JPS612977A - gas injection control valve - Google Patents
gas injection control valveInfo
- Publication number
- JPS612977A JPS612977A JP12427584A JP12427584A JPS612977A JP S612977 A JPS612977 A JP S612977A JP 12427584 A JP12427584 A JP 12427584A JP 12427584 A JP12427584 A JP 12427584A JP S612977 A JPS612977 A JP S612977A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gas injection
- valve
- control valve
- injection control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002347 injection Methods 0.000 title claims description 13
- 239000007924 injection Substances 0.000 title claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 39
- 239000012159 carrier gas Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/02—Column chromatography
- G01N30/04—Preparation or injection of sample to be analysed
- G01N30/16—Injection
- G01N30/20—Injection using a sampling valve
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/02—Column chromatography
- G01N30/60—Construction of the column
- G01N30/6095—Micromachined or nanomachined, e.g. micro- or nanosize
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Electrically Driven Valve-Operating Means (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（発明の利用分野）
本発明は、ポータプル形ガス・り０マドグラフのサンプ
ル・ガス注入用制御弁に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Application of the Invention) The present invention relates to a control valve for sample gas injection of a portapull type gas flow chart.
（従来技術とその問題点）
ガス・クラマドグラフに用いるキャビラリイ・カラムが
毛細管のように微小体積のキャリヤー・ガスにナノ・リ
ットル（１０”’？Ｑ：以下ｒｎｉ＋１と称する。）単
位のサンプル・ガス注入を行うには、混合ガスの一部を
キャビラリイ・カラムに注入する直前に放出する月払が
実用化されている。(Prior art and its problems) The cavillary column used in gas chromatographs injects sample gas in nanoliters (10''?Q: hereinafter referred to as rni+1) into a microvolume of carrier gas like a capillary tube. To achieve this, a monthly payment method has been put into practice in which a portion of the mixed gas is released just before being injected into the cavillary column.
しかるに、調整法が複雑で注入量の御出が間接であるた
めガス注入量が推定１１であり、正確性の確認には熟練
を要するという問題があった。However, since the adjustment method is complicated and the amount of gas to be injected is indirectly determined, the amount of gas to be injected is estimated to be 11, and there is a problem in that it requires skill to confirm accuracy.
（発明の目的）
本発明は、このような問題点を解消するものであって、
キャリヤー・ガスへのサンプル・ガスの微小流量ガス注
入を直接（１つことかできるガス２４人１ｎｌｌＥ弁を
提供することを目的とする。(Object of the invention) The present invention solves these problems,
The purpose is to provide a gas valve that allows microflow gas injection of sample gas directly into the carrier gas.
（発明の概要）
本発明は、ポータプル形ガス・クロマトグラフのサンプ
ル・ガス注入量がｎＱψ位を要づることに関するガス注
入υ＋１１１１弁であって、ガス・り０マドグラフに用
いるキャビラリイ・カラムが毛細管のような微小体積の
キャリヤー・ガスにｎＱ甲位の直接ガス注入を行うもの
であって、ｎＱＩｌ（Ｑの直接ガス注入は、既に実績を
有する半導体プロセスの化学的研磨法を用いてシリコン
・ウニハートにμｍ単位の深さのバルブ座を形成し、こ
のバルブ座のバルブに薄膜、例えば耐熱性有機物フィル
ムに高Ｉｆ父は負圧の空圧切換を行うことにより、ガス
注入のバルブの機能を行わしめることを特徴とする。(Summary of the Invention) The present invention relates to a gas injection υ+1111 valve for a portaple type gas chromatograph which requires a sample gas injection amount of nQψ, in which the capillary column used in the gas chromatograph is a capillary tube. Direct gas injection of nQIl (Q) into a micro volume of carrier gas such as A valve seat with a depth on the order of μm is formed, and a thin film, such as a heat-resistant organic film, is applied to the valve seat on the valve seat to perform the function of a gas injection valve by switching the pneumatic pressure to negative pressure. It is characterized by
（発明の実施例） 本発明の構造及び実施例を図面に軍づいて説明ｌる。(Example of the invention) The structure and embodiments of the present invention will be explained with reference to the drawings.
第１図は、本発明に係るガス注入υ１１１＋弁の構造を
示す分解図であり、第２図は、正面断面図である。FIG. 1 is an exploded view showing the structure of the gas injection υ111+ valve according to the present invention, and FIG. 2 is a front sectional view.
第１図に示すように、本発明に係るガス注入制御弁は、
シリコン・ウェハー（１）に形成されたパル７２（１２
１のバルブへ岸さ約１００μｍの１１１（５）例えば耐
熱性有機物フィルム（デュポン社製フロロカーボンフィ
ルム相当品）の加熱接着部分〈６）を介して接着し、そ
の上に板（１０）の接着面を介して接着して形成される
。As shown in FIG. 1, the gas injection control valve according to the present invention includes:
Pal 72 (12) formed on silicon wafer (1)
111 (5) having a thickness of approximately 100 μm is adhered to the bulb of No. 1 through a heat-adhesive portion (6) of, for example, a heat-resistant organic film (equivalent to a fluorocarbon film made by DuPont), and then the adhesive surface of the plate (10) is attached on top of it. It is formed by adhering it through.
バルブ座（１２）は、半導体プロセスの化学的研磨法を
用いてμｍ１１１位の深さでシリコン・ウェハーに形成
される。そしてバルブ％ｌ （１２）は、サンプル・ガ
ス通路（２）とキキ・す１アー・ガスへの１ノンプル・
ガス１人孔（３）とパル／・シート面（４）とから成る
。The valve seat (12) is formed in a silicon wafer to a depth of about 111 μm using a chemical polishing method in semiconductor processing. And valve %l (12) connects the sample gas passage (2) and the 1 non-pull gas to the sample gas passage (2).
