JPS6125679B2 - - Google Patents

Info

Publication number: JPS6125679B2
Authority: JP; Japan
Prior art keywords: crystal; diamond; ion; growth; ions
Prior art date: 1977-06-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP52068350A

Other languages

English (en)

Japanese (ja)

Other versions

JPS544297A (en

Inventor

Suchuaato Neruson Richaado

Adorian Hadoson Jon

Jon Meijii Deiuido

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NAT RES DEV

Original Assignee

NAT RES DEV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-06-08

Filing date

1977-06-08

Publication date

1986-06-17

1977-06-08 Application filed by NAT RES DEV filed Critical NAT RES DEV

1977-06-08 Priority to JP6835077A priority Critical patent/JPS544297A/ja

1979-01-12 Publication of JPS544297A publication Critical patent/JPS544297A/ja

1986-06-17 Publication of JPS6125679B2 publication Critical patent/JPS6125679B2/ja

Status Granted legal-status Critical Current

Links

239000013078 crystal Substances 0.000 claims description 105
239000010432 diamond Substances 0.000 claims description 93
230000012010 growth Effects 0.000 claims description 84
229910003460 diamond Inorganic materials 0.000 claims description 82
150000002500 ions Chemical class 0.000 claims description 70
238000000034 method Methods 0.000 claims description 52
229910052799 carbon Inorganic materials 0.000 claims description 33
-1 carbon ions Chemical class 0.000 claims description 26
239000012535 impurity Substances 0.000 claims description 20
238000010884 ion-beam technique Methods 0.000 claims description 12
238000005087 graphitization Methods 0.000 claims description 6
230000008859 change Effects 0.000 claims description 5
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
229910052796 boron Inorganic materials 0.000 claims description 4
229910052698 phosphorus Inorganic materials 0.000 claims description 3
229910052757 nitrogen Inorganic materials 0.000 claims description 2
239000011574 phosphorus Substances 0.000 claims description 2
238000012360 testing method Methods 0.000 description 19
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 16
239000010410 layer Substances 0.000 description 14
238000005498 polishing Methods 0.000 description 12
238000000605 extraction Methods 0.000 description 9
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
229910052710 silicon Inorganic materials 0.000 description 7
239000010703 silicon Substances 0.000 description 7
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
229910002804 graphite Inorganic materials 0.000 description 6
239000010439 graphite Substances 0.000 description 6
229910004298 SiO 2 Inorganic materials 0.000 description 5
125000004429 atom Chemical group 0.000 description 5
238000009792 diffusion process Methods 0.000 description 5
239000007789 gas Substances 0.000 description 5
239000000463 material Substances 0.000 description 5
238000005259 measurement Methods 0.000 description 5
230000008569 process Effects 0.000 description 5
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
229910003481 amorphous carbon Inorganic materials 0.000 description 4
238000000137 annealing Methods 0.000 description 4
238000002524 electron diffraction data Methods 0.000 description 4
238000002474 experimental method Methods 0.000 description 4
238000010849 ion bombardment Methods 0.000 description 4
238000002955 isolation Methods 0.000 description 4
230000003287 optical effect Effects 0.000 description 4
KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 4
OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 3
238000010438 heat treatment Methods 0.000 description 3
230000007246 mechanism Effects 0.000 description 3
238000012545 processing Methods 0.000 description 3
239000000377 silicon dioxide Substances 0.000 description 3
239000000758 substrate Substances 0.000 description 3
CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
239000007900 aqueous suspension Substances 0.000 description 2
230000005540 biological transmission Effects 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
238000012512 characterization method Methods 0.000 description 2
238000007705 chemical test Methods 0.000 description 2
238000005520 cutting process Methods 0.000 description 2
238000004090 dissolution Methods 0.000 description 2
238000002003 electron diffraction Methods 0.000 description 2
230000003116 impacting effect Effects 0.000 description 2
229910017604 nitric acid Inorganic materials 0.000 description 2
229910052760 oxygen Inorganic materials 0.000 description 2
239000001301 oxygen Substances 0.000 description 2
239000002245 particle Substances 0.000 description 2
230000035515 penetration Effects 0.000 description 2
239000000843 powder Substances 0.000 description 2
229910052709 silver Inorganic materials 0.000 description 2
239000004332 silver Substances 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
239000004575 stone Substances 0.000 description 2
239000002344 surface layer Substances 0.000 description 2
UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
208000032443 Masked facies Diseases 0.000 description 1
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
238000013019 agitation Methods 0.000 description 1
238000005280 amorphization Methods 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
238000003491 array Methods 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
230000008901 benefit Effects 0.000 description 1
229910002091 carbon monoxide Inorganic materials 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
229910052681 coesite Inorganic materials 0.000 description 1
239000000084 colloidal system Substances 0.000 description 1
239000003086 colorant Substances 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
239000000356 contaminant Substances 0.000 description 1
229910052906 cristobalite Inorganic materials 0.000 description 1
238000006731 degradation reaction Methods 0.000 description 1
238000000151 deposition Methods 0.000 description 1
238000010586 diagram Methods 0.000 description 1
239000012153 distilled water Substances 0.000 description 1
239000012530 fluid Substances 0.000 description 1
239000003292 glue Substances 0.000 description 1
239000004519 grease Substances 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
238000002513 implantation Methods 0.000 description 1
238000003780 insertion Methods 0.000 description 1
230000037431 insertion Effects 0.000 description 1
238000005305 interferometry Methods 0.000 description 1
238000005372 isotope separation Methods 0.000 description 1
239000007788 liquid Substances 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
238000000386 microscopy Methods 0.000 description 1
229910052750 molybdenum Inorganic materials 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
238000000879 optical micrograph Methods 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
230000000704 physical effect Effects 0.000 description 1
238000001314 profilometry Methods 0.000 description 1
230000005855 radiation Effects 0.000 description 1
238000002128 reflection high energy electron diffraction Methods 0.000 description 1
238000012552 review Methods 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
239000007787 solid Substances 0.000 description 1
229910001220 stainless steel Inorganic materials 0.000 description 1
239000010935 stainless steel Substances 0.000 description 1
229910052682 stishovite Inorganic materials 0.000 description 1
239000010902 straw Substances 0.000 description 1
238000010998 test method Methods 0.000 description 1
230000007704 transition Effects 0.000 description 1
238000004627 transmission electron microscopy Methods 0.000 description 1
238000000411 transmission spectrum Methods 0.000 description 1
229910052905 tridymite Inorganic materials 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
239000010937 tungsten Substances 0.000 description 1
239000012808 vapor phase Substances 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
230000004580 weight loss Effects 0.000 description 1

