1985-04-01 1985-04-01 Dispositivo elettronico integrato per il comando di carichi induttivi,con elemento di ricircolo

Publications (2)

Publication Number Publication Date
IT8520174A0 IT8520174A0 (it) 1985-04-01
IT1221019B true IT1221019B (it) 1990-06-21

Family

ID=11164418

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20174/85A IT1221019B (it) 1985-04-01 1985-04-01 Dispositivo elettronico integrato per il comando di carichi induttivi,con elemento di ricircolo

Country Status (4)

Country Link
JP (1) JPS61231746A (it)
DE (1) DE3609629A1 (it)
FR (1) FR2579830B1 (it)
IT (1) IT1221019B (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4894622A (en) * 1988-06-15 1990-01-16 U.S. Philips Corporation Integrated current-mirror arrangement comprising vertical transistors
DE3908055C1 (it) * 1989-03-13 1990-09-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt, De
DE3911431A1 (de) * 1989-04-07 1990-10-11 Siemens Ag Integrierbare freilaufschaltung
US5055888A (en) * 1989-06-21 1991-10-08 Texas Instrumenets Incorporated Zener diodes in a linear semiconductor device
US4979001A (en) * 1989-06-30 1990-12-18 Micrel Incorporated Hidden zener diode structure in configurable integrated circuit
DE4332995C1 (de) * 1993-09-28 1994-10-20 Siemens Ag Verfahren zur Ansteuerung von parallel angeordneten Relais
DE4344126A1 (de) 1993-12-23 1995-07-06 Licentia Gmbh Elektronische Schützschnellabschaltung
DE10006519B4 (de) * 2000-02-15 2004-03-11 Infineon Technologies Ag MOSFET-Treibertransistor und Verfahren zum Herstellen desselben
US7211846B2 (en) 2000-10-20 2007-05-01 Infineon Technologies Ag Transistor having compensation zones enabling a low on-resistance and a high reverse voltage
DE10052170C2 (de) * 2000-10-20 2002-10-31 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterbauelement

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB992540A (en) * 1961-01-17 1965-05-19 Ass Elect Ind Relay circuit
SE361555B (it) * 1969-06-10 1973-11-05 Rca Corp
DE2053776A1 (de) * 1970-11-02 1972-05-10 Licentia Gmbh Integrierte Halbleiteranordnung
DE2206353A1 (de) * 1971-02-11 1972-10-26 Motorola Inc., Franklin Park, 111. (V.StA.) Integrierter Transistor und Emitter-Kollektor-Diode
DD106119A1 (it) * 1973-07-09 1974-05-20
US3901735A (en) * 1973-09-10 1975-08-26 Nat Semiconductor Corp Integrated circuit device and method utilizing ion implanted and up diffusion for isolated region
JPS5730359A (en) * 1980-07-30 1982-02-18 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
FR2579830B1 (fr) 1990-07-20
IT8520174A0 (it) 1985-04-01
DE3609629A1 (de) 1986-10-02
JPS61231746A (ja) 1986-10-16
FR2579830A1 (fr) 1986-10-03

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Effective date: 19970429