JPS6130077U - Single crystal manufacturing equipment - Google Patents

Single crystal manufacturing equipment

Info

Publication number
JPS6130077U
JPS6130077U JP11421684U JP11421684U JPS6130077U JP S6130077 U JPS6130077 U JP S6130077U JP 11421684 U JP11421684 U JP 11421684U JP 11421684 U JP11421684 U JP 11421684U JP S6130077 U JPS6130077 U JP S6130077U
Authority
JP
Japan
Prior art keywords
single crystal
crystal manufacturing
crucible
manufacturing equipment
manufacturing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11421684U
Other languages
Japanese (ja)
Other versions
JPH0129241Y2 (en
Inventor
透 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP11421684U priority Critical patent/JPS6130077U/en
Publication of JPS6130077U publication Critical patent/JPS6130077U/en
Application granted granted Critical
Publication of JPH0129241Y2 publication Critical patent/JPH0129241Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図aは本考案による単結晶製造装置の要部を示す平
面図、第1図bは本考案による単結晶製造装置の要部を
示す側断面図、第2図aは結晶育成の初期段階における
るつぼと固液界面の位置関係を示子ための図・第2図b
cよ本考案番こよる単結晶製造装置を用いて単結晶を製
造する場合において、第2図aに示す状態における垂直
方向の温度分布を示すための図、第3図aは結晶育成の
後期段階におけるるつぼと固液界面の位置関係を示すた
めの図、第3図bは従来の単結晶製造装置を用いて単結
晶を製造する場合において、第3図aに示す状態におけ
る垂直方向の温度分布を示すための図、第3図Cは本考
案による単結晶製造装置を用いて単結晶を製造する場合
において、第3図aに示す状態における垂直方向の温度
分布を示すための図である。 1・・・耐火性の支持ケース、2・・・るつぼ、3・・
・高周波コイル、4・・・ガス管、5・・・ガス量調整
部、6・・・流量計、7・・・ガスボンベ、8・・・原
料融液、9・・・単結晶。
Figure 1a is a plan view showing the main parts of the single crystal manufacturing apparatus according to the present invention, Figure 1b is a side sectional view showing the main parts of the single crystal manufacturing apparatus according to the invention, and Figure 2a is the initial stage of crystal growth. Diagram to show the positional relationship between the crucible and the solid-liquid interface at different stages: Figure 2b
Figure 3a is a diagram showing the vertical temperature distribution in the state shown in Figure 2a, when a single crystal is manufactured using the single crystal manufacturing apparatus according to the present invention, and Figure 3a is the latter stage of crystal growth. Figure 3b is a diagram showing the positional relationship between the crucible and the solid-liquid interface at different stages, and Figure 3b shows the temperature in the vertical direction in the state shown in Figure 3a when a single crystal is manufactured using a conventional single crystal manufacturing apparatus. FIG. 3C is a diagram showing the temperature distribution in the vertical direction in the state shown in FIG. 3a when a single crystal is manufactured using the single crystal manufacturing apparatus according to the present invention. . 1... Fireproof support case, 2... Crucible, 3...
- High frequency coil, 4... Gas pipe, 5... Gas amount adjustment section, 6... Flow meter, 7... Gas cylinder, 8... Raw material melt, 9... Single crystal.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] るつぼを備え、チョクラルスキー法を用いる単結晶製造
装置において、該るつぼの壁直上に放射一 状に配列さ
れ、前記るつぼ内にガスを吐出するた−めの少なくとも
3本のガス管と、該ガスの吐出量を調節するための調節
機構とを有することを特徴とする単結晶製造装置。
A single crystal manufacturing apparatus using a Czochralski method, which includes a crucible and includes at least three gas pipes arranged in a radial pattern directly above the wall of the crucible and for discharging gas into the crucible; 1. A single crystal manufacturing apparatus, comprising: an adjustment mechanism for adjusting the amount of gas discharged.
JP11421684U 1984-07-28 1984-07-28 Single crystal manufacturing equipment Granted JPS6130077U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11421684U JPS6130077U (en) 1984-07-28 1984-07-28 Single crystal manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11421684U JPS6130077U (en) 1984-07-28 1984-07-28 Single crystal manufacturing equipment

Publications (2)

Publication Number Publication Date
JPS6130077U true JPS6130077U (en) 1986-02-22
JPH0129241Y2 JPH0129241Y2 (en) 1989-09-06

Family

ID=30673243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11421684U Granted JPS6130077U (en) 1984-07-28 1984-07-28 Single crystal manufacturing equipment

Country Status (1)

Country Link
JP (1) JPS6130077U (en)

Also Published As

Publication number Publication date
JPH0129241Y2 (en) 1989-09-06

Similar Documents

Publication Publication Date Title
FR2569355B1 (en) EXHAUST GAS CATALYST AND METHOD FOR THE PRODUCTION THEREOF
JPS6130077U (en) Single crystal manufacturing equipment
JP2559235B2 (en) Quartz crucible for silicon single crystal pulling equipment
JPS6139168U (en) Single crystal manufacturing equipment
JP2535879Y2 (en) Gas injection equipment for metallurgical vessels
JPS59172770U (en) Vertical Bridgeman Crystal Growth Furnace
JPS59103766U (en) Crucible for single crystal pulling furnace
JPS60127361U (en) Raw material introduction equipment
JPS5955396U (en) Crucible induction furnace
JPS5951053U (en) Blow lance pipe for molten metal processing
FR2616778B1 (en) PROCESS FOR THE PRODUCTION OF A REFRACTORY CALCINE MAGNESIS BRICK, BASED ON SINTERED MAGNESIA AND FINELY DIVIDED ZIRCONIUM SILICATE
Belyakov et al. Crystallization of the Binder and the Strength of Sinter
LaRue Weirton Steel Resumes Output on Slab Caster
JPS58102256U (en) Bathtub equipment for ingot production
JPH0456765U (en)
JPS6015460U (en) Low pressure casting equipment
JPS59193870U (en) Single crystal manufacturing crucible
JPH0236875B2 (en) ATATSUCHIMENTORINGURYONOTEISHOSAYA
JPS5994292U (en) Metallurgical furnace hearth structure
JPS57170892A (en) Crucible holder made of graphite for manufacture of silicon single crystal
JPS57175800A (en) Method of producing ggg single crystal
JPS6040449U (en) Blast furnace wall structure
JPS59103767U (en) carbon crucible
JPH0323038A (en) Ingot making method in plural kinds of molds with bottom pouring
JPS61120729U (en)