Landscapes

Crystals, And After-Treatments Of Crystals (AREA)
Carbon And Carbon Compounds (AREA)

JP6835077A 1977-06-08 1977-06-08 Method of growing diamond crystal Granted JPS544297A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP6835077A JPS544297A (en)	1977-06-08	1977-06-08	Method of growing diamond crystal

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP6835077A JPS544297A (en)	1977-06-08	1977-06-08	Method of growing diamond crystal

Publications (2)

Publication Number	Publication Date
JPS544297A JPS544297A (en)	1979-01-12
JPS6125679B2 true JPS6125679B2 (fr)	1986-06-17

Family

ID=13371282

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP6835077A Granted JPS544297A (en)	1977-06-08	1977-06-08	Method of growing diamond crystal

Country Status (1)

Country	Link
JP (1)	JPS544297A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59143656A (ja) *	1983-02-04	1984-08-17	Noritake Co Ltd	ダイヤモンド耐摩耗層を有した熱ペン及びその製造方法

1977
- 1977-06-08 JP JP6835077A patent/JPS544297A/ja active Granted

Also Published As

Publication number	Publication date
JPS544297A (en)	1979-01-12

Publication	Publication Date	Title
US4191735A (en)	1980-03-04	Growth of synthetic diamonds
US4277293A (en)	1981-07-07	Growth of synthetic diamonds having altered electrical conductivity
US5587210A (en)	1996-12-24	Growing and releasing diamonds
Farnsworth et al.	1958	Application of the Ion Bombardment Cleaning Method to Titanium, Germanium, Silicon, and Nickel as Determined by Low‐Energy Electron Diffraction
US3840451A (en)	1974-10-08	Method of producing an artificial diamond film
EP2048267B1 (fr)	2013-11-20	Processus de fabrication de substrat monocristallin avec angle de déport
DE69926985T2 (de)	2006-07-13	Verfahren zur herstellung von diamanten des n-typs mit niedrigem widerstand
Nelson et al.	1983	Diamond synthesis: Internal growth during c+ ion implantation
Menzel	1963	Studies in the preparation and behaviour of nearly perfect metal surfaces
US5252174A (en)	1993-10-12	Method for manufacturing substrates for depositing diamond thin films
US4319889A (en)	1982-03-16	Ultrasharp diamond edges and points and methods of making same by precision micro-irradiation techniques
US20050181210A1 (en)	2005-08-18	Diamond structure separation
Wang et al.	1985	Implantation of Ni thin films and single crystals with Ag ions
JPS6125679B2 (fr)	1986-06-17
EP0104916A2 (fr)	1984-04-04	Dépôt d'un film sur un substrat par évaporation à l'aide d'un faisceau d'électrons
Corish et al.	1972	The growth and dissolution of silver whiskers
Ullmann	1997	Low energy ion assisted carbon film growth: methods and mechanisms
Murayama	1975	Structures of GaAs and GaP thin films formed by rf ion‐beam epitaxy
Hanabusa	1992	Unique features of laser ablation
Bilek et al.	1996	Filtered cathodic vacuum arc (FCVA) deposition of thin film silicon
SU1134119A3 (ru)	1985-01-07	Способ наращивани алмаза
JP3637926B2 (ja)	2005-04-13	ダイアモンド単結晶膜の製造方法
Heavens et al.	1961	The Preparation of Continuous Single-Crystal Thin Films of Nickel and Nickel-Iron Alloys
Schalansky et al.	1989	The influence of an electric discharge on the growth of Au crystallites on cleaved (100) NaCl substrates
Baumann et al.	1994	Epitaxial Cu contacts on semiconducting diamond