It consists of a gas hole (3) and a pallet/sheet surface (4).
１ｉ１１１１（ｈ）は、シリＩ］ン・つＪバー（１）と
叛（１０）の間に挟まれた状態で加熱接着される。1i1111(h) is heat bonded while being sandwiched between the silicon bar (1) and the lining (10).
板〈１０）は、ガスン１人用空隙四部（８）と浦ＩＩ
（５１のたわみ部分（７）を制御する制御ガス注入口（
９）から成る。Board 〈10〉 is Gasun 1-person space part 4 (8) and Ura II.
(The control gas inlet that controls the deflection part (7) of 51 (
9).
このような構造をｉするガス？１人Ｎ１１ｌｌ弁は、制
御ガスの高圧によって薄膜（５）のたわみ部分（７）が
バルブｍ（１２）のバルブ・シート面（４）に押し付け
られてガス流入をＮ＋ ＋）−Ｕる。例えば、サンプル
・ガスのキＶすＮ７−・ガスへの流入の阻止は、高圧に
よって１Ｈｌ（５＞のたわみ部分（７）がパルプ座（１
２）のバルブ・シート面（４）に押し付けられることに
より行われる。Which gas has such a structure? In the one-person N11ll valve, the flexible portion (7) of the membrane (5) is pressed against the valve seat surface (4) of the valve m (12) by the high pressure of the control gas, thereby restricting the gas inflow. For example, the sample gas can be prevented from flowing into the pulp seat (1 H1) by high pressure.
2) by being pressed against the valve seat surface (4).
他方、１ｉ１１１（５）のたわみ部分（７）にｔｉｌｌ
ｌｌａガス注入口（９）を介して負圧を与えると、たわ
み部分（７）は逆に上りに吸引されるため、たわみ部分
〈７）とバルブ・シート面（４）との間に空隙が生じ、
サンプル・ガスがキャリヤー・ガスに流入することがで
きる。On the other hand, there is a till on the deflection part (7) of 1i111 (5).
When negative pressure is applied through the lla gas inlet (9), the deflected portion (7) is sucked upward, creating a gap between the deflected portion (7) and the valve seat surface (4). arise,
Sample gas can flow into the carrier gas.
本発明は、厚さ約１００μｍの耐熱性のｉ［〈５）によ
ってダイヤフラムと接着剤の両機能を具備ぜしめて、ｎ
９１１１位のガス注入を直接できるガスｔｔ入ｔ＋１ｌ
ｌｌｌ弁であり、制御ガスの高圧及び負圧の都の部間を
ｌｉｌＩｌｗＡすることによって、サンプル・ガス流入
量を任意に変化できることとなった。In the present invention, heat-resistant i[<5] with a thickness of about 100 μm has both the functions of a diaphragm and an adhesive, and n
9111st gas t+1l with tt that can directly inject gas
This is a llll valve, and by controlling the high pressure and negative pressure sections of the control gas, the inflow amount of the sample gas can be changed arbitrarily.
（発明の効梁）
本発明は、以トの構成であるから、キャリヤー・ガスへ
のサンプル・ガスの微小流量ガス注入をｉｌｌにｔｌう
ことがτきるポータプル形ガス・りＤマドグラフのガス
制御弁である。(Effects of the Invention) Since the present invention has the following configuration, the gas control of the portaple type gas meter D-magnet graph can control the minute flow rate gas injection of the sample gas into the carrier gas to τ. It is a valve.
第１図は、本発明の構造を示す分解図であり、第２図は
正面断面図である。
１・・・シリコン・ウェハー
２・・・１Ｊンブル・ガス通路
３・・・サンプル・ガス注入孔FIG. 1 is an exploded view showing the structure of the present invention, and FIG. 2 is a front sectional view. 1...Silicon wafer 2...1J tube gas passage 3...Sample gas injection hole
Claims (1)
圧の圧力により上下にたわみを生ずる薄膜で覆い、かつ
、該薄膜に注入口と空隙を備えた板を覆うとともに、 前記薄膜の周辺と板の周辺とを前記バルブ座に順次密着
したことを特徴とするガス注入制御弁。[Scope of Claims] A valve seat formed on a silicon wafer is covered with a thin film that bends vertically due to high pressure or negative pressure, and the thin film covers a plate provided with an injection port and a gap, and A gas injection control valve characterized in that a periphery of a thin film and a periphery of a plate are successively brought into close contact with the valve seat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12427584A JPS612977A (en) | 1984-06-16 | 1984-06-16 | gas injection control valve |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12427584A JPS612977A (en) | 1984-06-16 | 1984-06-16 | gas injection control valve |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS612977A true JPS612977A (en) | 1986-01-08 |
Family
ID=14881305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12427584A Pending JPS612977A (en) | 1984-06-16 | 1984-06-16 | gas injection control valve |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS612977A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0632850U (en) * | 1992-09-30 | 1994-04-28 | 横河電機株式会社 | Silicon micro valve |
| JPH06185650A (en) * | 1992-07-29 | 1994-07-08 | Protein Technologies Inc | Valve matrix simultaneously synthesizing dna sequence or peptide arrangement |
-
1984
- 1984-06-16 JP JP12427584A patent/JPS612977A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06185650A (en) * | 1992-07-29 | 1994-07-08 | Protein Technologies Inc | Valve matrix simultaneously synthesizing dna sequence or peptide arrangement |
| JPH0632850U (en) * | 1992-09-30 | 1994-04-28 | 横河電機株式会社 | Silicon micro valve |
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