JPS61292402A - Microwave integrated circuit - Google Patents
Microwave integrated circuitInfo
- Publication number
- JPS61292402A JPS61292402A JP60134544A JP13454485A JPS61292402A JP S61292402 A JPS61292402 A JP S61292402A JP 60134544 A JP60134544 A JP 60134544A JP 13454485 A JP13454485 A JP 13454485A JP S61292402 A JPS61292402 A JP S61292402A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- conductor layer
- paste
- resistor
- inexpensive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
Landscapes
- Waveguides (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、マイクロ波帯で用いられる集積回路に関する
・ものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to integrated circuits used in the microwave band.
従来の技術
近年、情報の高度化、情報量の増加に伴い通信周波数の
高域化が進み、西星放送受信などマイクロ波帯での実用
化が始まっている。これらマイクロ波域で用いられる送
・受信機などの回路ユニットは、小形化と低廉化の面で
、厚膜ハイブリッド回路構成によシ一体化したマイクロ
波集積回路(以下MICとよぶ)が主流となりつつある
。BACKGROUND OF THE INVENTION In recent years, with the advancement of information and the increase in the amount of information, communication frequencies have become higher, and practical use has begun in the microwave band, such as in the reception of Saisei Broadcasting. For circuit units such as transmitters and receivers used in the microwave range, microwave integrated circuits (hereinafter referred to as MICs), which are integrated with a thick-film hybrid circuit structure, have become mainstream due to their miniaturization and cost reduction. It's coming.
以下図面を参照しながら、上述した従来のマイクロ波集
積回路について説明する。The conventional microwave integrated circuit described above will be described below with reference to the drawings.
第2図は、トランジスタTR,ストリップラインLj+
L21 L5 *抵抗R1〜R6+容量C9誘電体共
振器DRからなるドレン接地型のマイクロ波発振回路を
示しており、この発振回路を厚膜技術によりMICで形
成した場合構造の断面図を第3図に示す。FIG. 2 shows transistor TR, strip line Lj+
L21 L5 *This shows a drain-grounded microwave oscillation circuit consisting of resistors R1 to R6 + capacitance C9 dielectric resonator DR. Figure 3 shows a cross-sectional view of the structure when this oscillation circuit is formed using MIC using thick film technology. Shown below.
従来の厚膜MICは、アルミナなどのセラミック基板1
oに、銀、銀−白金、金などの貴金属導体からなる導体
ペーストをスクリーン印刷し、空気中の760°C〜9
00 ”Cの温度で焼成し、接地導体層30および配線
導体層31〜36を形成する。次いで、直流バイアス抵
抗(”l + ”2 ) +終端抵抗R3,減衰器抵抗
R4〜R6などの抵抗素子として、酸化ルテニウム R
u02−ガラス系のグレーズ抵抗ペーストを導体層31
,32.33に一部重なるようにスクリーン印刷し、空
気中の750’C〜900°Cの温度で焼成しグレーズ
抵抗膜60゜61を形成し必要に応じて抵抗をトリミン
グする。Conventional thick film MICs are made of ceramic substrates such as alumina1.
A conductor paste consisting of a noble metal conductor such as silver, silver-platinum, or gold is screen printed on
The ground conductor layer 30 and wiring conductor layers 31 to 36 are formed by baking at a temperature of 0.00"C. Next, resistors such as DC bias resistance ("l + "2) + termination resistance R3, attenuator resistance R4 to R6, etc. As an element, ruthenium oxide R
u02-Glass-based glaze resistor paste is applied to the conductor layer 31.
, 32 and 33, and baked at a temperature of 750° C. to 900° C. in air to form a glazed resistive film 60° 61, and trim the resistor as necessary.
このあと、誘電体共振器DRやコンデンサチップC1や
、トランジスタチップTHなどのチップ部品を半田付な
どにより搭載し、ワイヤボンデング用のワイヤ4oなど
によつて結線して完成させる。Thereafter, chip components such as the dielectric resonator DR, capacitor chip C1, and transistor chip TH are mounted by soldering, etc., and wires are connected using wires 4o for wire bonding to complete the structure.
