JPS6123678B2 - - Google Patents

Info

Publication number: JPS6123678B2
Authority: JP; Japan
Prior art keywords: layer; amorphous semiconductor; conductive layer; active; manufacturing
Prior art date: 1976-09-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP52116544A

Other languages

English (en)

Japanese (ja)

Other versions

JPS5342573A (en

Inventor

Kumurudojian Pieeru

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

KOMITSUSARIA TA RENERUGII ATOMIIKU

Original Assignee

KOMITSUSARIA TA RENERUGII ATOMIIKU

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1976-09-28

Filing date

1977-09-28

Publication date

1986-06-06

1976-09-28 Priority claimed from FR7629105A external-priority patent/FR2365888A1/fr

1977-04-27 Priority claimed from FR7712750A external-priority patent/FR2389239A2/fr

1977-09-28 Application filed by KOMITSUSARIA TA RENERUGII ATOMIIKU filed Critical KOMITSUSARIA TA RENERUGII ATOMIIKU

1978-04-18 Publication of JPS5342573A publication Critical patent/JPS5342573A/ja

1986-06-06 Publication of JPS6123678B2 publication Critical patent/JPS6123678B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 claims description 74
238000000034 method Methods 0.000 claims description 54
238000000151 deposition Methods 0.000 claims description 41
239000000463 material Substances 0.000 claims description 38
238000004519 manufacturing process Methods 0.000 claims description 32
230000008021 deposition Effects 0.000 claims description 20
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
229910052799 carbon Inorganic materials 0.000 claims description 17
238000005530 etching Methods 0.000 claims description 17
230000004888 barrier function Effects 0.000 claims description 15
239000000758 substrate Substances 0.000 claims description 13
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
239000000203 mixture Substances 0.000 claims description 8
229910052750 molybdenum Inorganic materials 0.000 claims description 8
239000011733 molybdenum Substances 0.000 claims description 8
229910052785 arsenic Inorganic materials 0.000 claims description 7
238000006243 chemical reaction Methods 0.000 claims description 7
229910052714 tellurium Inorganic materials 0.000 claims description 7
229910052732 germanium Inorganic materials 0.000 claims description 6
239000011810 insulating material Substances 0.000 claims description 6
PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 6
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
229910052717 sulfur Inorganic materials 0.000 claims description 5
239000011593 sulfur Substances 0.000 claims description 5
239000011521 glass Substances 0.000 claims description 3
238000010292 electrical insulation Methods 0.000 claims 1
239000005519 non-carbonaceous material Substances 0.000 claims 1
238000011109 contamination Methods 0.000 description 14
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 9
150000001875 compounds Chemical class 0.000 description 9
238000009792 diffusion process Methods 0.000 description 9
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
229910052760 oxygen Inorganic materials 0.000 description 7
239000001301 oxygen Substances 0.000 description 7
230000006872 improvement Effects 0.000 description 5
239000000126 substance Substances 0.000 description 5
CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
229910052786 argon Inorganic materials 0.000 description 4
230000015572 biosynthetic process Effects 0.000 description 4
150000002927 oxygen compounds Chemical class 0.000 description 4
239000000843 powder Substances 0.000 description 4
230000008569 process Effects 0.000 description 4
238000004544 sputter deposition Methods 0.000 description 4
238000003860 storage Methods 0.000 description 4
238000007740 vapor deposition Methods 0.000 description 4
239000004020 conductor Substances 0.000 description 3
239000000470 constituent Substances 0.000 description 3
238000002425 crystallisation Methods 0.000 description 3
230000008025 crystallization Effects 0.000 description 3
238000010586 diagram Methods 0.000 description 3
230000000694 effects Effects 0.000 description 3
239000012212 insulator Substances 0.000 description 3
238000000992 sputter etching Methods 0.000 description 3
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
229910052782 aluminium Inorganic materials 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
229910002092 carbon dioxide Inorganic materials 0.000 description 2
239000001569 carbon dioxide Substances 0.000 description 2
230000008020 evaporation Effects 0.000 description 2
238000001704 evaporation Methods 0.000 description 2
229910052751 metal Inorganic materials 0.000 description 2
239000002184 metal Substances 0.000 description 2
239000011148 porous material Substances 0.000 description 2
RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
235000012239 silicon dioxide Nutrition 0.000 description 2
241000473391 Archosargus rhomboidalis Species 0.000 description 1
239000011149 active material Substances 0.000 description 1
239000013543 active substance Substances 0.000 description 1
IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 description 1
230000008901 benefit Effects 0.000 description 1
230000000903 blocking effect Effects 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
150000004770 chalcogenides Chemical class 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
239000012141 concentrate Substances 0.000 description 1
238000010276 construction Methods 0.000 description 1
239000000356 contaminant Substances 0.000 description 1
238000001816 cooling Methods 0.000 description 1
238000006731 degradation reaction Methods 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
238000001035 drying Methods 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000010931 gold Substances 0.000 description 1
229910002804 graphite Inorganic materials 0.000 description 1
239000010439 graphite Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
238000002513 implantation Methods 0.000 description 1
238000009413 insulation Methods 0.000 description 1
238000010849 ion bombardment Methods 0.000 description 1
238000010884 ion-beam technique Methods 0.000 description 1
239000007788 liquid Substances 0.000 description 1
VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
230000005012 migration Effects 0.000 description 1
238000013508 migration Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
239000002245 particle Substances 0.000 description 1
238000012545 processing Methods 0.000 description 1
238000005086 pumping Methods 0.000 description 1
238000000197 pyrolysis Methods 0.000 description 1
230000005855 radiation Effects 0.000 description 1
230000027756 respiratory electron transport chain Effects 0.000 description 1
239000007787 solid Substances 0.000 description 1
238000000859 sublimation Methods 0.000 description 1
230000008022 sublimation Effects 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Electrodes Of Semiconductors (AREA)
Secondary Cells (AREA)

