JPS61236678A - 半導体単結晶層の製造方法及び電子ビ−ムアニ−ル装置 - Google Patents

半導体単結晶層の製造方法及び電子ビ−ムアニ−ル装置

Info

Publication number
JPS61236678A
JPS61236678A JP60074374A JP7437485A JPS61236678A JP S61236678 A JPS61236678 A JP S61236678A JP 60074374 A JP60074374 A JP 60074374A JP 7437485 A JP7437485 A JP 7437485A JP S61236678 A JPS61236678 A JP S61236678A
Authority
JP
Japan
Prior art keywords
electron beam
single crystal
crystal layer
waveform
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60074374A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0440320B2 (cs
Inventor
Tomoyasu Inoue
井上　知泰
Hiroyuki Tango
丹呉　浩侑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60074374A priority Critical patent/JPS61236678A/ja
Priority to US06/762,374 priority patent/US4662949A/en
Priority to US06/904,942 priority patent/US4746803A/en
Publication of JPS61236678A publication Critical patent/JPS61236678A/ja
Publication of JPH0440320B2 publication Critical patent/JPH0440320B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP60074374A 1985-02-15 1985-04-10 半導体単結晶層の製造方法及び電子ビ−ムアニ−ル装置 Granted JPS61236678A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60074374A JPS61236678A (ja) 1985-04-10 1985-04-10 半導体単結晶層の製造方法及び電子ビ−ムアニ−ル装置
US06/762,374 US4662949A (en) 1985-02-15 1985-08-05 Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam
US06/904,942 US4746803A (en) 1985-02-15 1986-09-08 Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60074374A JPS61236678A (ja) 1985-04-10 1985-04-10 半導体単結晶層の製造方法及び電子ビ−ムアニ−ル装置

Publications (2)

Publication Number Publication Date
JPS61236678A true JPS61236678A (ja) 1986-10-21
JPH0440320B2 JPH0440320B2 (cs) 1992-07-02

Family

ID=13545329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60074374A Granted JPS61236678A (ja) 1985-02-15 1985-04-10 半導体単結晶層の製造方法及び電子ビ−ムアニ−ル装置

Country Status (1)

Country Link
JP (1) JPS61236678A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6583142B2 (ja) * 2016-05-25 2019-10-02 株式会社Sumco シリコン単結晶の製造方法及び装置

Also Published As

Publication number Publication date
JPH0440320B2 (cs) 1992-07-02

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term