(列えば、「厚膜MIC化SHFテレビ地上放送用受信
コンバータ」昭和54年、テレビジョン学会全国大会、
13−17.上野 ら)
発明が解決しようとする問題点
上述のような従来のMICは、形状が小型で高性能でし
かも生産しやすいものであるが、導体材料、抵抗材料と
してムUなどの貴金属を多量に使うため決して安価であ
るとは言えない。1配線の導体損失を増やさず、また安
価な他の導体材料として銅Cuが考えられるが、銅は酸
化されやすいため、空気中での導体形成ができない。ま
た逆に、窒素中でCuを形成したとしても、抵抗体の酸
化ルテニウムRuO2が還元されやすいため窒素中では
抵抗を形成できない。このように、従来のMICは使用
材料が高価であるため低コスト化は難しく、また安価な
材料に置き換えることも難じいという致命的な欠点を有
していた。(For example, ``Thick film MIC SHF TV terrestrial broadcasting receiving converter,'' 1978, National Conference of the Television Society,
13-17. (Ueno et al.) Problems to be Solved by the Invention Conventional MICs as described above have a small size, high performance, and are easy to produce. It cannot be said that it is cheap because it is used frequently. Copper (Cu) can be considered as another inexpensive conductor material that does not increase the conductor loss of one wiring, but since copper is easily oxidized, it is impossible to form a conductor in air. Conversely, even if Cu is formed in nitrogen, a resistor cannot be formed in nitrogen because the ruthenium oxide RuO2 of the resistor is easily reduced. As described above, conventional MICs have a fatal drawback in that the materials used are expensive, making it difficult to reduce costs and also difficult to replace with cheaper materials.
本発明は上記問題点に鑑み、安価な配線材料と抵抗材料
から構成された安価で高性能なMMCを提供するもので
ある。In view of the above-mentioned problems, the present invention provides an inexpensive and high-performance MMC constructed from inexpensive wiring materials and resistance materials.
問題点を解決するための手段
上記問題点を解決するために本発明のMICは、少なく
とも銅からなる導体層と、珪化物−非還元性ガラス系グ
レーズ抵抗体とで構成されたものである。Means for Solving the Problems In order to solve the above problems, the MIC of the present invention is composed of at least a conductor layer made of copper and a silicide-non-reducible glass glaze resistor.
作用
本発明は上記した構成によって、導体層に安価な卑金属
である銅を用い、また、RuO2に代る安価で還元され
にぐい珪化物と非還元性ガラスからなるグレーズを抵抗
として用いた事によって、従来と同等以上の回路性能を
有した安価なMICが実現できたものである。Operation The present invention has the above-described structure, uses copper, which is an inexpensive base metal, for the conductor layer, and uses a glaze made of an inexpensive and resistant to reduction silicide and non-reducible glass instead of RuO2 as a resistor. This makes it possible to realize an inexpensive MIC with circuit performance equivalent to or better than that of the conventional one.
実施例
以下本発明の一実施例を第1図をもとに説明する。なお
、第1図では、導体層20〜26が銅であり、グレーズ
抵抗膜60.51が珪化物−非還元性ガラス系グレーズ
抵抗体で構成されている点を除き、他の構成部品は第3
図と同じである。また実施列では、従来列と同じ構造(
パターン形状も同じ)での、マイクロ波発振回路につい
て行なった。EXAMPLE An example of the present invention will be described below with reference to FIG. In FIG. 1, the conductor layers 20 to 26 are made of copper, and the glazed resistive films 60 and 51 are composed of a silicide-non-reducible glass glazed resistor, but the other components are as shown in FIG. 3
Same as the figure. In addition, the actual row has the same structure as the conventional row (
The experiment was conducted on a microwave oscillation circuit with the same pattern shape.
セラミック基板1oとして、アルミナ含有量が98%、
厚みがO,El nで、2Off角の薄板上の表面が平
滑なアルミナ基板を用いた。As the ceramic substrate 1o, the alumina content is 98%,
An alumina substrate with a thickness of O, El n and a smooth surface on a 2Off angle thin plate was used.
この基板の片面全面に、銅に少量の添加”物成分を含む
銅ペーストを325メツシユのスクリーンで印刷1.1
25°Cの乾燥機で10分間乾燥し、・接地導体層2o
を得た。A copper paste containing a small amount of additives is printed on the entire surface of one side of this board using a 325 mesh screen.1.1
Dry in a dryer at 25°C for 10 minutes, and remove the ground conductor layer 2o.
I got it.
次に、もう一方の面に、同じ鋼ペーストを印刷・乾燥し
て配線導体層21〜25を得た。これを、炉内の酸素濃
度が109pl!1以下の窒素雰囲気で、ピーク温度が
900″Cで、10分間保持された温度パター/を有す
る雰囲気厚膜ベルト炉に通して焼成した。この時のスh
IJツブ・ラインの電気的特性を調べたところ、導体
厚みが1e〜18μmで導体抵抗(直流)は2mQ10
で、6GHzでの導体損失は約o、osdaであった。Next, the same steel paste was printed and dried on the other side to obtain wiring conductor layers 21 to 25. This means that the oxygen concentration in the furnace is 109 pl! It was fired in a nitrogen atmosphere with a peak temperature of 900''C and a temperature pattern held for 10 minutes through an atmospheric thick film belt furnace.
When we investigated the electrical characteristics of the IJ tube line, we found that the conductor thickness was 1e to 18μm and the conductor resistance (DC) was 2mQ10.
The conductor loss at 6 GHz was about o, osda.