JP11654477A 1976-09-28 1977-09-28 Method of producing amorphous semiconductor device Granted JPS5342573A (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
FR7629105A FR2365888A1 (fr)	1976-09-28	1976-09-28	Procede de realisation de dispositifs semi-conducteurs amorphes et dispositifs en faisant application
FR7712750A FR2389239A2 (fr)	1977-04-27	1977-04-27	Procede de realisation de dispositifs semiconducteurs amorphes et dispositifs en faisant application

Publications (2)

Publication Number	Publication Date
JPS5342573A JPS5342573A (en)	1978-04-18
JPS6123678B2 true JPS6123678B2 (2)	1986-06-06

Family

ID=26219643

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP11654477A Granted JPS5342573A (en)	1976-09-28	1977-09-28	Method of producing amorphous semiconductor device

Country Status (4)

Country	Link
US (1)	US4167806A (2)
JP (1)	JPS5342573A (2)
DE (1)	DE2743641A1 (2)
GB (1)	GB1592304A (2)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5683050A (en) *	1979-12-12	1981-07-07	Toshiba Corp	Semiconductor device
FR2478879A1 (fr) *	1980-03-24	1981-09-25	Commissariat Energie Atomique	Procede de realisation de dispositifs a effet memoire a semi-conducteurs amorphes
JPS5766674A (en) *	1980-10-09	1982-04-22	Toshiba Corp	Semiconductor device
US4433342A (en) *	1981-04-06	1984-02-21	Harris Corporation	Amorphous switching device with residual crystallization retardation
FR2533072B1 (fr) *	1982-09-14	1986-07-18	Coissard Pierre	Procede de fabrication de circuits electroniques a base de transistors en couches minces et de condensateurs
JPS61216360A (ja) *	1985-03-20	1986-09-26	Fuji Electric Co Ltd	密着型イメ−ジセンサ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3346788A (en) *	1965-06-15	1967-10-10	Texas Instruments Inc	Gallium arsenide transistor and methods of making same
US3590479A (en) *	1968-10-28	1971-07-06	Texas Instruments Inc	Method for making ambient atmosphere isolated semiconductor devices
US3893229A (en) *	1973-10-29	1975-07-08	Gen Electric	Mounting for light-emitting diode pellet and method for the fabrication thereof
US4095330A (en) *	1976-08-30	1978-06-20	Raytheon Company	Composite semiconductor integrated circuit and method of manufacture

1977
- 1977-09-22 US US05/835,776 patent/US4167806A/en not_active Expired - Lifetime
- 1977-09-26 GB GB39926/77A patent/GB1592304A/en not_active Expired
- 1977-09-28 DE DE19772743641 patent/DE2743641A1/de not_active Withdrawn
- 1977-09-28 JP JP11654477A patent/JPS5342573A/ja active Granted

Also Published As

Publication number	Publication date
DE2743641A1 (de)	1978-03-30
US4167806A (en)	1979-09-18
JPS5342573A (en)	1978-04-18
GB1592304A (en)	1981-07-01

Publication	Publication Date	Title
US4145699A (en)	1979-03-20	Superconducting junctions utilizing a binary semiconductor barrier
US4471376A (en)	1984-09-11	Amorphous devices and interconnect system and method of fabrication
US4366614A (en)	1983-01-04	Method for constructing devices with a storage action and having amorphous semiconductors
EP0122822B1 (fr)	1988-01-13	Procédé de fabrication d'un dispositif semi-conducteur du type comprenant au moins une couche de silicium déposée sur un substrat isolant
EP0262030B1 (fr)	1991-07-17	Procédé de réalisation d'une prise de contact électrique sur un substrat en HgCdTe de conductivité P et application à la fabrication d'une diode N/P
US3941672A (en)	1976-03-02	Method of manufacturing light sensitive heterodiode
JPS6123678B2 (2)	1986-06-06
US4745449A (en)	1988-05-17	Integrated electronics suitable for optical communications
US5645976A (en)	1997-07-08	Capacitor apparatus and method of manufacture of same
JPS62120049A (ja)	1987-06-01	絶縁状の金属フイルムを用いて電気的接続を行う方法及び装置
US3234442A (en)	1966-02-08	Method for fabricating thin film circuit elements and resulting elements
US3184329A (en)	1965-05-18	Insulation
JPS62123716A (ja)	1987-06-05	半導体装置の製造方法
EP0215436B1 (en)	1993-03-17	Method of growth of thin film layer for use in a composite semiconductor
EP0100251A1 (fr)	1984-02-08	Procédé de réduction de composé en couche sur un substrat, et son application à la fabrication de structure semiconductrice à effet de champ
US3830717A (en)	1974-08-20	Semiconductor camera tube target
JPS6366415B2 (2)	1988-12-20
US3679496A (en)	1972-07-25	Semiconductor devices comprising a heterojunction
US3723278A (en)	1973-03-27	Method of depositing hafnium-tantalum nitride layer by reactive sputtering
JPS6266629A (ja)	1987-03-26	薄膜形成方法
JP2880188B2 (ja)	1999-04-05	受光デバイス
JP3136764B2 (ja)	2001-02-19	カルコパイライト薄膜の製造方法
KR100334404B1 (ko)	2002-05-03	고온 초전도체 소자의 제조 방법
JPH1187508A (ja)	1999-03-30	半導体素子の金属配線形成方法
JPH01192177A (ja)	1989-08-02	受光素子の製造方法