次に、第1表に示す固形成分と、ビークルとをよく混練
した抵抗ペーストを250メツシユで乳厚が20μmの
スクリーンで印刷、乾燥し、銅導体層と同じ条件で焼成
し、グレーズ抵抗膜21゜22とした。このあと各抵抗
R1〜R6を必要な抵抗値にレーザ・トリミングによシ
合わせ、各チップ部品C,,TR、DRを取り付けてM
ICを完成させた。Next, a resistance paste prepared by thoroughly kneading the solid components shown in Table 1 and the vehicle was printed on a 250-mesh screen with a milk thickness of 20 μm, dried, and fired under the same conditions as the copper conductor layer. It was set to ゜22. After this, each resistor R1 to R6 is adjusted to the required resistance value by laser trimming, and each chip component C,, TR, DR is attached to M.
Completed IC.
(以下余白)
この様にして得られた本発明のマイクロ波発振回路の代
表的特性を、従来のMICの発振回路のものとの比較を
第2表に示す。同表から伺えるように本発明のMICが
従来のMICに比べて優れた特性を有しているのは、配
線材料に低抵抗な銅を用いた事と、これに適合する厚膜
抵抗材料を形成した構成によるものである。また、本発
明のMICは、従来のムg、ムU導体に比べ、半田くわ
れなどによる接着の低下や、マイグレーションによる導
体特性の低下も見られないため、従来に比べて、極めて
製造しやすいものとなっている。(Left space below) Table 2 shows a comparison of typical characteristics of the microwave oscillation circuit of the present invention thus obtained with those of a conventional MIC oscillation circuit. As can be seen from the table, the reason why the MIC of the present invention has superior characteristics compared to conventional MICs is that low-resistance copper is used as the wiring material, and a thick film resistive material that is compatible with this is formed. This is due to the configuration. In addition, compared to conventional MUG and MU conductors, the MIC of the present invention does not show any deterioration in adhesion due to solder cracks or deterioration in conductor properties due to migration, so it is extremely easy to manufacture. It has become a thing.
第2表
発明の効果
以上のように本発明は、セラミック基板上に少なくとも
銅からなる導体層と、これに接触する珪化物−非還元性
ガラス系グレーズ抵抗体とよ多構成する事によシ、安価
で製造容易で且つ特性の優れたマイクロ波集積回路を提
供できるものであシ、これは工業上極めて重要なもので
ある。Table 2 Effects of the Invention As described above, the present invention is achieved by configuring a conductor layer made of at least copper on a ceramic substrate and a silicide-non-reducible glass glaze resistor in contact with the conductor layer. It is possible to provide a microwave integrated circuit that is inexpensive, easy to manufacture, and has excellent characteristics, which is extremely important in industry.
第1図は本発明のマイクロ波集積回路の一部の構造を示
す断面図、第2図はマイクロ波発振回路を示す図面、第
3図は従来のマイクロ波集積回路の一部の構造を示す断
面図である。
10・・・・・・セラミック基板、20.30・・・・
・・接地導体層、21〜25.31〜35・・・・・・
配線導体層、40・・・・・・ワイヤ、50,51 .
60.61・・・・・・グレーズ抵抗膜。Fig. 1 is a cross-sectional view showing the structure of a part of the microwave integrated circuit of the present invention, Fig. 2 is a drawing showing a microwave oscillation circuit, and Fig. 3 is a diagram showing the structure of part of the conventional microwave integrated circuit. FIG. 10... Ceramic substrate, 20.30...
...Ground conductor layer, 21-25.31-35...
Wiring conductor layer, 40...Wire, 50, 51.
60.61...Glaze resistance film.
Claims (1)
銅からなる導体層と、前記導体層に電気的に接触する珪
化物−非還元性ガラス系グレーズ抵抗体層とを形成して
なることを特徴とするマイクロ波集積回路。At least on a substrate made of electrically insulating ceramic,
1. A microwave integrated circuit comprising: a conductor layer made of copper; and a silicide-non-reducible glass glaze resistor layer electrically in contact with the conductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60134544A JPS61292402A (en) | 1985-06-20 | 1985-06-20 | Microwave integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60134544A JPS61292402A (en) | 1985-06-20 | 1985-06-20 | Microwave integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61292402A true JPS61292402A (en) | 1986-12-23 |
Family
ID=15130797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60134544A Pending JPS61292402A (en) | 1985-06-20 | 1985-06-20 | Microwave integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61292402A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56153702A (en) * | 1980-04-30 | 1981-11-27 | Matsushita Electric Industrial Co Ltd | Glazed resistor |
-
1985
- 1985-06-20 JP JP60134544A patent/JPS61292402A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56153702A (en) * | 1980-04-30 | 1981-11-27 | Matsushita Electric Industrial Co Ltd | Glazed resistor |
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